Datasheet MSA-1104 Datasheet (HP)

Cascadable Silicon Bipolar
MMIC␣ Amplifier

Technical Data

MSA-1104

Features

• High Dynamic Range

Cascadable 50␣ Ω or 75␣ Ω
Gain Block

• 3␣ dB Bandwidth:

50␣ MHz to 1.3␣ GHz

• 17.5 dBm Typical P

1␣ dB

at

plastic package. This MMIC is
designed for high dynamic range
in either 50 or 75␣ Ω systems by
combining low noise figure with
high IP3. Typical applications
include narrow and broadband
linear amplifiers in commercial
and industrial systems.

0.5␣ GHz

• 12␣ dB Typical 50␣ Ω Gain at

0.5␣ GHz

• 3.6␣ dB Typical Noise Figure
at 0.5␣ GHz

• Low Cost Plastic Package

The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli­zation to achieve excellent
performance, uniformity and

Description

The MSA-1104 is a high perfor­mance silicon bipolar Monolithic
Microwave Integrated Circuit

reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.

(MMIC) housed in a low cost

Typical Biasing Configuration

R

bias

04A Plastic Package

MAX

V

> 8 V

CC

RFC (Optional)

C

block

IN OUT

4

3

MSA

1

2

V

= 5.5 V

d

C

block

5965-9556E

6-454

MSA-1104 Absolute Maximum Ratings

Parameter Absolute Maximum

Device Current 80 mA
Power Dissipation

[2,3]

550 mW

RF Input Power +1 dBm
Junction Temperature 150°C
Storage Temperature –65 to 150° C

Notes:

1. Permanent damage may occur if any of these limits are exceeded.

CASE

= 25°C.

> 87° C.

C

2. T

3. Derate at 8.7 mW/°C for T

4. See MEASUREMENTS section “Thermal Resistance” for more information.

[1]

Thermal Resistance

θjc = 115°C/W

[2,4]

:

Electrical Specifications

[1]

, T

A

= 25° C

Symbol Parameters and Test Conditions: Id = 60 mA, ZO = 50 Ω Units Min. Typ. Max.

G

P

Power Gain (|S21|2) f = 0.05 GHz dB 12.7

f = 0.5 GHz dB 10.0 12.0
f = 1.0 GHz dB 10.5

∆G
f

3 dB

Gain Flatness f = 0.1 to 1.0 GHz dB ±1.0

P

3 dB Bandwidth

[2]

GHz 1.3

Input VSWR f = 0.1 to 1.0 GHz 1.5:1

VSWR

Output VSWR f = 0.1 to 1.0 GHz 1.7:1

NF 50 Ω Noise Figure f = 0.5 GHz dB 3.6
P
IP
t
V

1 dB

3

D

d

Output Power at 1 dB Gain Compression f = 0.5 GHz dBm 17.5
Third Order Intercept Point f = 0.5 GHz dBm 30
Group Delay f = 0.5 GHz psec 200
Device Voltage V 4.4 5.5 6.6

dV/dT Device Voltage Temperature Coefficient mV/°C –8.0

Notes:

1. The recommended operating current range for this device is 40 to 70 mA. Typical performance as a function of current
is on the following page.
Referenced from 50 MHz gain (GP).

2.

6-455

MSA-1104 Typical Scattering Parameters (Z

G

p

(dB)

0.1.02 .05 0.5 1.0 2.0 3.0

FREQUENCY (GHz)

Figure 1. Typical Power Gain vs.
Frequency, Id = 60 mA.

4020 60 80

I

d

(mA)

Figure 3. Power Gain vs. Current.

0

2

4

6

8

10

14

12

16

4

6

8

12

10

14

G

p

(dB)

Figure 4. Output Power at 1 dB Gain
Compression, Noise Figure and Power
Gain vs. Case Temperature,
f = 0.5 GHz, I

d

= 60 mA.

3

4

5

11

13

12

16

17

18

–25 +25 +85

P

1 dB

(dBm)NF (dB)

Gp (dB)

TEMPERATURE (°C)

G

P

1.0 GHz,

P

1 dB

NF

20 468

V

d

(V)

Figure 2. Device Current vs. Voltage.

0

20

40

60

100

80

I

d

(mA)

TC = +85°C
T

C

= +25°C

T

C

= –25°C

FREQUENCY (GHz)

Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.

FREQUENCY (GHz)

Figure 6. Noise Figure vs. Frequency.

3.5

3.0

4.0

4.5

5.5

5.0

NF (dB)

0.1 0.2 0.3 0.5 2.01.0 0.1 0.2 0.3 0.5 2.01.0

12

14

16

18

22

20

P

1 dB

(dBm)

Id = 70 mA

Id= 70 mA
I

d

= 60 mA

I

d

= 40 mA

Id = 60 mA

Id = 40 mA

ZO = 50 Ω

Z

O

= 75 Ω

2.0 GHz

0.1 GHz

0.5 GHz

1.0 GHz

Freq.

S

11

S

21

= 50 Ω, TA = 25° C, I

O

S

12

S

= 60 mA)

d

22

GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang k

.0005 .76 –22 19.3 9.19 167 –24.4 .060 54 .77 –22 0.48
.005 .20 –79 13.7 4.83 164 –16.5 .149 12 .21 –83 0.96
.025 .05 –78 12.8 4.35 174 –16.2 .154 2 .06 –101 1.07
.050 .04 –75 12.7 4.31 174 –16.4 .151 2 .05 –136 1.09
.100 .04 –81 12.6 4.29 171 –16.4 .152 2 .05 –137 1.09
.200 .04 –93 12.6 4.24 164 –16.3 .153 3 .07 –135 1.09
.300 .06 –105 12.4 4.18 156 –16.2 .155 4 .10 –136 1.08
.400 .07 –115 12.3 4.11 148 –16.0 .158 5 .12 –139 1.07
.500 .09 –124 12.1 4.01 141 –15.8 .162 6 .15 –144 1.06
.600 .11 –132 11.8 3.91 134 –15.6 .166 7 .17 –150 1.06
.700 .13 –140 11.6 3.80 126 –15.4 .170 7 .19 –156 1.05
.800 .15 –147 11.3 3.68 120 –15.2 .174 7 .22 –161 1.04
.900 .16 –154 11.0 3.56 113 –14.9 .180 7 .24 –168 1.03

1.000 .18 –161 10.7 3.43 106 –14.7 .184 6 .26 –173 1.03

1.500 .28 171 9.1 2.85 77 –13.5 .211 2 .35 163 0.99

2.000 .37 149 7.6 2.39 52 –13.0 .224 –5 .43 140 0.99

2.500 .45 133 6.1 2.02 33 –12.7 .231 –10 .47 125 1.02

3.000 .52 118 4.6 1.69 14 –12.6 .234 –16 .50 112 1.05

A model for this device is available in the DEVICE MODELS section.

Typical Performance, T

(unless otherwise noted)

= 25° C, ZO = 50␣ Ω

A

6-456

04A Plastic Package Dimensions

)

12.39 ± 0.76

(0.488 ± 0.030)

4

GROUND

RF INPUT

0.76 (0.030)

2.54 ± 0.25

(0.100 ± 0.010)

1

4.29

(0.169)

0.51

(0.020)

DIMENSIONS ARE IN MILLIMETERS (INCHES).

1

A

2

3.68

(0.145)

GROUND

0.76 (0.030)
DIA.

RF OUTPUT
& BIAS

3

0.96 (0.038)
NOTES:

(UNLESS OTHERWISE SPECIFIED)

1. DIMENSIONS ARE IN
MILLIMETERS (INCHES)

2. TOLERANCES
mm .XX = ± 0.13
in .XXX = ± 0.005

0.20 ± 0.050

(0.008 ± 0.002

6-457