Datasheet LZ1418E100R Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

LZ1418E100R

NPN microwave power transistor

Product specification
Supersedes data of June 1992

1997 Feb 18

Philips Semiconductors Product specification

NPN microwave power transistor LZ1418E100R

FEATURES

• Interdigitated structure provides high emitter efficiency

• Diffused emitter ballasting resistor provides excellent

current sharing and withstanding a high VSWR

• Gold metallization realizes very stable characteristics
and excellent lifetime

• Multicell geometry gives good balance of dissipated
power and low thermal resistance

• Internal input and output prematching ensures good
stability and allows an easier design of wideband
circuits.

APPLICATIONS

• Common emitter class A amplifiers in CW conditions for
military and professional applications between

1.4 to 1.8 GHz.

DESCRIPTION

NPN silicon planar epitaxial microwave power transistor in
a SOT443A metal ceramic flange package with the emitter
connected to the flange.

PINNING - SOT443A

PIN DESCRIPTION

1 collector
2 base
3 emitter connected to flange

handbook, halfpage

1

2

Top view

Fig.1 Simplified outline and symbol.

c

b

3

e

MAM314

QUICK REFERENCE DATA

Microwave performance up to T

MODE OF OPERATION

=25°C in a common emitter class A wideband amplifier.

mb

f

(GHz)

V

(V)

CE

I

(A)

C

P

L1

(W)

G

po

(dB)

Zi; Z

(Ω)

L

Class-A (CW) 1.4 to 1.8 16 2 ≥9 ≥10 see Fig 7

WARNING

Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.

All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.

1997 Feb 18 2

Philips Semiconductors Product specification

NPN microwave power transistor LZ1418E100R

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CER

V

CEO

V

EBO

I

C

P

tot

T

stg

T

j

T

sld

collector-base voltage open emitter − 45 V
collector-emitter voltage RBE= 220 Ω−30 V
collector-emitter voltage open base − 20 V
emitter-base voltage open collector − 3V
collector current (DC) − 4A
total power dissipation Tmb≥ 75 °C − 45 W
storage temperature −65 +200 °C
operating junction temperature − 200 °C
soldering temperature at 0.2 mm from flange;

− 235 °C

t ≤ 10 s

10

handbook, halfpage

I

C

(A)

1

−1

10

−2

10

110

Tmb≤ 75°C.
(1) Region of permissible DC operation.
(2) Permissible extension provided RBE≤ 220 Ω.

(1) (2)

Fig.2 DC SOAR.

MGL003

2

V

(V)

CE

10

handbook,

P
(W)

50

tot

40

30

20

10

0

0 50 100 200

150

Tmb (°C)

Fig.3 Power derating curve.

MGD970

1997 Feb 18 3

Philips Semiconductors Product specification

NPN microwave power transistor LZ1418E100R

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS MAX. UNIT

R

th j-mb

R

th mb-h

Note

1. See

CHARACTERISTICS

=25°C unless otherwise specified.

T

mb

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

I

CBO

I

CER

I

CEO

I

EBO

h

FE

thermal resistance from junction to mounting-base Tj=75°C 2.2 K/W
thermal resistance from mounting-base to heatsink Tj=75°C; note 1 0.2 K/W

“Mounting recommendations in the General part of handbook SC19a”.

collector cut-off current VCB= 20 V; IE=0 − 2mA

V

= 40 V; IE=0 − 20 mA

CB

collector cut-off current VCE= 30 V; RBE= 220 Ω− 20 mA
collector cut-off current VCE= 20 V; IB=0 − 20 mA
emitter cut-off current VEB= 1.5 V; IC=0 − 200 µA
DC current gain VCE=3V; IC=2A 15 − 100

APPLICATION INFORMATION

Microwave performance up to T

MODE OF OPERATION

=25°C in a common emitter class-A wideband amplifier; note 1.

mb

f

(GHz)

V

(V)

CE

I

C

(A)

Class-A (CW) 1.4 to 1.8 16 2 ≥9

typ. 10

Note

1. Amplifier consists of test circuit board without any additional tuning.

P

L1

(W)

G

po

(dB)

≥10

typ. 11

Zi; Z

L

(Ω)

see Fig 7

1997 Feb 18 4

Philips Semiconductors Product specification

NPN microwave power transistor LZ1418E100R

handbook, full pagewidth

input
50 Ω

100 pF

ATC

Dimensions in mm.
Substrate: Epsilam printed-circuit board.
Thickness: 0.635 mm.
Permittivity: εr= 10.

Fig.4 Wideband test circuit board for 1.4 to1.8 GHz, CW class A application.

ferrite

bead

0.65

V

BB

16

5

3 3 6 5 6 2 6 1.52.5

4

10

V

CC

6

0.65

3

output

50 Ω

100 pF

ATC

MGK059

15

handbook, halfpage

P

L1

(W)

10

5

1.3 1.6

VCE= 16 V; IC= 2 A (regulated); Tmb=25°C.

f (GHz)

Fig.5 Load power as a function of frequency;

typical values.

MGL010

1.9

15

handbook, halfpage

G

po

(dB)

10

5

1.3 1.6 1.9

VCE= 16 V; IC= 2 A (regulated); Tmb=25°C.

Fig.6 Linear power gain as a function of

frequency; typical values.

MGD982

f (GHz)

1997 Feb 18 5

Philips Semiconductors Product specification

NPN microwave power transistor LZ1418E100R

handbook, full pagewidth

0.2

+

j

0

− j

0.2

Zo=10Ω; VCE= 16 V; IC= 2 A (regulated); Tmb=25°C.

Fig.7 Input and load impedances as functions of frequency; typical values.

1

0.5

1.4

z

i

1.8 GHz

0.2 0.5 1 2 5 10

1.7 1.6

1.8 GHz

0.5

1.5

1.4

Z

L

1

2

2

5

10

∞

10

5

MGL063

1997 Feb 18 6

Philips Semiconductors Product specification

NPN microwave power transistor LZ1418E100R

PACKAGE OUTLINE

handbook, full pagewidth

3.5

2.9

3.4

3.2

0.1

X

seating plane

3

Y

1

2

24 max

3.1

0.5

4 min

Y

6.4

max

1.7 max

0.5 X

10.5

10.5
max23max

max

0.5 X

16.5

Dimensions in mm.
Torque on nut: Max. 0.5 Nm.
Recommended screw: M3.

Fig.8 SOT443A.

1997 Feb 18 7

MBC663

0.5 Y

Philips Semiconductors Product specification

NPN microwave power transistor LZ1418E100R

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1997 Feb 18 8

Philips Semiconductors Product specification

NPN microwave power transistor LZ1418E100R

NOTES

1997 Feb 18 9

Philips Semiconductors Product specification

NPN microwave power transistor LZ1418E100R

NOTES

1997 Feb 18 10

Philips Semiconductors Product specification

NPN microwave power transistor LZ1418E100R

NOTES

1997 Feb 18 11

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Printed in The Netherlands 127147/00/02/pp12 Date of release: 1997 Feb 18 Document order number: 9397 75001728