Datasheet 3SK194 Datasheet (HIT)

Silicon N-Channel Dual Gate MOS FET

Application

VHF/UHF TV tuner RF amplifier

Outline

MPAK-4

3SK194

2

3

1

4

1. Source

2. Gate1

3. Gate2

4. Drain

3SK194

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V Gate 1 to source voltage V Gate 2 to source voltage V Drain current I

DS

G1S

G2S

D

Channel power dissipation Pch 150 mW Channel temperature Tch 125 °C Storage temperature Tstg –55 to +125 °C

15 V

±10 V ±10 V

35 mA

2

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Drain to source breakdown

V

(BR)DSX

voltage Gate 1 to source breakdown

V

(BR)G1SS

voltage Gate 2 to source breakdown

V

(BR)G2SS

voltage Gate 1 cutoff current I Gate 2 cutoff current I Gate 1 to source cutoff voltage V

Gate 2 to source cutoff voltage V

Drain current I

G1SS

G2SS

G1S(off)

G2S(off)

DSS

Forward transfer admittance |yfs|17——mSV

Input capacitance Ciss — 2.8 3.5 pF V

Output capacitance Coss — 1.8 2.5 pF Reverse transfer capacitance Crss — 0.02 — pF Power gain PG 12 15 — dB V

Noise figure NF — 3.0 4.5 dB Noise figure NF — 3.0 4.0 dB V

Power gain PG 27 30 — dB V

Noise figure NF — 1.0 2.5 dB Note: Marking is “IY–”.

15 — — V ID = 200 µA,

V

= V

G1S

= –5 V

G2S

±10 — — V IG1 = ±10 µA, V

±10 — — V IG2 = ±10 µA, V

——±100 nA V ——±100 nA V — — –1.0 V V

— — –1.5 V V

0 — 10 mA V

= ±8 V, V

G1S

= ±8 V, V

G2S

= 10 V, V

DS

I

= 100 µA

D

= 10 V, V

DS

I

= 100 µA

D

= 6 V, V

DS

= 6 V, V

DS

I

= 10 mA, f = 1 kHz

D

= 6 V, V

DS

I

= 10 mA, f = 1 MHz

D

= 6 V, V

DS

I

= 10 mA, f = 900 MHz

D

= 12 V, V

DD

G2S

G1S

G2S

AGC

f = 60 MHz

= 6 V, V

DS

I

= 10 mA, f = 200 MHz

D

G2S

G1S

= 0, V = 3 V,

= 3 V,

3SK194

= VDS = 0

G2S

= VDS = 0

G1S

= VDS = 0 = VDS = 0

= 3 V,

G2S

= 10.5 V,

= 3 V

3

3SK194

Maximum Channel Power

Dissipation Curve

300

(mW)

ch

200

100

Channel Power Dissipation P

0

50 100 150

Ambient Temperature Ta (°C)

Drain Current vs. Gate 1 to

Source Voltage

20

16

(mA)

D

12

2

1.5

1

0.5

VDS = 6 V

Typical Output Characteristics

20

0.8

0.6

V

G2S

16

(mA)

D

12

8

Drain Current I

4

0.4

0.2

V

= 0

G1S

0 246 108

Drain to Source Voltage V

DS

Drain Current vs. Gate 2 to

Source Voltage

20

1.5

1

VDS = 6 V

16

(mA)

D

12

0.5

= 3 V

(V)

8

Drain Current I

4

0

01–1 2 43

Gate 1 to Source Voltage V

8

V

= 0 V

V

= 0 V

G2S

Drain Current I

4

G1S

0

01–1 2 43

G1S

(V)

Gate 2 to Source Voltage V

G2S

(V)

4

30

(mS)



fs

24

18

Forward Transfer Admittance vs.

Gate 1 to Source Voltage

VDS = 6 V

f = 1 kHz

50

40

(dB)

30

Power Gain vs. Drain Current

VDS = 6 V V

= 3 V

G2S

f = 200 MHz

3SK194

12

3

2.5

6

0

Forward Transfer Admittance y

V

G2S

= 0 V

01–1 2 43

2

1.5 1

0.5

Gate 1 to Source Voltage V

Power Gain vs. Drain Current

20

16

(dB)

12

8

Power Gain PG

4

04812 2016

Drain Current I

(mA)

D

(V)

G1S

VDS = 6 V

= 3 V

V

G2S

f = 900 MHz

20

Power Gain PG

10

04812 2016

Drain Current ID (mA)

Power Gain vs. Drain to Source Voltage

50

V I

40

(dB)

30

f = 200 MHz

20

Power Gain PG

10

04812 2016

Drain to Source Voltage V

= 3 V

G2S

= 10 mA

D

(V)

DS

5

3SK194

Power Gain vs. Drain to Source Voltage

20

16

(dB)

12

V I

D

f = 900 MHz

8

Power Gain PG

4

04812 2016

Drain to Source Voltage VDS (V)

Noise Figure vs. Drain Current

10

VDS = 6 V V f = 900 MHz

(dB)

8

6

= 3 V

G2S

= 10 mA

= 3 V

G2S

Noise Figure vs. Drain Current

5

VDS = 6 V V

4

(dB)

f = 200 MHz

3

2

Noise Figure NF

1

04812 2016

Drain Current I

(mA)

D

Noise Figure vs.

Drain to Source Voltage

5

V I

4

(dB)

f = 200 MHz

3

= 3 V

G2S

= 3 V

G2S

= 10 mA

D

4

Noise Figure NF

2

04812 2016

Drain Current ID (mA)

2

Noise Figure NF

1

04812 2016

Drain to Source Voltage V

DS

(V)

6

10

Drain to Source Voltage

8

(dB)

6

4

Noise Figure NF

2

Noise Figure vs.

V

= 3 V

G2S

I

= 10 mA

D

f = 900 MHz

3SK194

0

4 8 12 2016

Drain to Source Voltage V

DS

(V)

7

0.4

+ 0.1 – 0.05

2.95 ± 0.2

1.9 ± 0.2

0.95 0.95

0.4

+ 0.1

– 0.05

0.65

0.16

+ 0.1 – 0.06

Unit: mm

0.4

+ 0.1 – 0.05

0.95

1.8 ± 0.2

0.85

0.6

+ 0.1 – 0.05

0.3

+ 0.2

1.1

1.5 ± 0.15

0.65

– 0.1

+ 0.2

– 0.6

2.8

Hitachi Code JEDEC EIAJ Weight

0 – 0.1

(reference value)

MPAK-4 — Conforms

0.013 g

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products.

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