Datasheet MSA-0785 Datasheet (HP)

Page 1
Cascadable Silicon Bipolar MMIC␣ Amplifier
Technical Data
MSA-0785

Features

• Cascadable 50 Gain Block
• Low Operating Voltage:
4.0 V Typical V
• 3 dB Bandwidth:
DC to 2.0 GHz
plastic package. This MMIC is designed for use as a general
purpose 50 gain block. Typical
applications include narrow and broad band IF and RF amplifiers in commercial and industrial applications.
• 12.5 dB Typical Gain at
1.0␣ GHz
• Unconditionally Stable (k>1)
• Low Cost Plastic Package
The MSA-series is fabricated using HP’s 10 GHz fT, 25␣ GHz f silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metalli­zation to achieve excellent

Description

The MSA-0785 is a high perfor­mance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost
performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.

Typical Biasing Configuration

R
bias

85 Plastic Package

,
MAX
V
> 5 V
CC
RFC (Optional)
C
block
IN OUT
4
3
MSA
1
2
V
= 4.0 V
d
C
block
5965-9593E
6-402
Page 2

MSA-0785 Absolute Maximum Ratings

Parameter Absolute Maximum
Device Current 60 mA Power Dissipation
[2,3]
275 mW
RF Input Power +13 dBm
Junction Temperature 150°C Storage Temperature –65 to 150° C
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
3. Derate at 9.1 mW/° C for T
4. See MEASUREMENTS section “Thermal Resistance” for more information.
CASE
= 25°C.
> 120° C.
C
[1]
Thermal Resistance
θjc = 110°C/W
[2,4]
:

Electrical Specifications

Symbol Parameters and Test Conditions: Id = 22 mA, Z
G
P
Power Gain (|S21|2) f = 0.1 GHz dB 13.5
[1]
, T
A
= 25° C
= 50 Units Min. Typ. Max.
O
f = 1.0 GHz 10.5 12.5
G
P
f
3 dB
VSWR
Gain Flatness f = 0.1 to 1.3 GHz dB ±0.7
3 dB Bandwidth GHz 2.0
Input VSWR f = 0.1 to 2.5 GHz 1.4:1
Output VSWR f = 0.1 to 2.5 GHz 1.5:1
NF 50 Noise Figure f = 1.0 GHz dB 5.0
P
IP
t
V
1 dB
3
D
d
Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 5.5
Third Order Intercept Point f = 1.0 GHz dBm 19.0
Group Delay f = 1.0 GHz psec 140
Device Voltage V 3.2 4.0 4.8
dV/dT Device Voltage Temperature Coefficient mV/°C –7.0
Note:
1. The recommended operating current range for this device is 15 to 40 mA. Typical performance as a function of current is on the following page.
6-403
Page 3
MSA-0785 Typical Scattering Parameters (Z
G
p
(dB)
0.1 0.3 0.5 1.0 3.0 6.0 FREQUENCY (GHz)
Figure 1. Typical Power Gain vs. Frequency, Id = 22 mA.
102345
V
d
(V)
Figure 2. Device Current vs. Voltage. Figure 3. Power Gain vs. Current.
0
2
4
6
8
10
12
14
0
10
20
30
40
Gain Flat to DC
I
d
(mA)
TC = +85°C TC = +25°C TC = –25°C
Id (mA)
G
p
(dB)
4
6
8
10
12
16
14
10 20 30 40
0.1 GHz
0.5 GHz
1.0 GHz
2.0 GHz
4
5
6
12
13
14
–25 0 +25 +55 +85
4
5
6
P
1 dB
(dBm)
NF (dB)
G
p
(dB)
TEMPERATURE (°C)
Figure 4. Output Power at 1 dB Gain Compression, NF and Power Gain vs. Case Temperature, f = 1.0 GHz, Id=22mA.
0.1 0.2 0.3 0.5 2.01.0 4.0 FREQUENCY (GHz)
Figure 5. Output Power at 1 dB Gain Compression vs. Frequency.
–3
0
3
6
9
12
15
P
1 dB
(dBm)
Id = 40 mA
Id = 15 mA
Id = 22 mA
5.0
4.5
5.5
6.0
6.5
NF (dB)
FREQUENCY (GHz)
Figure 6. Noise Figure vs. Frequency.
0.1 0.2 0.3 0.5 2.01.0
G
P
NF
P
1 dB
Id = 15 mA Id = 22 mA Id = 40 mA
Freq.
S
11
S
21
= 50 , TA = 25° C, I
O
S
12
= 22 mA)
d
S
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 .05 166 13.5 4.73 174 –18.4 .120 1 .14 –11
0.2 .05 151 13.4 4.70 169 –18.3 .122 3 .14 –21
0.4 .04 115 13.3 4.63 158 –18.3 .121 6 .14 –40
0.6 .04 65 13.1 4.53 148 –18.0 .125 7 .16 –58
0.8 .05 26 12.9 4.41 138 –17.8 .139 9 .17 –71
1.0 .06 –5 12.6 4.25 127 –17.6 .132 10 .18 –84
1.5 .08 –51 11.6 3.82 104 –16.5 .149 12 .18 –109
2.0 .11 –99 10.5 3.33 82 –15.9 .161 11 .17 –126
2.5 .14 –127 9.3 2.91 68 –15.2 .174 13 .16 –134
3.0 .20 –154 7.9 2.48 52 –14.8 .183 7 .16 –139
3.5 .25 –173 6.7 2.16 37 –14.7 .184 5 .16 –132
4.0 .29 171 5.5 1.88 23 –14.8 .182 1 .18 –130
5.0 .35 139 3.5 1.50 –1 –14.3 .193 –6 .21 –133
6.0 .46 100 1.7 1.22 –26 –14.5 .189 –14 .20 –169
A model for this device is available in the DEVICE MODELS section.
22
Typical Performance, T
(unless otherwise noted)
= 25° C
A
6-404
Page 4

85 Plastic Package Dimensions

.020
.51
A07
.085
2.15
5° TYP.
.286 ± .030
7.36 ± .76
4
0.143 ± 0.015
3.63 ± 0.38
3
RF OUTPUT AND BIAS
Notes: (unless otherwise specified)
1. Dimensions are
2
2. Tolerances in .xxx = ± 0.005 mm .xx = ± 0.13
.006 ± .002
.15 ± .05
45°
1
.060 ± .010
1.52 ± .25
.07
0.43
GROUND
RF INPUT
GROUND
in
mm
6-405
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