Page 1
Description
The 3SK165A is an N-channel dual gate GaAs
MES FET for UHF band low-noise amplification. This
FET is suitable for a wide range of applications
including cellular, cordless phone.
Features
• Low voltage operation
• Low noise: NF = 1.2dB (typ.) at 800MHz
• High gain: Ga = 20dB (typ) at 800MHz
• High stability
Application
UHF band amplifier, mixer and oscillator
Structure
GaAs N-channel dual-gate metal semiconductor field-effect transistor
Absolute Maximum Ratings (Ta = 25°C)
• Drain to source voltage VDSX 8V
•Gate 1 to source voltage VG1S –6 V
• Gate 2 to source voltage VG2S –6 V
• Drain current ID 80 mA
• Allowable power dissipation PD 150 mW
• Channel temperature Tch 150 °C
• Storage temperature Tstg –55 to +150 °C
– 1 –
3SK165A
E96Y12-PS
GaAs N-channel Dual Gate MES FET
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
For the availability of this product, please contact the sales office.
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3SK165A
Typical Characteristics (Ta = 25°C)
Electrical Characteristics (Ta = 25°C)
Item
Drain cut-off current
Gate 1 to source current
Gate 2 to source current
Drain saturation current
Gate 1 to source cut-off voltage
Gate 2 to source cut-off voltage
Forward transfer admittance
Input capacitance
Feedback capacitance
Noise figure
Associated gain
IDSX
IG1SS
IG2SS
IDSS
VG1S (OFF)
VG2S (OFF)
gm
Ciss
Crss
NF
Ga
VDS = 8V
VG1S = –4V
VG2S = 0V
VG1S = –4V
VG2S = 0V
VDS = 0V
VG2S = –4V
VG1S = 0V
VDS = 0V
VDS = 5V
VG1S = 0V
VG2S = 0V
VDS = 5V
ID = 100µA
VG2S = 0V
VDS = 5V
ID = 100µA
VG1S = 0V
VDS = 5V
ID = 10mA
VG2S = 1.5V
f = 1kHz
VDS = 5V
ID = 10mA
VG2S = 1.5V
f = 1MHz
VDS = 5V
ID = 10mA
VG2S = 1.5V
f = 800MHz
20
–1
–1
15
16
22
0.5
7.5
1.2
20
100
–20
–20
55
–4
–4
1.0
25
2.5
µA
µA
µA
mA
V
V
ms
pF
fF
dB
dB
Symbol Condition Min. Typ. Max. Unit
∗
IDSS classification
Product name classification
3SK165A-0
3SK165A-1
IDSS RANK
20 to 55mA
20 to 35mA
ID vs. VDS
50
(VG2S = 1.5V)
40
30
20
– Drain current [mA]
D
I
10
0
0 2 4 6 8
V
DS – Drain to source voltage [V]
VG1S
= 0V
–0.2V
–0.4V
–0.6V
–0.8V
–1.0V
–1.2V
–1.4V
–1.6V
–1.8V
ID vs. VG1S
50
(VDS = 5V)
40
30
20
– Drain current [mA]
D
I
10
0
–2.0 –1.5 –1.0 –0.5 0
V
G1S – Gate 1 to source voltage [V]
V
G2S
= 1.5V
1.0V
0.5V
0V
–0.5V
–1.0V
–1.5V
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3SK165A
–2.0 –1.5 –1.0 –0.5 0
0
20
30
40
50
V
G2S – Gate 2 to source voltage [V]
I
D
– Drain current [mA]
ID vs. VG2S
(VDS = 5V)
V
G1S
= 0V
–0.4V
–0.6V
–1.0V
–1.2V
–1.4V
–0.2V
–0.8V
10
–2.0 –1.5 –1.0 –0.5 0
0
20
30
40
50
V
G1S – Gate 1 to source voltage [V]
gm – Forward transfer admittance [ms]
gm vs. VG1S
(VDS = 5V)
V
G2S
= 1.5V
1.0V
0.5V
0V
–0.5V
10
–1.0V
0 0.8 1.6 2.2
0
1.0
1.5
2.5
3.0
f – Frequency [GHz]
NFmin – Minimum noise figure [dB]
NF, Ga vs. f
0.5
0.4 1.2 2.0
2.0
10
20
25
35
40
15
30
Ga – Gain [dB]
(VDS = 5V, VG2S = 1.5V, ID = 10mA)
Ga
NFmin
0.6 1.40.2 1.0 1.8
–2.0 –1.4 –1.0 –0.6 –0.2 0 0.2
0
2
3
4
6
V
G1S – Gate 1 to source voltage [V]
NF – Noise figure [dB]
NF vs. VG1S
(VDS = 5V, f = 800MHz)
1
–1.6 –1.2 –0.8 –0.4
5
–1.8
VG2S = 0.5V
1.0V
1.5V
0
10
15
25
30
V
G1S – Gate 1 to source voltage [V]
Ga – Gain [dB]
Ga vs. VG1S
5
20
VG2S = 1.5V
1.0V
0.5V
(VDS = 5V, f = 800MHz)
–2.0 –1.4 –1.0 –0.6 –0.2 0 0.2–1.6 –1.2 –0.8 –0.4–1.8
0 4 8 12 16 20 22
0
1.0
1.5
2.5
3.0
I
D – Drain current [mA]
NF – Noise figure [dB]
NF, Ga vs. ID
(VDS = 5V, VG2S = 1.5V, f = 800MHz)
0.5
2 6 10 14
2.0
18
0
10
15
25
30
5
20
Ga – Gain [dB]
Ga
NF
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3SK165A
S-parameter vs. Frequency Characteristics (VDS = 5V, VG2S = 1.5V, ID = 10mA) (Z0 = 50Ω)
f
(MHz)
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
0.970
0.968
0.965
0.963
0.961
0.958
0.958
0.958
0.958
0.958
0.954
0.953
0.950
0.949
0.947
0.947
0.946
0.945
0.942
0.941
–0.7
–1.6
–2.4
–3.2
–4.2
–4.9
–5.8
–6.7
–7.3
–8.3
–9.0
–9.6
–10.5
–11.2
–12.1
–12.9
–13.9
–14.5
–15.3
–15.9
S22
MAG ANG
0.001
0.002
0.004
0.004
0.005
0.006
0.007
0.007
0.008
0.008
0.009
0.010
0.011
0.011
0.011
0.011
0.012
0.012
0.013
0.013
73.3
91.6
80.5
85.0
84.9
84.7
83.2
82.5
82.0
78.1
84.4
76.7
77.8
80.9
80.0
80.5
74.3
79.2
80.6
79.5
S12
MAG ANG
2.110
2.105
2.097
2.094
2.083
2.070
2.058
2.048
2.039
2.021
2.008
1.990
1.973
1.954
1.941
1.928
1.901
1.888
1.865
1.846
176.7
173.0
169.7
166.4
162.7
159.5
156.1
152.8
149.4
146.0
142.8
139.6
136.3
133.3
130.0
126.8
123.7
120.6
117.3
114.1
S21
MAG ANG
0.999
0.998
0.991
0.984
0.980
0.970
0.964
0.956
0.949
0.938
0.927
0.911
0.898
0.882
0.868
0.856
0.838
0.824
0.809
0.792
–1.8
–3.7
–5.7
–7.8
–10.0
–12.2
–14.1
–16.1
–17.9
–19.7
–21.3
–22.8
–24.4
–25.8
–27.4
–29.0
–30.2
–31.5
–32.9
–34.1
S11
MAG ANG
Noise Figure Characteristics (VDS = 5V, VG2S = 1.5V, ID = 10mA)
f
(MHz)
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
4.4
6.4
8.2
9.9
11.4
12.8
14.2
15.5
16.7
17.9
19.1
20.3
21.5
22.8
24.2
25.6
27.1
28.8
30.6
63.7
63.0
62.2
61.5
60.7
59.9
59.1
58.4
57.6
56.8
56.0
55.2
54.3
53.5
52.7
51.9
51.0
50.2
49.3
MAG
Rn
(Ω)
0.72
0.75
0.81
0.84
0.90
0.94
0.98
1.02
1.07
1.13
1.17
1.22
1.26
1.31
1.38
1.42
1.48
1.52
1.57
0.97
0.95
0.93
0.91
0.88
0.86
0.84
0.83
0.81
0.80
0.79
0.78
0.78
0.77
0.77
0.77
0.76
0.76
0.75
Gamma Optimum
NFmin
(dB)
ANG
Page 5
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3SK165A
Package Outline Unit: mm
M-254
SONY CODE
EIAJ CODE
JEDEC CODE
M-254
PACKAGE MASS
0.01g
2.9 ± 0.2
1.9
( 0.95 )
( 0.95 )
1.1 – 0.1
+ 0.2
0.6
2.8 ± 0.2
1.6 – 0.1
+ 0.2
1.8
( 0.85 )
( 0.95 )
0 to 0.1
0.10 – 0.01
+ 0.1
0.6 – 0.05
+ 0.1
0.4 – 0.05
+ 0.1
1
2
3
4
1. Source
2. Gate1
3. Gate2
4. Drain
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