Datasheet 2SK2483 Datasheet (NEC)

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

DESCRIPTION

The 2SK2483 is N-Channel MOS Field Effect Transistor designed

for high voltage switching applications.

2SK2483

PACKAGE DIMENSIONS

(in millimeter)

FEATURES

• Low On-Resistance

RDS (on) = 2.8 Ω (VGS = 10 V, ID = 2.0 A)

• Low Ciss Ciss = 1 200 pF TYP.

• High Avalanche Capability Ratings

• Isolated TO-220 Package

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

Drain to Source Voltage
Gate to Source Voltage V
Drain Current (DC) ID(DC) ±3.5 A
Drain Current (pulse)* ID(pulse) ±10.5 A
Total Power Dissipation (T
Total Power Dissipation (TA = 25 ˚C) PT2 2.0 W
Channel Temperature Tch 150 ˚C
Storage Temperature T
Single Avalanche Current** IAS 3.5 A
Single Avalanche Energy** EAS 147 mJ

µ

* PW ≤ 10
** Starting Tch = 25 ˚C, R G = 25 Ω, VGS = 20 V → 0

s, Duty Cycle ≤ 1 %

c = 25 ˚C) PT1 40 W

VDSS 900 V

GSS ±30 V

stg –55 to +150 ˚C

10.0±0.3 4.5±0.2

15.0±0.3

0.7±0.1

2.54

123

MP-45F (ISOLATED TO-220)

3.2±0.2

3±0.14±0.2

1.5±0.2

2.54

Drain

2.7±0.2

12.0±0.213.5MIN.

2.5±0.11.3±0.2

0.65±0.1

1. Gate

2. Drain

3. Source

Document No. D10275EJ1V0DS00 (1st edition)
Date Published September 1995 P
Printed in Japan

Gate

Source

Body
Diode

©

1995

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

2SK2483

CHARACTERISTIC SYMBOL MIN. TYP. MAX. TEST CONDITIONS
Drain to Source On-Resistance RDS (on) 2.8 VGS = 10 V, ID = 2.0 A
Gate to Source Cutoff Voltage VGS (off) 2.5 3.5 VDS = 10 V, ID = 1 mA
Forward Transfer Admittance | yfs | 1.0 VDS = 20 V, ID = 2.0 A
Drain Leakage Current IDSS 100 VDS = VDSS, VGS = 0
Gate to Source Leakage Current IGSS ±100 VGS = ±30 V, VDS = 0
Input Capacitance Ciss 1 200 VDS = 10 V
Output Capacitance Coss 170 VGS = 0
Reverse Transfer Capacitance Crss 30 f = 1 MHz
Turn-On Delay Time td (on) 20 ID = 2.0 A
Rise Time tr 10 VGS = 10 V
Turn-Off Delay Time td (off) 70 VDD = 150 V
Fall Time tf 15 RG = 75 Ω
Total Gate Charge QG 40 ID = 3.5 A
Gate to Source Charge QGS 7VDD = 450 V
Gate to Drain Charge QGD 17 VGS = 10 V
Body Diode Forward Voltage VF (S-D) 0.9 IF = 3.5 A, VGS = 0
Reverse Recovery Time trr 580 IF = 3.5 A, VGS = 0
Reverse Recovery Charge Qrr 3.0 di/dt = 50 A/µs

UNIT

Ω

V
S

µ

A
nA
pF
pF
pF

ns
ns
ns

ns
nC
nC
nC

V

ns

µ

C

Test Circuit 1 Avalanche Capability

D.U.T.

R

G

= 25 Ω

PG

VGS = 20 - 0 V

50 Ω

BV

DSS

I

AS

I

D

V

DD

V

Starting T

Test Circuit 3 Gate Charge

D.U.T.

I

G

PG.

= 2 mA

50 Ω

R

V

Test Circuit 2 Switching Time

L

R

V

DD

PG.

V

GS

G

R

G

= 10 Ω

L

R

V

DD

0

D.U.T.

DS

t

t = 1us

ch

L

DD

Duty Cycle ≤ 1 %

V

GS

Wave Form

I

D

Wave Form

V

GS

10 %

0

I

D

90 %

10 %

0

td (on) tr td (off) tf

ton toff

90 %

GS (on)

V

90 %

ID

10 %

The application circuits and their parameters are for references only and are not intended for use in actual design-in's.

2

TYPICAL CHARACTERISTICS (TA = 25 ˚C)

2SK2483

DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA

100

80

60

40

20

dT - Percentage of Rated Power - %

0

20 40 60 80 100 120 140 160

TC - Case Temperature - ˚C

FORWARD BIAS SAFE OPERATING AREA

100

PW = 100 s

I

10

Limited

DS(on)

R

1

- Drain Current - A

D

I

I

D(DC)

Power Dissipation Limited

D(pulse)

10 ms

100 ms

1 ms

TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE

70

60

50

40

30

20

- Total Power Dissipation - W

T

10

P

0

40 60 80 100 120 140 160

20

TC - Case Temperature - ˚C

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE

10

µ

V

GS

= 20 V

10 V

5

- Drain Current - A

D

I

8 V
6 V

Pulsed

TC = 25 ˚C
Single Pulse

0.1
1

10 100 1000

VDS - Drain to Source Voltage - V

FORWARD TRANSFER CHARACTERISTICS

100

10

1.0

- Drain Current - A

D

I

0.1

0

TA = –25 ˚C

25 ˚C
75 ˚C

125 ˚C

51015

VGS - Gate to Source Voltage - V

Pulsed

0

4

8

12

16

VDS - Drain to Source Voltage - V

3

1 000

100

2SK2483

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

10

1

0.1

0.01

- Transient Thermal Resistance - ˚C/W

th(t)

r

0.001

µµ

100

1 m 10 m 100 m 1 10 100 1 000 10

FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT

100

10

TA = –25 ˚C

25 ˚C
75 ˚C

125 ˚C

1.0

VDS = 10 V
Pulsed

PW - Pulse Width - s

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE

7

6
5

4
3

2

R

ID = 6 A

3 A
2 A

1.5 A

th(ch-c)

=3.125(˚C/W)

Single Pulse
T

c

= 25 ˚C

Pulsed

| - Forward Transfer Admittance - S

fs

0.1

| y

0.01

0.1

ID - Drain Current - A

DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT

7
6

5
4

3
2

1

- Drain to Source On-State Resistance - Ω

DS(on)

R

0

0.1
ID - Drain Current - A

1.0 10

1.0 10

Pulsed

GS =

10 V

V

1

- Drain to Source On-State Resistance - Ω

04

DS(on)

R

2 6 10 14

VGS - Gate to Source Voltage - V

812

GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE

VDS = 10 V
I

D

= 1 mA

3

- Gate to Source Cutoff Voltage - V

2

GS(off)

V

–50

0 50 100 150

Tch - Channel Temperature - ˚C

4

2SK2483

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE

4

ID = 3 A

3

2 A

2

- Drain to Source On-State Resistance - Ω

DS(on)

R

1

–50

0

50

Tch - Channel Temperature - ˚C

GS

V
Pulsed

100 150

= 10 V

CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE

10 000

1 000

- Capacitance - pF

rss

, C

100

oss

, C

iss

C

10

0.1
VDS - Drain to Source Voltage - V

1 10 100

VGS = 0
f = 1 MHz

SOURCE TO DRAIN DIODE
FORWARD VOLTAGE

Pulsed

100

10

1

- Diode Forward Current - A

SD

0.1

I

0

VGS = 10 V

0.5

VGS = 0 V

1.0

1.5

VSD - Source to Drain Voltage - V

SWITCHING CHARACTERISTICS

1 000

t
t

t

DD

V

GS

V
R

G

r

f

t

= 10 Ω

d(off)

d(on)

= 150 V
= 10 V

C

iss

100

- Switching Time - ns

C

oss

C

rss

f

, t

d(off)

, t

r

, t

d(on)

t

10

1.0

0.1

1.0 10 100

ID - Drain Current - A

REVERSE RECOVERY TIME vs.
DRAIN CURRENT

10 000

1 000

100

- Reverse Recovery time - ns

rr

t

10

0.1

1.0 10 100

ID - Drain Current - A

di/dt = 50 A/ s

GS

V

= 0

µ

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

16
14
12
10

VDD = 450 V

8
6
4

- Gate to Source Voltage - V

GS

V

2

0

10 20 30 40

Qg - Gate Charge - nC

300 V
150 V

ID = 3.5 A

5

2SK2483

SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD

100

10

IAS = 3.5 A

1.0

- Single Avalanche Current - A

VDD = 150 V
V

GS

RG = 25 Ω

100

µ

= 20 V → 0

1 m 1 0 m 100 m

L - Inductive Load - H

AS

I

E

AS

= 147 mJ

SINGLE AVALANCHE ENERGY
DERATING FACTOR

160
140

120

100

80
60

40

Energy Derating Factor - %

20

0

50 75 100 125 150

25

Starting Tch - Starting Channel Temperature - ˚C

VDD = 150 V
R

G

V

GS

I

AS

= 25 Ω

= 20 V → 0

≤ 3.5 A

175

6

2SK2483

REFERENCE

Document Name Document No.
NEC semiconductor device reliability/quality control system. TEI-1202
Quality grade on NEC semiconductor devices. IEI-1209
Semiconductor device mounting technology manual. IEI-1207
Semiconductor device package manual. IEI-1213
Guide to quality assurance for semiconductor devices. MEI-1202
Semiconductor selection guide. MF-1134
Power MOS FET features and application switching power supply. TEA-1034
Application circuits using Power MOS FET. TEA-1035
Safe operating area of Power MOS FET. TEA-1037

7

2SK2483

[MEMO]

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consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.

Standard: Computers, office equipment, communications equipment, test and measurement equipment,

audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots

Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster

systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)

Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life

support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.

M4 94.11

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