Page 1
Cascadable Silicon Bipolar
MMIC␣ Amplifier
Technical Data
MSA-0886
Features
• Usable Gain to 5.5␣ GHz
• High Gain:
32.5 dB Typical at 0.1␣ GHz
22.5 dB Typical at 1.0␣ GHz
• Low Noise Figure:
3.3␣ dB Typical at 1.0␣ GHz
• Surface Mount Plastic
Package
• Tape-and-Reel Packaging
Option Available
Note:
1. Refer to PACKAGING section “Tapeand-Reel Packaging for Semiconductor Devices.”
[1]
The MSA-0886 is a high performance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a low cost,
surface mount plastic package.
This MMIC is designed for use as a
general purpose 50 Ω gain block
above 0.5␣ GHz and can be used as
a high gain transistor below this
frequency. Typical applications
include narrow and moderate band
IF and RF amplifiers in commercial and industrial applications.
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f
silicon bipolar MMIC process
which uses nitride self-alignment,
Typical Biasing Configuration
R
bias
86 Plastic PackageDescription
ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability.
,
MAX
V
>
10
V
CC
The use of an external bias resistor
for temperature and current
stability also allows bias flexibility.
RFC (Optional)
C
block
IN OUT
4
3
MSA
1
2
V
= 7.8 V
d
C
block
5965-9547E
6-426
Page 2
MSA-0886 Absolute Maximum Ratings
Parameter Absolute Maximum
Device Current 65 mA
Power Dissipation
[2,3]
500 mW
RF Input Power +13 dBm
Junction Temperature 150°C
Storage Temperature –65°C to 150°C
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
CASE
= 25°C.
> 80° C.
C
2. T
3. Derate at 7.1 mW/° C for T
4. See MEASUREMENTS section “Thermal Resistance” for more information.
[1]
Thermal Resistance
θjc = 140°C/W
[2,4]
:
Electrical Specifications
Symbol Parameters and Test Conditions: Id = 36 mA, Z
G
P
Power Gain (|S21|2) f = 0.1 GHz dB 32.5
[1]
, T
A
= 25° C
= 50 Ω Units Min. Typ. Max.
O
f = 1.0 GHz 20.5 22.5
VSWR
Input VSWR f = 0.1 to 3.0 GHz 2.1:1
Output VSWR f = 0.1 to 3.0 GHz 1.9:1
NF 50 Ω Noise Figure f = 1.0 GHz dB 3.3
P
IP
t
V
1 dB
3
D
d
Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 12.5
Third Order Intercept Point f = 1.0 GHz dBm 27.0
Group Delay f = 1.0 GHz psec 140
Device Voltage V 6.2 7.8 9.4
dV/dT Device Voltage Temperature Coefficient mV/°C –17.0
Note:
1. The recommended operating current range for this device is 20 to 40 mA. Typical performance as a function of current
is on the following page.
Part Number Ordering Information
Part Number No. of Devices Container
MSA-0886-TR1 1000 7" Reel
MSA-0886-BLK 100 Antistatic Bag
For more information, see “Tape and Reel Packaging for Semiconductor Devices”.
6-427
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MSA-0886 Typical Scattering Parameters
Freq.
S
11
S
21
[1]
(Z
= 50 Ω, TA = 25° C, I
O
S
12
= 36 mA)
d
S
22
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang k
0.1 .63 –22 32.5 42.12 160 –36.7 .015 54 .62 –24 0.68
0.2 .56 –41 31.3 36.68 143 –33.9 .020 50 .55 –46 0.64
0.4 .43 –69 28.6 26.94 119 –29.1 .035 52 .43 –79 0.69
0.6 .35 –88 26.4 20.89 104 –27.0 .045 49 .34 –103 0.77
0.8 .30 –104 24.2 16.21 93 –25.3 .054 50 .29 –124 0.83
1.0 .27 –116 22.4 13.20 83 –24.2 .062 49 .26 –139 0.87
1.5 .27 –144 19.2 9.15 65 –21.6 .083 46 .23 –172 0.93
2.0 .31 –166 16.7 6.84 49 –19.5 .105 41 .22 163 0.96
2.5 .35 178 14.8 5.50 38 –17.9 .128 36 .21 149 0.96
3.0 .40 162 12.9 4.41 25 –17.4 .135 30 .20 132 1.01
3.5 .45 149 11.4 3.72 13 –16.8 .145 25 .19 124 1.02
4.0 .51 137 9.9 3.14 1 –16.1 .157 19 .18 121 1.01
5.0 .61 116 7.3 2.31 –22 –15.7 .164 10 .17 130 1.00
6.0 .68 100 4.6 1.69 –42 –15.2 .173 4 .23 143 0.95
Note:
1. A model for this device is available in the DEVICE MODELS section.
Typical Performance, T
= 25° C
A
(unless otherwise noted)
35
30
25
20
(dB)
p
G
15
10
5
Gain Flat to DC
0
0.1 0.3 0.5 1.0 3.0 6.0
FREQUENCY (GHz)
Id = 36 mA
Id = 20 mA
Figure 1. Typical Power Gain vs.
Frequency, Id = 36 mA.
16
Id = 40 mA
14
Id = 36 mA
12
(dBm)
10
1 dB
P
8
6
Id = 20 mA
4
0.1 0.2 0.3 0.5 2.01.0 4.0 0.1 0.2 0.3 0.5 2.01.0
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain
Compression vs. Frequency.
40
TC = +85°C
TC = +25°C
TC = –25°C
30
20
(mA)
d
I
10
0
2046810
Figure 2. Device Current vs. Voltage.
4.5
Id = 20 mA
Id = 36 mA
Id = 40 mA
4.0
3.5
NF (dB)
3.0
2.5
FREQUENCY (GHz)
Figure 5. Noise Figure vs. Frequency.
(V)
V
d
23
22
Gp (dB)
21
4
3
NF (dB)
2
–25 +250 +55 +85
TEMPERATURE (°C)
G
P
NF
P
1 dB
13
12
11
Figure 3. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Case Temperature, f = 1.0 GHz,
I
=36mA.
d
(dBm)
1 dB
P
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Page 4
86 Plastic Package Dimensions
0.51 ± 0.13
(0.020 ± 0.005)
RF INPUT
1.52 ± 0.25
(0.060 ± 0.010)
0.66 ± 0.013
(0.026 ± 0.005)
0.30 MIN
(0.012 MIN)
GROUND
45°
1
GROUND
2.67 ± 0.38
(0.105 ± 0.15)
(0.085 ± 0.005)
DIMENSIONS ARE IN MILLIMETERS (INCHES)
A08
5° TYP.
2.16 ± 0.13
4
RF OUTPUT
AND DC BIAS
3
2.34 ± 0.38
(0.092 ± 0.015)
2
0.203 ± 0.051
(0.006 ± 0.002)
8° MAX
0° MIN
C
L
6-429
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