Datasheet 2SK2482 Datasheet (NEC)

Body
Diode

Source

Drain

Gate

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

DESCRIPTION

The 2SK2482 is N-Channel MOS Field Effect Transistor designed

for high voltage switching applications.

2SK2482

PACKAGE DIMENSIONS

(in millimeter)

FEATURES

• Low On-Resistance

RDS (on) = 4.0 Ω (VGS = 10 V, ID = 3.0 A)

• Low Ciss Ciss = 900 pF TYP.

• High Avalanche Capability Ratings

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

Drain to Source Voltage
Gate to Source Voltage VGSS ±30 V
Drain Current (DC) I
Drain Current (pulse)* ID (pulse) ±12 A
Total Power Dissipation (Tc = 25 ˚C) PT1 100 W
Total Power Dissipation (T
Channel Temperature Tch 150 ˚C
Storage Temperature Tstg –55 to +150 ˚C
Single Avalanche Current** I
Single Avalanche Energy** EAS 73.5 mJ

* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting T

ch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0

A = 25 ˚C) PT2 3.0 W

VDSS 900 V

D (DC) ±5.0 A

AS 5.0 A

15.7 MAX.

1.06.0

123

19 MIN. 20.0±0.2

3.0±0.2

5.45 5.45

4

1.0±0.2

MP-88

3.2±0.2

4.5±0.2

1. Gate

2. Drain

3. Source

4. Fin (Drain)

4.7 MAX.

1.5

7.0

2.8±0.10.6±0.12.2±0.2

Document No. D10274EJ1V0DS00 (1st edition)
Date Published August 1995 P
Printed in Japan

©

1995

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

2SK2482

CHARACTERISTIC SYMBOL MIN. TYP. MAX. TEST CONDITIONS
Drain to Source On-Resistance RDS (on) 3.2 4.0 VGS = 10 V, ID = 3.0 A
Gate to Source Cutoff Voltage VGS (off) 2.5 3.5 VDS = 10 V, ID = 1 mA
Forward Transfer Admittance | yfs | 1.0 VDS = 20 V, ID = 3.0 A
Drain Leakage Current IDSS 100 VDS = VDSS, VGS = 0
Gate to Source Leakage Current IGSS ±100 VGS = ±30 V, VDS = 0
Input Capacitance Ciss 900 VDS = 10 V
Output Capacitance Coss 130 VGS = 0
Reverse Transfer Capacitance Crss 25 f = 1 MHz
Turn-On Delay Time td (on) 17 ID = 3.0 A
Rise Time tr 8VGS = 10 V
Turn-Off Delay Time td (off) 60 VDD = 150 V

Fall Time tf 10 RG = 10 Ω
Total Gate Charge QG 30 ID = 5.0 A

Gate to Source Charge QGS 5VDD = 450 V
Gate to Drain Charge QGD 13 VGS = 10 V
Body Diode Forward Voltage VF (S-D) 1.0 IF = 5.0 A, VGS = 0
Reverse Recovery Time trr 780 IF = 5.0 A, VGS = 0

Reverse Recovery Charge Qrr 4.2

UNIT

Ω

V
S

µ

A

nA
pF
pF
pF

ns
ns
ns

ns
nC
nC
nC

V

ns

µ

C

di/dt = 50 A/µs

Test Circuit 1 Avalanche Capability

D.U.T.

R

G

= 25 Ω

PG

VGS = 20 - 0 V

50 Ω

BV

DSS

I

AS

I

D

V

DD

V

DS

Starting T

L

DD

V

ch

Test Circuit 2 Switching Time

D.U.T.

R

PG.

V

GS

0

t

t = 1 us
Duty Cycle ≤ 1 %

G

= 10 Ω

R

G

V

V

GS

Wave Form

I

D

Wave Form

GS

10 %

0

I

D

90 %

10 %

0

t

d (on)trtd (off)tf

t

on

90 %

GS (on)

V

90 %

I

D

10 %

t

off

R

L

V

DD

Test Circuit 3 Gate Charge

D.U.T.

I

G

= 2 mA

PG.

50

Ω

The application circuits and their parameters are for references only and are not intended for use in actual design-in's.

R

L

V

DD

2

TYPICAL CHARACTERISTICS (TA = 25 ˚C)

2SK2482

DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA

100

80

60

40

20

dT - Percentage of Rated Power - %

0

20 40 60 80 100 120 140 160

T

C

- Case Temperature - ˚C

FORWARD BIAS SAFE OPERATING AREA

100

10

= 10 V)

GS

I

D(DC)

Power Dissipation Limited

Limited (at V

DS(on)

1

- Drain Current - A

D

I

R

I

D(pulse)

10 ms

PW = 100 s

1 ms

TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE

140

120

100

80

60

40

- Total Power Dissipation - W

T

20

P

0

40 60 80 100 120 140 160

20

T

C

- Case Temperature - ˚C

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE

Pulsed

10

µ

VGS = 20 V

10 V

8 V

5

- Drain Current - A

D

I

6 V

TC = 25 ˚C
Single Pulse

0.1
1

10 100 1000

V

DS

- Drain to Source Voltage - V

FORWARD TRANSFER CHARACTERISTICS

100

TA = –25 ˚C

25 ˚C

10

75 ˚C

125 ˚C

1.0

- Drain Current - A

D

I

0.1

0

51015

V

GS

- Gate to Source Voltage - V

Pulsed

VDS = 10 V

0

10

V

DS

- Drain to Source Voltage - V

20

30

40

3

1 000

2SK2482

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

100

10

1

0.1

- Transient Thermal Resistance - ˚C/W

0.01

th(t)

r

0.001
10

µ

100

FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT

100

10

TA = –25 ˚C

25 ˚C
75 ˚C

125 ˚C

1.0

R

th(ch-a)

R

th(ch-c)

= 1.25 (˚C/W)

1 m 10 m 100 m 1 10 100 1 000

µ

PW - Pulse Width - s

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE

V

DS

= 20 V

Pulsed

10

ID = 5 A

5

2.5 A
1 A

= 41.7 (˚C/W)

Single Pulse

c

= 25 ˚C

T

Pulsed

| - Forward Transfer Admittance - S

fs

0.1

| y

0.01

0.1

D

- Drain Current - A

I

DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT

8
7

6
5

4
3
2
1

- Drain to Source On-State Resistance - Ω

DS(on)

R

0

0.1

1.0

D

- Drain Current - A

I

10 100

1.0 10

Pulsed

GS

=10 V

V

- Drain to Source On-State Resistance - Ω

DS(on)

R

0

10

GS

- Gate to Source Voltage - V

V

GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE

5

- Gate to Source Cutoff Voltage - V

GS(off)

0

V

–50

0 50 100 150

ch

- Channel Temperature - ˚C

T

20 30

VDS = 10 V

D

= 1 mA

I

4

2SK2482

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE

5

0

–50

RDS(on) - Drain to Source On-State Resistance - Ω

0

ch - Channel Temperature - ˚C

T

50

100 150

CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE

10 000

1 000

100

V

GS = 10 V

D = 3 A

I

VGS = 0
f = 1 MHz

Ciss

SOURCE TO DRAIN DIODE
FORWARD VOLTAGE

100

10

1

VGS = 10 V

0.1

ISD - Diode Forward Current - A

0

0.5

SD - Source to Drain Voltage - V

V

SWITCHING CHARACTERISTICS

1 000

100

10

VGS = 0 V

1.0

td(on)
tr

td(off)
tf

Pulsed

1.5

Ciss, Coss, Crss - Capacitance - pF

10

1.0

10 100 1000

DS - Drain to Source Voltage - V

V

REVERSE RECOVERY TIME vs.
DRAIN CURRENT

10 000

1 000

100

trr - Reverse Recovery time - ns

10

0.1

1.0 10 100

D - Drain Current - A

I

Crss

di/dt = 50 A/ s

GS = 0

V

Coss

V

DD = 150 V
GS = 10 V

td(on), tr, td(off), tf - Switching Time - ns

1.0

0.1

1.0 10 100

D - Drain Current - A

I

V

G = 10 Ω

R

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

µ

16

ID = 5.0 A

14
12
10

8

VDD = 450 V

300 V
150 V

6
4

VGS - Gate to Source Voltage - V

2
0

0

8 1624324 122028

g - Gate Charge - nC

Q

5

2SK2482

SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD

100

10

IAS = 5 A

1.0

VDD = 150 V

IAS - Single Avalanche Current - A

VGS = 20 V → 0

0.1

RG = 25 Ω

100

µ

1 m 10 m 100 m

L - Inductive Load - H

E

AS

= 73.5 mJ

SINGLE AVALANCHE ENERGY
DERATING FACTOR

160
140

120

100

80
60

40

Energy Derating Factor - %

20

0

50 75 100 125 150

25

Starting T

ch - Starting Channel Temperature - ˚C

VDD = 150 V
R

G

= 25 Ω

V

GS

= 20 V → 0

≥

I

AS

5.0 A

6

2SK2482

REFERENCE

Document Name Document No.
NEC semiconductor device reliability/quality control system. TEI-1202
Quality grade on NEC semiconductor devices. IEI-1209
Semiconductor device mounting technology manual. IEI-1207
Semiconductor device package manual. IEI-1213
Guide to quality assurance for semiconductor devices. MEI-1202
Semiconductor selection guide. MF-1134
Power MOS FET features and application switching power supply. TEA-1034
Application circuits using Power MOS FET. TEA-1035
Safe operating area of Power MOS FET. TEA-1037

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2SK2482

[MEMO]

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document.
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property rights of third parties by or arising from use of a device described herein or any other liability arising
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copyrights or other intellectual property rights of NEC Corporation or others.
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the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.

Standard: Computers, office equipment, communications equipment, test and measurement equipment,

audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots

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systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)

Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life

support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.

M4 94.11

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