Datasheet LZ2354BJ, LZ2353B Datasheet (Sharp)

In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in
catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.

1

DESCRIPTION

The LZ2353B/LZ2354BJ are 1/3-type (6.0 mm)
solid-state image sensors that consist of PN photo­diodes and CCDs (charge-coupled devices). With
approximately 410 000 pixels (811 horizontal x 507
vertical), the sensor provides a stable high-resolution
color (LZ2353B)/B/W (LZ2354BJ) image.

FEATURES

• Number of effective pixels : 768 (H) x 494 (V)

• Number of optical black pixels
– Horizontal : 3 front and 40 rear
– Vertical : 11 front and 2 rear

• Pixel pitch : 6.4 µm (H) x 7.5 µm (V)

• Mg, G, Cy, and Ye complementary color filters
(For LZ2353B)

• Low fixed-pattern noise and lag

• No burn-in and no image distortion

• Blooming suppression structure

• Built-in output amplifier

• Variable electronic shutter (1/60 to 1/10 000 s)

• Compatible with NTSC standard (LZ2353B)/
EIA standard (LZ2354BJ)

• Package :
16-pin half-pitch WDIP [Ceramic]
(WDIP016-N-0450)
Row space : 11.43 mm

COMPARISON TABLE

PIN CONNECTIONS

PRECAUTIONS

• The exit pupil position of lens should be more
than 25 mm (LZ2353B)/20 mm (LZ2354BJ) from
the top surface of the CCD.

• Refer to "PRECAUTIONS FOR CCD AREA

SENSORS" for details.

LZ2353B/LZ2354BJ

LZ2353B/
LZ2354BJ

1/3-type CCD Area Sensors

with 410 k Pixels

1ØV4

2ØV3

3ØV2

4ØV1

5GND

6NC

1

7NC2

8

16

15

14

13

12

11

10

9OS

Ø

H2

ØH1

ØLH1

ØRS

PW

OFD

GND

OD

16-PIN HALF-PITCH WDIP

TOP VIEW

(WDIP016-N-0450)

Characteristics

TV standard

LZ2354BJ

EIA standard (B/W)

LZ2353B

NTSC standard (Color)

Refer to each following specification.

LZ2353B/LZ2354BJ

2

PIN DESCRIPTION

ABSOLUTE MAXIMUM RATINGS

(TA = +25 ˚C)

SYMBOL PIN NAME

OD Output transistor drain
OS Output signals
ØRS Reset transistor clock
Ø

V1, ØV2, ØV3, ØV4 Vertical shift register clock

ØH1, ØH2 Horizontal shift register clock
Ø

LH1 Horizontal shift register final stage clock

PW P-well
GND Ground
NC

1, NC2 No connection

PARAMETER SYMBOL RATING UNIT

Output transistor drain voltage V

OD 0 to +18 V

Reset gate clock voltage
Vertical shift register clock voltage
Horizontal shift register clock voltage
Horizontal shift register final stage clock voltage
Voltage difference between P-well and vertical clock V

PW-VØV –28 to 0 V

Storage temperature T

STG –40 to +85 ˚C

Ambient operating temperature TOPR –20 to +70 ˚C

1

NOTE

NOTE :

1. The OFD clock ØOFD is excluded.

Overflow drainOFD

Overflow drain voltage

V

ØV VPW to +18 V

V

ØH –0.3 to +18 V

V

ØLH –0.3 to +18 V

V

OFD 0 to +55 V

V–0.3 to +18V

ØRS

3

LZ2353B/LZ2354BJ

RECOMMENDED OPERATING CONDITIONS

PARAMETER SYMBOL MIN. TYP. MAX. UNIT NOTE

Ambient operating temperature T

OPR 25.0 ˚C

Output transistor drain voltage V

OD 14.5 15.0 16.0 V

Overflow drain
voltage

When DC is applied VOFD 5.0 19.0 V 1
When pulse is applied p-p level

VØOFD 21.5 V 2
Ground GND 0.0 V
P-well voltage V

PW –10.0 VØVL V

Vertical shift
register clock

LOW level

VØV1L, VØV2L
VØV3L, VØV4L

–9.5 –9.0 –7.5 V

INTERMEDIATE level

V

ØV1I, VØV2I

VØV3I, VØV4I

0.0 V

HIGH level V

ØV1H, VØV3H 14.5 15.0 17.0 V

Horizontal shift
register clock

LOW level VØH1L, VØH2L –0.05 0.0 0.05 V

Reset gate clock

LOW level V

ØRSL 0.0

V

OD

– 14.0

V

HIGH level V

ØRSH

VOD – 9.5

10.0 V

Vertical shift register clock frequency

f

ØV1, fØV2

fØV3, fØV4

15.73 kHz

Horizontal shift register clock frequency f

ØH1, fØH2, fØLH1 14.32 MHz

Reset gate clock frequency fØRS 14.32 MHz

NOTES :

• Connect NC1 and NC2 to GND directly or through a capacitor larger than 0.047 µF.

1. When DC voltage is applied, shutter speed is 1/60-second.

2. When pulse is applied, shutter speed is less than 1/60-second.

* To apply power, first connect GND and then turn on V

OFD. After turning on VOFD, turn on PW first and then turn on other

powers and pulses. Do not connect the device to or disconnect it from the plug socket while power is being applied.

HIGH level VØH1H, VØH2H 4.7 5.0 6.0 V

V6.05.04.7V

ØLH1HHIGH level

V0.050.0–0.05V

ØLH1LLOW level

Horizontal shift
register final
stage clock

4

LZ2353B/LZ2354BJ

CHARACTERISTICS FOR LZ2353B (Drive method : Field accumulation)

(T

A = +25 ˚C, Operating conditions : The typical values specified in "

RECOMMENDED OPERATING CONDITIONS

".

Color temperature of light source : 3 200 K, IR cut-off filter (CM-500, 1 mmt) is used.)

PARAMETER SYMBOL MIN. TYP. MAX. UNIT NOTE

Standard output voltage V

O 150 mV 2

Photo response non-uniformity PRNU 10 % 3
Saturation output voltage V

SAT 700 mV 4

Dark output voltage V

DARK 0.5 3.0 mV 1, 5

Dark signal non-uniformity DSNU 0.5 2.0 mV 1, 6
Sensitivity R 260 350 mV 7
Smear ratio SMR –84 –76 dB 8
Image lag AI 1.0 % 9
Blooming suppression ratio ABL 1 000 10
Output transistor drain current I

OD 4.0 8.0 mA

Output impedance R

O 350 $

Vector breakup 5.0 ˚, % 13
Line crawling 1.5 % 14
Luminance flicker 2.0 % 15

NOTES :

•VOFD should be adjusted to the minimum voltage such
that ABL satisfy the specification, or to the value
displayed on the device.

1. T

A = +60 ˚C

2. The average output voltage under uniform illumination.
The standard exposure conditions are defined as when
Vo is 150 mV.

3. The image area is divided into 10 x 10 segments under
the standard exposure conditions. Each segment's
voltage is the average output voltage of all pixels within
the segment. PRNU is defined by (Vmax – Vmin)/Vo,
where Vmax and Vmin are the maximum and minimum
values of each segment's voltage respectively.

4. The image area is divided into 10 x 10 segments. Each
segment's voltage is the average output voltage of all
pixels within the segment. V

SAT is the minimum

segment's voltage under 10 times exposure of the
standard exposure conditions.

5. The average output voltage under non-exposure
conditions.

6. The image area is divided into 10 x 10 segments under
non-exposure conditions. DSNU is defined by (Vdmax –
Vdmin), where Vdmax and Vdmin are the maximum and
minimum values of each segment's voltage respectively.

7. The average output voltage when a 1 000 lux light
source with a 90% reflector is imaged by a lens of F4,
f50 mm.

8. The sensor is exposed only in the central area of V/10
square with a lens at F4, where V is the vertical image
size. SMR is defined by the ratio of the output voltage
detected during the vertical blanking period to the
maximum output voltage in the V/10 square.

9. The sensor is exposed at the exposure level
corresponding to the standard conditions. AI is defined
by the ratio of the output voltage measured at the 1st
field during the non-exposure period to the standard
output voltage.

10. The sensor is exposed only in the central area of V/10
square, where V is the vertical image size. ABL is
defined by the ratio of the exposure at the standard
conditions to the exposure at a point where blooming is
observed.

11. The RMS value of the dark noise (after CDS). (100 kHz
to 4.2 MHz, SC trap on.)

12. The difference of the average output voltage between
the effective area and the OB area under non-exposure
conditions.

13. Observed with a vector scope when the color bar chart
is imaged under the standard exposure conditions.

14. The difference between the average output voltage of the
(Mg + Ye), (G + Cy) line and that of the (Mg + Cy), (G +
Ye) line under the standard exposure conditions.

15. The difference between the average output voltage of
the odd field and that of the even field under the
standard exposure conditions.

1, 12mV1.0OB difference in level

11mV0.30.2V

NOISEDark noise

LZ2353B/LZ2354BJ

5

CHARACTERISTICS FOR LZ2354BJ (Drive method : Field accumulation)

(T

A = +25 ˚C, Operating conditions : The typical values specified in "

RECOMMENDED OPERATING CONDITIONS

".

Color temperature of light source : 3 200 K, IR cut-off filter (CM-500, 1 mmt) is used.)

PARAMETER SYMBOL MIN. TYP. MAX. UNIT NOTE

Standard output voltage V

O 150 mV 2

Photo response non-uniformity PRNU 10 % 3
Saturation output voltage V

SAT 700 mV 4

Dark output voltage V

DARK 0.5 3.0 mV 1, 5

Dark signal non-uniformity DSNU 0.5 2.0 mV 1, 6
Sensitivity R 410 550 mV 7

Smear ratio SMR –84 –76 dB 8
Image lag AI 1.0 % 9
Blooming suppression ratio ABL 1 000 10
Output transistor drain current I

OD 4.0 8.0 mA

Output impedance R

O 350 $

NOTES :

•VOFD should be adjusted to the minimum voltage such
that ABL satisfy the specification, or to the value
displayed on the device.

1. T

A = +60 ˚C

2. The average output voltage under uniform illumination.
The standard exposure conditions are defined as when
Vo is 150 mV.

3. The image area is divided into 10 x 10 segments under
the standard exposure conditions. Each segment's
voltage is the average output voltage of all pixels within
the segment. PRNU is defined by (Vmax – Vmin)/Vo,
where Vmax and Vmin are the maximum and minimum
values of each segment's voltage respectively.

4. The image area is divided into 10 x 10 segments. Each
segment's voltage is the average output voltage of all
pixels within the segment. V

SAT is the minimum

segment's voltage under 10 times exposure of the
standard exposure conditions.

5. The average output voltage under non-exposure
conditions.

6. The image area is divided into 10 x 10 segments under
non-exposure conditions. DSNU is defined by (Vdmax –
Vdmin), where Vdmax and Vdmin are the maximum and
minimum values of each segment's voltage respectively.

7. The average output voltage when a 1 000 lux light
source with a 90% reflector is imaged by a lens of F4,
f50 mm.

8. The sensor is exposed only in the central area of V/10
square with a lens at F4, where V is the vertical image
size. SMR is defined by the ratio of the output voltage
detected during the vertical blanking period to the
maximum output voltage in the V/10 square.

9. The sensor is exposed at the exposure level
corresponding to the standard conditions. AI is defined
by the ratio of the output voltage measured at the 1st
field during the non-exposure period to the standard
output voltage.

10. The sensor is exposed only in the central area of V/10
square, where V is the vertical image size. ABL is
defined by the ratio of the exposure at the standard
conditions to the exposure at a point where blooming is
observed.

11. The RMS value of the dark noise after CDS. (100 kHz to

4.2 MHz, SC trap on.)

12. The difference between the average output voltage of
the effective area and that of the OB area under non­exposure conditions.

1‹Gamma

1, 12mV1.0OB difference in level

11mV0.30.2V

NOISEDark noise

LZ2353B/LZ2354BJ

6

PIXEL STRUCTURE

,

,

,

,

,

y

y

y

y

y

,

,

,

,

,

y

y

y

y

y

768 (H) x 494 (V)

OPTICAL BLACK

(2 PIXELS)

OPTICAL BLACK

(11 PIXELS)

1 pin

OPTICAL BLACK

(3 PIXELS)

OPTICAL BLACK

(40 PIXELS)

COLOR FILTER ARRAY (FOR LZ2353B)

Cy Ye Cy Ye Cy

MgGMgGMg

Cy Ye Cy Ye Cy

GMgGMgG

Cy Ye Cy Ye Cy

MgGMgGMg

Ye Cy Ye Cy Ye

G Mg G Mg G

Ye Cy Ye Cy Ye

Mg G Mg G Mg

Ye Cy Ye Cy Ye

G Mg G Mg G

Ye Cy Ye Cy Ye

G Mg G Mg G

Ye Cy Ye Cy Ye

Mg G Mg G Mg

Ye Cy Ye Cy Ye

G Mg G Mg G

Cy Ye Cy Ye Cy

MgGMgGMg

Cy Ye Cy Ye Cy

GMgGMgG

Cy Ye Cy Ye Cy

MgGMgGMg

(1, 494) (768, 494)

(1, 1) (768, 1)

EVEN
field

ODD
field

,,,,,,,

yyyyyyy

,,,,,,,

yyyyyyy

,,,,,,,

yyyyyyy

,,,,,,,

yyyyyyy

,,,,,,,

yyyyyyy

,,,,,,,

yyyyyyy

,,,,,,,

yyyyyyy

,,,,,,,

yyyyyyy

,,,,,,,

yyyyyyy

,,,,,,,

yyyyyyy

LZ2353B/LZ2354BJ

7

TIMING CHART

489

+

490

491

+

492

493

+

494

OB1

+

OB2

OB1

+

OB2

OB3

+

OB4

OB5

+

OB6

OB7

+

OB8

OB9

+

OB10

OB11

+
1

2
+

3

4

+

5

6
+

7

8
+

9

10

+

11

12

+

13

14

+

15

16

+

17

OS

Ø

OFD

ØV4

ØV3

ØV2

ØV1

VD

HD

(ODD FIELD)

Shutter speed

1/2 000 s

VERTICAL TRANSFER TIMING

488

+

489

490

+

491

492

+

493

494

+

OB1

OB2 7

+
8

5
+

6

3
+

4

1

+

2

OB10

+

OB11

OB8

+

OB9

OB6

+

OB7

OB4

+

OB5

OB2

+

OB3




OB1

9
+

10

11

+

12

13

+

14

15

+

16

OS

Ø

OFD

ØV4

ØV3

ØV2

ØV1

VD

HD

(EVEN FIELD)

525 1 10

263 272

OS

Ø

RS

ØH2

ØH1

ØLH1

HD

π768 OB (40)

OUTPUT (768) 1

πππ

ØOFD

ØV4

ØV3

ØV2

ØV1

910, 1 91

HORIZONTAL TRANSFER TIMING

42 74

58 90

34 82

50 98

66 86

OB (3)

PRE SCAN (22)

LZ2353B/LZ2354BJ

8

ØV4

ØV3

ØV2

ØV1

HD

(ODD FIELD)

(EVEN FIELD)

READOUT TIMING

ØV4

ØV3

ØV2

ØV1

HD

1

42

58

34

50 98

82

90 208

240

404 472

336 404

644

910, 1 91

42

58

82

9850

90

7474

91

1

42

58

34

50 98

82

90 208

240

404 472

336 404

910, 1 91

82

98644

90

74

91

LZ2353B/LZ2354BJ

9

SYSTEM CONFIGURATION EXAMPLE

OD

PW

OFD

Ø

V3

ØV2

GND

Ø

H1

ØH2

OS
NC

2

NC1
GND
Ø

V1

ØLH1

ØRS

ØV4

V3B
V3A
V1B
V1A
VMa

VH

V4

V2

VL

VMb

POFD

NC

VH

VL (VPW)

V4X

VOD

V3X

V2X

V1X

VH3AX

VH1AX

+5 V

OFDX

ØH2

ØH1

ØLH1

ØRS

CCD

OUT

100 k$

100 $

1 M$

0.1 µF

270 pF

1 000 pF

+

+

+

V

OFDH

VH3BX
OFDX
V

2X

V1X

V3X
VDD
GND

V

4X

VH3AX

VH1BX

VH1AX

+

+

+

1234567812

242322212019181713

11

14

10

15

9

16

910111213141516

87654321

LR36685

LZ2353B

or



LZ2354BJ

PACKAGES FOR CCD AND CMOS DEVICES

10

0.04

1.46

±0.10

Package (Cerdip)

Glass Lid

CCD

Cross Section A-A'

1.25

±0.20

0.60

±0.05

(◊

2

)

11.43

±0.25

0.25

±0.05



(◊2 : Lid's size)

(◊1 : Reference area)

9.2 2.5

0.85

±0.45

0.5 2.5

2.58.4

0.45

±0.45

¬

CCD

1

8

916

12.20

±0.15

10.50

±0.10

(◊2)

0.50R

5.70

±0.15

4-0.20R

MAX.

6.10

±0.15

10.50

±0.10

(◊

2

)

11.40

±0.15

Center of effective imaging area
and center of package

(◊

1

)

(◊

1

)

(◊

1

)

Rotation error of die : ¬ = 1.5˚

MAX.

3.50

±0.30

1.27

±0.25

1.3

3.37

±0.25

2.75

±0.20

5.29

MAX.

2.23

±0.20

0.46

TYP.

A'

A

0.30

TYP.

P-1.27

TYP.

M0.25



16 WDIP (WDIP016-N-0450)

PACKAGE (Unit : mm)

PRECAUTIONS FOR CCD AREA SENSORS

1. Package Breakage

In order to prevent the package from being broken,
observe the following instructions :

1) The CCD is a precise optical component and
the package material is ceramic or plastic.
Therefore,
ø Take care not to drop the device when

mounting, handling, or transporting.

ø Avoid giving a shock to the package.

Especially when leads are fixed to the socket
or the circuit board, small shock could break
the package more easily than when the
package isn’t fixed.

2) When applying force for mounting the device or
any other purposes, fix the leads between a
joint and a stand-off, so that no stress will be
given to the jointed part of the lead. In addition,
when applying force, do it at a point below the
stand-off part.

(In the case of ceramic packages)

– The leads of the package are fixed with low

melting point glass, so stress added to a
lead could cause a crack in the low melting
point glass in the jointed part of the lead.

(In the case of plastic packages)

– The leads of the package are fixed with

package body (plastic), so stress added to a
lead could cause a crack in the package
body (plastic) in the jointed part of the lead.

3) When mounting the package on the housing,
be sure that the package is not bent.

– If a bent package is forced into place

between a hard plate or the like, the pack­age may be broken.

4) If any damage or breakage occurs on the sur­face of the glass cap, its characteristics could
deteriorate.

Therefore,

ø Do not hit the glass cap.
ø Do not give a shock large enough to cause

distortion.

ø Do not scrub or scratch the glass surface.

– Even a soft cloth or applicator, if dry, could

cause dust to scratch the glass.

2. Electrostatic Damage

As compared with general MOS-LSI, CCD has
lower ESD. Therefore, take the following anti-static
measures when handling the CCD :

1) Always discharge static electricity by grounding
the human body and the instrument to be used.
To ground the human body, provide resistance
of about 1 M$ between the human body and
the ground to be on the safe side.

2) When directly handling the device with the
fingers, hold the part without leads and do not
touch any lead.

Glass cap

Package
Lead

Fixed

Stand-off

Fixed

Lead

Stand-off

Low melting point glass

11

PRECAUTIONS FOR CCD AREA SENSORS

3) To avoid generating static electricity,
a. do not scrub the glass surface with cloth or

plastic.

b. do not attach any tape or labels.

c. do not clean the glass surface with dust-

cleaning tape.

4) When storing or transporting the device, put it in
a container of conductive material.

3. Dust and Contamination

Dust or contamination on the glass surface could
deteriorate the output characteristics or cause a
scar. In order to minimize dust or contamination on
the glass surface, take the following precautions :

1) Handle the CCD in a clean environment such
as a cleaned booth. (The cleanliness level
should be, if possible, class 1 000 at least.)

2) Do not touch the glass surface with the fingers.
If dust or contamination gets on the glass
surface, the following cleaning method is
recommended :
ø Dust from static electricity should be blown

off with an ionized air blower. For anti­electrostatic measures, however, ground all
the leads on the device before blowing off
the dust.

ø The contamination on the glass surface

should be wiped off with a clean applicator
soaked in Isopropyl alcohol. Wipe slowly and
gently in one direction only.

– Frequently replace the applicator and do not

use the same applicator to clean more than
one device.

◊ Note : In most cases, dust and contamination

are unavoidable, even before the device
is first used. It is, therefore, recommended
that the above procedures should be
taken to wipe out dust and contamination
before using the device.

4. Other

1) Soldering should be manually performed within
5 seconds at 350 °C maximum at soldering iron.

2) Avoid using or storing the CCD at high tem­perature or high humidity as it is a precise
optical component. Do not give a mechanical
shock to the CCD.

3) Do not expose the device to strong light. For
the color device, long exposure to strong light
will fade the color of the color filters.

12

PRECAUTIONS FOR CCD AREA SENSORS