Datasheet FLM0910-25F Datasheet (Eudyna Devices) [ru]

X-Band Internally Matched FET

FEATURES

・High Output Power: P1dB=44dBm(Typ.)
・High Gain: G1dB=7.0dB(Typ.)
・High PAE: ηadd=30%(Typ.)
・Broad Band: 9.5～10.5GHz
・Impedance Matched Zin/Zout = 50Ω
・Hermetically Sealed Package

DESCRIPTION

The FLM0910-25F is a power GaAs FET that is internally matched
for standard communication bands to provide optimum power and
gain in a 50Ω system.

ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25℃)

Item Symbol Rating Unit

Drain-Source Voltage

Gate-Source Voltage

Total Power Dissipation

Storage Temperature

Channel Temperature Tch

Recommended Operating Condition(Case Temperature Tc=25℃)

Item Symbol

DC Input Voltage

Forward Gate Current

Reverse Gate Current

DS

V

VGS

PT

Tstg

Condition

V

DS

R

IGF

GR RG=25Ω

I

G=25Ω

-65 to +175

FLM0910-25F

15

-5

93.7

175

Limit

≦10

≦64

≧-11.2

V

V

W

℃

℃

Unit

V

mA

mA

ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25℃)

Item Symbol

DSS

Drain Current

Transconductance

Pinch-off Voltage

Gate-Source Breakdown Voltage

Output Power at 1dB G.C.P.

Power Gain at 1dB G.C.P.

Drain Current

Power-added Efficiency

Gain Flatness

Thermal Resistance

Channel Temperature Rise

I

g

m

p

V

VGSO

P1dB

G1dB

dsr

I

add

η

ΔG

Rth

ΔT

ch

CASE STYLE: IK

ESD

Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kΩ)

Edition 1.3
September 2004

Class Ⅲ 2000V　～

Test Conditions

V

DS=5V , VGS=0V

VDS=5V , IDS=6.92A

VDS=5V , IDS=500mA

IGS=-500uA

V

DS=10V

f=9.5 - 10.5 GHz
I

DS=0.6Idss

Zs=Z

L=50Ω

Channel to Case

10V X Idsr X Rth

1

Limit

Min.

-0.5 -1.5 -3.0

-5.0 - -

43 44 -

6.0 7.0 -

Typ. Max.

- 10.8 16.2

- 10000 -

- 6.5 7.2

- 30 -

--±0.6

- 1.4 1.6

- - 100

G.C.P.:Gain Compression Point

Unit

A

mS

V

V

dBm

dB

A

%

dB

℃/W

℃

FLM0910-25F

X-Band Internally Matched FET

OUTPUT POWER & POWER ADDED EFFICIENCY

vs. INPUT POWER

POWER DERATING CURVE

100

80

60

40

20

Total Power Dissipation [W]

0

0 50 100 150 200

Case Temperature [ C]

VDS=10V, IDS(DC)=0.60IDSS, f=10.0GHz

46

44

42

40

38

36

Output Power (dBm)

34

32

24 26 28 30 32 34 36 38 40 42

o

OUTPUT POWER vs. FREQUENCY

VDS=10V, IDS(DC)=0.60IDSS

Input Power (dBm)

70

60

50

40

30

20

10

0

Power Added Efficiency (%)

46

44

42

40

38

36

Output Power (dBm)

34

32

9.2 9.4 9.6 9.8 10 10.2 10.4 10.6 10.8
Freque ncy (GHz)

2

Pin=39dBm

P1dB

Pin=37dBm

Pin=34dBm

Pin=30dBm

Pin=26dBm

■ S-PARAMETER

25

10

10

9.5G H z

9.5G H z

10.5

10.5

±180°

FLM0910-25F

X-Band Internally Matched FET

+90°

10.5

10.5

3

2

Scale for |S

|

21

9.5GH z

10

|

12

0°

9.5GH z

Scale for |S

S11

S22

10

0.2

-90°

VDS=10V , IDS=0.6Idss

Freq

[G H z ]

S11 S21 S12 S22

M AG ANG M AG ANG M AG ANG M AG ANG

90.71 -88.02 2.15 35.09 0.05 15.25 0.26 -77.71

9.10.65 -103.53 2.29 18.28 0.06 -1.55 0.22 -107.05

9.20.59 -120.18 2.40 1.32 0.06 -17.77 0.21 -138.65

9.30.53 -138.00 2.47 -15.34 0.06 -34.01 0.22 -167.56

9.40.47 -156.97 2.51 -31.59 0.06 -49.64 0.24 168.82

9.50.42 -177.22 2.53 -47.33 0.06 -64.58 0.26 149.54

9.60.39 161.48 2.56 -62.74 0.06 -79.62 0.29 133.93

9.70.37 138.88 2.59 -78.13 0.06 -94.61 0.30 120.00

9.80.37 116.07 2.62 -93.65 0.06 -109.43 0.31 107.27

9.90.38 93.62 2.63 -109.43 0.06 -124.61 0.32 95.51
10 0.40 72.47 2.64 -125.14 0.06 -140.33 0.32 84.23

10.10.41 52.59 2.62 -140.95 0.06 -155.72 0.32 73.93

10.20.43 33.84 2.60 -156.81 0.06 -172.24 0.32 63.61

10.30.44 16.24 2.57 -172.15 0.06 171.03 0.32 54.33

10.40.44 -0.56 2.53 172.43 0.06 154.60 0.33 44.93

10.50.44 -17.05 2.50 156.88 0.06 137.92 0.33 35.26

10.60.43 -33.47 2.47 141.58 0.06 120.72 0.33 25.29

10.70.42 -50.45 2.44 126.23 0.06 103.61 0.33 15.68

10.80.40 -68.63 2.43 110.45 0.07 85.80 0.32 6.13

10.90.37 -89.03 2.43 94.22 0.07 68.12 0.30 -2.58
11 0.34 -113.11 2.42 77.32 0.08 50.38 0.27 -9.87

S12

S21

3

FLM0910-25F

X-Band Internally Matched FET

■ Package Out Line

CASE STYLE : IK

Unit : mm

PIN ASSIGMENT
1 : GATE
2 : SOURCE
3 : DRAIN
4 : SOURCE

4

For further information please contact :

Eudyna Devices USA Inc.

2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
TEL: [phone]
FAX: [phone]
www.us.eudyna.com

Eudyna Devices Europe Ltd.

Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: [phone]
FAX: [phone]

Eudyna Devices Asia Pte. Ltd.

Hong Kong Branch
Rm.1101,Ocean Centre, 5 Canton Road
Tsim Sha Tsui, Kowloon, Hong kong
TEL: [phone]
FAX: [phone]

FLM0910-25F

X-Band Internally Matched FET

CAUTION

Eudyna Devices Inc. products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the

environment. For safety, observe the following procedures:

・Do not put these products into the mouth.

・Do not alter the form of this product into a gas, powder, or liquid

through burning, crushing, or chemical processing as these by­products are dangerous to the human body if inhaled, ingested, or
swallowed.

・Observe government laws and company regulations when

discarding this product. This product must be discarded in
accordance with methods specified by applicable hazardous waste
procedures.

Eudyna Devices Inc. reserves the right to change products and
specifications without notice.The information does not convey any
license under rights of Eudyna Devices Inc. or others.

© 2004 Eudyna Devices USA Inc.
Printed in U.S.A.

Eudyna Devices Inc.

1000 Kamisukiahara, showa-cho
Nakakomagun, Yamanashi
409-3883, Japan
(Kokubo Industrial Park)
TEL [phone]
FAX [phone]

Sales Division

1, Kanai-cho, Sakae-ku
Yokohama,244-0845,Japan

TEL [phone]
FAX [phone]

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