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Cascadable Silicon Bipolar
MMIC␣ Amplifier
Technical Data
MSA-0885
Features
• Usable Gain to 6.0␣ GHz
• High Gain:
32.5 dB Typical at 0.1␣ GHz
22.5 dB Typical at 1.0␣ GHz
• Low Noise Figure:
purpose 50 Ω gain block above
0.5␣ GHz and can be used as a high
gain transistor below this frequency. Typical applications
include narrow and moderate band
IF and RF amplifiers in commercial and industrial applications.
3.3␣ dB Typical at 1.0␣ GHz
• Low Cost Plastic Package
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f
silicon bipolar MMIC process
Description
The MSA-0885 is a high performance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a low cost
plastic package. This MMIC is
designed for use as a general
which uses nitride self-alignment,
ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability.
The use of an external bias resistor
for temperature and current
stability also allows bias flexibility.
Typical Biasing Configuration
R
bias
RFC (Optional)
C
block
IN OUT
4
3
MSA
1
2
V
= 7.8 V
d
C
block
V
CC
85 Plastic Package
,
MAX
>
10
V
5965-9545E
6-422
Page 2
MSA-0885 Absolute Maximum Ratings
Parameter Absolute Maximum
Device Current 65 mA
Power Dissipation
[2,3]
500 mW
RF Input Power +13 dBm
Junction Temperature 150°C
Storage Temperature –65°C to 150°C
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
CASE
= 25°C.
> 85° C.
C
2. T
3. Derate at 7.7 mW/° C for T
4. See MEASUREMENTS section “Thermal Resistance” for more information.
[1]
Thermal Resistance
θjc = 130°C/W
[2,4]
:
Electrical Specifications
Symbol Parameters and Test Conditions: Id = 36 mA, Z
G
P
Power Gain (|S21|2) f = 0.1 GHz dB 32.5
[1]
, T
A
= 25° C
= 50 Ω Units Min. Typ. Max.
O
f = 1.0 GHz 21.0 22.5
VSWR
Input VSWR f = 0.1 to 3.0 GHz 1.9:1
Output VSWR f = 0.1 to 3.0 GHz 1.6:1
NF 50 Ω Noise Figure f = 1.0 GHz dB 3.3
P
IP
t
V
1 dB
3
D
d
Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 12.5
Third Order Intercept Point f = 1.0 GHz dBm 27.0
Group Delay f = 1.0 GHz psec 125
Device Voltage V 6.2 7.8 9.4
dV/dT Device Voltage Temperature Coefficient mV/°C –17.0
Note:
1. The recommended operating current range for this device is 20 to 40 mA. Typical performance as a function of current
is on the following page.
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MSA-0885 Typical Scattering Parameters
G
p
(dB)
0.1 0.3 0.5 1.0 3.0 6.0
FREQUENCY (GHz)
Figure 1. Typical Power Gain vs.
Frequency, Id = 36 mA.
2046810
V
d
(V)
Figure 2. Device Current vs. Voltage.
0
5
10
15
20
25
30
35
0
10
20
30
40
Gain Flat to DC
I
d
(mA)
TC = +85°C
T
C
= +25°C
T
C
= –25°C
Figure 3. Power Gain vs. Current.
Figure 4. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Case Temperature, f = 1.0 GHz,
I
d
=36mA.
FREQUENCY (GHz)
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
FREQUENCY (GHz)
Figure 6. Noise Figure vs. Frequency.
Id (mA)
5
10
15
20
25
30
35
G
p
(dB)
10 30 4020
0.1 GHz
4.0 GHz
2.0 GHz
0.5 GHz
1.0 GHz
3.0
2.5
3.5
4.0
4.5
NF (dB)
0.1 0.2 0.3 0.5 2.01.0 4.0 0.1 0.2 0.3 0.5 2.01.0
4
6
8
10
16
14
12
P
1 dB
(dBm)
Id = 36 mA
Id = 40 mA
Id = 20 mA
2
3
4
11
12
13
21
22
23
–25 +250 +55 +85
P
1 dB
(dBm)
NF (dB)
Gp (dB)
TEMPERATURE (°C)
NF
P
1 dB
G
P
Id = 20 mA
I
d
= 36 mA
I
d
= 40 mA
Freq.
S
11
S
21
[1]
(Z
= 50 Ω, TA = 25° C, I
O
S
12
= 36 mA)
d
S
22
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang k
0.1 .64 –21 32.5 42.29 160 –36.5 .015 40 .61 –24 0.78
0.2 .58 –39 31.3 36.89 144 –32.8 .023 50 .54 –45 0.67
0.4 .44 –65 28.7 27.20 120 –29.4 .034 54 .42 –77 0.69
0.6 .36 –82 26.3 20.57 106 –27.2 .044 53 .33 –98 0.77
0.8 .31 –95 24.3 16.31 96 –25.2 .055 53 .28 –115 0.83
1.0 .27 –105 22.5 13.36 87 –24.2 .061 51 .25 –129 0.87
1.5 .24 –125 19.3 9.24 71 –21.4 .085 50 .18 –153 0.96
2.0 .26 –147 16.7 6.82 56 –19.7 .103 47 .15 –173 0.98
2.5 .29 –159 14.9 5.57 48 –18.4 .120 44 .12 180 1.00
3.0 .34 –175 13.1 4.51 37 –17.7 .130 42 .09 165 1.03
3.5 .38 172 11.6 3.80 25 –16.9 .144 37 .06 172 1.04
4.0 .42 161 10.1 3.21 14 –16.3 .153 33 .04 –139 1.06
5.0 .48 135 7.7 2.43 –7 –15.6 .167 24 .09 –90 1.09
6.0 .60 102 5.5 1.88 –29 –14.9 .179 17 .08 –140 1.06
Note:
1. A model for this device is available in the DEVICE MODELS section.
Typical Performance, T
(unless otherwise noted)
= 25° C
A
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Page 4
85 Plastic Package Dimensions
.020
.51
A08
.085
2.15
5° TYP.
.286 ± .030
7.36 ± .76
4
0.143 ± 0.015
3.63 ± 0.38
3
RF OUTPUT
AND BIAS
Notes:
(unless otherwise specified)
1. Dimensions are
2
2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13
.006 ± .002
.15 ± .05
45°
1
.060 ± .010
1.52 ± .25
.07
0.43
GROUND
RF INPUT
GROUND
in
mm
6-425
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