Datasheet LZ2513 Datasheet (Sharp)

Page 1
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1

DESCRIPTION

The LZ2513 is a 1/5-type (3.6 mm) solid-state image sensor that consists of PN photo-diodes and CCDs (charge-coupled devices). With approximately 270 000 pixels (542 horizontal x 492 vertical), the sensor provides a stable high-resolution color image.

FEATURES

• Number of effective pixels : 512 (H) x 492 (V)
• Number of optical black pixels – Horizontal : 2 front and 28 rear
• Pixel pitch : 5.8 µm (H) x 4.5 µm (V)
• Mg, G, Cy, and Ye complementary color filters
• Low fixed-pattern noise and lag
• No burn-in and no image distortion
• Blooming suppression structure
• Built-in output amplifier
• Built-in overflow drain voltage circuit and reset gate voltage circuit
• Horizontal shift register clock voltage : 3.6 V (TYP.)
• Variable electronic shutter (1/60 to 1/10 000 s)
• Compatible with NTSC standard
• Package : 14-pin half-pitch WDIP [Plastic] (WDIP014-P-0400A) Row space : 10.16 mm

PIN CONNECTIONS

PRECAUTIONS

• The exit pupil position of lens should be more than 25 mm from the top surface of the CCD.
• Refer to "PRECAUTIONS FOR CCD AREA
SENSORS" for details.
LZ2513
1/5-type Color CCD Area Sensor
with 270 k Pixels
LZ2513
1OD
2Ø
RS
3NC1
4OS
5NC
2
6ØH2
7ØH1
14
13
12
11
10
9
8
GND
Ø
V4
ØV3
ØV2
ØV1
PW
OFD
14-PIN HALF-PITCH WDIP
TOP VIEW
(WDIP014-P-0400A)
Page 2
LZ2513
2

PIN DESCRIPTION

ABSOLUTE MAXIMUM RATINGS

(TA = +25 ˚C)
SYMBOL PIN NAME
OD Output transistor drain OS Output signals ØRS Reset transistor clock Ø
V1, ØV2, ØV3, ØV4 Vertical shift register clock
ØH1, ØH2 Horizontal shift register clock
PW P-well GND Ground NC
1, NC2 No connection
PARAMETER SYMBOL RATING UNIT
Output transistor drain voltage V
OD 0 to +18 V
Reset gate clock voltage V
ØRS Internal output V
Vertical shift register clock voltage V
ØV –11.5 to +17.5 V
Horizontal shift register clock voltage V
ØH –0.3 to +12 V
Voltage difference between P-well and vertical clock VPW-VØV –29 to 0 V
Storage temperature T
STG –40 to +85 ˚C
Ambient operating temperature T
OPR –20 to +70 ˚C
2
NOTE
NOTES :
1. Do not connect to DC voltage directly. When OFD is connected to GND, connect VOD to GND. Overflow drain clock is applied below 27 Vp-p.
2. Do not connect to DC voltage directly. When Ø
RS is connected to GND, connect VOD to GND. Reset gate clock is
applied below 8 Vp-p.
3. When clock width is below 10 µs, and clock duty factor is below 0.1%, voltage difference between vertical clocks will be below 28 V.
Overflow drainOFD
1VInternal outputV
OFDOverflow drain voltage
3V0 to +15VØV-VØVVoltage difference between vertical clocks
Page 3
3
LZ2513

RECOMMENDED OPERATING CONDITIONS

PARAMETER SYMBOL MIN. TYP. MAX. UNIT NOTE
Ambient operating temperature T
OPR 25.0 ˚C
Output transistor drain voltage V
OD 14.55 15.0 15.45 V
1V24.522.5VØOFD
Overflow drain clock
P-well voltage VPW –10.0 VØVL V2
Ground GND 0.0 V
V–8.5–9.0–9.5
V
ØV1L, VØV2L
VØV3L, VØV4L
Vertical shift register clock
LOW level
INTERMEDIATE level
HIGH level
V
ØV1I, VØV2I
VØV3I, VØV4I
VØV1H, VØV3H 14.55
0.0
15.0 15.45VV
LOW levelHorizontal shift
register clock
V
ØH1L, VØH2L –0.05 0.0 0.05 V
HIGH level VØH1H, VØH2H 3.3 3.6 5.5 V
1V5.55.04.5V
ØRSReset gate clock p-p level
Reset gate clock frequency f
ØRS 9.53 MHz
Horizontal shift register clock frequency fØH1, fØH2 9.53 MHz
Vertical shift register clock frequency
f
ØV1, fØV2
fØV3, fØV4
15.73 kHz
p-p level
NOTES :
• Connect NC1 and NC2 to GND directly or through a capacitor larger than 0.047 µF.
1. Use the circuit parameter indicated in "SYSTEM CONFIGURATION EXAMPLE", and do not connect to DC voltage directly.
2. V
PW is set below VØVL that is low level of vertical shift register clock, or is used with the same power supply that is connected
to V
L of V driver IC.
* To apply power, first connect GND and then turn on V
OD. After turning on VOD, turn on PW first and then turn on other powers
and pulses. Do not connect the device to or disconnect it from the plug socket while power is being applied.
Page 4
LZ2513
4

CHARACTERISTICS (Drive method : Field accumulation)

(T
A = +25 ˚C, Operating conditions : The typical values specified in "
RECOMMENDED OPERATING CONDITIONS
".
Color temperature of light source : 3 200 K, IR cut-off filter (CM-500, 1 mmt) is used.)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT NOTE
Standard output voltage V
O 150 mV 2
Photo response non-uniformity PRNU 15 % 3 Saturation output voltage V
SAT 550 700 mV 4
Dark output voltage V
DARK 0.5 3.0 mV 1, 5
Dark signal non-uniformity DSNU 0.5 2.0 mV 1, 6 Sensitivity R 160 220 mV 7 Smear ratio SMR –80 –70 dB 8 Image lag AI 1.0 % 9 Blooming suppression ratio ABL 1 000 10 Output transistor drain current I
OD 4.0 8.0 mA
Output impedance RO 350 $ Vector breakup 7.0 ˚, % 11 Line crawling 3.0 % 12 Luminance flicker 2.0 % 13
NOTES :
• Within the recommended operating conditions of VOD, V
OFD of the internal output satisfies with ABL larger than
1 000 times exposure of the standard exposure conditions, and V
SAT larger than 550 mV.
1. T
A = +60 ˚C
2. The average output voltage under uniform illumination. The standard exposure conditions are defined as when Vo is 150 mV.
3. The image area is divided into 10 x 10 segments under the standard exposure conditions. Each segment's voltage is the average output voltage of all pixels within the segment. PRNU is defined by (Vmax – Vmin)/Vo, where Vmax and Vmin are the maximum and minimum values of each segment's voltage respectively.
4. The image area is divided into 10 x 10 segments. Each segment's voltage is the average output voltage of all pixels within the segment. V
SAT is the minimum
segment's voltage under 10 times exposure of the standard exposure conditions.
5. The average output voltage under non-exposure conditions.
6. The image area is divided into 10 x 10 segments under non-exposure conditions. DSNU is defined by (Vdmax – Vdmin), where Vdmax and Vdmin are the maximum and minimum values of each segment's voltage respectively.
7. The average output voltage when a 1 000 lux light source with a 90% reflector is imaged by a lens of F4, f50 mm.
8. The sensor is exposed only in the central area of V/10 square with a lens at F4, where V is the vertical image size. SMR is defined by the ratio of the output voltage detected during the vertical blanking period to the maximum output voltage in the V/10 square.
9. The sensor is exposed at the exposure level corresponding to the standard conditions. AI is defined by the ratio of the output voltage measured at the 1st field during the non-exposure period to the standard output voltage.
10. The sensor is exposed only in the central area of V/10 square, where V is the vertical image size. ABL is defined by the ratio of the exposure at the standard conditions to the exposure at a point where blooming is observed.
11. Observed with a vector scope when the color bar chart is imaged under the standard exposure conditions.
12. The difference between the average output voltage of the (Mg + Ye), (G + Cy) line and that of the (Mg + Cy), (G + Ye) line under the standard exposure conditions.
13. The difference between the average output voltage of the odd field and that of the even field under the standard exposure conditions.
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LZ2513
5

PIXEL STRUCTURE

,
,
,
,
y
y
y
y
,
,
,
y
y
y
512 (H) x 492 (V)
1 pin
OPTICAL BLACK
(2 PIXELS)
OPTICAL BLACK
(28 PIXELS)

COLOR FILTER ARRAY

MgGMgGMg
Cy Ye Cy Ye Cy
GMgGMgG
Cy Ye Cy Ye Cy
MgGMgGMg
Cy Ye Cy Ye Cy
Mg G Mg G Mg
Ye Cy Ye Cy Ye
G Mg G Mg G
Ye Cy Ye Cy Ye
Mg G Mg G Mg
Ye Cy Ye Cy Ye
G Mg G Mg G
Ye Cy Ye Cy Ye
Mg G Mg G Mg
Ye Cy Ye Cy Ye
G Mg G Mg G
Ye Cy Ye Cy Ye
GMgGMgG
Cy Ye Cy Ye Cy
MgGMgGMg
Cy Ye Cy Ye Cy
GMgGMgG
Cy Ye Cy Ye Cy
(1, 492) (512, 492)
(1, 1) (512, 1)
EVEN field
ODD field
,
y
,
y
,
y
Page 6
LZ2513
6

TIMING CHART

484
+
485
486
+
487
488
+
489
490
+
491
492
11
+
12
9 +
10
7 +
8
5 +
6
3 +
4
1 +
2
OS
Ø
OFD
ØV4
ØV3
ØV2
ØV1
VD
HD
(ODD FIELD)
Shutter speed
1/2 000 s
VERTICAL TRANSFER TIMING
483
+
484
485
+
486
487
+
488
491
+
492
489
+
490
10
+
11
8 +
9
6 +
7
4 +
5
2 +
3
 
1
OS
Ø
OFD
ØV4
ØV3
ØV2
ØV1
VD
HD
(EVEN FIELD)
525 1 10 17 19
263 272 279 282
OS
ØRS
ØH2
ØH1
HD
512 OB (28)
OB (2)
ØOFD
ØV4
ØV3
ØV2
ØV1
HORIZONTAL TRANSFER TIMING
29
606, 1 60
24 54
34 64
62 72
49
39
59
OUTPUT (512) 1
πππππππ
Page 7
LZ2513
7
ØV4
ØV3
ØV2
ØV1
HD
(ODD FIELD)
(EVEN FIELD)
READOUT TIMING
ØV4
ØV3
ØV2
ØV1
HD
1
29
39
24
34 64
54
59 161
180
290 338
242 290
449
606, 1 60
29
39
54
6434
59
4949
60
1
29
39
24
34 64
54
59 161
180
290 338
242 290
606, 1 60
54
64450
59
49
60
Page 8
LZ2513
8

SYSTEM CONFIGURATION EXAMPLE

OD
OS
NC
1
OFD
PW
Ø
RS
ØH2 ØH1
GND Ø
V4
ØV3 ØV2 ØV1NC2
V3B V3A V1B V1A
VMa
VH
V4
V2
VL
VMb
POFD
NC
VH
VOD
V4X
VL (VPW)
V3X
V2X
V1X
VH3AX
VH1AX
+5 V
OFDX
ØH1
ØH2
ØRS
CCD
OUT
0.01 µF
1 M$
VOFDH VH3BX OFDX V
2X
V1X
V3X VDD GND
V
4X
VH3AX
VH1BX
VH1AX
+
+
1234567812
242322212019181713
11
14
10
15
9
16
1234567
141312111098
LR36685 LZ2513
100 $
270 pF
1 M$
0.1 µF
(*1)
(*1)
+
+
(*1) ØRS, OFD :
Use the circuit parameter indicated in
this circuit example, and do not connect
to DC voltage directly.
Page 9
PACKAGES FOR CCD AND CMOS DEVICES
9
¬
(◊ : Lid's size)
10.00
±0.10
0.50
±0.50
0.50
±0.50
10.00
±0.10
0.25
±0.10
9.00
±0.10
(◊)
10.16
5.00
±0.075
5.00
±0.075
CCD
17
814
0.03
0.03
1.39
±0.05
1.96
±0.05
9.00
±0.10
(◊)

Package

Glass Lid
CCD
Rotation error of die : ¬= 1.0˚
MAX.
Center of effective imaging area and center of package
Cross section A-A'
3.50
±0.30
1.27
±0.25
2.55
±0.10
0.30
TYP.
0.46
TYP.
P-1.27
TYP.
5.02
MAX.
3.35
±0.10
A'
A
0.80
±0.05
(◊)
M0.25
+0.5 –0
PACKAGE (Unit : mm)
14 WDIP (WDIP014-P-0400A)
Page 10

PRECAUTIONS FOR CCD AREA SENSORS

1. Package Breakage
In order to prevent the package from being broken, observe the following instructions :
1) The CCD is a precise optical component and the package material is ceramic or plastic. Therefore, ø Take care not to drop the device when
mounting, handling, or transporting.
ø Avoid giving a shock to the package.
Especially when leads are fixed to the socket or the circuit board, small shock could break the package more easily than when the package isn’t fixed.
2) When applying force for mounting the device or any other purposes, fix the leads between a joint and a stand-off, so that no stress will be given to the jointed part of the lead. In addition, when applying force, do it at a point below the stand-off part.
(In the case of ceramic packages)
– The leads of the package are fixed with low
melting point glass, so stress added to a lead could cause a crack in the low melting point glass in the jointed part of the lead.
(In the case of plastic packages)
– The leads of the package are fixed with
package body (plastic), so stress added to a lead could cause a crack in the package body (plastic) in the jointed part of the lead.
3) When mounting the package on the housing, be sure that the package is not bent.
– If a bent package is forced into place
between a hard plate or the like, the pack­age may be broken.
4) If any damage or breakage occurs on the sur­face of the glass cap, its characteristics could deteriorate.
Therefore,
ø Do not hit the glass cap. ø Do not give a shock large enough to cause
distortion.
ø Do not scrub or scratch the glass surface.
– Even a soft cloth or applicator, if dry, could
cause dust to scratch the glass.
2. Electrostatic Damage
As compared with general MOS-LSI, CCD has lower ESD. Therefore, take the following anti-static measures when handling the CCD :
1) Always discharge static electricity by grounding the human body and the instrument to be used. To ground the human body, provide resistance of about 1 M$ between the human body and the ground to be on the safe side.
2) When directly handling the device with the fingers, hold the part without leads and do not touch any lead.
Glass cap
Package Lead
Fixed
Stand-off
Fixed
Lead
Stand-off
Low melting point glass
10
PRECAUTIONS FOR CCD AREA SENSORS
Page 11
3) To avoid generating static electricity, a. do not scrub the glass surface with cloth or
plastic.
b. do not attach any tape or labels.
c. do not clean the glass surface with dust-
cleaning tape.
4) When storing or transporting the device, put it in a container of conductive material.
3. Dust and Contamination
Dust or contamination on the glass surface could deteriorate the output characteristics or cause a scar. In order to minimize dust or contamination on the glass surface, take the following precautions :
1) Handle the CCD in a clean environment such as a cleaned booth. (The cleanliness level should be, if possible, class 1 000 at least.)
2) Do not touch the glass surface with the fingers. If dust or contamination gets on the glass surface, the following cleaning method is recommended : ø Dust from static electricity should be blown
off with an ionized air blower. For anti­electrostatic measures, however, ground all the leads on the device before blowing off the dust.
ø The contamination on the glass surface
should be wiped off with a clean applicator soaked in Isopropyl alcohol. Wipe slowly and gently in one direction only.
– Frequently replace the applicator and do not
use the same applicator to clean more than one device.
◊ Note : In most cases, dust and contamination
are unavoidable, even before the device is first used. It is, therefore, recommended that the above procedures should be taken to wipe out dust and contamination before using the device.
4. Other
1) Soldering should be manually performed within 5 seconds at 350 °C maximum at soldering iron.
2) Avoid using or storing the CCD at high tem­perature or high humidity as it is a precise optical component. Do not give a mechanical shock to the CCD.
3) Do not expose the device to strong light. For the color device, long exposure to strong light will fade the color of the color filters.
11
PRECAUTIONS FOR CCD AREA SENSORS
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