Datasheet 3SK309 Datasheet (HIT)

3SK309

GaAs N Channel Dual Gate MES FET

UHF RF Amplifier

Features

• Capable of low voltage operation (VDS = 1.5 to 3 V)

• Excellent low noise characteristics (NF = 1.25 dB typ. at f = 900 MHz)

• High power gain (PG = 21.0 dB typ. at f = 900 MHz)

Outline

CMPAK–4

ADE-208-472 A

2nd. Edition

2

3

1

4

1. Source

2. Gate1

3. Gate2

4. Drain

3SK309

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V Gate 1 to source voltage V Gate 2 to source voltage V Drain current I

DS

G1S

G2S

D

Channel power dissipation Pch 100 mW Channel temperature Tch 125 °C Storage temperature Tstg –55 to +125 °C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Gate 1 to cutoff current I

Gate 2 to cutoff current I

Gate 1 to source cutoff voltage V

Gate 2 to source cutoff voltage V

Zero gate voltege drain current I

G1SS

G2SS

G1S(off)

G2S(off)

DSS

Forward transfer admittance |yfs| 30 40 — mS VDS = 3 V, V

Power gain PG 18 21 — dB VDS = 3 V, V Noise figure NF — 1.25 1.5 dB ID = 5 mA, f = 900 MHz Power gain PG — 20 — dB VDS = 1.5 V, V Noise figure NF — 1.3 — dB ID = 3 mA, f = 900 MHz

Note: Marking is “XV–”

— — –20 µAV

–0.2 — –1.5 V VDS = 3 V, V

25 40 60 mA VDS = 3 V, V

6V –4 V –4 V 18 mA

= –4 V

G1S

V

= VDS = 0

G2S

= –4 V

G2S

V

= VDS = 0

G1S

= 0

I

= 100 µA

D

I

= 100 µA

D

V

= 0

G2S

I

= 5 mA, f = 1 kHz

D

G2S

G1S

G2S

= 0

G2S

= 0

2

Main Characteristics

3SK309

Maximum Channel Power

Dissipation Curve

200

150

100

50

Channel Power Dissipation Pch (mW)

0 50 100 150 200

Ambient Temperature Ta (°C)

Drain Current vs.

Gate1 to Source Voltage

20

16

(mA)

D

12

VDS = 3 V

0 V

–0.2 V

–0.4 V

–0.6 V

Typical Output Characteristics

20

–0.4 V

–0.6 V

–0.5 V

16

Pulse Test

(mA)

D

12

–0.7 V

8

–0.8 V

Drain Current I

4

V

G1S

–0.9 V

= –1 V

012345

Drain to Source Voltage V

DS

(V)

Drain Current vs.

Gate2 to Source Voltage

20

VDS = 3 V

16

0 V –0.2 V –0.4 V

(mA)

D

12

–0.6 V

8

Drain Current I

4

V

G2S

0

–2.0

–1.6 –1.2 –0.8 –0.4 0

Gate1 to Source Voltage V

–0.8 V

= –1 V

G1S

(V)

8

Drain Current I

4

0

–2.0

–1.6 –1.2 –0.8 –0.4 0

Gate2 to Source Voltage V

V

G1S

–0.8 V

= –1 V

(V)

G2S

3

3SK309

Forward Transfer Admittance vs.

Gate1 to Source Voltage

100

VDS = 3 V

fs

f = 1 kHz

80

0 V

60

–0.2 V

–0.4 V

40

–0.6 V

20

V

Forward Transfer Admittance |y | (mS)

G2S

0

–2.0

Gate1 to Source Voltage V

25

–0.8 V

= –1 V

–1.6 –1.2 –0.8 –0.4 0

G1S

Power Gain vs. Drain Current

3 V

20

V = 1.5 V

DS

15

(V)

Forward Transfer Admittance vs.

Drain Current

100

VDS = 3 V V

fs

80

= 0

G2S

f = 1 kHz

60

40

20

Forward Transfer Admittance |y | (mS)

0

4 8 12 16 20

Drain Current ID (mA)

2.0

Noise Figure vs. Drain Current

1.6 V = 1.5 V

DS

1.2

3 V

10

Power Gain PG (dB)

5

0

4 8 12 16 20 Drain Current I (mA)

V = 0

G2S

f = 900 MHz

D

0.8

Noise Figure NF (dB)

0.4

0

4 8 12 16 20 Drain Current I (mA)

V = 0

G2S

f = 900 MHz

D

4

3SK309

Power Gain vs.

Drain to Source Voltage

25

20

15

10

Power Gain PG (dB)

5

0

1345

2

Drain to Source Voltage VDS (V)

Power Gain vs.

Gate2 to Source Voltage

25

20

15

5 mA

ID = 3 mA

V

= 0

G2S

f = 900 MHz

Noise Figure NF (dB)

6

2.0

1.6

1.2

0.8

0.4

50

40

30

Noise Figure vs.

Drain to Source Voltage

0

2

1345

Drain to Source Voltage VDS (V)

Gain Reduction vs.

Gate2 to Source Voltage

V for I at V V f = 900 MHz

3 mA

ID = 5 mA

V

= 0

G2S

f = 900 MHz

is fixed

G1S

= 5 mA

D

= 0

G2S

= 3 V

DS

6

10

Power Gain PG (dB)

5

V

G1S

for I at V V

DS

is fixed = 5 mA

D G2S

= 3 V

f = 900 MHz

0

–0.8 –0.6 –0.4 –0.2

–1 0

Gate2 to Source Voltage V

G2S

= 0

(V)

20

Gain Reduction GR (dB)

10

0

–1.5 –0.5 0 0.5 1.0

–1.0

Gate2 to Source Voltage V

G2S

(V)

5

3SK309

S11 Parameter vs. Frequency

1

.8

.6

.4

.2

0

–.2

–.4

Test Condtion:

.2

.4

–.6

.6

1

.8

–.8

–1

VDS = 3 V , V ID = 5 mA , Zo = 50Ω

100 to 2000 MHz (100 MHz step)

S12 Parameter vs. Frequency

120°

150°

180°

–150°

–120°

Test Condtion:

100 to 2000 MHz (100 MHz step)

VDS = 3 V , V ID = 5 mA , Zo = 50Ω

90°

–90°

1.5

234

–1.5

G2S

Scale: 0.01 / div.

2

5

–2

= 0 V

60°

–60°

G2S

3

4

10

–4

–3

= 0 V

5

–5

10

–10

–30°

30°

S21 Parameter vs. Frequency

Scale: 1 / div.

150°

180°

–150°

120°

–120°

Test Condtion:

90°

–90°

VDS = 3 V , V

60°

–60°

G2S

30°

0°

–30°

= 0 V

ID = 5 mA , Zo = 50Ω

100 to 2000 MHz (100 MHz step)

S22 Parameter vs. Frequency

1

.8

.6

.4

.2

.4

–.6

.6

.8

–.8

–1

VDS = 3 V , V

0°

0

–.2

.2

–.4

Test Condtion:

ID = 5 mA , Zo = 50Ω

100 to 2000 MHz (100 MHz step)

1.5 2

3

4

5

10

1.5

234

1

–1.5

G2S

5

–2

= 0 V

10

–10

–5

–4

–3

6

3SK309

Sparameter (VDS = 3 V, V

Freq. S11 S21 S12 S22 (MHz) MAG ANG MAG ANG MAG ANG MAG ANG

100 0.999 –2.8 3.29 176.7 0.00167 95.2 0.963 –0.9 200 0.997 –5.9 3.27 173.1 0.00302 89.0 0.963 –2.2 300 0.995 –9.4 3.29 169.0 0.00394 80.5 0.961 –3.5 400 0.992 –12.3 3.26 165.8 0.00506 83.7 0.959 –5.0 500 0.981 –15.2 3.23 161.9 0.00703 80.8 0.957 –6.3 600 0.968 –18.9 3.22 158.3 0.00797 78.1 0.955 –8.0 700 0.956 –21.8 3.20 154.4 0.00911 76.9 0.953 –9.2 800 0.949 –24.5 3.15 151.3 0.0104 77.1 0.949 –10.6 900 0.935 –27.6 3.14 147.4 0.0114 73.2 0.946 –12.0 1000 0.922 –30.7 3.12 143.7 0.0123 72.1 0.942 –13.5 1100 0.912 –33.5 3.06 140.3 0.0137 71.9 0.939 –14.7 1200 0.895 –36.2 3.03 136.7 0.0139 70.8 0.935 –16.0 1300 0.873 –38.7 2.97 133.3 0.0150 68.5 0.931 –17.3 1400 0.860 –41.4 2.93 130.1 0.0161 68.5 0.926 –18.6 1500 0.838 –43.8 2.89 126.9 0.0162 67.2 0.922 –20.2 1600 0.822 –45.6 2.85 123.6 0.0171 66.6 0.918 –21.5 1700 0.807 –48.3 2.83 120.5 0.0178 67.2 0.913 –22.7 1800 0.787 –50.7 2.79 117.4 0.0185 66.0 0.909 –23.8 1900 0.767 –52.4 2.74 114.4 0.0186 64.3 0.905 –25.5 2000 0.756 –55.0 2.69 110.9 0.0190 63.7 0.901 –26.6

= 0, ID = 5 mA, Zo = 50 Ω)

G2S

7

3SK309

Power Gain, Noise Figure Test Circuit

10 p max

1000 pF

L1

L2

Input (50 )

Ω

V

G2

V

G1

1000 pF

47 k

1000 pF

V

D

1000 pF

1 kRFC

Unit : Resistance ( ) Capacitance (F)

L3

L4

Output (50 )

Ω

10 p max

Ω

L1 to L4 : 1 mm copper wire

RFC : 3 turn, 6 mm inside dia ( 1 mm enameled copper wire)φ

L1 :

L2 :

φ

4

32

25

5

7

90°

120°

L3 :

6

26

L4 :

21

7

90°

120°

6

Unit : mm

8

Package Dimentions

2.0

1.3

0.65 0.65

3

0.3

+ 0.1 – 0.05

±0.2

3SK309

Unit: mm

+ 0.1

0.16

+ 0.1

0.3

– 0.05

0.425

2

– 0.06

0.3

+ 0.1 – 0.05

±0.3

1.25

2.1

0.6

1

+ 0.1

0.4

– 0.05

0.425

4

0.65

0 ~ 0.1

1.25

0.2

±0.1

0.9

Hitachi code

CMPAK-4

EIAJ

JEDEC

9

Datasheet Title

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products.

1. This product must not be placed in the mouth, as it contains toxic substances that may cause poisoning. If by chance the product is placed in the mouth, take emergency action such as inducing vomiting, then consult a physician without delay.

2. Disposal of this product must be handled, separately from other general refuse, by a specialist processing contractor in the same way as dangerous items.

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Datasheet Title

Hitachi, Ltd.

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