Datasheet LZ2324HJ, LZ2323H5 Datasheet (Sharp)

Page 1
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
1

DESCRIPTION

The LZ2323H5/LZ2324HJ are 1/3-type (6.0 mm) solid-state image sensors that consist of PN photo­diodes and CCDs (charge-coupled devices). With approximately 320 000 pixels (542 horizontal x 582 vertical), the sensor provides a stable high-resolution color (LZ2323H5)/B/W (LZ2324HJ) image.

FEATURES

• Number of effective pixels : 512 (H) x 582 (V)
• Number of optical black pixels – Horizontal : 2 front and 28 rear
• Pixel pitch : 9.6 µm (H) x 6.3 µm (V)
• Mg, G, Cy, and Ye complementary color filters (For LZ2323H5)
• Low fixed-pattern noise and lag
• No burn-in and no image distortion
• Blooming suppression structure
• Built-in output amplifier
• Variable electronic shutter (1/50 to 1/10 000 s)
• Compatible with PAL standard (LZ2323H5)/ CCIR standard (LZ2324HJ)
• Package : 16-pin shrink-pitch WDIP [Ceramic] (WDIP016-N-0500C) Row space : 12.70 mm

COMPARISON TABLE

PIN CONNECTIONS

PRECAUTIONS

• The exit pupil position of lens should be more than 25 mm (LZ2323H5)/20 mm (LZ2324HJ) from the top surface of the CCD.
• Refer to "PRECAUTIONS FOR CCD AREA
SENSORS" for details.
LZ2323H5/LZ2324HJ
LZ2323H5/ LZ2324HJ
1/3-type CCD Area Sensors
with 320 k Pixels
1OD
2Ø
RS
3RD
4OS
5NC
1
6NC2
7ØH2
8
16
15
14
13
12
11
10
9Ø
H1
GND
Ø
V4
ØV3
ØV2
ØV1
PW
OFD
T
1
16-PIN SHRINK-PITCH WDIP
TOP VIEW
(WDIP016-N-0500C)
Characteristics
TV standard
LZ2324HJ
CCIR standard (B/W)
LZ2323H5
PAL standard (Color)
Refer to each following specification.
Page 2
LZ2323H5/LZ2324HJ
2

PIN DESCRIPTION

ABSOLUTE MAXIMUM RATINGS

(TA = +25 ˚C)
SYMBOL PIN NAME
RD Reset transistor drain OD Output transistor drain OS Output signals Ø
RS Reset transistor clock
ØV1, ØV2, ØV3, ØV4 Vertical shift register clock Ø
H1, ØH2 Horizontal shift register clock
OFD Overflow drain PW P-well GND Ground T
1 Test pin
NC
1, NC2 No connection
PARAMETER SYMBOL RATING UNIT
Output transistor drain voltage V
OD 0 to +18 V
Reset transistor drain voltage V
RD 0 to +18 V
Overflow drain voltage VOFD 0 to +55 V Test pin, T
1 VT1 0 to +18 V
Reset gate clock voltage V
ØRS –0.3 to +18 V
Vertical shift register clock voltage VØV –9.0 to +18 V Horizontal shift register clock voltage V
ØH –0.3 to +18 V
Voltage difference between P-well and vertical clock VPW-VØV –27 to 0 V Storage temperature T
STG –40 to +85 ˚C
Ambient operating temperature T
OPR –20 to +70 ˚C
1
NOTE
NOTE :
1. The OFD clock ØOFD is excluded.
Page 3
LZ2323H5/LZ2324HJ
3

RECOMMENDED OPERATING CONDITIONS

PARAMETER SYMBOL MIN. TYP. MAX. UNIT NOTE
Ambient operating temperature T
OPR 25.0 ˚C
Output transistor drain voltage V
OD 14.5 15.0 16.0 V
Reset transistor drain voltage VRD VOD V Overflow drain voltage
When DC is applied V
OFD 5.0 19.0 V 1
When pulse is applied p-p level
VØOFD 21.5 V 2 Ground GND 0.0 V P-well voltage V
PW –9.0 VØVL V
Test pin, T
1 VT1 VOD V
Vertical shift register clock
LOW level
V
ØV1L, VØV2L
VØV3L, VØV4L
–8.5 –8.0 –7.5 V
INTERMEDIATE level
V
ØV1I, VØV2I
VØV3I, VØV4I
0.0 V
HIGH level V
ØV1H, VØV3H 14.5 15.0 17.0 V
Horizontal shift register clock
LOW level V
ØH1L, VØH2L –0.05 0.0 0.05 V
HIGH level V
ØH1H, VØH2H
4.7
5.0 6.0 V
Reset gate clock
LOW level V
ØRSL 0.0
V
RD
– 13.0
V
HIGH level V
ØRSH
VRD – 8.5
9.5 V
Vertical shift register clock frequency
f
ØV1, fØV2
fØV3, fØV4
15.63 kHz
Horizontal shift register clock frequency f
ØH1, fØH2 9.66 MHz
Reset gate clock frequency fØRS 9.66 MHz
LZ2323H5 LZ2324HJ 4.5
NOTES :
• Connect NC1 and NC2 to GND directly or through a capacitor larger than 0.047 µF.
1. When DC voltage is applied, shutter speed is 1/50-second.
2. When pulse is applied, shutter speed is less than 1/50-second.
* To apply power, first connect GND and then turn on V
OFD. After turning on VOFD, turn on PW first and then turn on other
powers and pulses. Do not connect the device to or disconnect it from the plug socket while power is being applied.
Page 4
LZ2323H5/LZ2324HJ
4

CHARACTERISTICS FOR LZ2323H5 (Drive method : Field accumulation)

(T
A = +25 ˚C, Operating conditions : The typical values specified in "
RECOMMENDED OPERATING CONDITIONS
".
Color temperature of light source : 3 200 K, IR cut-off filter (CM-500, 1 mmt) is used.)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT NOTE
Standard output voltage V
O 150 mV 2
Photo response non-uniformity PRNU 15 % 3 Saturation output voltage V
SAT 650 mV 4
Dark output voltage V
DARK 0.3 3.0 mV 1, 5
Dark signal non-uniformity DSNU 0.6 2.0 mV 1, 6 Sensitivity R 400 550 mV 7 Smear ratio SMR –81 –76 dB 8 Image lag AI 1.0 % 9 Blooming suppression ratio ABL 100 10 Output transistor drain current I
OD 4.0 8.0 mA
Output impedance RO 350 $ Vector breakup 7.0 ˚, % 11 Line crawling 3.0 % 12 Luminance flicker 2.0 % 13
NOTES :
•VOFD should be adjusted to the minimum voltage such that ABL satisfy the specification, or to the value displayed on the device.
1. T
A = +60 ˚C
2. The average output voltage under uniform illumination. The standard exposure conditions are defined as when Vo is 150 mV.
3. The image area is divided into 10 x 10 segments under the standard exposure conditions. Each segment's voltage is the average output voltage of all pixels within the segment. PRNU is defined by (Vmax – Vmin)/Vo, where Vmax and Vmin are the maximum and minimum values of each segment's voltage respectively.
4. The output voltage measured at the carrier peak when the carrier signal reaches maximum.
5. The average output voltage under non-exposure conditions.
6. The image area is divided into 10 x 10 segments under non-exposure conditions. DSNU is defined by (Vdmax – Vdmin), where Vdmax and Vdmin are the maximum and minimum values of each segment's voltage respectively.
7. The average output voltage when a 1 000 lux light source with a 90% reflector is imaged by a lens of F4, f50 mm.
8. The sensor is exposed only in the central area of V/10 square with a lens at F4, where V is the vertical image size. SMR is defined by the ratio of the output voltage detected during the vertical blanking period to the maximum output voltage in the V/10 square.
9. The sensor is exposed at the exposure level corresponding to the standard conditions. AI is defined by the ratio of the output voltage measured at the 1st field during the non-exposure period to the standard output voltage.
10. The sensor is exposed only in the central area of V/10 square, where V is the vertical image size. ABL is defined by the ratio of the exposure at the standard conditions to the exposure at a point where blooming is observed.
11. Observed with a vector scope when the color bar chart is imaged under the standard exposure conditions.
12. The difference between the average output voltage of the (Mg + Ye), (G + Cy) line and that of the (Mg + Cy), (G + Ye) line under the standard exposure conditions.
13. The difference between the average output voltage of the odd field and that of the even field under the standard exposure conditions.
Page 5
LZ2323H5/LZ2324HJ
5

CHARACTERISTICS FOR LZ2324HJ (Drive method : Field accumulation)

(T
A = +25 ˚C, Operating conditions : The typical values specified in "
RECOMMENDED OPERATING CONDITIONS
".
Color temperature of light source : 3 200 K, IR cut-off filter (CM-500, 1 mmt) is used.)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT NOTE
Standard output voltage V
O 150 mV 2
Photo response non-uniformity PRNU 10 % 3 Saturation output voltage V
SAT 650 mV 4
Dark output voltage V
DARK 0.3 3.0 mV 1, 5
Dark signal non-uniformity DSNU 0.6 2.0 mV 1, 6 Sensitivity R 500 700 mV 7 Smear ratio SMR –90 –76 dB 8 Image lag AI 1.0 % 9 Blooming suppression ratio ABL 100 10 Output transistor drain current I
OD 4.0 8.0 mA
Output impedance RO 350 $
NOTES :
•VOFD should be adjusted to the minimum voltage such that ABL satisfy the specification, or to the value displayed on the device.
1. T
A = +60 ˚C
2. The average output voltage under uniform illumination. The standard exposure conditions are defined as when Vo is 150 mV.
3. The image area is divided into 10 x 10 segments under the standard exposure conditions. Each segment's voltage is the average output voltage of all pixels within the segment. PRNU is defined by (Vmax – Vmin)/Vo, where Vmax and Vmin are the maximum and minimum values of each segment's voltage respectively.
4. The image area is divided into 10 x 10 segments. Each segment's voltage is the average output voltage of all pixels within the segment. V
SAT is the minimum
segment's voltage under 10 times exposure of the standard exposure conditions.
5. The average output voltage under non-exposure conditions.
6. The image area is divided into 10 x 10 segments under non-exposure conditions. DSNU is defined by (Vdmax – Vdmin), where Vdmax and Vdmin are the maximum and minimum values of each segment's voltage respectively.
7. The average output voltage when a 1 000 lux light source with a 90% reflector is imaged by a lens of F4, f50 mm.
8. The sensor is exposed only in the central area of V/10 square with a lens at F4, where V is the vertical image size. SMR is defined by the ratio of the output voltage detected during the vertical blanking period to the maximum output voltage in the V/10 square.
9. The sensor is exposed at the exposure level corresponding to the standard conditions. AI is defined by the ratio of the output voltage measured at the 1st field during the non-exposure period to the standard output voltage.
10. The sensor is exposed only in the central area of V/10 square, where V is the vertical image size. ABL is defined by the ratio of the exposure at the standard conditions to the exposure at a point where blooming is observed.
Page 6
LZ2323H5/LZ2324HJ
6

PIXEL STRUCTURE

,
,
,
,
y
y
y
y
512 (H) x 582 (V)
1 pin
OPTICAL BLACK
(2 PIXELS)
OPTICAL BLACK
(28 PIXELS)

COLOR FILTER ARRAY (FOR LZ2323H5)

G Mg G Mg G
Cy Ye Cy Ye Cy
Mg G Mg G Mg
Cy Ye Cy Ye Cy
G Mg G Mg G
Cy Ye Cy Ye Cy
Mg G Mg G Mg
Ye Cy Ye Cy Ye
G Mg G Mg G
Ye Cy Ye Cy Ye
Mg G Mg G Mg
Ye Cy Ye Cy Ye
G Mg G Mg G
Cy Ye Cy Ye Cy
Mg G Mg G Mg
Cy Ye Cy Ye Cy
G Mg G Mg G
Cy Ye Cy Ye Cy
(1, 582) (512, 582)
(1, 1) (512, 1)
2nd, 4th field
1st, 3rd
field
Mg G Mg G Mg
Ye Cy Ye Cy Ye
G Mg G Mg G
Ye Cy Ye Cy Ye
Mg G Mg G Mg
Ye Cy Ye Cy Ye
,
y
,
y
,
y
,
y
Page 7
LZ2323H5/LZ2324HJ
7

TIMING CHART

580
+
581
582
1 + 2
3 + 4
5 + 6
7 + 8
OS
Ø
OFD
ØV4
ØV3
ØV2
ØV1
VD
HD
(1st, 3rd FIELD)
Shutter speed
1/2 000 s
VERTICAL TRANSFER TIMING
579
+
580
581
+
582 1
2 + 3
4 + 5
6 + 7
OS
Ø
OFD
ØV4
ØV3
ØV2
ØV1
VD
HD
(2nd, 4th FIELD)
HORIZONTAL TRANSFER TIMING
OS
Ø
RS
ØH2
ØH1
HD
512 OB (28)
OB (2)
ØOFD
ØV4
ØV3
ØV2
ØV1
618, 1 60
29 49
39
54
24
34 64
62 72
59
OUTPUT (512) 1
πππ
Page 8
LZ2323H5/LZ2324HJ
8
READOUT TIMING
ØV4
ØV3
ØV2
ØV1
HD
(1st, 3rd FIELD)
(2nd, 4th FIELD)
READOUT TIMING
ØV4
ØV3
ØV2
ØV1
HD
1
29
39
24
34 64
54
59 161
180
290 338
242 290
449
618, 1 60
29
39
54
6434
59
4949
60
1
29
39
24
34 64
54
59 161
180
290 338
242 290
618, 1 60
54
64450
59
49
60
Page 9
LZ2323H5/LZ2324HJ
9

SYSTEM CONFIGURATION EXAMPLE

OD
OS
RD
OFD
PW
Ø
RS
ØH2 ØH1
GND Ø
V4
ØV3 ØV2 ØV1
NC2
NC1
T1
V3B V3A V1B V1A VMa
VH
V4
V2
VL
VMb
POFD
NC
VH
VL (VPW)
V4X
VOD
V3X
V2X
V1X
VH3AX
VH1AX
+5 V
OFDX
ØH1
ØH2
ØRS
CCD
OUT
100 k$
100 $
1 M$
0.1 µF
270 pF
1 000 pF
+
+
+
V
OFDH
VH3BX OFDX V
2X
V1X
V3X VDD GND
V
4X
VH3AX
VH1BX
VH1AX
+
+
+
1234567812
242322212019181713
11
14
10
15
9
16
12345678
161514131211109
LR36685
LZ2323H5
or
LZ2324HJ
Page 10
PACKAGES FOR CCD AND CMOS DEVICES
10

PACKAGE (Unit : mm)

0.04
1.66
±0.10
Package (Cerdip)
Glass Lid
CCD
Cross Section A-A'
1
8
14.00
±0.15
16
9
11.20
±0.10
(◊)
12.40
±0.15
6.20
±0.15
0.60
±0.60
7.00
±0.15
1.40
±0.60
θ
CCD
(◊ : Lid's size)
11.20
±0.10
(◊)
Center of effective imaging area and center of package
0.25
±0.10
12.70
±0.25
0.80
±0.05
(◊)
1.05
MIN.
0.46
TYP.
0.90
TYP.
2.63
TYP.
5.24
MAX.
3.42
±0.25
1.27
±0.25
3.90
±0.30
2.60
±0.20
P-1.78
TYP.
A'
A
Rotation error of die : ¬ = 1.5˚
MAX.
M0.25
16 WDIP (WDIP016-N-0500C)
Page 11

PRECAUTIONS FOR CCD AREA SENSORS

1. Package Breakage
In order to prevent the package from being broken, observe the following instructions :
1) The CCD is a precise optical component and the package material is ceramic or plastic. Therefore, ø Take care not to drop the device when
mounting, handling, or transporting.
ø Avoid giving a shock to the package.
Especially when leads are fixed to the socket or the circuit board, small shock could break the package more easily than when the package isn’t fixed.
2) When applying force for mounting the device or any other purposes, fix the leads between a joint and a stand-off, so that no stress will be given to the jointed part of the lead. In addition, when applying force, do it at a point below the stand-off part.
(In the case of ceramic packages)
– The leads of the package are fixed with low
melting point glass, so stress added to a lead could cause a crack in the low melting point glass in the jointed part of the lead.
(In the case of plastic packages)
– The leads of the package are fixed with
package body (plastic), so stress added to a lead could cause a crack in the package body (plastic) in the jointed part of the lead.
3) When mounting the package on the housing, be sure that the package is not bent.
– If a bent package is forced into place
between a hard plate or the like, the pack­age may be broken.
4) If any damage or breakage occurs on the sur­face of the glass cap, its characteristics could deteriorate.
Therefore,
ø Do not hit the glass cap. ø Do not give a shock large enough to cause
distortion.
ø Do not scrub or scratch the glass surface.
– Even a soft cloth or applicator, if dry, could
cause dust to scratch the glass.
2. Electrostatic Damage
As compared with general MOS-LSI, CCD has lower ESD. Therefore, take the following anti-static measures when handling the CCD :
1) Always discharge static electricity by grounding the human body and the instrument to be used. To ground the human body, provide resistance of about 1 M$ between the human body and the ground to be on the safe side.
2) When directly handling the device with the fingers, hold the part without leads and do not touch any lead.
Glass cap
Package Lead
Fixed
Stand-off
Fixed
Lead
Stand-off
Low melting point glass
11
PRECAUTIONS FOR CCD AREA SENSORS
Page 12
3) To avoid generating static electricity, a. do not scrub the glass surface with cloth or
plastic.
b. do not attach any tape or labels.
c. do not clean the glass surface with dust-
cleaning tape.
4) When storing or transporting the device, put it in a container of conductive material.
3. Dust and Contamination
Dust or contamination on the glass surface could deteriorate the output characteristics or cause a scar. In order to minimize dust or contamination on the glass surface, take the following precautions :
1) Handle the CCD in a clean environment such as a cleaned booth. (The cleanliness level should be, if possible, class 1 000 at least.)
2) Do not touch the glass surface with the fingers. If dust or contamination gets on the glass surface, the following cleaning method is recommended : ø Dust from static electricity should be blown
off with an ionized air blower. For anti­electrostatic measures, however, ground all the leads on the device before blowing off the dust.
ø The contamination on the glass surface
should be wiped off with a clean applicator soaked in Isopropyl alcohol. Wipe slowly and gently in one direction only.
– Frequently replace the applicator and do not
use the same applicator to clean more than one device.
◊ Note : In most cases, dust and contamination
are unavoidable, even before the device is first used. It is, therefore, recommended that the above procedures should be taken to wipe out dust and contamination before using the device.
4. Other
1) Soldering should be manually performed within 5 seconds at 350 °C maximum at soldering iron.
2) Avoid using or storing the CCD at high tem­perature or high humidity as it is a precise optical component. Do not give a mechanical shock to the CCD.
3) Do not expose the device to strong light. For the color device, long exposure to strong light will fade the color of the color filters.
12
PRECAUTIONS FOR CCD AREA SENSORS
Loading...