Page 1
Cascadable Silicon Bipolar
MMIC␣ Amplifier
Technical Data
MSA-0986
Features
• Broadband, Minimum Ripple
Cascadable 50 Ω Gain Block
• 7.2 ± 0.5 dB Typical Gain
Flatness from 0.1 to 3.0 GHz
• 3 dB Bandwidth:
0.1 to 5.5 GHz
• 10.5 dBm Typical P
1dB
at
2.0␣ GHz
• Surface Mount Plastic
Package
• Tape-and-Reel Packaging
Option Available
Note:
1. Refer to PACKAGING section “Tapeand-Reel Packaging for Semiconductor Devices.”
[1]
The MSA-0986 is a high performance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a low cost,
surface mount plastic package.
This MMIC is designed for very
wide bandwidth industrial and
commercial applications that
require flat gain and low VSWR.
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metallization to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
Typical Biasing Configuration
R
bias
86 Plastic PackageDescription
,
MAX
V
>
12
V
CC
RFC (Optional)
C
block
IN OUT
4
3
MSA
1
2
V
= 7.8 V
d
C
block
5965-9552E
6-438
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MSA-0986 Absolute Maximum Ratings
Parameter Absolute Maximum
Device Current 65 mA
Power Dissipation
[2,3]
500 mW
RF Input Power +13 dBm
Junction Temperature 150°C
Storage Temperature –65 to +150°C
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
3. Derate at 7.1 mW/° C for T
4. See MEASUREMENTS section “Thermal Resistance” for more information.
CASE
= 25°C.
> 80° C.
C
[1]
Thermal Resistance
θjc = 140°C/W
[2,4]
:
Electrical Specifications
Symbol Parameters and Test Conditions: Id = 35 mA, Z
G
∆G
f
3 dB
P
P
Power Gain (|S21|2) f = 2.0 GHz dB 6.0 7.2
Gain Flatness f = 0.1 to 3.0 GHz dB ±0.5
3 dB Bandwidth
[2]
[1]
, T
A
= 25° C
= 50 Ω Units Min. Typ. Max.
O
GHz 5.5
Input VSWR f = 1.0 to 3.0 GHz 1.6:1
VSWR
Output VSWR f = 1.0 to 3.0 GHz 1.8:1
NF 50 Ω Noise Figure f = 2.0 GHz dB 6.2
P
IP
t
V
1 dB
3
D
d
Output Power at 1 dB Gain Compression f = 2.0 GHz dBm 10.5
Third Order Intercept Point f = 2.0 GHz dBm 23.0
Group Delay f = 2.0 GHz psec 95
Device Voltage V 6.2 7.8 9.4
dV/dT Device Voltage Temperature Coefficient mV/°C –16.0
Notes:
1. The recommended operating current range for this device is 25 to 45 mA. Typical performance as a function of current
is on the following page.
Referenced from 0.1 GHz gain (GP).
2.
Part Number Ordering Information
Part Number No. of Devices Container
MSA-0986-TR1 1000 7" Reel
MSA-0986-BLK 100 Antistatic Bag
For more information, see “Tape and Reel Packaging for Semiconductor Devices”.
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MSA-0986 Typical Scattering Parameters (Z
G
p
(dB)
0.1.05 0.3 0.5 1.0 3.0 6.0
FREQUENCY (GHz)
Figure 1. Typical Power Gain vs.
Frequency.
0
2
4
6
8
10
12
Figure 3. Output Power at 1 dB Gain
Compression, Noise Figure and Power
Gain vs. Case Temperature,
f = 2.0 GHz, Id = 35 mA.
4
5
6
7
6
8
7
10
11
12
0–25 +25 +55 +85
P
1 dB
(dBm)NF (dB)
Gp (dB)
TEMPERATURE (°C)
G
P
P
1 dB
NF
2046810
V
d
(V)
Figure 2. Device Current vs. Voltage.
0
10
20
30
50
40
I
d
(mA)
TC = +85°C
TC = +25°C
TC = –25°C
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain
Compression vs. Frequency.
FREQUENCY (GHz)
Figure 5. Noise Figure vs. Frequency.
5.5
5.0
6.0
6.5
7.0
NF (dB)
0.1 0.2 0.3 0.5 2.01.0 4.0 0.1 0.2 0.3 0.5 2.0 4.01.0
5
7
9
11
15
13
P
1 dB
(dBm)
Id= 45 mA
Id= 35 mA
Id= 25 mA
Id = 35 mA
Id = 25 mA
Id = 25 mA
Id = 35-45 mA
Id = 45 mA
Freq.
S
11
S
21
= 50 Ω, TA = 25° C, I
O
S
12
S
= 35 mA)
d
22
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang k
0.02 .36 –105 11.4 3.72 145 –14.1 .198 18 .38 –102 0.73
0.05 .24 –145 8.5 2.65 156 –13.7 .205 5 .25 –143 1.08
0.1 .22 –164 7.7 2.43 166 –13.5 .211 4 .22 –158 1.17
0.2 .21 –179 7.5 2.37 167 –13.5 .212 1 .22 –172 1.20
0.4 .21 165 7.4 2.34 162 –13.4 .214 –1 .22 179 1.20
0.6 .22 155 7.4 2.33 156 –13.5 .212 –2 .22 175 1.21
0.8 .22 145 7.3 2.33 149 –13.4 .213 –2 .23 171 1.21
1.0 .23 136 7.3 2.32 142 –13.4 .214 –4 .24 167 1.20
1.5 .24 118 7.2 2.30 125 –13.3 .217 –6 .26 157 1.19
2.0 .25 106 7.2 2.28 109 –13.0 .224 –10 .28 148 1.16
2.5 .26 100 7.2 2.29 94 –13.0 .224 –12 .33 139 1.15
3.0 .26 94 7.1 2.26 77 –13.0 .224 –15 .34 128 1.15
3.5 .26 95 7.0 2.23 60 –12.8 .229 –21 .36 116 1.14
4.0 .28 96 6.7 2.17 43 –13.1 .221 –25 .35 104 1.18
4.5 .31 100 6.5 2.10 26 –13.6 .210 –31 .32 94 1.23
5.0 .37 101 6.0 2.00 9 –14.2 .196 –35 .26 86 1.30
5.5 .44 97 5.4 1.86 –7 –14.9 .181 –38 .19 88 1.38
6.0 .51 94 4.6 1.69 –22 –15.8 .162 –37 .14 107 1.47
A model for this device is available in the DEVICE MODELS section.
Typical Performance, T
= 25° C
A
(unless otherwise noted)
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86 Plastic Package Dimensions
0.51 ± 0.13
(0.020 ± 0.005)
RF INPUT
1.52 ± 0.25
(0.060 ± 0.010)
0.66 ± 0.013
(0.026 ± 0.005)
0.30 MIN
(0.012 MIN)
GROUND
45°
1
GROUND
2.67 ± 0.38
(0.105 ± 0.15)
(0.085 ± 0.005)
DIMENSIONS ARE IN MILLIMETERS (INCHES)
A09
5° TYP.
2.16 ± 0.13
4
RF OUTPUT
AND DC BIAS
3
2.34 ± 0.38
(0.092 ± 0.015)
2
(0.006 ± 0.002)
8° MAX
0° MIN
0.203 ± 0.051
C
L
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