Datasheet HMC239S8 Datasheet (Hittite)

'99

new!

MICROWAVE CORPORATION

INDUSTRY STANDARD SOIC8 SPDT SWITCH DC - 2.5 GHz

FEBRUARY 2001

HMC239S8

7

Features

LOW INSERTION LOSS: 0.4 dB

HIGH ISOLATION: 35 dB

FAST SWITCHING SPEED: 2ns

HIGH INPUT IP3: +50 dBm

General Description

The HMC239S8 is a low cost GaAS MMIC
SPDT switch in an 8-lead SOIC package.
The switch can control signals from DC to

2.5 GHz. It is especially suited for low or
medium power applications which require
extremely fast switching, with minimal inser­tion loss. The two control voltages require a
minimal amount of DC current which is opti­mal for battery powered radio systems. RF1
or RF2 is a reflective short when "Off".
The HMC239S8 switch is a pin for pin re­placement for the M/A-COM SW239, offer­ing improved input IP3 from +46 dBm
(SW239) to +50 dBm (HMC239).

Guaranteed Performance Vctl = 0/-5V, 50 Ohm System, -40 to +85 deg C

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SWITCHES

ssoLnoitresnI

SPDT

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ssoLnruteR

SMT

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tpecretnIredrOdrihTtupnIlortnoCV5-/0

)enoThcaEmBd7+(

scitsiretcarahCgnihctiwS

)FR%01/09/FR%09/01(LLAFt/ESIRt
)FR%01/09otLTC%05(FFOt/NOt

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone] Web Site: www.hittite.com

zHG1.0-CD
zHG5.0-CD
zHG0.1-CD
zHG0.2-CD
zHG5.2-CD

zHG5.0-CD
zHG0.1-CD
zHG0.2-CD
zHG5.2-CD

zHG0.1-CD
zHG0.2-CD
zHG5.2-CD

zHG5.2-5.0
zHG0.1-5.0

zHG5.2-5.0

zHG5.2-CD

33
62
81
41

81
71
51

52
32

54
44

7 - 102

4.0

4.0

5.0

6.0

7.0

63
92

12

71

12
12

02
92

72
05

94

2

01

6.0

6.0

7.0

8.0

0.1

Bd
Bd
Bd
Bd
Bd

Bd
Bd
Bd
Bd

Bd
Bd
Bd

mBd
mBd

mBd
mBd

Sn
Sn

MICROWAVE CORPORATION

HMC239S8 SOIC8 SPDT SWITCH DC - 2.5 GHz

new!

HMC239S8

FEBRUARY 2001

'99

Insertion Loss

0

-0.5

-1

-1.5

-2

INSERTION LOSS (dB)

-2.5

-3
0123

FREQUENCY (GHz)

Return Loss

0

Isolation

0

-10

-20

-30

-40

ISOLATION (dB)

-50

-60
0123

RF1

RF2

FREQUENCY (GHz)

7

-10

-20

RETURN LOSS (dB)

-30

-40
0123

FREQUENCY (GHz)

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone] Web Site: www.hittite.com

7 - 103

SWITCHES

SPDT

SMT

'99

new!

MICROWAVE CORPORATION

HMC239S8 SOIC8 SPDT SWITCH DC - 2.5 GHz

FEBRUARY 2001

Input 0.1 and 1.0 dB
Compression vs Control Voltage

35

30

25

COMPRESSION (dBm)

20

P1 dB at 900 MHz

P0.1 dB at 1900 MHz

CONTROL VOLTAGE (Vdc)

P1 dB at 1900 MHz

P0.1 dB at 900 MHz

HMC239S8

Input Third Order
Distortion vs Control Voltage

55

900 MHz

50

1900 MHz

IP3 (dBm)

45

-9-8-7-6-5-4

CONTROL VOLTAGE (Vdc)

-9-8-7-6-5-4

7

Compression vs Bias Voltage

SWITCHES

SPDT

Caution: Do not operate in 1dB compression at power levels above
+30dBm and do not 'hot switch' power levels greater than +20dBm
(V

SMT

zHM009tareirraC zHM0091tareirraC

lortnoC

tupnI

)cdV( )mBd( )mBd( )mBd( )mBd(

5-52923272
6-72136292
8-92338223

= -5Vdc).

CTL

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Bd1.0rof

noisserpmoC

rewoPtupnI

Bd1rof

noisserpmoC

rewoPtupnI

Bd1.0rof

noisserpmoC

Distortion vs Bias Voltage

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tupnIlotnoC

Bd1rof

noisserpmoC

)cdV( zHM009 zHM0091

5-0594

8-3515

)mBd(tpecretnIredrOdrihT

enoThcaEmBd7+

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone] Web Site: www.hittite.com

7 - 104

MICROWAVE CORPORATION

HMC239S8 SOIC8 SPDT SWITCH DC - 2.5 GHz

new!

HMC239S8

FEBRUARY 2001

'99

Functional Diagram

PIN 1

GND

RFC

GND

RF2GND

RF1

B

A

Absolute Maximum Ratings

V(

LTC

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)V8-/0=

)B&A(egnaRegatloVlortnoCcdV21-ot2+

erutarepmeTegarotSC.ged051+ot56-

erutarepmeTgnitarepOC.ged58+ot04-

zHG50.0
zHG2-5.0

mBd72+
mBd43+

T ruth Table

*Control Input Voltage Tolerances are ± 0.2 Vdc

*tupnIlortnoC

A

5-052-01nOffO

05-0152-ffOnO

6-057-03nOffO

06-0357-ffOnO

7-0031-06nOffO

07-06031-ffOnO

8-0091-08nOffO

08-08091-ffOnO

B

)cdV(

aI

)cdV(

lortnoC
tnerruC

bI

)Au(

)Au(

otFR

1FR

htaPlangiS

otFR

2FR

7

Outline

1) MATERIAL:
A) PACKAGE BODY: LOW STRESS INJECTION MOLDED
PLASTIC, SILICA & SILICONE IMPREGNATED
B) LEADFRAME MATERIAL: COPPER ALLOY

2 . PLATING: LEAD-TIN SOLDER PLATE

3. DIMENSIONS ARE IN INCHES (MILLIMETERS)
UNLESS OTHERWISE SPECIFIED TOL. ARE ±0.005(±0.13)

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone] Web Site: www.hittite.com

7 - 105

SWITCHES

SPDT

SMT

'99

new!

MICROWAVE CORPORATION

HMC239S8 SOIC8 SPDT SWITCH DC - 2.5 GHz

FEBRUARY 2001

Typical Application Circuit

Vz=5.1V

Izt=50uA
COMPENSATED
DEVICES
CD4689

TTL
OR
CMOS

10K

VCC
GND GND

VCC

HMC239S8

A

GaAs SWITCH

CONTROL

B

74HCT04 (TTL)
74HC04 (CMOS)

Simple driver using inexpensive standard logic ICs provides fast switching using minimum DC current.

7

SWITCHES

SPDT

SMT

-5 VDC

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone] Web Site: www.hittite.com

7 - 106

MICROWAVE CORPORATION

HMC239S8 SOIC8 SPDT SWITCH DC - 2.5 GHz

Evaluation Circuit Board

new!

HMC239S8

FEBRUARY 2001

'99

The circuit board used in the final application should use RF circuit design techniques. Signal lines should have
50 ohm impedance while the package ground leads should be connected directly to the ground plane similar to
that shown below. A sufficient number of VIA holes should be used to connect the top and bottom ground planes.
The evaluation circuit board as shown is available from Hittite upon request.

Evaluation Circuit Board Layout Design Details

Layout Technique Grounded Co-Planar Waveguide (GCPW)
Material FR4
Dielectric Thickness 0.028" (0.71 mm)
50 Ohm Line Width 0.037" (0.94 mm)
Gap to Ground Edge 0.010" (0.25 mm)
Ground VIA Hole Diameter 0.014" (0.36 mm)

Connectors SMA-F ( EF - Johnson P/N 142-0701-806)

7

SWITCHES

SPDT

SMT

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone] Web Site: www.hittite.com

7 - 107