Datasheet 3SK290 Datasheet (HIT)

Silicon N-Channel Dual Gate MOS FET

Application

UHF RF amplifier

Features

· Low noise figure.

NF = 2.3 dB Typ. at f = 900 MHz

· High gain.

PG = 19.3 dB Typ. at f = 900 MHz

3SK290

ADE-208-271

1st. Edition

Outline

CMPAK–4

2

3

1

4

1. Source

2. Gate1

3. Gate2

4. Drain

3SK290

Absolute Maximum Ratings (Ta = 25¡C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate 1 to source voltage V
Gate 2 to source voltage V
Drain current I

DS

G1S

G2S

D

Channel power dissipation Pch 100 mW
Channel temperature Tch 125 °C
Storage temperature Tstg –55 to +125 °C

Attention: This device is very sensitive to electro static discharge.

It is recommended to adopt appropriate cautions when handling this transistor.

12 V

±8V
±8V

25 mA

2

Electrical Characteristics (Ta = 25¡C)

Item Symbol Min Typ Max Unit Test conditions

Drain to source breakdown

V

(BR)DSX

voltage
Gate 1 to source breakdown

V

(BR)G1SS

voltage
Gate 2 to source breakdown

V

(BR)G2SS

voltage
Gate 1 cutoff current I
Gate 2 cutoff current I
Drain current I

Gate 1 to source cutoff voltage V

Gate 2 to source cutoff voltage V

G1SS

G2SS

DS(on)

G1S(off)

G2S(off)

Forward transfer admittance |yfs| 16 22 — mS V

Input capacitance Ciss 1.2 1.8 2.2 pF V

Output capacitance Coss 0.7 1.2 1.4 pF
Reverse transfer capacitance Crss — 0.02 0.03 pF
Power gain PG 17 19.3 — dB V

Noise figure NF — 2.3 2.8 dB
Note: Marking is “ZJ–”.

12 — — V ID = 200 mA, V

V

= –3 V

G2S

±8— —V IG1 = ±10 mA, V

±8— —V IG2 = ±10 mA, V

——±100 nA V
——±100 nA V

0.5 — 10 mA V

–0.6 — +0.5 V V

0 — +1.0 V V

= ±6 V, V

G1S

= ±6 V, V

G2S

= 6 V, V

DS

V

= 3 V

G2S

= 10 V, V

DS

I

= 100 mA

D

= 10 V, V

DS

I

= 100 mA

D

= 6 V, V

DS

I

= 10 mA, f = 1 kHz

D

= 6 V, V

DS

I

= 10 mA, f = 1 MHz

D

= 4 V, V

DS

I

= 10 mA, f = 900 MHz

D

G1S

G2S

G1S

G2S

G2S

G2S

G1S

G2S

G1S

= 0.5 V,

= 3 V,

= 3V,

= 3 V,

3SK290

= –3 V,

= VDS = 0

G2S

= VDS = 0

G1S

= VDS = 0
= VDS = 0

= 3 V,

= 3 V,

3

3SK290

Maximum Channel Power

Dissipation Curve

200

150

100

50

Channel Power Dissipation Pch (mW)

0 50 100 150 200

Ambient Temperature Ta (¡C)

Drain Current vs.

Gate 1 to Source Voltage

20

V = 6 V

DS

16

3.0 V

2.0 V

2.5 V

D

12

1.5 V

20

Typical Output Characteristics

V = 3 V

G2S

0.8 V

0.6 V

0.4 V

V = 0.2V

G1S

16

D

12

1.2 V

1.0 V

8

4

Drain Current I (mA)

0246810

Drain to Source Voltage V (V)

DS

Drain Current vs.

Gate 2 to Source Voltage

20

V = 6 V

16

DS

3.0 V

1.5 V

1.0 V

2.5 V

D

12

2.0 V

8

V = 1.0 V

4

Drain Current I (mA)

0

0.8 1.6 2.4 3.2 4.0

G2S

Gate 1 to Source Voltage V (V)

G1S

8

V = 0.5 V

G1S

4

Drain Current I (mA)

0

Gate 2 to Source Voltage V (V)

4.03.22.41.60.8

G2S

4

30

fs

24

18

Forward Transfer Admittance

vs. Gate 1 to Source Voltage

V = 6 V

DS

f = 1 kHz

V = 3.0 V

G2S

2.5 V

2.0 V

1.5 V

3SK290

Power Gain vs. Drain Current

20

16

12

12

6

0

Forward Transfer Admittance |y | (mS)

–0.5 0 0.5 1.0 1.5

Gate1 to Source Voltage V (V)

1.0 V

G1S

Noise Figure vs. Drain Current

5

4

3

2

Noise Figure NF (dB)

1

2.0

8

4

Power Gain PG (dB)

0

4 8 12 16 20

Drain Current I (mA)

V = 4 V

DS

V = 3 V

G2S

f = 900 MHz

V = 4 V

DS

V = 3 V

G2S

f = 900 MHz

D

0

4 8 12 16 20

Drain Current I (mA)

D

5

3SK290

S11 Parameter vs. Frequency

1

.8

.6

.4

.2

0

–.2

.2

–.4

Condition:

.6

.4

–.6

1.0

.8

–.8

–1

V = 4 V , V = 3 V

DS

I = 10 mA , Zo = 50

D

50 to 1000 MHz (50 MHz step)

S12 Parameter vs. Frequency

120¡

150¡

180¡

–150¡

–120¡

Condition:

50 to 1000 MHz (50 MHz step)

V = 4 V , V = 3 V
I = 10 mA , Zo = 50

–90¡

DS

D

90¡

1.5

1.5

234

–1.5

G2S

2

3

4

5

10

10

5

–10

–5

–4

–3

–2

W

Scale: 0.002 / div.

60¡

30¡

–30¡

–60¡

G2S

W

S21 Parameter vs. Frequency

Scale: 1 / div.

180¡

150¡

–150¡

120¡

–120¡

Condition:

90¡

–90¡

V = 4 V , V = 3 V

DS

I = 10 mA , Zo = 50

D

60¡

30¡

0¡

–30¡

–60¡

G2S

W

50 to 1000 MHz (50 MHz step)

S22 Parameter vs. Frequency

1

.8

.6

.4

.2

0¡

0

–.2

.2

–.4

Condition:

.6

.4

.8

–.6

–.8

–1

V = 4 V , V = 3 V

DS

I = 10 mA , Zo = 50

D

50 to 1000 MHz (50 MHz step)

1.0

1.5

1.5

234

–1.5

G2S

2

3

4

5

10

10

5

–10

–5

–4

–3

–2

W

6

3SK290

S Parameter (VDS = 4 V, V

Freq. S11 S21 S12 S22
(MHz) MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG.

50 0.998 –3.3 2.17 176 0.001 41.3 0.971 –1.9
100 0.994 –6.7 2.20 172 0.001 88.9 0.971 –4.5
150 0.997 –10.2 2.19 168 0.002 74.4 0.970 –7.1
200 0.991 –13.5 2.17 163 0.003 81.6 0.969 –9.8
250 0.993 –16.9 2.16 159 0.004 79.7 0.967 –12.1
300 0.980 –20.8 2.12 155 0.004 72.6 0.965 –14.8
350 0.976 –23.7 2.10 151 0.005 66.9 0.962 –17.3
400 0.971 –27.0 2.08 146 0.005 70.9 0.959 –19.7
450 0.962 –30.7 2.05 142 0.006 67.7 0.956 –22.1
500 0.955 –33.7 2.03 139 0.006 63.9 0.953 –24.8
550 0.945 –36.9 1.99 135 0.006 64.1 0.950 –27.2
600 0.939 –40.2 1.96 131 0.006 63.9 0.946 –29.5
650 0.927 –43.3 1.93 127 0.006 59.9 0.942 –32.1
700 0.925 –46.5 1.90 123 0.006 60.0 0.939 –34.6
750 0.911 –49.4 1.87 120 0.006 58.3 0.933 –36.7
800 0.901 –52.3 1.84 116 0.006 60.3 0.930 –39.1
850 0.893 –55.9 1.81 112 0.005 62.0 0.925 –41.5
900 0.881 –59.0 1.78 108 0.005 61.2 0.921 –43.8
950 0.876 –61.5 1.75 105 0.005 65.0 0.917 –46.1
1000 0.869 –64.3 1.71 102 0.005 68.8 0.913 –48.4

= 3 V, ID = 10 mA, ZO = 50 ½)

G2S

7

0.4

+ 0.1
– 0.05

2.95 ± 0.2

1.9 ± 0.2

0.95 0.95

0.4

+ 0.1

– 0.05

0.65

0.16

+ 0.1
– 0.06

Unit: mm

0.4

+ 0.1
– 0.05

0.95

1.8 ± 0.2

0.85

0.6

+ 0.1
– 0.05

0.3

+ 0.2

1.1

1.5 ± 0.15

0.65

– 0.1

+ 0.2

– 0.6

2.8

Hitachi Code
JEDEC
EIAJ
Weight

0 – 0.1

(reference value)

MPAK-4
—
Conforms

0.013 g

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