Datasheet 3SK186 Datasheet (HIT)

Silicon N-Channel Dual Gate MOS FET

Application

UHF TV tuner RF amplifier

Outline

MPAK-4

3SK186

2

3

1

4

1. Source

2. Gate1

3. Gate2

4. Drain

3SK186

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate 1 to source voltage V
Gate 2 to source voltage V
Drain current I

DS

G1S

G2S

D

Channel power dissipation Pch 150 mW
Channel temperature Tch 125 °C
Storage temperature Tstg –55 to +125 °C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Drain to source breakdown

V

(BR)DSX

voltage
Gate 1 to source breakdown

V

(BR)G1SS

voltage
Gate 2 to source breakdown

V

(BR) G2SS

voltage
Gate 1 cutoff current I
Gate 2 cutoff current I
Gate 1 to source cutoff voltage V

Gate 2 to source cutoff voltage V

Drain current I

G1SS

G2SS

G1S(off)

G2S(off)

DSS

Forward transfer admittance |yfs|15——mSV

Input capacitance Ciss — 1.7 2.2 pF V

Output capacitance Coss — 1.0 1.4 pF
Reverse transfer capacitance Crss — 0.017 0.03 pF
Power gain PG 16 19 — dB V

Noise figure NF — 3.0 4.5 dB
Note: Marking is “FI–”.

12 — — V V

±10 — — V IG1 = ±10 µA, V

±10 — — V IG2 = ±10 µA, V

——±100 nA V
——±100 nA V
+0.5 — –0.8 V V

+0.5 — –0.8 V V

0—4mAV

12 V

±10 V
±10 V

35 mA

= V

G2S

= ±8 V, V
= ±8 V, V

= 6 V, V

= 6 V, V

= 6 V, V
= 6 V, V

= 6 V, V

= 4 V, V

= –5 V,

G2S

G1S

G2S

G2S

G2S

G2S

G1S

I

= 200 µA

D

G1S

G2S

DS

I

= 100 µA

D

DS

I

= 100 µA

D

DS

DS

I

= 10 mA, f = 1 kHz

D

DS

I

= 10 mA, f = 1 MHz

D

DS

I

= 10 mA, f = 900 MHz

D

G2S

G1S

= 3V,

= 3V,

= 3V, V
= 3V,

= 3V,

= 3V,

= VDS = 0

G2S

= VDS = 0

G1S

= VDS = 0
= VDS = 0

G1S

= 0

2

3SK186

Maximum Channel Power

Dissipation Curve

300

(mW)

ch

200

100

Channel Power Dissipation P

0

50 100 150

Ambient Temperature Ta (°C)

Drain Current vs. Gate 1

to Source Voltage

20

16

(mA)

D

12

VDS = 4 V

3

2

8

2.5

1.0

1.5

Typical Output Characteristics

20

1.6

1.4

1.2

16

(mA)

D

12

8

Drain Current I

4

02 6 10

48

Drain to Source Voltage V

1.0

V

0.8

0.6

0.4

0.2

P

ch

= 150 mW

= 3 V

G2S

V

= 0 V

G1S

(V)

DS

Drain Current vs. Gate 2

to Source Voltage

20

16

(mA)

D

12

1.75

VDS = 4 V

1.5

1.25

1.0

0.75

8

Drain Current I

4

0

0–0.8 1.6 3.20.8 2.4

Gate 1 to Source Voltage V

V

G2S

= 0.5 V

G1S

(V)

Drain Current I

4

0.5

0.25

0 0.8 2.4 4.01.6 3.2

Gate 2 to Source Voltage V

V

G1S

G2S

= 0

(V)

3

3SK186

20

 (mS)

fs

16

Forward Transfer Admittance vs.

Gate 1 to Source Voltage

VDS = 6 V

3

2.5

2.0

Power Gain vs. Drain Current

20

16

12

8

4

Forward Transfer Admittance y

0

0 0.8 1.60.4–0.4 1.2

Gate 1 to Source Voltage V

1.5

1.0

V

= 0.5 V

G2S

(V)

G1S

Noise Figure vs. Drain Current

10

8

6

4

Noise Figure NF (dB)

2

12

8

V

= 4 V

Power Gain PG (dB)

4

DS

V

= 3 V

G2S

f = 900 MHz

02 6 1048

V

= 4 V

DS

V

= 3 V

G2S

f = 900 MHz

Drain Current I

(mA)

D

02 6 1048

Drain Current I

(mA)

D

4

0.4

+ 0.1
– 0.05

2.95 ± 0.2

1.9 ± 0.2

0.95 0.95

0.4

+ 0.1

– 0.05

0.65

0.16

+ 0.1
– 0.06

Unit: mm

0.4

+ 0.1
– 0.05

0.95

1.8 ± 0.2

0.85

0.6

+ 0.1
– 0.05

0.3

+ 0.2

1.1

1.5 ± 0.15

0.65

– 0.1

+ 0.2

2.8

– 0.6

Hitachi Code
JEDEC
EIAJ
Weight

(reference value)

0 – 0.1

MPAK-4
—
Conforms

0.013 g

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