Datasheet FDS6670A Datasheet (Fairchild)

FDS6670A

G

FDS6
6

70

A

Single N-Channel, Logic Level, PowerTrench MOSFET

June 2003

General Description

This N-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor’s advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.

These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.

D

D

D

D

D

D

D

D

SO-8

Pin 1

SO-8

S

Absolute Maximum Ratings T

G

S

S

S

S

S

=25oC unless otherwise noted

A

Features

• 13 A, 30 V. R
R

• Fast switching speed

• Low gate charge

• High performance trench technology for extremely

low R

DS(ON)

• High power and current handling capability

5
6
7
8

= 8 mΩ @ VGS = 10 V

DS(ON)

= 10 mΩ @ VGS = 4.5 V

DS(ON)

4
3
2
1

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

P

D

TJ, T

STG

Drain-Source Voltage 30 V
Gate-Source Voltage
Drain Current – Continuous (Note 1a) 13 A

– Pulsed 50

Power Dissipation for Single Operation (Note 1a) 2.5

(Note 1b)

Operating and Storage Junction Temperature Range –55 to +150

±20

1.0

V

W

°C

Thermal Characteristics

R

θJA

R

θJA

R

θJC

Thermal Resistance, Junction-to-Ambient (Note 1a) 50
Thermal Resistance, Junction-to-Ambient (Note 1b) 125
Thermal Resistance, Junction-to-Case (Note 1) 25

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDS6670A FDS6670A 13’’ 12mm 2500 units

2003 Fairchild Semiconductor Corporation

°C/W

FDS6670A Rev F (W)

Electrical Characteristics T

FDS6670A

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics

BV

DSS

∆BVDSS
∆T

J

I

DSS

I

GSS

Drain–Source Breakdown Voltage
Breakdown Voltage Temperature

Coefficient

VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C

30 V

26

Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1

VDS = 24 V, VGS = 0 V, TJ=55°C

Gate–Body Leakage

VGS = ±20 V, VDS = 0 V ±100

mV/°C

10

On Characteristics (Note 2)

V

GS(th)

∆VGS(th)
∆T

J

R

DS(on)

I

D(on)

g

FS

Gate Threshold Voltage
Gate Threshold Voltage

Temperature Coefficient
Static Drain–Source

On–Resistance

VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25°C

VGS = 10 V, ID = 13 A
VGS = 4.5 V, ID = 10.5 A
VGS= 10 V, ID = 13 A, TJ=125°C

1 1.8 3 V

–5.3

6

7.2

8.5

10
14

mV/°C

8

mΩ

On–State Drain Current VGS = 10 V, VDS = 5 V 50 A
Forward Transconductance VDS = 15 V, ID = 13 A 55 S

Dynamic Characteristics

C

iss

C

oss

C

rss

R

G

Input Capacitance 2220 pF
Output Capacitance 535 pF
Reverse Transfer Capacitance

VDS = 15 V, V
f = 1.0 MHz

GS

= 0 V,

200 pF

Gate Resistance VGS = 15 mV, f = 1.0 MHz 1.7

Switching Characteristics (Note 2)

t
t
t
t
Q
Q
Q

d(on)

r

d(off)

f

g

gs

gd

Turn–On Delay Time 11 19 ns
Turn–On Rise Time 13 24 ns

VDD = 10 V, ID = 1 A,
VGS = 10 V, R

GEN

= 6 Ω

Turn–Off Delay Time 40 64 ns
Turn–Off Fall Time
Total Gate Charge 21 30 nC
Gate–Source Charge 6 nC

VDS = 15 V, ID = 13 A,
VGS = 5 V

Gate–Drain Charge

13 24 ns

7 nC

Drain–Source Diode Characteristics and Maximum Ratings

I

S

V

SD

t

rr

Q

rr

Notes:

1. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

θJA

the drain pins. R

Maximum Continuous Drain–Source Diode Forward Current 2.1 A
Drain–Source Diode Forward

Voltage
Diode Reverse Recovery Time 31 nS

Diode Reverse Recovery Charge

is guaranteed by design while R

θJC

is determined by the user's board design.

θCA

VGS = 0 V, IS = 2.1 A (Note 2) 0.7 1.2 V

IF = 13 A, diF/dt = 100 A/µs

21 nC

µA
µA

nA

Ω

2 Test: Pulse Width < 300µs, Duty Cycle < 2.0%

a) 50°C/W when mounted

on a 1in2 pad of 2 oz
copper

b) 125°C/W when mounted on a

minimum pad.

Scale 1 : 1 on letter size paper

FDS6670A Rev F (W)

Typical Characteristics

DRAIN-SOURCE ON-RESISTANCE

, DRAIN CURRENT (A)

FDS6670A

50

VGS = 10V

40

4.5V

30

20

, DRAIN CURRENT (A)

D

I

10

0

0 0.5 1 1.5

4.0V

VDS, DRAIN-SOURCE VOLTAGE (V)

3.5V

3.0V

1.8

1.6
VGS = 3.5V

1.4

, NORMALIZED

1.2

DS(ON)

R

1

0.8

0 10 20 30 40 50

4.0V

4.5V

ID, DRAIN CURRENT (A)

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.6

ID = 13A

VGS = 10V

1.4

1.2

, NORMALIZED

1

DS(ON)

R

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE (oC)

0.025

0.02

0.015

, ON-RESISTANCE (OHM)

0.01

DS(ON)

R

TA = 25oC

0.005
2 4 6 8 10

TA = 125oC

VGS, GATE TO SOURCE VOLTAGE (V)

5.0V
10V

ID = 6.5A

Figure 3. On-Resistance Variation with

Temperature.

50

VDS = 5V

40

30

TA =125oC

20

D

I

10

0

2 2.25 2.5 2.75 3 3.25 3.5

VGS, GATE TO SOURCE VOLTAGE (V)

25oC

-55oC

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

100

VGS = 0V

10

1

0.1

0.01

0.001

, REVERSE DRAIN CURRENT (A)

S

I

0.0001
0 0.2 0.4 0.6 0.8 1 1.2

TA = 125oC

25oC

-55oC

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDS6670A Rev F (W)

Typical Characteristics

CAPACITANCE (pF)

r(t), NORMALIZED EFFECTIVE TRANSIENT

0.2

FDS6670A

10

ID = 13A

8

6

4

, GATE-SOURCE VOLTAGE (V)

2

GS

V

0

0 10 20 30 40 50

VDS = 10V

20V

Qg, GATE CHARGE (nC)

15V

3000

2500

2000

1500

1000

500

C

rss

0

0 5 10 15 20 25 30

C

oss

VDS, DRAIN TO SOURCE VOLTAGE (V)

C

iss

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

100

R

LIMIT

DS(ON)

10

1

, DRAIN CURRENT (A)

D

I

VGS = 10V

SINGLE PULSE

0.1

R

= 125oC/W

θ

JA

TA = 25oC

0.01

0.01 0.1 1 10 100

VDS, DRAIN-SOURCE VOLTAGE (V)

100ms

1s

10s

DC

10ms

100µs

1m

80

60

40

20

P(pk), PEAK TRANSIENT POWER (W)

0

0.001 0.01 0.1 1 10 100 1000

t1, TIME (sec)

f = 1MHz
VGS = 0 V

SINGLE PULSE
R

= 125°C/W

θ

JA

TA = 25°C

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

1

D = 0.5

0.1

0.1

0.05

0.01

THERMAL RESISTANCE

0.02

0.01

SINGLE PULSE

R

(t) = r(t) * R

θJA

R

= 125 °C/W

θ

JA

P(pk)

t

1

t

2

TJ - TA = P * R

Duty Cycle, D = t1 / t

0.001

0.0001 0.001 0.01 0.1 1 10 100 1000

t1, TIME (sec)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.

θJA

(t)

θ

JA

2

FDS6670A Rev F (W)

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx™
ActiveArray™
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DOME™
EcoSPARK™
E2CMOS
EnSigna

TM

TM

FACT™

FACT Quiet Series™



FAST
FASTr™
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GTO™
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I2C™
ImpliedDisconnect™
ISOPLANAR™

Across the board. Around the world.™
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ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT

CONVEY ANY LICENSE UNDER ITS PA TENT RIGHTS, NOR THE RIGHTS OF OTHERS.

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

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

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

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

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As used herein:

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systems which, (a) are intended for surgical implant into
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failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
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PRODUCT STA TUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Formative or
In Design

First Production

Full Production

2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or

effectiveness.

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. I5