GaAs N-channel Dual Gate MES FET
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Description
The 3SK166A is an N-channel dual gate GaAs
MES FET for UHF band low-noise amplification. The
circuit matching is easier to be made for all UHF
band, resulting in the excellent performance, due to
the optimal design of input impedance.
Features
• Low voltage operation
• Low noise: NF = 1.2dB (typ.) at 800MHz
• High gain: Ga = 20dB (typ) at 800MHz
• High stability
Application
UHF band amplifier, oscillator
3SK166A
Structure
GaAs N-channel dual-gate metal semiconductor field-effect transistor
Absolute Maximum Ratings (Ta = 25°C)
• Drain to source voltage VDSX 8V
•Gate 1 to source voltage VG1S –6 V
• Gate 2 to source voltage VG2S –6 V
• Drain current ID 80 mA
• Allowable power dissipation PD 150 mW
• Channel temperature Tch 150 °C
• Storage temperature Tstg –55 to +150 °C
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
– 1 –
E96Y11-PS
3SK166A
Electrical Characteristics (Ta = 25°C)
Item
Drain cut-off current
Gate 1 to source current
Gate 2 to source current
Drain saturation current
Gate 1 to source cut-off voltage
Gate 2 to source cut-off voltage
Forward transfer admittance
Input capacitance
Feedback capacitance
Noise figure
Associated gain
∗
IDSS classification
Symbol Condition Min. Typ. Max. Unit
VDS = 8V
IDSX
VG1S = –4V
100
VG2S = 0V
VG1S = –5V
IG1SS
VG2S = 0V
–20
VDS = 0V
VG2S = –5V
IG2SS
VG1S = 0V
–20
VDS = 0V
VDS = 5V
IDSS
VG1S = 0V
20
80
VG2S = 0V
VDS = 5V
VG1S (OFF)
ID = 100µA
–1
–4
VG2S = 0V
VDS = 5V
VG2S (OFF)
ID = 100µA
–1
–4
VG1S = 0V
VDS = 5V
gm
ID = 10mA
VG2S = 1.5V
25
40
f = 1kHz
Ciss
Crss
NF
Ga
VDS = 5V
ID = 10mA
VG2S = 1.5V
f = 1MHz
VDS = 5V
ID = 10mA
VG2S = 1.5V
f = 800MHz
18
1.3
25
1.2
20
2.0
40
2.5
µA
µA
µA
mA
V
V
ms
pF
fF
dB
dB
Product name classification
3SK166A-0
3SK166A-2
IDSS RANK
20 to 80mA
45 to 80mA
Typical Characteristics (Ta = 25°C)
ID vs. VDS
100
(VG2S = 1.5V)
80
60
40
– Drain current [mA]
D
I
20
0
02468
VDS – Drain to source voltage [V]
VG1S
= 0V
–0.2V
–0.4V
–0.6V
–0.8V
–1.0V
–1.2V
–1.4V
–1.6V
ID vs. VG1S
100
(VDS = 5V)
80
70
60
– Drain current [mA]
D
I
40
20
–2.0 –1.5 –1.0 –0.5 0
G1S – Gate 1 to source voltage [V]
V
V
G2S
= 1.5V
1.0V
0.5V
0V
–0.5V
–1.5V
– 2 –
3SK166A
ID vs. VG2S
100
(VDS = 5V)
80
60
40
– Drain current [mA]
D
I
20
0
–2.0 –1.5 –1.0 –0.5 0
G2S – Gate 2 to source voltage [V]
V
NF vs. VG1S Ga vs. VG1S
6
(VDS = 5V, f = 800MHz)
5
4
V
G1S
= 0V
–0.2V
–0.4V
–0.6V
–0.8V
–1.0V
–1.2V
–1.4V
gm vs. VG1S
100
(VDS = 5V)
80
60
50
40
gm – Forward transfer admittance [ms]
20
–2.0 –1.5 –1.0 –0.5 0
VG1S – Gate 1 to source voltage [V]
30
(VDS = 5V, f = 800MHz)
25
VG2S = 1.5V
20
1.0V
1.5V
G2S
V
= 1.5V
1.0V
0.5V
0V
–0.5V
–1.0V
3
2
NF – Noise figure [dB]
VG2S = 0.5V
1
0
–1.7 –1.5 –1.3 –1.1
–1.8 –1.6 –1.4 –1.2 –1.0 –0.9
VG1S – Gate 1 to source voltage [V]
NF, Ga vs. ID
3.0
(VDS = 5V, VG2S = 1.5V, f = 800MHz)
2.5
Ga
2.0
1.5
1.0
NF – Noise figure [dB]
0.5
NF
1.0V
1.5V
30
25
20
15
10
5
Ga – Gain [dB]
Ga – Gain [dB]
NFmin – Minimum noise figure [dB]
15
10
5
0
–1.8 –1.6 –1.4 –1.2 –1.0 –0.9–1.7 –1.5 –1.3 –1.1
VG1S – Gate 1 to source voltage [V]
NF, Ga vs. f
3.0
(VDS = 5V, VG2S = 1.5V, ID = 10mA)
2.5
Ga
2.0
1.5
1.0
NFmin
0.5
30
25
20
15
Ga – Gain [dB]
10
5
0
2 6 10 14
0 4 8 12162022
18
ID – Drain current [mA]
0
0
0.4 1.2 2.0
0 0.8 1.6 2.2
0.6 1.40.2 1.0 1.8
0
f – Frequency [GHz]
– 3 –
3SK166A
S-parameter vs. Frequency Characteristics (VDS = 5V, VG2S = 1.5V, ID = 10mA) (Z0 = 50Ω)
f
(MHz)
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
S11
MAG ANG
0.996
0.988
0.969
0.948
0.927
0.899
0.873
0.845
0.816
0.785
0.754
0.723
0.694
0.669
0.643
0.621
0.601
0.583
0.565
0.545
–5.0
–9.8
–14.8
–19.8
–24.6
–29.3
–33.5
–37.5
–41.2
–44.5
–47.6
–50.3
–53.2
–55.6
–58.1
–60.4
–62.3
–64.5
–66.6
–68.1
S21
MAG ANG
3.807
3.783
3.726
3.670
3.602
3.507
3.414
3.333
3.244
3.146
3.061
2.965
2.874
2.800
2.709
2.636
2.545
2.464
2.364
2.283
172.8
165.5
158.4
151.5
144.5
137.9
131.4
125.2
118.9
112.8
106.9
101.2
95.4
90.0
84.2
78.5
72.8
67.0
61.3
55.8
S12
MAG ANG
0.002
0.005
0.007
0.009
0.010
0.011
0.013
0.013
0.015
0.016
0.016
0.016
0.017
0.017
0.018
0.018
0.020
0.022
0.026
0.028
86.5
87.7
87.3
85.6
81.9
84.3
83.5
82.3
86.3
86.8
88.0
92.4
95.8
97.9
103.3
111.5
119.2
129.3
132.1
136.6
S22
MAG ANG
0.936
0.933
0.930
0.927
0.925
0.922
0.923
0.921
0.926
0.924
0.920
0.921
0.921
0.924
0.925
0.926
0.927
0.924
0.915
0.912
–1.9
–4.0
–6.1
–8.2
–10.2
–12.1
–14.2
–16.3
–18.2
–20.3
–22.3
–24.4
–26.5
–28.9
–31.4
–33.9
–36.9
–39.5
–42.4
–45.0
Noise Figure Characteristics (VDS = 5V, VG2S = 1.5V, ID = 10mA)
f
(MHz)
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
NFmin
(dB)
0.29
0.41
0.52
0.64
0.75
0.86
0.97
1.07
1.18
1.28
1.39
1.49
1.59
1.68
1.78
1.88
1.97
2.06
2.15
Gamma Optimum
ANG
0.89
0.85
0.81
0.77
0.73
0.70
0.67
0.64
0.61
0.59
0.57
0.54
0.52
0.50
0.48
0.45
0.43
0.40
0.38
MAG
7.3
10.6
13.7
16.7
19.5
22.3
24.9
27.5
30.1
32.6
35.2
37.8
40.5
43.3
46.3
49.3
52.6
56.0
59.7
Rn
(Ω)
30.3
29.7
29.2
28.7
28.3
27.8
27.4
27.0
26.7
26.3
26.0
25.8
25.5
25.3
25.1
25.0
24.9
24.8
24.7
– 4 –
Package Outline Unit: mm
( 0.95 )
3SK166A
M-254
2.9 ± 0.2
1.9
( 0.95 )
+ 0.2
1.1 – 0.1
0.6
3
2
0.4 – 0.05
( 0.95 )
SONY CODE
EIAJ CODE
JEDEC CODE
+ 0.1
+ 0.2
2.8 ± 0.2
4
1.8
1
+ 0.1
0.6 – 0.05
( 0.85 )
1.6 – 0.1
0 to 0.1
+ 0.1
0.10 – 0.01
1. Source
2. Gate1
3. Gate2
4. Drain
M-254
PACKAGE MASS
0.01g
– 5 –
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