Datasheet FDS8928A Datasheet (Fairchild Semiconductor)

FDS8928A
Dual N & P-Channel Enhancement Mode Field Effect Transistor

General Description Features

These dual N- and P -Channel enhancement mode power
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize
on-state resistance and provide superior switching
performance. These devices are particularly suited for low
voltage applications such as notebook computer power
management and other battery powered circuits where fast
switching, low in-line power loss, and resistance to
transients are needed.

N-Channel 5.5 A,30 V, R
R
P-Channel -4 A,-20 V, R
R

=0.030 Ω @ VGS=4.5 V

DS(ON)

DS(ON)

=0.055 Ω @ VGS=-4.5 V

DS(ON)

DS(ON)

High density cell design for extremely low R
High power and current handling capability in a widely used

surface mount package.
Dual (N & P-Channel) MOSFET in surface mount package.

July 1998

=0.038 Ω @ VGS=2.5 V.
=0.072 Ω @ VGS=-2.5 V.

.

DS(ON)

SuperSOTTM-6

SOIC-16SOT-23 SuperSOTTM-8 SO-8 SOT-223

D1

D1

D2

D2

FDS

8928A

5

6

7

3
2

G2

SO-8

pin 1

G1

S1

Absolute Maximum Ratings T

S2

= 25°C unless otherwise noted

A

8

Symbol Parameter N-Channel P-Channel Units

V

DSS

V

GSS

I

D

Drain-Source Voltage 30 -20 V
Gate-Source Voltage 8 -8 V
Drain Current - Continuous (Note 1a) 5.5 -4 A

- Pulsed 20 -20

P

D

Power Dissipation for Dual Operation 2 W
Power Dissipation for Single Operation (Note 1a) 1.6
(Note 1b) 1
(Note 1c) 0.9

TJ,T

Operating and Storage Temperature Range -55 to 150 °C

STG

THERMAL CHARACTERISTICS

R

θJA

R

θ

JC

Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W
Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W

141

© 1998 Fairchild Semiconductor Corporation

FDS8928A Rev. B

Electrical Characteristics (T

= 25°C unless otherwise noted)

A

Symbol Parameter Conditions Type Min Typ Max Units
OFF CHARACTERISTICS

BV

∆BV

I

DSS

I

GSSF

I

GSSR

DSS

DSS

Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA N-Ch 30 V

VGS = 0 V, ID = -250 µA

Breakdown Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 oC N-Ch 32 mV/oC

/∆T

J

ID = -250 µA, Referenced to 25 oC

Zero Gate Voltage Drain Current VDS = 24 V, V

VDS = -16 V, V

= 0 V N-Ch 1 µA

GS

= 0 V

GS

P-Ch -20 V

P-Ch -23

P-Ch -1 µA
Gate - Body Leakage, Forward VGS = 8 V, VDS = 0 V All 100 nA
Gate - Body Leakage, Reverse

VGS = -8 V, V

DS

= 0 V

All -100 nA

ON CHARACTERISTICS (Note 2)

V

∆V

R

I

D(on)

GS(th)

GS(th)

DS(ON)

Gate Threshold Voltage

Gate Threshold Voltage Temp. Coefficient

/∆T

J

Static Drain-Source On-Resistance

On-State Drain Current

V

= VGS, ID = 250 µA

DS

V

= VGS, ID = -250 µA

DS

ID = 250 µA, Referenced to 25 oC
ID = -250 µA, Referenced to 25 oC
V

= 4.5 V, ID = 5.5 A

GS

V

= 2.5 V, ID = 4.5 A 0.031 0.038

GS

V

= -4.5 V, ID = -4 A

GS

V

= -2.5 V, ID = -3.4 A 0.059 0.072

GS

VGS = 4.5 V, VDS= 5 V

N-Ch 0.4 0.67 1 V

P-Ch -0.4 -0.6 -1 V

N-Ch -3

mV/oC
P-Ch 4
N-Ch 0.025 0.03

P-Ch 0.043 0.055

N-Ch 20 A

Ω

VGS = -4.5 V, VDS= -5 V P-Ch -20

g

FS

Forward Transconductance

VDS = 5 V, I D = 5.5 A

N-Ch 20 S

VDS = -5 V, I D = -4 A P-Ch 13 S

DYNAMIC CHARACTERISTICS

C

iss

C

oss

Input Capacitance

VDS = 10 V, VGS = 0 V,
f = 1.0 MHz

Input Capacitance N-Ch 410 pF

VDS = -10 V, VGS = 0 V,

C

rss

Reverse Transfer Capacitance N-Ch 110 pF

f = 1.0 MHz

N-Ch 900 pF
P-Ch 1130

P-Ch 480

P-Ch 120

FDS8928A Rev. B

Electrical Characteristics (continued)

SWITCHING CHARACTERISTICS (Note 2)
Symbol Parameter Conditions Type Min Typ Max Units

t

D(on)

t

r

t

D(off)

t

f

Q

g

Q

gs

Q

gd

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

I

S

V

SD

Notes:

1. R

JA

θ

design while R

Turn - On Delay Time V

= 6 V, I D = 1 A N-Ch 6 12 ns

DS

VGS = 4.5 V , R

GEN

= 6 Ω

P-Ch 8 16

Turn - On Rise Time N-Ch 19 31 ns

P-Ch 23 37

Turn - Off Delay Time VDS= -10 V, I D = -1 A N-Ch 42 67 ns

VGS = -4.5 V , R

GEN

= 6 Ω

P-Ch 260 360

Turn - Off Fall Time N-Ch 13 24 ns

P-Ch 90 125

Total Gate Charge

VDS = 10 V, I D = 5.5 A,
VGS = 4.5 V

N-Ch 19.8 28 nC
P-Ch 20 28

Gate-Source Charge N-Ch 2 nC

VDS = -5 V, I D = -4 A, P-Ch 2.8

Gate-Drain Charge

VGS = -5 V

N-Ch 6.3 nC
P-Ch 3.2

Maximum Continuous Drain-Source Diode Forward Current N-Ch 1.3 A

P-Ch -1.3 A

Drain-Source Diode Forward Voltage VGS = 0 V, IS = 1.3 A

VGS = 0 V, IS = -1.3 A

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R

is determined by the user's board design.

CA

θ

(Note 2) N-Ch 0.68 1.2 V

(Note 2)

P-Ch -0.7 -1.2 V

is guaranteed by

JC

θ

a. 78OC/W on a 0.5 in

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%..

pad of 2oz copper.

2

b. 125OC/W on a 0.02 in

pad of 2oz copper.

2

c. 135OC/W on a 0.003 in

pad of 2oz copper.

2

FDS8928A Rev. B

Typical Electrical Characteristics: N-Channel

30

V = 4.5V

GS

3.0V

24

18

12

6

D

I , DRAIN-SOURCE CURRENT (A)

0

0 1 2 3 4 5

2.5V

2.0V

1.5V

V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 1. On-Region Characteristics.

1.8

I = 5.5 A

D

1.6

V = 4.5 V

GS

1.4

1.2

1

DS(ON)

R , NORMALIZED

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)

J

2

1.6

V = 2.0V

GS

1.2

DS(ON)

R , NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

0.8
0 6 12 18 24 30

2.5 V

3.0V

3.5 V

I , DRAIN CURRENT (A)

D

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

0.1

0.075

0.05

0.025

DS(ON)

R , ON-RESISTANCE (OHM)

0

1 2 3 4 5

V , GATE TO SOURCE VOLTAGE (V)

GS

T = 125°C

A

25°C

4.5V

I = 3A

D

Figure 3. On-Resistance Variation

with Temperature.

20

V =5V

DS

16

12

8

D

I , DRAIN CURRENT (A)

4

0

0 0.5 1 1.5 2 2.5 3

V , GATE TO SOURCE VOLTAGE (V)

GS

Figure 5. Transfer Characteristics.

T = -55°C

A

25°C

125°C

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

20

V = 0V

GS

1

0.1

0.01

0.001

S

I , REVERSE DRAIN CURRENT (A)

0.0001
0 0.2 0.4 0.6 0.8 1 1.2

T = 125°C

A

25°C

-55°C

V , BODY DIODE FORWARD VOLTAGE (V)

SD

Figure 6. Body Diode Forward Voltage

Variation with Source Current
and Temperature.

FDS8928A Rev. B

Typical Electrical Characteristics: N-Channel (continued)

5

I = 5.5A

D

4

3

2

1

GS

V , GATE-SOURCE VOLTAGE (V)

0

0 5 10 15 20 25

Q , GATE CHARGE (nC)

g

V = 5V

DS

10V

15V

Figure 7. Gate Charge Characteristics.

50

10

RDS(ON) LIMIT

3
1

0.3

V = 4.5V

0.1

D

I , DRAIN CURRENT (A)

0.03

0.01

GS

SINGLE PULSE

R =135 °C/W

JA

θ

T = 25°C

A

0.1 0.2 0.5 1 2 5 10 20 30 50
V , DRAI N-SOURCE VOLTAGE (V)

DS

DC

1ms

10ms

100ms

1s

10s

100us

3000

1000

500

200

CAPACITANCE (pF)

f = 1 MHz

80

V = 0V

GS

30

0.1 0.4 1 2 5 10 30
V , DRAIN TO SOURCE VOLTAGE (V)

DS

C

iss

C

oss

C

rss

Figure 8. Capacitance Characteristics.

30

25

20

15

POWER (W)

10

5

0

0.01 0.1 0.5 10 50 100 300
SINGLE PULSE TIME (SEC)

SINGLE PULSE

R =135 °C/W

JA

θ

T = 25°C

A

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum Power

Dissipation.

FDS8928A Rev. B

Typical Electrical Characteristics: P-Channel

30

24

18

V = -4.5V

GS

-3.5V

-3.0V

- 2.5V

-2.0V

12

6

D

-I , DRAIN-SOURCE CURRENT (A)
0

0 1 2 3 4 5

- V , DRAIN-SOURCE VOLTAGE (V)

DS

-1.5V

Figure 11. On-Region Characteristics.

1.6

I = -4.0A

D

V = -4.5V

GS

1.4

1.2

1

DS(ON)

0.8

R , NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)

J

2

1.6

V = - 2.0V

GS

-2.5 V

1.2

DS(ON)

R , NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

0.8
0 6 12 18 24 30

-3.0 V

-3.5V

-I , DRAIN CURRENT (A)

D

-4.5V

Figure 12. On-Resistance Variation with

Drain Current and Gate Voltage.

0.2

0.15

0.1

0.05

DS(ON)

R , ON-RESISTANCE (OHM)

0

0 1 2 3 4 5

-V , GATE TO SOURCE VOLTAGE (V)

GS

T = 125°C

A

25°C

I = -2A

D

Figure 13. On-Resistance Variation

with Temperature.

10

V = -5V

DS

8

6

4

D

- I , DRAIN CURRENT (A)

2

0

0.4 0.8 1.2 1.6 2

-V , GATE TO SOURCE VOLTAGE (V)

GS

T = -55°C

J

25°C

125°C

Figure 15. Transfer Characteristics.

Figure 14. On-Resistance Variation with

Gate-to-Source Voltage.

10

V = 0V

GS

3
1

T =125°C

J

25°C

0.1

0.01

S

- I , REVERSE DRAIN CURRENT (A)

0.001
0 0.2 0.4 0.6 0.8 1 1.2

-V , BODY DIODE FORWARD VOLTAGE (V)

SD

-55°C

Figure 16. Body Diode Forward Voltage

Variation with Source Current
and Temperature.

FDS8928A Rev. B

Typical Electrical Characteristics: P-Channel (continued)

5

I =-4.0A

D

4

3

2

1

GS

-V , GATE-SOURCE VOLTAGE (V)
0

0 4 8 12 16 20

50
20

10

5

RDS(ON) LIMIT

Q , GATE CHARGE (nC)

g

V = -5V

DS

10ms

-15V

100us

1ms

100ms

1

0.3

V = -4.5V

0.1

D

- I , DRAIN CURRENT (A)

0.03

0.01

GS

SINGLE PULSE

R = 135°C/W

JA

θ

T = 25°C

A

A

0.1 0.2 0.5 1 2 5 10 20 30 50

- V , DRAIN-SOURCE VOLTAGE (V)

DS

1s

10s

DC

-10V

3000
2000

C

1000

500

200

CAPACITANCE (pF)

100

f = 1 MHz
V = 0 V

GS

50

0.1 0.2 0.5 1 2 5 10 20

-V , DRAIN TO SOURCE VOLTAGE (V)

DS

iss

C

oss

C

rss

Figure 18. Capacitance Characteristics.Figure 17. Gate Charge Characteristics.

30

25

20

15

POWER (W)

10

5

0

0.01 0.1 0.5 10 50 100 300
SINGLE PULSE TIME (SEC)

SINGLE PULSE
R =135 °C/W

JA

θ

T = 25°C

A

Figure 19. Maximum Safe Operating Area.

Figure 20. Single Pulse Maximum Power

Dissipation.

FDS8928A Rev. B

Typical Thermal Characteristics: N & P-Channel (continued)

1

D = 0.5

0.5

0.2

0.1

0.05

0.02

0.01

0.005

r(t), NORMALIZED EFFECTIVE

0.002

TRANSIENT THERMAL RESISTANCE

0.001

0.2

0.1

0.05

0.02

0.01
Single Pulse

0.0001 0.001 0.01 0.1 1 10 100 300

Figure 21. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in note 1.

Transient thermalresponse will change depending on the circuit board design.

t , TIME (sec)

1

R (t) = r(t) * R

JA

θ

R =

JA

θ

P(pk)

t

1

t

T - T = P * R (t)

J

A

Duty Cycle, D = t /t

JA

θ

°C/W

135

2

JA

θ

1 2

FDS8928A Rev. B

SO-8 Tape and Reel Data and Package Dimensions

SOIC(8lds) Packaging
Configuration: Figure 1.0

ELECTROSTATIC

SENSITIVE DEVICES

DO NOT SHIP OR STORE NEAR STRONG ELECTROSTATIC
ELECTROMAGNETIC, MAGNETIC OR RADIOACTIVE FIELDS

TNR DATE
PT NUMBER
PEEL STRENGTH MIN ______________gms

Customized
Label

Packaging Option
Packaging type

Qty per Reel/Tube/Bag
Reel Size
Box Dimension (mm)
Max qty per Box
Weight per unit (gm)
Weight per Reel (kg)

Note/Comments

MAX _____________ gms

ESD Label

SOIC (8lds) Packaging Information

Standard

(no flow code)

2,500 95 4,000

13" Dia

343x64x343 530x130x83 343x64x343

5,000 30,000 8,000

0.0774 0.0774 0.0774 0.0774

0.6060 - 0.9696 0.1182

TNR

L86Z F011

Rail/Tube-TNR

13" Dia

Embossed Car rier Tape

Antistatic Cover Tape

Static Dissipative

F63TNR
Label

D84Z

TNR

500

7" Dia

184x18 7x47

1,000

F

NDS

9959

852

9959

SOIC-8 Unit Orientation

343mm x 342mm x 64mm
Stand a r d In t e rm ed iate box

Packaging Description:

SOIC-8 parts are shipped in tape. The carrier tape is
made from a dissipative (carbon filled) polycarbonate
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primarily composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
2,500 uni t s pe r 13" o r 33 0c m d ia met er reel . Th e reel s ar e
dark blue in color and is made of polystyrene plastic (anti­static coated). Other option comes in 500 units per 7" or
177cm di ameter reel. This and some o ther options are
further described in the Packaging Information table.

These full reels are individually barcode labeled and
placed inside a standard intermediate box (illustrated in
figure 1.0) made of recyclable corrugated brown paper.
One box contains two reels maximum. And these boxes
are placed inside a barcode labeled shipping box which
comes in di ff ere nt siz es depe nd in g on th e num be r of pa rts
shippe d.

F

NDS

9959

F

NDS

9959

F

NDS

852

852

852

F

NDS
9959

852

Pin 1

F63TNR Label sample

LOT: CBVK741B019

FSID: FDS9953A

D/C1: D9842 QTY1: SPEC REV:
D/C2: QTY2: CPN:

QTY: 2500

SPEC:

N/F: F (F63TNR)3

SOIC(8lds) Tape Leader and Trailer
Configuration: Figure 2.0

Carrier Tape

Cover Tape

Trailer Tape
640mm minimum or
80 empty pockets

F63TNLab el

ESD Label

Components

ESD Label

F63TNLabel

Leader Tape
1680mm minimum or
210 empty pockets

July 1999, Rev. B

SO-8 Tape and Reel Data and Package Dimensions, continued

SOIC(8lds) Embossed Carrier Tape
Configuration: Figure 3.0

T

K0

Wc

B0

P0

D0

E1

F

W

E2

Tc

A0

D1

P1

User Direction of Feed

Dimensions are in millimeter

Pkg type

(8lds)

SOIC

(12mm)

Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481

SOIC(8lds) Reel Configuration: Figure 4.0

A0 B0 W D0 D1 E1 E2 F P1 P0 K0 T Wc Tc

6.50

5.30

12.0

1.55

1.60

1.75

+/-0.10

+/-0.10

+/-0.3

+/-0.05

+/-0.10

+/-0.10

10.25
min

rotational and lateral movement requirements (see sketches A, B, and C).

B0

20 deg maximum component rotation

Sketch A (Side or Front Sectional View)

Component Rotation

W1 Measured at Hub

A0

Sketch B (Top View)

Component Rotation

5.50
+/-0.05

20 deg maximum

8.0
+/-0.1

Typical
component
cavity
center line

Typical
component
center line

Dim A

Max

4.0
+/-0.1

0.450

2.1
+/-0.10

0.5mm
maximum

Sketch C (Top View)

Component lateral movement

+/-

0.150

9.2
+/-0.3

0.5mm
maximum

0.06
+/-0.02

Dim A

max

Tape Size

12mm 7" Dia

12mm 13" Dia

 1998 Fairchild Semiconductor Corporation

Reel

Option

Dim N

Diameter Option

7"

See detail AA

B Min

Dim C

13" Diameter Option

See detail AA

W2 max Measured at Hub

Dim D

W3

min

DETAIL AA

Dimensions are in inches and millimeters

Dim A Dim B Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL)

7.00

0.059

177.8

13.00
330

1.5

0.059

1.5

512 +0.020/-0.008
13 +0.5/-0.2

512 +0.020/-0.008
13 +0.5/-0.2

0.795

2.165550.488 +0.078/-0.000

20.2

0.795

7.00

20.2

178

12.4 +2/0

0.488 +0.078/-0.000

12.4 +2/0

0.724

18.4

0.724

18.4

0.469 – 0.606

11.9 – 15.4

0.469 – 0.606

11.9 – 15.4

July 1999, Rev. B

SO-8 Tape and Reel Data and Package Dimensions, continued

SOIC-8 (FS PKG Code S1)

1 : 1

Scale 1:1 on letter size paper

Dimensions s hown below are in:

inches [millimeters]

Part Weight per unit (gram): 0.0774

9

September 1998, Rev. A

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not intended to be an exhaustive list of all such trademarks.

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2

CMOS

E

TM

FACT™
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®

FAST
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ISOPLANAR™
MICROWIRE™
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PowerTrench™
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PRODUCT STA TUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

Formative or
In Design

First Production

Full Production

Not In Production

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.