Datasheet 3SK295 Datasheet (HIT)

Silicon N-Channel Dual Gate MOS FET

Application

UHF RF amplifier

Features

• Low noise figure.

NF = 2.0 dB typ. at f = 900 MHz

• Capable of low voltage operation

Outline

3SK295

ADE-208-387

1st. Edition

MPAK-4

2

3

1

4

1. Source

2. Gate1

3. Gate2

4. Drain

3SK295

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate 1 to source voltage V
Gate 2 to source voltage V
Drain current I

DS

G1S

G2S

D

Channel power dissipation Pch 150 mW
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Attention: This device is very sensitive to electro static discharge.

It is recommended to adopt appropriate cautions when handling this transistor.

12 V

±8V
±8V

25 mA

2

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Drain to source breakdown

V

(BR)DSX

voltage
Gate 1 to source breakdown

V

(BR)G1SS

voltage
Gate 2 to source breakdown

V

(BR) G2SS

voltage
Gate 1 cutoff current I
Gate 2 cutoff current I
Drain current I

Gate 1 to source cutoff voltage V

Gate 2 to source cutoff voltage V

G1SS

G2SS

DS(on)

G1S(off)

G2S(off)

Forward transfer admittance |yfs| 16 20.8 — mS V

Input capacitance Ciss 1.2 1.5 2.2 pF V

Output capacitance Coss 0.6 0.9 1.2 pF
Reverse transfer capacitance Crss — 0.01 0.03 pF
Power gain PG 16 19.5 — dB V

Noise figure NF — 2.0 3 dB
Note: Marking is “ZQ–”

12 — — V ID = 200 µA , V

V

= –3 V

G2S

±8— —V IG1 = ±10 µA, V

±8— —V IG2 = ±10 µA, V

——±100 nA V
——±100 nA V

0.5 — 10 mA V

–0.5 — +0.5 V V

0 — +1.0 V V

= ±6 V, V

G1S

= ±6 V, V

G2S

= 6 V, V

DS

V

= 3 V

G2S

= 10 V, V

DS

I

= 100 µA

D

= 10 V, V

DS

I

= 100 µA

D

= 6 V, V

DS

I

= 10 mA, f = 1 kHz

D

= 6 V, V

DS

I

= 10 mA, f = 1 MHz

D

= 4 V, V

DS

I

= 10 mA, f = 900 MHz

D

G1S

G2S

G1S

G2S

G2S

G2S

G2S

G1S

= 0.5V,

= 3V,

= 3V,

= 3V,

3SK295

= –3 V,

G1S

= VDS = 0

G2S

= VDS = 0

G1S

= VDS = 0
= VDS = 0

= 3V,

= 3V,

3

3SK295

Maximum Channel Power

Dissipation Curve

200

150

100

50

Channel Power Dissipation Pch (mW)

0 50 100 150 200

Ambient Temperature Ta (°C)

Drain Current vs. Gate1 to Source Voltage

20

16

3.0 V

2.5 V

2.0 V

V = 6 V

DS

Pulse test

Typical Output Characteristics

20

V = 3 V

G2S

1.2 V

Pulse test

16

1.0 V

D

12

0.8 V

8

0.6 V

4

Drain current I (mA)

V = 0.4 V

G1S

0246810

Drain to source voltage V (V)

DS

Drain Current vs. Gate2 to Source Voltage

20

16

2.0 V

1.5 V

V = 6 V

DS

Pulse test

1.5 V

D

12

8

1.0 V

4

Drain current I (mA)

V = 0.5 V

G2S

0

12345

Gate1 to source voltage V (V)

G1S

D

12

8

V = 0.5 V

4

Drain current I (mA)

0

12345

G1S

Gate2 to source voltage V (V)

1.0 V

G2S

4

3SK295

Forward Transfer Admittance vs.

Gate1 to Source Voltage

30

V = 6 V

DS

f = 1 kHz

fs

24

|y | (mS)

V = 3.0 V

18

12

6

1.0 V

0.5 V

Forward transfer admittance

0

0.4 0.8 1.2 1.6

Gate1 to source voltage V (V)

Noise Figure vs. Drain Current

5

4

G2S

2.0 V

1.5 V

V = 4 V

DS

V = 3 V

G2S

f = 900 MHz

G1S

2.5 V

2.0

Power Gain vs. Drain Current

25

20

15

10

Power gain PG (dB)

5

V = 4 V

DS

V = 3 V

G2S

f = 900 MHz

0

12 510

Drain current I (mA)

D

Power Gain vs. Drain to Source Voltage

25

20

20

3

2

Noise figure NF (dB)

1

0

12 510

Drain current I (mA)

D

20

15

10

Power gain PG (dB)

5

0

2468

Drain to source voltage V (V)

V = 3 V

G2S

I = 10 mA

D

f = 900 MHz

DS

10

5

3SK295

Noise Figure vs. Drain to Source Voltage

5

4

3

2

Noise figure NF (dB)

V = 3 V

1

0

2468

Drain to source voltage V (V)

G2S

I = 10 mA

D

f = 900 MHz

10

DS

6

3SK295

S11 Parameter vs. Frequency

1

.8

.6

.4

.2

0

–.2

.2

–.4

Condition:

.6

.4

–.6

1.0

.8

–.8

–1

V = 4 V , V = 3 V

DS

I = 10 mA , Zo = 50

D

100 to 1000 MHz (50 MHz step)

S12 Parameter vs. Frequency

120°

150°

180°

–150°

–120°

Condition:

100 to 1000 MHz (50 MHz step)

V = 4 V , V = 3 V
I = 10 mA , Zo = 50

–90°
DS

D

90°

1.5

1.5

234

–1.5

G2S

2

3

4

5

10

10

5

–10

–5

–4

–3

–2

Ω

Scale: 0.002/ div.

60°

30°

–30°

–60°

G2S

Ω

S21 Parameter vs. Frequency

Scale: 0.5 / div.

180°

150°

–150°

120°

–120°

Condition:

90°

–90°

V = 4 V , V = 3 V

DS

I = 10 mA , Zo = 50

D

60°

30°

0°

–30°

–60°

G2S

Ω

100 to 1000 MHz (50 MHz step)

S22 Parameter vs. Frequency

1

.8

.6

.4

.2

0°

0

–.2

.2

–.4

Condition:

.6

.4

.8

–.6

–.8

–1

V = 4 V , V = 3 V

DS

I = 10 mA , Zo = 50

D

100 to 1000 MHz (50 MHz step)

1.0

1.5

1.5

234

–1.5

G2S

2

3

4

5

10

10

5

–10

–5

–4

–3

–2

Ω

7

3SK295

S Parameter (VDS = 4 V, V

Freq. S11 S21 S12 S22
(MHz) MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG.

100 0.999 –6.1 1.98 172.2 0.00094 79.2 0.989 –4.2
150 0.998 –9.1 1.97 168.4 0.00189 80.4 0.987 –6.1
200 0.992 –11.9 1.96 165.0 0.00230 79.5 0.986 –7.9
250 0.988 –14.8 1.96 161.0 0.00286 79.9 0.984 –9.8
300 0.985 –17.9 1.94 157.1 0.00364 75.2 0.981 –11.5
350 0.976 –20.6 1.92 153.7 0.00353 71.8 0.978 –13.4
400 0.971 –23.2 1.91 149.9 0.00419 70.7 0.975 –15.2
450 0.964 –26.3 1.88 146.8 0.00495 65.5 0.972 –17.2
500 0.961 –29.1 1.87 142.8 0.00509 62.7 0.968 –19.1
550 0.951 –32.2 1.86 139.4 0.00530 66.6 0.963 –20.8
600 0.949 –35.0 1.86 136.1 0.00550 63.8 0.960 –22.8
650 0.935 –37.6 1.81 132.9 0.00601 58.2 0.956 –24.5
700 0.933 –40.5 1.78 129.4 0.00582 60.6 0.950 –26.3
750 0.923 –42.9 1.77 125.7 0.00572 58.5 0.945 –28.0
800 0.916 –45.8 1.75 122.6 0.00553 56.3 0.941 –29.9
850 0.908 –49.0 1.72 119.1 0.00514 56.3 0.936 –31.7
900 0.900 –51.2 1.70 115.8 0.00543 52.9 0.930 –33.4
950 0.890 –54.0 1.67 112.6 0.00506 52.4 0.924 –35.2
1000 0.876 –56.4 1.65 109.3 0.00469 51.9 0.919 –37.0

= 3 V, ID = 10 mA, ZO = 50 )

G2S

8

0.4

+ 0.1
– 0.05

2.95 ± 0.2

1.9 ± 0.2

0.95 0.95

0.4

+ 0.1

– 0.05

0.65

0.16

+ 0.1
– 0.06

Unit: mm

0.4

+ 0.1
– 0.05

0.95

1.8 ± 0.2

0.85

0.6

+ 0.1
– 0.05

0.3

+ 0.2

1.1

1.5 ± 0.15

0.65

– 0.1

+ 0.2

– 0.6

2.8

Hitachi Code
JEDEC
EIAJ
Weight

0 – 0.1

(reference value)

MPAK-4
—
Conforms

0.013 g

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