Datasheet FDS4897AC Datasheet (Fairchild)

FDS4897AC

Dual N & P-Channel PowerTrench® MOSFET

N-Channel: 40 V, 6.1 A, 26 mΩ P-Channel: -40 V, -5.2 A, 39 mΩ

FDS4897AC Dual N & P-Channel PowerTrench

October 2008

Features

Q1: N-Channel

 Max r  Max r

Q2: P-Channel

 Max r  Max r  100% UIL Tested  RoHS Compliant

= 26 mΩ at VGS = 10 V, ID = 6.1 A

DS(on)

= 31 mΩ at VGS = 4.5 V, ID = 5.6 A

DS(on)

= 39 mΩ at VGS = -10 V, ID = -5.2 A

DS(on)

= 65 mΩ at VGS = -4.5 V, ID = -4.1 A

DS(on)

D1

Pin 1

D2

SO-8

S1

G1

S2

G2

General Description

These dual N- and P-Channel MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance

.

®

process

Applications

 Inverter  Power Supplies

D2

D1

5

6

7

8

Q2

Q1Q2Q1

G2

4

S2

3

2

G1

S1

1

®

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Q1 Q2 Units

V

DS

V

GS

I

D

P

D

E

AS

, T

T

J

STG

Drain to Source Voltage 40 -40 V Gate to Source Voltage ±20 ±20 V Drain Current - Continuous 6.1 -5.2

- Pulsed 24 -24 Power Dissipation for Dual Operation 2.0

T Single Pulse Avalanche Energy (Note 3) 37 73 mJ Operating and Storage Junction Temperature Range -55 to +150 °C

= 25 °C unless otherwise noted

A

= 25 °C (Note 1a) 1.6

A

= 25 °C (Note 1b) 0.9

A

WPower Dissipation for Single Operation T

Thermal Characteristics

R

θJC

R

θJC

Thermal Resistance, Junction to Case, (Note 1) 40 Thermal Resistance, Junction to Ambient, (Note 1a) 78

°C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDS4897AC FDS4897AC SO-8 13 ” 12 mm 2500 units

FDS4897AC Dual N & P-Channel PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Type Min Typ Max Units

Off Characteristics

BV

∆BV ∆T

I

DSS

I

GSS

DSS

Drain to Source Breakdown Voltage Breakdown Voltage Temperature

DSS

Coefficient

J

Zero Gate Voltage Drain Current

Gate to Source Leakage Current VGS = ±20 V, V

= 250 µA, VGS = 0 V

D

I

= -250 µA, VGS = 0 V

D

ID = 250 µA, referenced to 25 °C I

= -250 µA, referenced to 25 °C

D

V

= 32 V, V

DS

V

= -32 V, V

DS

GS GS

DS

= 0 V = 0 V

= 0 V

Q1Q240

-40

Q1 Q2

V

37

-32

±100 ±100nAnA

mV/°C

1

-1

I

On Characteristics

V

GS(th)

∆V ∆T

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

Forward Transconductance

= VDS, ID = 250 µA

GS

V

= VDS, ID = -250 µA

GS

ID = 250 µA, referenced to 25 °C I

= -250 µA, referenced to 25 °C

D

= 10 V, ID = 6.1 A

V

GS

V

= 4.5 V, ID = 5.6 A

GS

V

= 10 V, ID = 6.1 A, TJ = 125 °C

GS

V

= -10 V, ID = -5.2 A

GS

V

= -4.5 V, ID = -4.1 A

GS

V

= -10 V , ID = -5.2 A, TJ = 125 °C

GS

V

= 5 V, ID = 6.1 A

DD

V

= -5 V, ID = -5.2 A

DD

Q1Q21.5

-1.5

Q1 Q2

Q1

Q2

Q1 Q2

2.0

-2.0

-6 6

20 24 30

28 45 41

24 14

3.0

-3.0 mV/°C

26 31 39

39 65 57

µA

V

mΩ

S

®

MOSFET

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g(TOT)

Q

gs

Q

gd

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

Gate to Source Charge

Gate to Drain “Miller” Charge

795

Q1

= 20 V, VGS = 0 V, f = 1 MHZ

V

DS

Q2

= -20 V, VGS = 0 V, f = 1 MHZ

V

DS

Q1 Q2

1055

765

1015

95

130

135

180

6580100

120

1.7

3.6

pF

Ω

6

17 17

15 15

12 15

10 10

30 30

10 10

21 20

ns

nC

8 2

3

2 3

nC

Q1 V

= 20 V, ID = 6.1 A,

DD

V

= 10 V, R

GS

GEN

= 6 Ω

Q2

= -20 V, ID = -5.2 A,

V

DD

V

= -10 V, R

GS

GEN

= 6 Ω

Q1 V

= 10 V, VDD = 20 V, ID = 6.1 A

GS

Q2

= -10 V, VDD = -20 V, ID = -5.2 A

V

GS

Q1 Q2

2.5

2.6

2.9

3.2

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Type Min Typ Max Units

Drain-Source Diode Characteristics

V

= 0 V, IS = 1.3 A (Note 2)

V

SD

t

rr

Q

Notes:

1: R

Source to Drain Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

rr

is determined with the device mo unted on a 1i n2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

θJA

the user's board design.

GS

V

= 0 V, IS = -1.3 A (Note 2)Q1Q2

GS

Q1 I

= 6.1 A, di/dt = 100 A/s

F

Q2 I

= -5.2 A, di/dt = 100 A/s

F

0.75

-0.76

Q1 Q2

is guaranteed by design whil e R

θJC

17 20

10

1.2

-1.2 31

36

7

15

nC

20

is determined by

θCA

FDS4897AC Dual N & P-Channel PowerTrench

V

ns

a) 78 °C/W when mounted on a 1 in2 pad of 2 oz copper

2: Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%. 3: Starting TJ = 25 °C, N-ch: L = 3 mH, IAS = 5 A, VDD = 40 V, VGS = 10 V; P-ch: L = 3 mH, IAS = -7 A, VDD = -40 V, VGS = -10 V.

b) 135 °C/W when mounted on a minimun pad

®

MOSFET

FDS4897AC Dual N & P-Channel PowerTrench

Typical Characteristics (Q1 N-Channel) T

24

20

16

VGS = 4 V

12

8

DRAIN CURRENT (A)

,

D

I

4

0

0.0 0.5 1.0 1.5 2.0

V

,

DRAIN TO SOURCE VOLTAGE (V)

DS

Figure 1.

1.8

ID = 6.1 A V

GS

1.6

On Region Characteristics Figure 2.

= 10 V

1.4

1.2

1.0

NORMALIZED

0.8

DRAIN TO SOURCE ON-RESISTANCE

0.6

-75 -50 -25 0 25 50 75 100 125 150

T

,

JUNCTION TEMPERATURE

J

VGS = 10 V

VGS = 4.5 V

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

o

(

C

)

VGS = 3.5 V

VGS = 3 V

= 25 °C unless otherwise noted

J

5

VGS = 3 V

4

3

2

NORMALIZED

1

DRAIN TO SOURCE ON-RESISTANCE

0.5 0 4 8 12162024

I

,

D

Norm a l i z e d O n -Resista n c e

vs Drain Current and Gate Voltage

80

)

Ω

70

m

(

60

50

DRAIN TO

,

40

DS(on)

r

30

20

SOURCE ON-RESISTANCE

10

246810

V

,

GATE TO SOURCE VOLTAGE (V)

GS

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

V

GS

DRAIN CURRENT (A)

PULSE DURA TION = 80 µs DUTY CYCLE = 0.5% MAX

ID = 6.1 A

TJ = 125 oC

TJ = 25 oC

= 4 V

VGS = 3.5 V

VGS = 4.5 V

V

= 10 V

GS

®

MOSFET

Fi g ure 3 . Nor m aliz ed On R esis tanc e

vs Junction Temperature

24

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

20

V

= 5 V

DS

16

12

TJ = 150 oC

8

, DRAIN CURRENT (A)

D

I

4

0

1234

VGS, GATE TO SOURCE VOLTAGE (V)

TJ = 25 oC

TJ = -55 oC

Figure 5. Transfer Characteristics

Figure 4.

On-Resistance vs Ga te to

Source Voltage

40

V

= 0 V

GS

10

1

0.1

0.01

, REVERSE DRAIN CURRENT (A)

S

I

0.001

0.0 0.2 0.4 0.6 0.8 1.0 1.2

Figure 6.

TJ = 150 oC

TJ = -55 oC

VSD, BODY DIODE FORWARD VOLTAGE (V)

Source to Drain Diode

TJ = 25 oC

Forward Voltage vs Source Current

FDS4897AC Dual N & P-Channel PowerTrench

Typical Characteristics (Q1 N-Channel) T

10

ID = 6.1 A

8

6

4

VDD = 20 V

2

, GATE TO SOURCE VOLTAGE (V)

GS

V

0

0481216

Figure 7.

10

9 8 7

Gate Charge Characteristics Figure 8.

6 5

4 3

2

, AVALANCHE CURRENT (A)

AS

I

1

0.01 0.1 1 10 20

tAV, TIME IN AVALA NCHE (ms)

V

= 15 V

DD

VDD = 25 V

Qg, GATE CHARGE (nC)

TJ = 125 oC

TJ = 25 oC

= 25 °C unless otherwise noted

J

2000 1000

100

CAPACITANCE (pF)

f = 1 MHz

= 0 V

V

GS

10

0.1 1 10 4 0

VDS, DRAIN TO SOURCE VOLTAGE (V)

Capacitance vs Drain

to Source Voltage

7

6

5

4

3

DRAIN CURRENT (A)

2

,

D

I

1

R

= 78 oC/W

θ

JA

0

25 50 75 100 125 150

V

T

,

AMBIENT TEMPERATURE

C

GS

= 4.5 V

C

iss

C

oss

C

rss

®

MOSFET

V

= 10 V

GS

o

(

C

)

Figure 9.

30 10

1

0.1

, DRAIN CURRENT (A)

D

I

0.01

0.01 0.1 1 10 100

Figure 11. Forward Bias Safe

Unc l a m p e d I ndu c t i v e

Switching Capability

THIS AREA IS LIMITED BY r

DS(on)

SINGLE PULSE

= MAX RATED

T

J

R

= 135 oC/W

θ

JA

= 25 oC

T

A

VDS, DRAIN to SOURCE VOLTAGE (V)

Operating Area

100 us

1 ms 10 ms

100 ms

1 s 10 s

DC

200

Figure 10.

Ma ximum Con tinuous D rai n

Current vs Ambient Temperature

1000

VGS = 10 V

100

10

PEAK TRANSIENT POWER (W)

,

)

1

PK

(

P

0.5 10-410-310-210

t, PULSE WIDTH (sec)

Figure 12.

Sing le Pulse Ma ximum

-1

Power Dissipation

SINGLE PULSE R

T

110

= 135 oC/W

θ

JA

= 25 oC

A

100 1000

FDS4897AC Dual N & P-Channel PowerTrench

Typical Characteristics (Q1 N-Channel) T

2

DUTY CYCLE-DESCENDING ORDER

1

D = 0.5

JA

θ

Z

0.1

IMPEDANCE,

0.01

NORMALIZED THERMAL

0.001

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

= 135 oC/W

R

θ

JA

(

Note 1b

)

-4

10

-3

10

Figure 13.

-2

10

t, RECTANGULAR PULSE DURATION (sec)

Junction-to-Ambient Transient Thermal Response Curve

= 25 °C unless otherwise noted

J

NOTES: DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-1

110

P

DM

t

1

t

2

1/t2

x R

+ T

θJA

A

100 1000

®

MOSFET

FDS4897AC Dual N & P-Channel PowerTrench

Typical Characteristics (Q2 P-Channel) T

24

20

16

12

8

DRAIN CURRENT (A)

,

D

-I

4

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

VGS = -4.5 V

-V

,

DRAIN TO SOURCE VOLTAGE (V)

DS

Figure 15. On- Region Characteristics Figure 16. Normalized on-Resistance vs Drain

1.8

ID = -5.2 A V

= -10 V

1.6

1.4

1.2

1.0

NORMALIZED

0.8

DRAIN TO SOURCE ON-RESISTANCE

0.6

-75 -50 -25 0 25 50 75 100 125 150

GS

T

,

JUNCTION TEMPERATURE

J

VGS = -10 V

VGS = -5 V

VGS = - 4 V

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

VGS = -3.5 V

o

(

C

)

= 25 °C unless otherwise noted

J

5

4

VGS = -3.5 V

3

2

NORMALIZED

1

DRAIN TO SOURCE ON-RESISTANCE

0.5 04812162024

-

I

D

Current and Gate Voltage

120

)

Ω

100

m

(

80

DRAIN TO

,

60

DS(on)

r

40

SOURCE ON-RESISTANCE

20

246810

-VGS, GATE TO SO URCE VOLT AGE (V)

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

,

DRAIN CURRENT (A)

ID = -5.2 A

T

J

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

= 25 oC

VGS = -4 V

TJ = 125 oC

VGS = -4.5 V

VGS = -5 V

V

= -10 V

GS

®

MOSFET

Figure 17. Normalized On-Resistance

vs Junction Temperature

24

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

20

V

= -5 V

DS

16

12

TJ = 150 oC

Figure 18. On-Resistance vs Gate to

Source Voltage

40

V

= 0 V

GS

10

1

0.1

TJ = 150 oC

TJ = 25 oC

8

, DRAIN CURRENT (A)

D

-I

4

0

12345

TJ = 25 oC

-VGS, GATE TO SOURCE VOLTAGE (V)

TJ = -55 oC

0.01

, REVERSE DRAIN CURRENT (A)

S

-I

0.001

0.0 0.2 0.4 0.6 0.8 1.0 1.2

-VSD, BODY DIODE FORWARD VOLTAGE (V)

TJ = -55 oC

Figure 19. Transfer Characteristics Figure 20. Source to Drain Diode

Forward Voltage vs Source Current

FDS4897AC Dual N & P-Channel PowerTrench

Typical Characteristics (Q2 P-Channel) T

10

ID = -5.2 A

8

V

= -15 V

DD

6

4

VDD = -20 V

2

, GATE TO SOURCE VOLTAGE (V)

GS

-V

0

0481216

Qg, GATE CHARGE (nC)

Figure 21. Gate Charge Characteristics

10

9 8 7

6 5

4 3

2

, AVALANCHE CURRENT (A)

AS

I

-

1

0.1 1 10 40

tAV, TIME IN AVALANCHE (ms)

VDD = -25 V

TJ = 25 oC

TJ = 125 oC

= 25 °C unless otherwise noted

J

2000 1000

100

CAPACITANCE (pF)

f = 1 MHz

= 0 V

V

GS

10

0.1 1 10 40

-VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 22. Capacitance vs Drain

to Source Volt age

6

5

4

3

2

DRAIN CURRENT (A)

,

D

-I

1

R

= 78 oC/W

θ

JA

0

25 50 75 100 125 150

T

,

AMBIENT TEMPERATURE

C

V

GS

= -4.5 V

C

iss

C

oss

C

rss

®

MOSFET

V

= -10 V

GS

o

(

C

)

Figure 23. Unclamped Inductive

Switching Capability

30

100 us

Fig u r e 24. Ma x i mum Co n t inuous D r ain

Current vs Ambient Temperature

1000

VGS = -10 V

10

100

SINGLE PULSE R

= 135 oC/W

θ

JA

10

, PEAK TRANSIENT POWER (W)

)

1

PK

(

P

0.5 10-410-310-210

-1

t, PULSE WIDTH (sec)

110

Figure 26. Single Pulse Maximum Power

Dissipation

100 1000

THIS AREA IS

1

LIMITED BY r

, DRAIN CURRENT (A)

0.1

D

-I

0.01

0.01 0.1 1 10 100

ds(on)

SINGLE PULSE T

= MAX RATED

J

R

= 135 oC/W

θ

JA

o

T

=

25

C

A

-VDS, DRAIN to SOURCE VOLTAGE (V)

Figure 25. Forward Bias Safe

Operating Area

1 ms 10 ms 100 ms

1 s 10 s

DC

200

FDS4897AC Dual N & P-Channel PowerTrench

Typical Characteristics (Q2 P-Channel) T

2

DUTY CYCLE-DESCENDING ORDER

1

D = 0.5

JA

θ

Z

0.1

IMPEDANCE,

0.01

NORMALIZED THERMAL

0.001

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

= 135 oC/W

R

θ

JA

(

Note 1b

)

-4

10

-3

10

-2

10

t, RECTANGULAR PULSE DURATION (sec)

Figure 27. Junction-to-Ambient Transient Thermal Response Curve

= 25 °C unless otherwise noted

J

NOTES: DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-1

110

P

DM

t

1

t

2

1/t2

x R

+ T

θJA

A

100 1000

®

MOSFET

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tm

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FDS4897AC Dual N & P-Channel PowerTrench

®

MOSFET

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.

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Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for pro duct development. S pecificatio ns may change in any manner without notice.

Datasheet contains preliminary data; supplementary dat a will be pu blished at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

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Rev. I37