Datasheet MSA-0836-TR1, MSA-0835, MSA-0836-BLK Datasheet (HP)

Cascadable Silicon Bipolar
MMIC␣ Amplifiers

Technical Data

MSA-0835, -0836

Features

• Usable Gain to 6.0␣ GHz

• High Gain:

32.5 dB Typical at 0.1␣ GHz

23.0 dB Typical at 1.0␣ GHz

0.5␣ GHz and can be used as a high
gain transistor below this fre­quency. Typical applications
include narrow and moderate band
IF and RF amplifiers in commercial
and industrial applications.

• Low Noise Figure:

3.0␣ dB Typical at 1.0␣ GHz

• Cost Effective Ceramic
Microstrip Package

The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-

Description

The MSA-0835 is a high perfor­mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a cost effective,
microstrip package. This MMIC is
designed for use as a general

purpose 50 Ω gain block above

zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.

Available in cut lead version
(package␣ 36) as MSA-0836.

Typical Biasing Configuration

R

bias

35 micro-X Package

,

MAX

Note:

1. Short leaded 36 package available
upon request.

V

>

10

V

CC

[1]

RFC (Optional)

C

block

IN OUT

4

3

MSA

1

2

V

= 7.8 V

d

C

block

5965-9596E

6-414

MSA-0835, -0836 Absolute Maximum Ratings

Parameter Absolute Maximum

Device Current 80 mA
Power Dissipation
RF Input Power +13 dBm

Junction Temperature 200°C

Storage Temperature

Notes:

1. Permanent damage may occur if any of these limits are exceeded.

2. T

3. Derate at 5.7 mW/° C for T

4. Storage above +150° C may tarnish the leads of this package making it

5. The small spot size of this technique results in a higher, though more

= 25°C.

CASE

difficult to solder into a circuit.

accurate determination of θ

MENTS section “Thermal Resistance” for more information.

[2,3]

[4]

750 mW

–65° C to 200°C

> 69° C.

C

than do alternate methods. See MEASURE-

jc

[1]

Thermal Resistance

θjc = 175°C/W

[2,5]

:

Electrical Specifications

Symbol Parameters and Test Conditions: Id = 36 mA, Z

G

P

Power Gain (|S21|2) f = 0.1 GHz dB 32.5

[1]

, T

A

= 25° C

= 50 Ω Units Min. Typ. Max.

O

f = 1.0 GHz 22.0 23.0 25.0
f = 4.0 GHz 10.5

VSWR

Input VSWR f = 1.0 to 3.0 GHz 2.0:1

Output VSWR f = 1.0 to 3.0 GHz 1.5:1

NF 50 Ω Noise Figure f = 1.0 GHz dB 3.0

P

IP

t

V

1 dB

3

D

d

Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 12.5

Third Order Intercept Point f = 1.0 GHz dBm 27.0

Group Delay f = 1.0 GHz psec 125

Device Voltage V 7.0 7.8 8.4

dV/dT Device Voltage Temperature Coefficient mV/°C –17.0

Note:

1. The recommended operating current range for this device is 20 to 40 mA. Typical performance as a function of current
is on the following page.

Part Number Ordering Information

Part Number No. of Devices Container

MSA-0835 10 Strip
MSA-0836-BLK 100 Antistatic Bag
MSA-0836-TR1 1000 7" Reel

For more information, see “Tape and Reel Packaging for Semiconductor Devices”.

6-415

MSA-0835, -0836 Typical Scattering Parameters

Freq.

S

11

S

21

[1]

(Z

= 50 Ω, TA = 25° C, I

O

S

12

S

d

22

= 36 mA)

GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang k

0.1 .63 –17 32.5 42.02 161 –37.7 .013 55 .63 –19 0.72

0.2 .58 –33 31.5 37.52 145 –33.7 .021 47 .56 –37 0.73

0.4 .49 –56 29.1 28.50 119 –29.7 .033 54 .42 –66 0.72

0.6 .40 –70 26.7 21.54 103 –27.9 .040 55 .32 –84 0.78

0.8 .35 –80 24.6 17.01 92 –26.0 .050 53 .24 –98 0.85

1.0 .33 –89 22.9 13.98 82 –24.9 .057 52 .18 –107 0.89

1.5 .30 –111 19.5 9.45 64 –22.1 .079 51 .09 –126 0.95

2.0 .30 –133 16.9 7.03 48 –20.2 .098 44 .07 –141 0.99

2.5 .32 –150 14.9 5.53 39 –19.2 .110 42 .06 –166 1.04

3.0 .34 –170 13.2 4.56 26 –18.3 .122 36 .06 –106 1.06

3.5 .38 175 11.7 3.86 14 –17.5 .133 32 .08 –100 1.08

4.0 .39 162 10.5 3.33 2 –16.7 .146 27 .12 –101 1.08

5.0 .41 132 7.9 2.47 –21 –15.6 .165 19 .21 –113 1.10

6.0 .52 95 5.8 1.94 –45 –14.6 .187 7 .20 –149 1.05

Note:

1. A model for this device is available in the DEVICE MODELS section.

Typical Performance, T

(unless otherwise noted)

35

30

Gain Flat to DC

25

20

(dB)

p

G

15

10

5

0

0.1 0.3 0.5 1.0 3.0 6.0
FREQUENCY (GHz)

Figure 1. Typical Power Gain vs.
Frequency, I

24
23
22

Gp (dB)

21

4
3

NF (dB)

2

–55 –25 +25 +85 +125

Figure 4. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Case Temperature, f = 1.0 GHz,
I

=36mA.

d

= 36 mA.

d

TEMPERATURE (°C)

G

P

P

1 dB

NF

= 25° C

A

13
12

(dBm)

11

1 dB

P

10

35

30

20

(mA)

d

I

10

TC = +125°C
T

= +25°C

C

= –55°C

T

C

0

2046810

V

(V)

d

(dB)

p

G

35

30

25

20

15

10

5

10 30 4020

0.1 GHz

0.5 GHz

1.0 GHz

2.0 GHz

4.0 GHz

Id (mA)

Figure 2. Device Current vs. Voltage. Figure 3. Power Gain vs. Current.

16

Id = 40 mA

14

Id = 36 mA

12

(dBm)

10

1 dB

P

8

6

Id = 20 mA

4

0.1 0.2 0.3 0.5 2.01.0 4.0 0.1 0.2 0.3 0.5 2.01.0
FREQUENCY (GHz)

Figure 5. Output Power at 1 dB Gain

4.5
Id = 20 mA

= 36 mA

I

d

= 40 mA

I

d

4.0

3.5

NF (dB)

3.0

2.5

FREQUENCY (GHz)

Figure 6. Noise Figure vs. Frequency.

Compression vs. Frequency.

6-416

35 micro-X Package Dimensions

4

GROUND

RF OUTPUT
AND BIAS

A08

2

GROUND

Notes:
(unless otherwise specified)

1. Dimensions are

.100

2.54

2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13

.057 ± .010

1.45 ± .25

.085

2.15

RF INPUT

13

.020
.508

.083

2.11

in

mm

DIA.

.022

.56

.455 ± .030

11.54 ± .75
.006 ± .002

.15 ± .05

6-417