Datasheet 3SK255-T2, 3SK255-T1, 3SK255 Datasheet (NEC)

©

1993

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

3SK255

FEATURES

• Low VDD Use : (VDS = 3.5 V)

• Driving Battery

• Low Noise Figure : NF = 1.8 dB TYP. (f = 900 MHz)

• High Power Gain : G

PS = 18.0 dB TYP. (f = 900 MHz)

• Suitable for uses as RF amplifier in UHF TV tuner.

• Automatically Mounting : Embossed Type Taping

• Small Package : 4 Pins Super Mini Mold

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

Drain to Source Voltage VDSX 18 V
Gate1 to Source Voltage VG1S ±8

*1

V

Gate2 to Source Voltage V

G2S ±8

*1

V
Gate1 to Drain Voltage VG1D 18 V
Gate2 to Drain Voltage VG2D 18 V
Drain Current I

D 25 mA

Total Power Dissipation PD 130 mW
Channel Temperature Tch 125 °C
Storage Temperature T

stg –55 to +125 °C

*1: RL ≥ 10 kΩ
*2: Free air

PRECAUTION

Avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltage

or fields.

RF AMPLIFIER FOR UHF TUNER

N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR

4 PINS SUPER MINI MOLD

Document No. P10586EJ3V0DS00 (3rd edition)
Date Published June 1996 P
Printed in Japan

2.1±0.2

1.25±0.1

2

3

1

4

2.0±0.2

1.25

0.650.60

+0.1

–0.05

0.3

+0.1

–0.05

0.4

(1.3)

+0.1

–0.05

0.3

+0.1

–0.05

0.3

0.9±0.1

0.3

0 to 0.1

+0.1

–0.05

0.15

PACKAGE DIMENSIONS

(Unit: mm)

PIN CONNECTIONS

1. Source

2. Drain

3. Gate2

4. Gate1

3SK255

2

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS

Drain to Source Breakdown Voltage

BVDSX 18 V VG1S = VG2S = –2 V, ID = 10 µA

Drain Current IDSX 0.5 7.0 mA

VDS = 3.5 V, VG2S = 3 V, VG1S = 0.75 V
Gate1 to Source Cutoff Voltage VG1S(off) –1.0 0 +1.0 V VDS = 3.5 V, VG2S = 3 V, ID = 10 µA
Gate2 to Source Cutoff Voltage VG2S(off) 0 0.5 1.0 V VDS = 3.5 V, VG1S = 3 V, ID = 10 µA
Gate1 Reverse Current IG1SS ±20 nA VDS = 0, VG2S = 0, VG1S = ±6 V
Gate2 Reverse Current IG2SS ±20 nA VDS = 0, VG1S = 0, VG2S = ±6 V

Forward Transfer Admittance |yfs|141924mS

VDS = 3.5 V, VG2S = 3 V, ID = 7 mA

f = 1 kHz
Input Capacitance Ciss 1.2 1.7 2.2 pF

VDS = 3.5 V, VG2S = 3 V, ID = 7 mA
Output Capacitance Coss 0.5 1.0 1.5 pF

f = 1 MHz
Reverse Transfer Capacitance Crss 0.01 0.03 pF

Power Gain Gps 15 18 21 dB VDS = 3.5 V, VG2S = 3 V, ID = 7 mA
Noise Figure NF 1.8 3.0 dB

f = 900 MHz

IDSX Classification

Rank U1G
Marking U1G
IDSX (mA) 0.5 to 7.0

3SK255

3

TYPICAL CHARACTERISTICS (TA = 25 ˚C)

TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE

T

A

– Ambient Temperature – °C

P

D

– Total Power Dissipation – mW

0

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE

V

DS

– Drain to Source Voltage – V

I

D

– Drain Current – mA

DRAIN CURRENT vs.
GATE1 TO SOURCE VOLTAGE

V

G1S

– Gate1 to Source Voltage – V

I

D

– Drain Current – mA

0

FORWARD TRANSFER ADMITTANCE vs.
GATE1 TO SOURCE VOLTAGE

V

G1S

– Gate1 to Source Voltage – V

|y

fs

| – Forward Transfer Admittance – mS

FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT

I

D

– Drain Current – mA

|y

fs

| – Forward Transfer Admittance – mS

INPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE

V

G2S

– Gate2 to Source Voltage – V

C

iss

– Input Capacitance – pF

130 mW

100

200

25 50 75 100 125

V

G2S

= 3.0 V

V

G1S

= 1.2 V

1.0 V

0.8 V

0.6 V

0.4 V

0.2 V

0

5

10

15

20

25

510

V

DS

= 3.5 V

V

G2S

= 3.5 V

3.0 V

2.5 V

5

10

15

20

25

0.5 1.0 1.5 2.0 2.5

V

DS

= 3.5 V

f = 1 kHz

0
–0.5

8

16

24

32

40

0 0.5 1.0 1.5 2.0

V

DS

= 3.5 V

f = 1 kHz

0

8

16

24

32

40

10 20

V

G2S

= 3.5 V

3.0 V

2.5 V

1.5 V

1.0 V

I

D

= 7 mA
(at VDS = 3.5 V,
V

G2S

= 3.0 V)

f = 1 MHz

–1.0 0 1.0 2.0 3.0 4.0

1.0

2.0

3.0

4.0

2.0 V

1.5 V

1.0 V

3.0 V

2.5 V

2.0 V

1.5 V

1.0 V

V

G2S

= 3.5 V

2.0 V

5.0

0

3SK255

4

ID = 7 mA
(at VDS = 3.5 V,
V

G2S

= 3.0 V)

f = 1 MHz

OUTPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE

V

G2S

– Gate2 to Source Voltage – V

C

oss

– Output Capacitance – pF

–1.0

POWER GAIN AND NOISE FIGURE vs.
GATE2 TO SOURCE VOLTAGE

V

G2S

– Gate2 to Source Voltage – V

G

PS

– Power Gain – dB

00 1.0 2.0 3.0 4.0

–1.0

–20

1.0 2.0 3.0 4.0

0

0.5

1.0

1.5

2.0

2.5

NF – Noise Figure – dB

–10

0

10

20

I

D

= 7 mA
(at VDS = 3.5 V,
V

G2S

= 3.0 V)

f = 900 MHz

G

PS

NF

10

5

0

S-Parameter

VDS = 3.5 V, VG2S = 3 V, ID = 7 mA

Frequency S11 S21 S12 S22

(MHz) MAG ANG MAG ANG MAG ANG MAG ANG

100 1.017 –6.5 2.057 173.3 0.035 –88.2 0.985 –2.9
200 1.000 –13.4 2.034 163.6 0.014 –121.6 0.987 –6.9
300 0.999 –19.8 1.991 155.5 0.006 67.0 0.988 –10.4
400 0.993 –26.6 1.996 146.8 0.006 71.3 0.983 –13.8
500 0.984 –32.6 1.956 136.7 0.005 117.8 0.985 –17.1
600 0.966 –39.1 1.930 130.4 0.002 –23.3 0.983 –20.8
700 0.948 –45.5 1.901 122.7 0.002 –162.4 0.979 –24.6
800 0.934 –51.4 1.897 114.5 0.003 37.8 0.986 –27.9
900 0.908 –57.5 1.897 105.6 0.011 –146.3 0.991 –32.1

1000 0.901 –83.8 1.984 96.6 0.010 –144.3 1.024 –36.4

3SK255

5

GPS AND NF TEST CIRCUIT AT f = 900 MHz

VG2S

1 000 pF

47 kΩ

1 000 pF

to 10 pF

to 10 pF

INPUT
50 Ω

L

1

47 kΩ RFC

L

2

to 10 pF

to 10 pF

50 Ω

1 000 pF

1 000 pF

VG1S VDD

L1, L2; 35 × 5 × 0.2 mm

OUTPUT

3SK255

6

[MEMO]

3SK255

7

[MEMO]

2

3SK255

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document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.

Standard: Computers, office equipment, communications equipment, test and measurement equipment,

audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots

Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster

systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)

Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life

support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.

M4 94.11