Datasheet LZ2316AR, LZ2315A Datasheet (Sharp)

In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in
catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.

1

DESCRIPTION

The LZ2315A/LZ2316AR are 1/3-type (6.0 mm)
solid-state image sensors that consist of PN photo­diodes and CCDs (charge-coupled devices) driven
by dual-power-supply. With approximately 270 000
pixels (542 horizontal x 492 vertical), the sensor
provides a stable high-resolution color (LZ2315A)/
B/W (LZ2316AR) normal or mirror image.

FEATURES

• Number of effective pixels : 512 (H) x 492 (V)

• Number of optical black pixels
– Horizontal : 2 front and 28 rear

• Pixel pitch : 9.6 µm (H) x 7.5 µm (V)

• Mg, G, Cy, and Ye complementary color filters
(For LZ2315A)

• Low fixed-pattern noise and lag

• No burn-in and no image distortion

• Blooming suppression structure

• Built-in output amplifier

• Built-in pulse mix circuit

• Built-in overflow drain voltage circuit and reset
gate voltage circuit

• Variable electronic shutter (1/60 to 1/10 000 s)

• Normal or mirror image output available from
common output pin

• Compatible with NTSC standard (LZ2315A)/
EIA standard (LZ2316AR)

• Package :
16-pin shrink-pitch WDIP [Ceramic]
(WDIP016-N-0500C)
Row space : 12.70 mm

PIN CONNECTIONS

PRECAUTIONS

• The exit pupil position of lens should be more
than 25 mm (LZ2315A)/20 mm (LZ2316AR) from
the top surface of the CCD.

• Refer to "PRECAUTIONS FOR CCD AREA

SENSORS" for details.

LZ2315A/LZ2316AR

LZ2315A/
LZ2316AR

Dual-power-supply (5 V/12 V) Operation

1/3-type CCD Area Sensors with 270 k Pixels

1ØRS

2RD

3GND

4OS

5OD

6Ø

H2B

7ØH2

8

16

15

14

13

12

11

10

9Ø

H1B

T1

OFD

Ø

TG

ØV2

ØV1

ØV4

ØV3

ØH1

16-PIN SHRINK-PITCH WDIP

TOP VIEW

(WDIP016-N-0500C)

Characteristics

TV standard

LZ2316AR

EIA standard (B/W)

LZ2315A

NTSC standard (Color)

Refer to each following specification.

COMPARISON TABLE

LZ2315A/LZ2316AR

2

PIN DESCRIPTION

ABSOLUTE MAXIMUM RATINGS

(TA = +25 ˚C)

SYMBOL PIN NAME

RD Reset transistor drain
OD Output transistor drain
OS Output signals
Ø

RS Reset transistor clock

ØV1, ØV2, ØV3, ØV4 Vertical shift register clock
Ø

H1, ØH2, ØH1B, ØH2B Horizontal shift register clock

ØTG Transfer gate clock
OFD Overflow drain
GND Ground
T

1 Test pin

PARAMETER SYMBOL RATING UNIT

Output transistor drain voltage V

OD 0 to +15 V

Reset transistor drain voltage V

RD 0 to +15 V

Overflow drain voltage VOFD Internal output V
Test pin, T

1 VT1 0 to +15 V

Reset gate clock voltage VØRS Internal output V
Vertical shift register clock voltage V

ØV 0 to +7.5 V

Horizontal shift register clock voltage V

ØH –0.3 to +7.5 V

Transfer gate clock voltage VØTG –0.3 to +15 V
Storage temperature T

STG –40 to +85 ˚C

Ambient operating temperature TOPR –20 to +70 ˚C

2

1

NOTE

NOTES :

1. ØRS, OFD : Use the circuit parameter indicated in "SYSTEM CONFIGURATION
EXAMPLE", and do not connect to DC voltage directly. When not using electronic shutter,

connect OFD to GND through a 0.1 µF capacitor and a 1 M$ resistor.

2. Ø

V1-ØV4 : Input the clock through a 0.1 µF capacitor.

3. Ø

TG : Use the circuit parameter indicated in "SYSTEM CONFIGURATION EXAMPLE".

NOTES :

1. Do not connect to DC voltage directly. When OFD is connected to GND, connect VOD to GND. Overflow drain clock is
applied below 13 Vp-p.

2. Do not connect to DC voltage directly. When Ø

RS is connected to GND, connect VOD to GND. Reset gate clock is

applied below 8 Vp-p.

1

3

2

1

NOTE

3

LZ2315A/LZ2316AR

RECOMMENDED OPERATING CONDITIONS

PARAMETER SYMBOL MIN. TYP. MAX. UNIT NOTE

Ambient operating temperature T

OPR 25.0 ˚C

Output transistor drain voltage V

OD 12.0 12.5 13.0 V

Reset transistor drain voltage VRD VOD V

Ground GND 0.0 V
Test pin, T

1 VT1 VOD V

Horizontal shift register
clock

LOW level

V

ØH1L, VØH2L

VØH1BL, VØH2BL

–0.05 0.0 0.05 V

HIGH level

V

ØH1H, VØH2H

VØH1BH, VØH2BH

4.7 5.0 5.5 V

Reset gate clock p-p level V

ØRS 4.5

Vertical shift register clock frequency

f

ØV1, fØV2

fØV3, fØV4

15.73 kHz

Horizontal shift register clock frequency

f

ØH1, fØH2

fØH1B, fØH2B

9.53 MHz

Reset gate clock frequency f

ØRS 9.53 MHz

1V13.012.512.0V

ØOFDOverflow drain clock

V0.050.0–0.05V

ØTGL

Transfer gate clock

LOW level
HIGH level V

ØTGH 12.0 12.5 13.0 V

p-p level

Vertical shift register
clock

V

ØV1, VØV2

VØV3, VØV4

4.7 5.0 5.5 V 1

p-p level

5.0 5.5 V 1

2ns18.010.05.0tw

1, tw2Horizontal shift register clock phase

NOTES :

1. Use the circuit parameter indicated in "SYSTEM CONFIGURATION EXAMPLE", and do not connect to DC voltage directly.

2.

* To apply power, first connect GND and then turn on V

OD and then turn on other powers and pulses. Do not connect the

device to or disconnect it from the plug socket while power is being applied.

ØH1, ØH2

ØH1B, ØH2B : Normal image output mode
Ø

H1B, ØH2B : Mirror image output mode

tw1 tw2

LZ2315A/LZ2316AR

4

CHARACTERISTICS FOR LZ2315A (Drive method : Field accumulation)

(T

A = +25 ˚C, Operating conditions : The typical values specified in "

RECOMMENDED OPERATING CONDITIONS

".

Color temperature of light source : 3 200 K, IR cut-off filter (CM-500, 1 mmt) is used.)

PARAMETER SYMBOL MIN. TYP. MAX. UNIT NOTE

Standard output voltage V

O 150 mV 2

Photo response non-uniformity PRNU 15 % 3
Saturation output voltage V

SAT 650 mV 4

Dark output voltage V

DARK 0.5 mV 1, 5

Dark signal non-uniformity DSNU 0.5 mV 1, 6
Sensitivity R 420 600 mV 7
Smear ratio SMR –110 –90 dB 8
Image lag AI 1.0 % 9
Blooming suppression ratio ABL 1 000 10
Output transistor drain current I

OD 4.0 8.0 mA

Output impedance RO 400 $
Vector breakup 10.0 ˚, % 11
Line crawling 3.0 % 12
Luminance flicker 2.0 % 13

NOTES :

• Within the recommended operating conditions of VOD,
V

OFD of the internal output satisfies with ABL larger than

1 000 times exposure of the standard exposure conditions,
and V

SAT larger than 650 mV.

1. T

A = +60 ˚C

2. The average output voltage under uniform illumination.
The standard exposure conditions are defined as when
Vo is 150 mV.

3. The image area is divided into 10 x 10 segments under
the standard exposure conditions. Each segment's
voltage is the average output voltage of all pixels within
the segment. PRNU is defined by (Vmax – Vmin)/Vo,
where Vmax and Vmin are the maximum and minimum
values of each segment's voltage respectively.

4. The image area is divided into 10 x 10 segments. Each
segment's voltage is the average output voltage of all
pixels within the segment. V

SAT is the minimum

segment's voltage under 10 times exposure of the
standard exposure conditions.

5. The average output voltage under non-exposure
conditions.

6. The image area is divided into 10 x 10 segments under
non-exposure conditions. DSNU is defined by (Vdmax –
Vdmin), where Vdmax and Vdmin are the maximum and
minimum values of each segment's voltage respectively.

7. The average output voltage when a 1 000 lux light
source with a 90% reflector is imaged by a lens of F4,
f50 mm.

8. The sensor is exposed only in the central area of V/10
square with a lens at F4, where V is the vertical image
size. SMR is defined by the ratio of the output voltage
detected during the vertical blanking period to the
maximum output voltage in the V/10 square.

9. The sensor is exposed at the exposure level
corresponding to the standard conditions. AI is defined
by the ratio of the output voltage measured at the 1st
field during the non-exposure period to the standard
output voltage.

10. The sensor is exposed only in the central area of V/10
square, where V is the vertical image size. ABL is
defined by the ratio of the exposure at the standard
conditions to the exposure at a point where blooming is
observed.

11. Observed with a vector scope when the color bar chart
is imaged under the standard exposure conditions.

12. The difference between the average output voltage of the
(Mg + Ye), (G + Cy) line and that of the (Mg + Cy), (G +
Ye) line under the standard exposure conditions.

13. The difference between the average output voltage of
the odd field and that of the even field under the
standard exposure conditions.

5

LZ2315A/LZ2316AR

CHARACTERISTICS FOR LZ2316AR (Drive method : Field accumulation)

(T

A = +25 ˚C, Operating conditions : The typical values specified in "

RECOMMENDED OPERATING CONDITIONS

".

Color temperature of light source : 3 200 K, IR cut-off filter (CM-500, 1 mmt) is used.)

PARAMETER SYMBOL MIN. TYP. MAX. UNIT NOTE

Standard output voltage V

O 150 mV 2

Photo response non-uniformity PRNU 15 % 3
Saturation output voltage V

SAT 650 mV 4

Dark output voltage V

DARK 0.5 mV 1, 5

Dark signal non-uniformity DSNU 0.5 mV 1, 6
Sensitivity R 700 1 000 mV 7
Smear ratio SMR –110 –90 dB 8
Image lag AI 1.0 % 9
Blooming suppression ratio ABL 1 000 10
Output transistor drain current I

OD 4.0 8.0 mA

Output impedance RO 400 $

NOTES :

• Within the recommended operating conditions of VOD,
V

OFD of the internal output satisfies with ABL larger than

1 000 times exposure of the standard exposure conditions,
and V

SAT larger than 650 mV.

1. T

A = +60 ˚C

2. The average output voltage under uniform illumination.
The standard exposure conditions are defined as when
Vo is 150 mV.

3. The image area is divided into 10 x 10 segments under
the standard exposure conditions. Each segment's
voltage is the average output voltage of all pixels within
the segment. PRNU is defined by (Vmax – Vmin)/Vo,
where Vmax and Vmin are the maximum and minimum
values of each segment's voltage respectively.

4. The image area is divided into 10 x 10 segments. Each
segment's voltage is the average output voltage of all
pixels within the segment. V

SAT is the minimum

segment's voltage under 10 times exposure of the
standard exposure conditions.

5. The average output voltage under non-exposure
conditions.

6. The image area is divided into 10 x 10 segments under
non-exposure conditions. DSNU is defined by (Vdmax –
Vdmin), where Vdmax and Vdmin are the maximum and
minimum values of each segment's voltage respectively.

7. The average output voltage when a 1000 lux light
source with a 90% reflector is imaged by a lens of F4,
f50 mm.

8. The sensor is exposed only in the central area of V/10
square with a lens at F4, where V is the vertical image
size. SMR is defined by the ratio of the output voltage
detected during the vertical blanking period to the
maximum output voltage in the V/10 square.

9. The sensor is exposed at the exposure level
corresponding to the standard conditions. AI is defined
by the ratio of the output voltage measured at the 1st
field during the non-exposure period to the standard
output voltage.

10. The sensor is exposed only in the central area of V/10
square, where V is the vertical image size. ABL is
defined by the ratio of the exposure at the standard
conditions to the exposure at a point where blooming is
observed.

LZ2315A/LZ2316AR

6

PIXEL STRUCTURE

,

,

,

,

y

y

y

y

512 (H) x 492 (V)

OPTICAL BLACK

(2 PIXELS)

OPTICAL BLACK

(28 PIXELS)

COLOR FILTER ARRAY (FOR LZ2315A)

Ye Cy Ye Cy Ye

GMgGMgG

Ye Cy Ye Cy Ye

MgGMgGMg

Ye Cy Ye Cy Ye

GMgGMgG

Cy Ye Cy Ye Cy

G Mg G Mg G

Cy Ye Cy Ye Cy

Mg G Mg G Mg

Cy Ye Cy Ye Cy

G Mg G Mg G

Cy Ye Cy Ye Cy

Mg G Mg G Mg

Cy Ye Cy Ye Cy

G Mg G Mg G

Cy Ye Cy Ye Cy

Mg G Mg G Mg

Ye Cy Ye Cy Ye

MgGMgGMg

Ye Cy Ye Cy Ye

GMgGMgG

Ye Cy Ye Cy Ye

MgGMgGMg

(1, 492) (512, 492)

(1, 1) (512, 1)

EVEN
field

ODD
field

,

y

,

y

,

y

,

y

LZ2315A/LZ2316AR

7

TIMING CHART

484

+



485

486

+



487

488

+



489

492490

+



491

1
+



2

3
+



4

5
+



6

7
+



8

9
+



10

11

+



12

OS

Ø

TG

ØV4

ØV3

ØV2

ØV1

VD

HD

(ODD FIELD)

VERTICAL TRANSFER TIMING <NORMAL OUTPUT>

483

+



484

485

+



486

487

+



488

489

+



490

491

+



492

2
+



3




1

4
+



5

6
+



7

8
+



9

10

+



11

OS

Ø

TG

ØV4

ØV3

ØV2

ØV1

VD

HD

(EVEN FIELD)

525 1 10 17 19

263 272 279 282

OS

Ø

RS

ØH2

ØH1

HD

OB (28)

OUTPUT (512) 1

ππππππππππ

ØOFD

ØV4

ØV3

ØV2

ØV1

HORIZONTAL TRANSFER TIMING <NORMAL OUTPUT>

606, 1 60

84.524

24

49

39

54

29

34 64

62 72

59

π512

PRESCAN (4)

OB (2)

ØV4

ØTG

ØV3

ØV2

ØV1

HD

(ODD FIELD)

(EVEN FIELD)

READOUT TIMING <NORMAL OUTPUT>

ØV4

ØTG

ØV3

ØV2

ØV1

HD

1

24

60

29

39

54

6434

59

49

60

1

29

39

24

60

54

6434

338242

59

49

60

25.36 µs (242 bits)

25.36 µs (242 bits)

63.5 µs (606 bits)

63.5 µs (606 bits)

338242

10.06 µs (96 bits)

606, 1

606, 1

10.06 µs (96 bits)

LZ2315A/LZ2316AR

8

LZ2315A/LZ2316AR

9

482

+



483

484

+



485

486

+



487

490

+



491

492



488

+



489

1

+



2

3
+



4

5

+



6

7
+



8

9
+



10

OS

Ø

TG

ØV4

ØV3

ØV2

ØV1

VD

HD

(ODD FIELD)

VERTICAL TRANSFER TIMING <MIRROR OUTPUT>

481

+



482

483

+



484

485

+



486

487

+



488

489

+



490

491

+



492

2
+



3




1

4
+



5

6
+



7

8
+



9

OS

Ø

TG

ØV4

ØV3

ØV2

ØV1

VD

HD

(EVEN FIELD)

525 1

10

17 19

263

272 279

282

OS

Ø

RS

ØH2

ØH1

HD

OUTPUT (512) 512

πππππππππ

ØOFD

ØV4

ØV3

ØV2

ØV1

HORIZONTAL TRANSFER TIMING <MIRROR OUTPUT>

4 58.5

4

29

19

34

9

14

44

42 52

39

ππππ

1

OB (2)

OB (28)PRESCAN (4)

606, 1 60

LZ2315A/LZ2316AR

10

ØV4

ØTG

ØV3

ØV2

ØV1

HD

(ODD FIELD)

(EVEN FIELD)

READOUT TIMING <MIRROR OUTPUT>

ØV4

ØTG

ØV3

ØV2

ØV1

HD

1

4

606, 1

606, 1

60

29

39

34

4414

19

9

60

1

29

19

4

60

34

4414

318

39

9

60

222

23.27 µs (222 bits)

23.27 µs (222 bits)

63.5 µs (606 bits)

318222

10.06 µs (96 bits)

63.5 µs (606 bits)

10.06 µs (96 bits)

LZ2315A/LZ2316AR

11

SYSTEM CONFIGURATION EXAMPLE

ØH1

ØV1

ØV4

RD

GND

Ø

V3

OFD

T

1

ØH1B
ØH2
ØH2B
OD
OS

Ø

TG

ØV2

ØRS

CCD

OUT

2SC4627

1 M$

1 k$

10 $

1 M$

10 $

0.47 µF

0.1 µF

0.1 µF

0.1 µF

0.1 µF

1 000 pF

0.01 µF

91011121314

(*1)(*3)

(*2)

(*1)

1516

87654321

LZ2315A

or

LZ2316AR

VOD

ØRS

OFDX

TGX

Ø

H2

ØH1B

ØH1

ØH2B

ØV4

ØV1

ØV3

ØV2

(*1) ØRS, OFD :

Use the circuit parameter indicated in

this circuit example, and do not connect

to DC voltage directly.

When not using electronic shutter,

connect OFD to GND through a 0.1 µF

capacitor and a 1 M$ resistor.

(*2) Ø

V1-ØV4 :

Input the clock through a 0.1 µF

capacitor.

(*3) Ø

TG :

Use the circuit parameter indicated in

this circuit example.

• Example of drive circuit with LR38580 driver IC.

PACKAGES FOR CCD AND CMOS DEVICES

12

PACKAGE (Unit : mm)

0.04

1.66

±0.10

Package (Cerdip)

Glass Lid

CCD

Cross Section A-A'

1

8

14.00

±0.15

16

9

11.20

±0.10

(◊)

12.40

±0.15

6.20

±0.15

0.60

±0.60

7.00

±0.15

1.40

±0.60

θ

CCD

(◊ : Lid's size)

11.20

±0.10

(◊)

Center of effective imaging area
and center of package

0.25

±0.10

12.70

±0.25

0.80

±0.05

(◊)

1.05

MIN.

0.46

TYP.

0.90

TYP.

2.63

TYP.

5.24

MAX.

3.42

±0.25

1.27

±0.25

3.90

±0.30

2.60

±0.20

P-1.78

TYP.

A'

A

Rotation error of die : ¬ = 1.5˚

MAX.

M0.25

16 WDIP (WDIP016-N-0500C)

PRECAUTIONS FOR CCD AREA SENSORS

1. Package Breakage

In order to prevent the package from being broken,
observe the following instructions :

1) The CCD is a precise optical component and
the package material is ceramic or plastic.
Therefore,
ø Take care not to drop the device when

mounting, handling, or transporting.

ø Avoid giving a shock to the package.

Especially when leads are fixed to the socket
or the circuit board, small shock could break
the package more easily than when the
package isn’t fixed.

2) When applying force for mounting the device or
any other purposes, fix the leads between a
joint and a stand-off, so that no stress will be
given to the jointed part of the lead. In addition,
when applying force, do it at a point below the
stand-off part.

(In the case of ceramic packages)

– The leads of the package are fixed with low

melting point glass, so stress added to a
lead could cause a crack in the low melting
point glass in the jointed part of the lead.

(In the case of plastic packages)

– The leads of the package are fixed with

package body (plastic), so stress added to a
lead could cause a crack in the package
body (plastic) in the jointed part of the lead.

3) When mounting the package on the housing,
be sure that the package is not bent.

– If a bent package is forced into place

between a hard plate or the like, the pack­age may be broken.

4) If any damage or breakage occurs on the sur­face of the glass cap, its characteristics could
deteriorate.

Therefore,

ø Do not hit the glass cap.
ø Do not give a shock large enough to cause

distortion.

ø Do not scrub or scratch the glass surface.

– Even a soft cloth or applicator, if dry, could

cause dust to scratch the glass.

2. Electrostatic Damage

As compared with general MOS-LSI, CCD has
lower ESD. Therefore, take the following anti-static
measures when handling the CCD :

1) Always discharge static electricity by grounding
the human body and the instrument to be used.
To ground the human body, provide resistance
of about 1 M$ between the human body and
the ground to be on the safe side.

2) When directly handling the device with the
fingers, hold the part without leads and do not
touch any lead.

Glass cap

Package
Lead

Fixed

Stand-off

Fixed

Lead

Stand-off

Low melting point glass

13

PRECAUTIONS FOR CCD AREA SENSORS

3) To avoid generating static electricity,
a. do not scrub the glass surface with cloth or

plastic.

b. do not attach any tape or labels.

c. do not clean the glass surface with dust-

cleaning tape.

4) When storing or transporting the device, put it in
a container of conductive material.

3. Dust and Contamination

Dust or contamination on the glass surface could
deteriorate the output characteristics or cause a
scar. In order to minimize dust or contamination on
the glass surface, take the following precautions :

1) Handle the CCD in a clean environment such
as a cleaned booth. (The cleanliness level
should be, if possible, class 1 000 at least.)

2) Do not touch the glass surface with the fingers.
If dust or contamination gets on the glass
surface, the following cleaning method is
recommended :
ø Dust from static electricity should be blown

off with an ionized air blower. For anti­electrostatic measures, however, ground all
the leads on the device before blowing off
the dust.

ø The contamination on the glass surface

should be wiped off with a clean applicator
soaked in Isopropyl alcohol. Wipe slowly and
gently in one direction only.

– Frequently replace the applicator and do not

use the same applicator to clean more than
one device.

◊ Note : In most cases, dust and contamination

are unavoidable, even before the device
is first used. It is, therefore, recommended
that the above procedures should be
taken to wipe out dust and contamination
before using the device.

4. Other

1) Soldering should be manually performed within
5 seconds at 350 °C maximum at soldering iron.

2) Avoid using or storing the CCD at high tem­perature or high humidity as it is a precise
optical component. Do not give a mechanical
shock to the CCD.

3) Do not expose the device to strong light. For
the color device, long exposure to strong light
will fade the color of the color filters.

14

PRECAUTIONS FOR CCD AREA SENSORS