Page 1
Silicon N-Channel Dual Gate MOS FET
UHF / VHF RF Amplifier
Features
• Low noise characteristics;
(NF = 1.0 dB typ. at f = 200 MHz)
• High power gain characteristics ;
(PG = 27.6 dB typ. at f = 200 MHz)
Outline
3SK317
ADE-208-778 (Z)
1st. Edition
Mar. 1999
Note: Marking is “ZR-”.
CMPAK-4
2
3
1
4
1. Source
2. Gate1
3. Gate2
4. Drain
Page 2
3SK317
G
G
G1S
G2S
S
G2S
S
G1S
S
G1S
S
G2S
S
G2S
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate1 to source voltage V
Gate2 to source voltage V
Drain current I
DS
G1S
G2S
D
Channel power dissipation Pch 100 mW
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
Gate1 to source breakdown
(BR)DSS
V
(BR)G1SS
voltage
Gate2 to source breakdown
V
(BR)G2SS
voltage
Gate1 to source cutoff current I
Gate2 to source cutoff current I
Gate1 to source cutoff voltage V
Gate2 to source cutoff voltage V
Drain current I
G1SS
G2SS
G1S(off)
G2S(off)
DS(op)
Forward transfer admittance |yfs|2025—mSV
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
iss
oss
rss
Power gain PG 24 27.6 — dB VDS = 6 V, V
Noise figure NF — 1.0 1.5 dB ID = 10 mA , f = 200 MHz
Power gain PG 12 15.6 — dB VDS = 6 V, V
Noise figure NF — 3 4 dB ID = 10 mA , f = 900 MHz
Noise figure NF — 2.7 3.5 dB V
14——V I
±8——V I
±8——V I
——±100 nA V
——±100 nA V
0 0.2 1 V V
0 0.3 1 V V
4814mAV
2.4 3.1 3.5 pF VDS = 6 V, V
0.8 1.1 1.4 pF ID = 10 mA , f = 1 MHz
— 0.021 0.04 pF
14 V
±8V
±8V
25 mA
= 200 µA
D
V
= V
G1S
= ±10 µA
1
V
G2S
= ±10 µA
2
V
G1S
= -3 V
G2S
= VDS = 0
= VDS = 0
= ±6 V
V
= VDS = 0
G2S
= ±6 V
V
= VDS = 0
G1S
= 10 V, V
D
I
= 100 µA
D
= 10 V, V
D
I
= 100 µA
D
= 6 V, V
D
V
= 3 V
G2S
= 6 V, V
D
I
= 10 mA , f = 1 kHz
D
= 6 V, V
D
I
= 10 mA , f = 60 MHz
D
= 3 V
= 3 V
= 0.75 V
= 3 V
= 3 V
G2S
= 3 V
G2S
= 3 V
G2S
= 3 V
2
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200
150
Maximum Channel Power
Dissipation Curve
3SK317
20
16
D
12
Typical Output Characteristics
1.2 V
1.0 V
V = 3 V
G2S
Pulse test
100
50
Channel power dissipation Pch (mW)
0
50 100 150 200
Ambient Temperature Ta (°C)
Drain Current vs. Gate1 to Source Voltage
20
16
3.0 V
2.5 V
2.0 V
V = 6 V
DS
Pulse test
1.5 V
D
12
8
1.0 V
8
0.8 V
Drain current I (mA)
4
0
210
0.6 V
V = 0.4 V
G1S
468
Drain to source voltage V (V)
Drain Current vs. Gate2 to Source Voltage
20
3.0 V
2.5 V
16
D
12
1.5 V
2.0 V
1.0 V
V = 6 V
DS
Pulse test
8
DS
Drain current I (mA)
4
V = 0.5 V
G2S
0
12345
Gate1 to source voltage V (V)
G1S
Drain current I (mA)
4
0
12345
V = 0.5 V
G1S
Gate2 to source voltage V (V)
G2S
3
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3SK317
30
fs|
24
|y (mS)
Forward Transfer Admittance vs.
Gate1 to Source Voltage
V = 6 V
DS
f = 1kHz
3 V
50
40
Power Gain vs. Drain Current
V = 6 V
DS
V = 3V
G2S
f = 200MHz
18
12
6
V = 0.5 V
Forward transfer admittance
0
G2S
0.4 0.8 1.2 1.6 2
1 V
Gate1 to source voltage V (V)
Noise Figure vs. Drain Current
5
4
3
2 V
1.5 V
V = 6 V
DS
V = 3V
G2S
f = 200MHz
2.5 V
G1S
30
20
Power gain PG (dB)
10
0
4 8 12 16 20
Drain current I (mA)
Power Gain vs. Drain to Source Voltage
50
40
30
D
V = 3V
G2S
I = 10mA
D
f = 200MHz
2
Noise figure NF (dB)
1
048121620
4
Drain current I (mA)
D
20
Power gain PG (dB)
10
0 246810
Drain to source voltage V (V)
DS
Page 5
3SK317
Noise Figure vs. Drain to Source Voltage
5
V = 3V
G2S
I = 10mA
4
D
f = 200MHz
3
2
Noise figure NF (dB)
1
0246810
Drain to source voltage V (V)
Noise Figure vs. Drain Current
5
DS
20
Power Gain vs. Drain Current
16
12
8
V = 6V
Power gain PG (dB)
4
0
4 8 12 16 20
Drain current I (mA)
DS
V = 3V
G2S
f = 900MHz
D
Power Gain vs. Drain to Source Voltage
20
4
3
2
Noise figure NF (dB)
1
V = 6V
DS
V = 3V
G2S
f = 900MHz
048121620
Drain current I (mA)
D
16
12
8
4
Power gain PG (dB)
0
246810
Drain to source voltage V (V)
V = 3V
G2S
I = 10mA
D
f = 900MHz
DS
5
Page 6
3SK317
Noise Figure vs. Drain to Source Voltage
10
V = 3V
G2S
I = 10mA
8
D
f = 900MHz
6
4
Noise figure NF (dB)
2
0246810
Drain to source voltage V (V)
Noise Figure vs. Drain to Source Voltage
5
4
DS
V = 3V
G2S
I = 10mA
D
f = 60MHz
Noise Figure vs. Drain Current
5
4
3
2
Noise figure NF (dB)
1
0
4 8 12 16 20
Drain current I (mA)
V = 6V
DS
V = 3V
G2S
f = 60MHz
D
3
2
Noise figure NF (dB)
1
0246810
Drain to source voltage V (V)
6
DS
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Package Dimensions
2.0
1.3
0.65 0.65
3
0.3
+ 0.1
– 0.05
±0.2
3SK317
Unit: mm
+ 0.1
0.16
+ 0.1
0.3
– 0.05
0.425
2
– 0.06
0.3
+ 0.1
– 0.05
±0.3
1.25
2.1
0.6
1
+ 0.1
0.4
– 0.05
0.425
4
0.65
0 ~ 0.1
1.25
0.2
±0.1
0.9
Hitahi Code
EIAJ
JEDEC
CMPAK-4
SC-82AB
—
7
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