Page 1
Cascadable Silicon Bipolar
MMIC␣ Amplifier
Technical Data
MSA-0786
Features
• Cascadable 50 Ω Gain Block
• Low Operating Voltage:
4.0 V Typical V
d
• 3 dB Bandwidth:
DC to 2.0 GHz
• 12.5␣ dB Typical Gain at
1.0␣ GHz
• Unconditionally Stable
(k>1)
• Surface Mount Plastic
Package
• Tape-and-Reel Packaging
Option Available
Note:
1. Refer to PACKAGING section “Tapeand-Reel Packaging for Semiconductor Devices.”
[1]
The MSA-0786 is a high performance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a low cost,
surface mount plastic package.
This MMIC is designed for use as a
general purpose 50 Ω gain block.
Applications include narrow and
broad band IF and RF amplifiers
in commercial and industrial
applications.
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
Typical Biasing Configuration
R
bias
86 Plastic PackageDescription
zation to achieve excellent
performance, uniformity and
,
MAX
V
> 5 V
CC
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
RFC (Optional)
C
block
IN OUT
4
3
MSA
1
2
V
= 4.0 V
d
C
block
5965-9594E
6-406
Page 2
MSA-0786 Absolute Maximum Ratings
Parameter Absolute Maximum
Device Current 60 mA
Power Dissipation
[2,3]
275 mW
RF Input Power +13 dBm
Junction Temperature 150°C
Storage Temperature –65 to 150° C
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
3. Derate at 8.3 mW/° C for T
4. See MEASUREMENTS section “Thermal Resistance” for more information.
CASE
= 25°C.
> 117° C.
C
[1]
Thermal Resistance
θjc = 120°C/W
[2,4]
:
Electrical Specifications
Symbol Parameters and Test Conditions: Id = 22 mA, Z
G
P
Power Gain (|S21|2) f = 0.1 GHz dB 13.5
[1]
, T
A
= 25° C
= 50 Ω Units Min. Typ. Max.
O
f = 1.0 GHz 10.5 12.5
∆G
f
3 dB
VSWR
Gain Flatness f = 0.1 to 1.3 GHz dB ±0.7
P
3 dB Bandwidth GHz 2.0
Input VSWR f = 0.1 to 2.5 GHz 1.7:1
Output VSWR f = 0.1 to 2.5 GHz 1.7:1
NF 50 Ω Noise Figure f = 1.0 GHz dB 5.0
P
IP
t
V
1 dB
3
D
d
Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 2.0
Third Order Intercept Point f = 1.0 GHz dBm 19.0
Group Delay f = 1.0 GHz psec 150
Device Voltage V 3.2 4.0 4.8
dV/dT Device Voltage Temperature Coefficient mV/°C –7.0
Note:
1. The recommended operating current range for this device is 15 to 40 mA. Typical performance as a function of current
is on the following page.
Part Number Ordering Information
Part Number No. of Devices Container
MSA-0786-TR1 1000 7" Reel
MSA-0786-BLK 100 Antistatic Bag
For more information, see “Tape and Reel Packaging for Semiconductor Devices”.
6-407
Page 3
MSA-0786 Typical Scattering Parameters (Z
G
p
(dB)
0.1 0.3 0.5 1.0 3.0 6.0
FREQUENCY (GHz)
Figure 1. Typical Power Gain vs.
Frequency.
102345
V
d
(V)
Figure 2. Device Current vs. Voltage.
0
2
4
6
8
10
12
16
14
0
10
20
30
40
Gain Flat to DC
I
d
(mA)
TC = +85°C
T
C
= +25°C
T
C
= –25°C
0.1 0.2 0.3 0.5 2.01.0 4.0
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain
Compression vs. Frequency.
–3
0
3
6
15
12
9
P
1 dB
(dBm)
Id = 22 mA
Id = 40 mA
Id = 15 mA
I
d
= 22 mA
I
d
= 40 mA
Id = 15 mA
5.0
4.5
5.5
6.0
6.5
NF (dB)
FREQUENCY (GHz)
Figure 5. Noise Figure vs. Frequency.
0.1 0.2 0.3 0.5 2.01.0 4.0
4
5
6
4
5
6
12
13
14
–25 +250 +55 +85
P
1 dB
(dBm)
NF (dB)
Gp (dB)
TEMPERATURE (°C)
Figure 3. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Case Temperature, f = 1.0 GHz,
I
d
=22mA.
NF
P
1 dB
G
P
Id = 15 mA
I
d
= 22 mA
I
d
= 40 mA
Freq.
S
11
S
21
= 50 Ω, TA = 25° C, I
O
S
12
= 22 mA)
d
S
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 .05 175 13.5 4.74 174 –18.7 .116 1 .14 –12
0.2 .05 174 13.4 4.71 169 –18.7 .117 3 .14 –22
0.4 .04 167 13.3 4.64 158 –18.4 .120 4 .15 –44
0.6 .04 175 13.1 4.52 148 –18.3 .122 7 .16 –65
0.8 .05 –156 12.9 4.39 138 –18.0 .126 8 .17 –84
1.0 .06 –134 12.6 4.25 127 –17.5 .134 10 .18 –102
1.5 .08 –142 11.6 3.79 103 –16.6 .148 9 .21 –139
2.0 .15 –159 10.5 3.34 80 –15.7 .164 7 .23 –164
2.5 .25 –176 9.2 2.89 63 –15.1 .176 5 .24 174
3.0 .33 166 7.8 2.45 44 –14.7 .185 1 .24 159
3.5 .41 150 6.5 2.11 27 –14.9 .179 –5 .24 149
4.0 .49 137 5.2 1.82 12 –15.1 .177 –9 .23 145
5.0 .60 116 3.0 1.41 –14 –15.4 .169 –14 .26 145
Note:
1. A model for this device is available in the DEVICE MODELS section.
22
Typical Performance, T
(unless otherwise noted)
= 25° C
A
6-408
Page 4
86 Plastic Package Dimensions
0.51 ± 0.13
(0.020 ± 0.005)
RF INPUT
1.52 ± 0.25
(0.060 ± 0.010)
0.66 ± 0.013
(0.026 ± 0.005)
0.30 MIN
(0.012 MIN)
GROUND
45°
1
GROUND
2.67 ± 0.38
(0.105 ± 0.15)
(0.085 ± 0.005)
DIMENSIONS ARE IN MILLIMETERS (INCHES)
A07
5° TYP.
2.16 ± 0.13
4
RF OUTPUT
AND DC BIAS
3
2.34 ± 0.38
(0.092 ± 0.015)
2
(0.006 ± 0.002)
8° MAX
0° MIN
0.203 ± 0.051
C
L
6-409
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