Datasheet LZ2324HJ, LZ2323H5 Datasheet (Sharp)

In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.

1

DESCRIPTION

The LZ2323H5/LZ2324HJ are 1/3-type (6.0 mm) solid-state image sensors that consist of PN photodiodes and CCDs (charge-coupled devices). With approximately 320 000 pixels (542 horizontal x 582 vertical), the sensor provides a stable high-resolution color (LZ2323H5)/B/W (LZ2324HJ) image.

FEATURES

• Number of effective pixels : 512 (H) x 582 (V)

• Number of optical black pixels – Horizontal : 2 front and 28 rear

• Pixel pitch : 9.6 µm (H) x 6.3 µm (V)

• Mg, G, Cy, and Ye complementary color filters (For LZ2323H5)

• Low fixed-pattern noise and lag

• No burn-in and no image distortion

• Blooming suppression structure

• Built-in output amplifier

• Variable electronic shutter (1/50 to 1/10 000 s)

• Compatible with PAL standard (LZ2323H5)/ CCIR standard (LZ2324HJ)

• Package : 16-pin shrink-pitch WDIP [Ceramic] (WDIP016-N-0500C) Row space : 12.70 mm

COMPARISON TABLE

PIN CONNECTIONS

PRECAUTIONS

• The exit pupil position of lens should be more than 25 mm (LZ2323H5)/20 mm (LZ2324HJ) from the top surface of the CCD.

• Refer to "PRECAUTIONS FOR CCD AREA

SENSORS" for details.

LZ2323H5/LZ2324HJ

LZ2323H5/ LZ2324HJ

1/3-type CCD Area Sensors

with 320 k Pixels

1OD

2Ø

RS

3RD

4OS

5NC

1

6NC2

7ØH2

8

16

15

14

13

12

11

10

9Ø

H1

GND

Ø

V4

ØV3

ØV2

ØV1

PW

OFD

T

1

16-PIN SHRINK-PITCH WDIP

TOP VIEW

(WDIP016-N-0500C)

Characteristics

TV standard

LZ2324HJ

CCIR standard (B/W)

LZ2323H5

PAL standard (Color)

Refer to each following specification.

LZ2323H5/LZ2324HJ

2

PIN DESCRIPTION

ABSOLUTE MAXIMUM RATINGS

(TA = +25 ˚C)

SYMBOL PIN NAME

RD Reset transistor drain OD Output transistor drain OS Output signals Ø

RS Reset transistor clock

ØV1, ØV2, ØV3, ØV4 Vertical shift register clock Ø

H1, ØH2 Horizontal shift register clock

OFD Overflow drain PW P-well GND Ground T

1 Test pin

NC

1, NC2 No connection

PARAMETER SYMBOL RATING UNIT

Output transistor drain voltage V

OD 0 to +18 V

Reset transistor drain voltage V

RD 0 to +18 V

Overflow drain voltage VOFD 0 to +55 V Test pin, T

1 VT1 0 to +18 V

Reset gate clock voltage V

ØRS –0.3 to +18 V

Vertical shift register clock voltage VØV –9.0 to +18 V Horizontal shift register clock voltage V

ØH –0.3 to +18 V

Voltage difference between P-well and vertical clock VPW-VØV –27 to 0 V Storage temperature T

STG –40 to +85 ˚C

Ambient operating temperature T

OPR –20 to +70 ˚C

1

NOTE

NOTE :

1. The OFD clock ØOFD is excluded.

LZ2323H5/LZ2324HJ

3

RECOMMENDED OPERATING CONDITIONS

PARAMETER SYMBOL MIN. TYP. MAX. UNIT NOTE

Ambient operating temperature T

OPR 25.0 ˚C

Output transistor drain voltage V

OD 14.5 15.0 16.0 V

Reset transistor drain voltage VRD VOD V Overflow drain voltage

When DC is applied V

OFD 5.0 19.0 V 1

When pulse is applied p-p level

VØOFD 21.5 V 2 Ground GND 0.0 V P-well voltage V

PW –9.0 VØVL V

Test pin, T

1 VT1 VOD V

Vertical shift register clock

LOW level

V

ØV1L, VØV2L

VØV3L, VØV4L

–8.5 –8.0 –7.5 V

INTERMEDIATE level

V

ØV1I, VØV2I

VØV3I, VØV4I

0.0 V

HIGH level V

ØV1H, VØV3H 14.5 15.0 17.0 V

Horizontal shift register clock

LOW level V

ØH1L, VØH2L –0.05 0.0 0.05 V

HIGH level V

ØH1H, VØH2H

4.7

5.0 6.0 V

Reset gate clock

LOW level V

ØRSL 0.0

V

RD

– 13.0

V

HIGH level V

ØRSH

VRD – 8.5

9.5 V

Vertical shift register clock frequency

f

ØV1, fØV2

fØV3, fØV4

15.63 kHz

Horizontal shift register clock frequency f

ØH1, fØH2 9.66 MHz

Reset gate clock frequency fØRS 9.66 MHz

LZ2323H5 LZ2324HJ 4.5

NOTES :

• Connect NC1 and NC2 to GND directly or through a capacitor larger than 0.047 µF.

1. When DC voltage is applied, shutter speed is 1/50-second.

2. When pulse is applied, shutter speed is less than 1/50-second.

* To apply power, first connect GND and then turn on V

OFD. After turning on VOFD, turn on PW first and then turn on other

powers and pulses. Do not connect the device to or disconnect it from the plug socket while power is being applied.

LZ2323H5/LZ2324HJ

4

CHARACTERISTICS FOR LZ2323H5 (Drive method : Field accumulation)

(T

A = +25 ˚C, Operating conditions : The typical values specified in "

RECOMMENDED OPERATING CONDITIONS

".

Color temperature of light source : 3 200 K, IR cut-off filter (CM-500, 1 mmt) is used.)

PARAMETER SYMBOL MIN. TYP. MAX. UNIT NOTE

Standard output voltage V

O 150 mV 2

Photo response non-uniformity PRNU 15 % 3 Saturation output voltage V

SAT 650 mV 4

Dark output voltage V

DARK 0.3 3.0 mV 1, 5

Dark signal non-uniformity DSNU 0.6 2.0 mV 1, 6 Sensitivity R 400 550 mV 7 Smear ratio SMR –81 –76 dB 8 Image lag AI 1.0 % 9 Blooming suppression ratio ABL 100 10 Output transistor drain current I

OD 4.0 8.0 mA

Output impedance RO 350 $ Vector breakup 7.0 ˚, % 11 Line crawling 3.0 % 12 Luminance flicker 2.0 % 13

NOTES :

•VOFD should be adjusted to the minimum voltage such that ABL satisfy the specification, or to the value displayed on the device.

1. T

A = +60 ˚C

2. The average output voltage under uniform illumination. The standard exposure conditions are defined as when Vo is 150 mV.

3. The image area is divided into 10 x 10 segments under the standard exposure conditions. Each segment's voltage is the average output voltage of all pixels within the segment. PRNU is defined by (Vmax – Vmin)/Vo, where Vmax and Vmin are the maximum and minimum values of each segment's voltage respectively.

4. The output voltage measured at the carrier peak when the carrier signal reaches maximum.

5. The average output voltage under non-exposure conditions.

6. The image area is divided into 10 x 10 segments under non-exposure conditions. DSNU is defined by (Vdmax – Vdmin), where Vdmax and Vdmin are the maximum and minimum values of each segment's voltage respectively.

7. The average output voltage when a 1 000 lux light source with a 90% reflector is imaged by a lens of F4, f50 mm.

8. The sensor is exposed only in the central area of V/10 square with a lens at F4, where V is the vertical image size. SMR is defined by the ratio of the output voltage detected during the vertical blanking period to the maximum output voltage in the V/10 square.

9. The sensor is exposed at the exposure level corresponding to the standard conditions. AI is defined by the ratio of the output voltage measured at the 1st field during the non-exposure period to the standard output voltage.

10. The sensor is exposed only in the central area of V/10 square, where V is the vertical image size. ABL is defined by the ratio of the exposure at the standard conditions to the exposure at a point where blooming is observed.

11. Observed with a vector scope when the color bar chart is imaged under the standard exposure conditions.

12. The difference between the average output voltage of the (Mg + Ye), (G + Cy) line and that of the (Mg + Cy), (G + Ye) line under the standard exposure conditions.

13. The difference between the average output voltage of the odd field and that of the even field under the standard exposure conditions.

LZ2323H5/LZ2324HJ

5

CHARACTERISTICS FOR LZ2324HJ (Drive method : Field accumulation)

(T

A = +25 ˚C, Operating conditions : The typical values specified in "

RECOMMENDED OPERATING CONDITIONS

".

Color temperature of light source : 3 200 K, IR cut-off filter (CM-500, 1 mmt) is used.)

PARAMETER SYMBOL MIN. TYP. MAX. UNIT NOTE

Standard output voltage V

O 150 mV 2

Photo response non-uniformity PRNU 10 % 3 Saturation output voltage V

SAT 650 mV 4

Dark output voltage V

DARK 0.3 3.0 mV 1, 5

Dark signal non-uniformity DSNU 0.6 2.0 mV 1, 6 Sensitivity R 500 700 mV 7 Smear ratio SMR –90 –76 dB 8 Image lag AI 1.0 % 9 Blooming suppression ratio ABL 100 10 Output transistor drain current I

OD 4.0 8.0 mA

Output impedance RO 350 $

NOTES :

•VOFD should be adjusted to the minimum voltage such that ABL satisfy the specification, or to the value displayed on the device.

1. T

A = +60 ˚C

2. The average output voltage under uniform illumination. The standard exposure conditions are defined as when Vo is 150 mV.

3. The image area is divided into 10 x 10 segments under the standard exposure conditions. Each segment's voltage is the average output voltage of all pixels within the segment. PRNU is defined by (Vmax – Vmin)/Vo, where Vmax and Vmin are the maximum and minimum values of each segment's voltage respectively.

4. The image area is divided into 10 x 10 segments. Each segment's voltage is the average output voltage of all pixels within the segment. V

SAT is the minimum

segment's voltage under 10 times exposure of the standard exposure conditions.

5. The average output voltage under non-exposure conditions.

6. The image area is divided into 10 x 10 segments under non-exposure conditions. DSNU is defined by (Vdmax – Vdmin), where Vdmax and Vdmin are the maximum and minimum values of each segment's voltage respectively.

7. The average output voltage when a 1 000 lux light source with a 90% reflector is imaged by a lens of F4, f50 mm.

8. The sensor is exposed only in the central area of V/10 square with a lens at F4, where V is the vertical image size. SMR is defined by the ratio of the output voltage detected during the vertical blanking period to the maximum output voltage in the V/10 square.

9. The sensor is exposed at the exposure level corresponding to the standard conditions. AI is defined by the ratio of the output voltage measured at the 1st field during the non-exposure period to the standard output voltage.

10. The sensor is exposed only in the central area of V/10 square, where V is the vertical image size. ABL is defined by the ratio of the exposure at the standard conditions to the exposure at a point where blooming is observed.

LZ2323H5/LZ2324HJ

6

PIXEL STRUCTURE

,

y

512 (H) x 582 (V)

1 pin

OPTICAL BLACK

(2 PIXELS)

OPTICAL BLACK

(28 PIXELS)

COLOR FILTER ARRAY (FOR LZ2323H5)

G Mg G Mg G

Cy Ye Cy Ye Cy

Mg G Mg G Mg

Cy Ye Cy Ye Cy

G Mg G Mg G

Cy Ye Cy Ye Cy

Mg G Mg G Mg

Ye Cy Ye Cy Ye

G Mg G Mg G

Ye Cy Ye Cy Ye

Mg G Mg G Mg

Ye Cy Ye Cy Ye

G Mg G Mg G

Cy Ye Cy Ye Cy

Mg G Mg G Mg

Cy Ye Cy Ye Cy

G Mg G Mg G

Cy Ye Cy Ye Cy

(1, 582) (512, 582)

(1, 1) (512, 1)

2nd, 4th field

1st, 3rd

field

Mg G Mg G Mg

Ye Cy Ye Cy Ye

G Mg G Mg G

Ye Cy Ye Cy Ye

Mg G Mg G Mg

Ye Cy Ye Cy Ye

,

y

,

y

,

y

,

y

LZ2323H5/LZ2324HJ

7

TIMING CHART

580

+

581

582

1 + 2

3 + 4

5 + 6

7 + 8

OS

Ø

OFD

ØV4

ØV3

ØV2

ØV1

VD

HD

(1st, 3rd FIELD)

Shutter speed

1/2 000 s

VERTICAL TRANSFER TIMING

579

+

580

581

+

582 1

2 + 3

4 + 5

6 + 7

OS

Ø

OFD

ØV4

ØV3

ØV2

ØV1

VD

HD

(2nd, 4th FIELD)

HORIZONTAL TRANSFER TIMING

OS

Ø

RS

ØH2

ØH1

HD

…

512 OB (28)

OB (2)

ØOFD

ØV4

ØV3

ØV2

ØV1

618, 1 60

29 49

39

54

24

34 64

62 72

59

OUTPUT (512) 1

πππ

LZ2323H5/LZ2324HJ

8

READOUT TIMING

ØV4

ØV3

ØV2

ØV1

HD

(1st, 3rd FIELD)

(2nd, 4th FIELD)

READOUT TIMING

ØV4

ØV3

ØV2

ØV1

HD

1

29

39

24

34 64

54

59 161

180

290 338

242 290

449

618, 1 60

29

39

54

6434

59

4949

60

1

29

39

24

34 64

54

59 161

180

290 338

242 290

618, 1 60

54

64450

59

49

60

LZ2323H5/LZ2324HJ

9

SYSTEM CONFIGURATION EXAMPLE

OD

OS

RD

OFD

PW

Ø

RS

ØH2 ØH1

GND Ø

V4

ØV3 ØV2 ØV1

NC2

NC1

T1

V3B V3A V1B V1A VMa

VH

V4

V2

VL

VMb

POFD

NC

VH

VL (VPW)

V4X

VOD

V3X

V2X

V1X

VH3AX

VH1AX

+5 V

OFDX

ØH1

ØH2

ØRS

CCD

OUT

100 k$

100 $

1 M$

0.1 µF

270 pF

1 000 pF

+

V

OFDH

VH3BX OFDX V

2X

V1X

V3X VDD GND

V

4X

VH3AX

VH1BX

VH1AX

+

1234567812

242322212019181713

11

14

10

15

9

16

12345678

161514131211109

LR36685

LZ2323H5

or

LZ2324HJ

PACKAGES FOR CCD AND CMOS DEVICES

10

PACKAGE (Unit : mm)

0.04

1.66

±0.10

Package (Cerdip)

Glass Lid

CCD

Cross Section A-A'

1

8

14.00

±0.15

16

9

11.20

±0.10

(◊)

12.40

±0.15

6.20

±0.15

0.60

±0.60

7.00

±0.15

1.40

±0.60

θ

CCD

(◊ : Lid's size)

11.20

±0.10

(◊)

Center of effective imaging area and center of package

0.25

±0.10

12.70

±0.25

0.80

±0.05

(◊)

1.05

MIN.

0.46

TYP.

0.90

TYP.

2.63

TYP.

5.24

MAX.

3.42

±0.25

1.27

±0.25

3.90

±0.30

2.60

±0.20

P-1.78

TYP.

A'

A

Rotation error of die : ¬ = 1.5˚

MAX.

M0.25

16 WDIP (WDIP016-N-0500C)

PRECAUTIONS FOR CCD AREA SENSORS

1. Package Breakage

In order to prevent the package from being broken, observe the following instructions :

1) The CCD is a precise optical component and the package material is ceramic or plastic. Therefore, ø Take care not to drop the device when

mounting, handling, or transporting.

ø Avoid giving a shock to the package.

Especially when leads are fixed to the socket or the circuit board, small shock could break the package more easily than when the package isn’t fixed.

2) When applying force for mounting the device or any other purposes, fix the leads between a joint and a stand-off, so that no stress will be given to the jointed part of the lead. In addition, when applying force, do it at a point below the stand-off part.

(In the case of ceramic packages)

– The leads of the package are fixed with low

melting point glass, so stress added to a lead could cause a crack in the low melting point glass in the jointed part of the lead.

(In the case of plastic packages)

– The leads of the package are fixed with

package body (plastic), so stress added to a lead could cause a crack in the package body (plastic) in the jointed part of the lead.

3) When mounting the package on the housing, be sure that the package is not bent.

– If a bent package is forced into place

between a hard plate or the like, the package may be broken.

4) If any damage or breakage occurs on the surface of the glass cap, its characteristics could deteriorate.

Therefore,

ø Do not hit the glass cap. ø Do not give a shock large enough to cause

distortion.

ø Do not scrub or scratch the glass surface.

– Even a soft cloth or applicator, if dry, could

cause dust to scratch the glass.

2. Electrostatic Damage

As compared with general MOS-LSI, CCD has lower ESD. Therefore, take the following anti-static measures when handling the CCD :

1) Always discharge static electricity by grounding the human body and the instrument to be used. To ground the human body, provide resistance of about 1 M$ between the human body and the ground to be on the safe side.

2) When directly handling the device with the fingers, hold the part without leads and do not touch any lead.

Glass cap

Package Lead

Fixed

Stand-off

Fixed

Lead

Stand-off

Low melting point glass

11

PRECAUTIONS FOR CCD AREA SENSORS

3) To avoid generating static electricity, a. do not scrub the glass surface with cloth or

plastic.

b. do not attach any tape or labels.

c. do not clean the glass surface with dust-

cleaning tape.

4) When storing or transporting the device, put it in a container of conductive material.

3. Dust and Contamination

Dust or contamination on the glass surface could deteriorate the output characteristics or cause a scar. In order to minimize dust or contamination on the glass surface, take the following precautions :

1) Handle the CCD in a clean environment such as a cleaned booth. (The cleanliness level should be, if possible, class 1 000 at least.)

2) Do not touch the glass surface with the fingers. If dust or contamination gets on the glass surface, the following cleaning method is recommended : ø Dust from static electricity should be blown

off with an ionized air blower. For antielectrostatic measures, however, ground all the leads on the device before blowing off the dust.

ø The contamination on the glass surface

should be wiped off with a clean applicator soaked in Isopropyl alcohol. Wipe slowly and gently in one direction only.

– Frequently replace the applicator and do not

use the same applicator to clean more than one device.

◊ Note : In most cases, dust and contamination

are unavoidable, even before the device is first used. It is, therefore, recommended that the above procedures should be taken to wipe out dust and contamination before using the device.

4. Other

1) Soldering should be manually performed within 5 seconds at 350 °C maximum at soldering iron.

2) Avoid using or storing the CCD at high temperature or high humidity as it is a precise optical component. Do not give a mechanical shock to the CCD.

3) Do not expose the device to strong light. For the color device, long exposure to strong light will fade the color of the color filters.

12

PRECAUTIONS FOR CCD AREA SENSORS