Datasheet 2SK2315 Datasheet (HIT)

2SK2315

Silicon N-Channel MOS FET

Application

High speed power switching

Features

• Low on-resistance

• High speed switching

• Low drive current

• 2.5 V gate drive device can be driven from 3 V source.

• Suitable for DC-DC converter, motor drive, power switch, solenoid drive

Outline

UPAK

G

1

2

3

4

D

1. Gate

2. Drain

3. Source

4. Drain

S

2SK2315

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*

DSS

GSS

D

D(pulse)

DR

1

*

2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %

2. When using the alumina ceramic board (12.5 × 20 × 0.7mm)

3. Marking is “TY”

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown

V

(BR)DSS

voltage
Gate to source breakdown

V

(BR)GSS

voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state

R

GSS

DSS

GS(off)

DS(on)

resistance

Forward transfer admittance |yfs| 1.5 1.8 — S ID = 1 A

Input capacitance Ciss — 173 — pF VDS = 10 V
Output capacitance Coss — 85 — pF VGS = 0
Reverse transfer capacitance Crss — 23 — pF f = 1 MHz
Turn-on time t
Turn-off time t

on

off

Note 1. Pulse Test

60 — — V ID = 10 mA, VGS = 0

±20 — — V IG = ±100 µA, VDS = 0

——±5µAVGS = ±16 V, VDS = 0
——5 µAVDS = 50 V, VGS = 0

0.5 — 1.5 V ID = 1 mA, VDS = 10 V
— 0.4 0.6 Ω ID = 0.3 A

— 0.35 0.45 Ω ID = 1 A

— 21 — ns ID = 1 A, RL = 30 Ω
— 85 — ns VGS = 10 V

60 V
±20 V
2A
4A
2A
1W

= 3 V*

= 4 V*

= 10 V*

1

1

1

V

GS

V

GS

V

DS

2

2SK2315

Power vs. Temperature Derating

1.6

1.2

0.8

0.4

Channel Dissipation Pch** (W)

(** on the almina ceramic board)

0

50 100 150 200

Ambient Temperature Ta (°C)

Typical Output Characteristics

5

10 V

5 V

4

D

4 V

3.5 V

Ta = 25 °C
Pulse Test

3 V

3

Maximum Safe Operation Area

5

100 µs

2
1

D

0.5

0.2
Operation in

0.1
this area is

limited by R

0.05

Drain Current I (A)

0.02

0.01

0.005

0.2 0.5 1 2 5 10 20 50 100 200

DC Operation

DS(on)

Ta = 25 °C
1 shot pulse

1 ms

PW = 10 ms

Drain to Source Voltage V (V)

Typical Transfer Characteristics

5

4

Tc = 75 °C

D

3

25 °C

–25 °C

DS

2

Drain Current I (A)

1

V = 1.5 V

GS

0

246810

Drain to Source Voltage V (V)

2.5 V

2 V

DS

2

Drain Current I (A)

1

0

12345

Gate to Source Voltage V (V)

V = 10 V

DS

Pulse Test

GS

3

2SK2315

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

1.0
Pulse Test

0.8

DS(on)

V (V)

0.6

Ta = 25 °C

I = 2 A

D

0.4

1 A

0.2

0.5 A

Drain to Source Saturation Voltage

0

4 8 12 16 20

Gate to Source Voltage V (V)

GS

Static Drain to Source on State Resistance

vs. Temperature

1.0

Ω

0.8
I = 2 A

DS(on)

R ( )

D

0.6

V = 3 V

GS

1 A

0.5 A

0.4

I = 2 A

0.2

V = 10 V

GS

D

0

Static Drain to Source on State Resistance

–40 0 40 80 120 160

Case Temperature Tc (°C)

1 A

0.5 A

Static Drain to Source State Resistance

vs. Drain Current

5

Ω

DS(on)

R ( )

0.5

2

1

Ta = 25 °C
Pulse Test

V = 3 V

GS

10 V

0.2

0.1

Drain to Source On State Resistance

0.05

0.1

0.2 0.5 1 2 5 10
Drain Current I (A)

D

Forward Transfer Admittance vs.

Drain Current

10

5

Tc = –25 °C

25 °C

2

75 °C

1

0.5
V = 10 V

DS

0.2

Forward Transfer Admittance |yfs| (S)

0.1

Pulse Test

0.1 0.2 0.5 1 2 5 10
Drain Current I (A)

D

4

Typical Capacitance vs.
Drain to Source Voltage

1000

Ciss

100

Coss

Crss

10

Capacitance C (pF)

V = 0

GS

f = 1 MHz

1

0

10 20 30 40 50

Drain to Source Voltage V (V)

Switching Characteristics

200

100

t

d(off)

50

t

20

10

Switching Time t (ns)

5

2

f

t

r

t

V = 10 V, PW = 2 µs

GS

V = 30 V, duty < 1 %

DD

0.05 0.1 0.2 0.5 1 2 5
Drain Current I (A)

D

DS

d(on)

100

Dynamic Input Characteristics

V

V = 50 V

DS

80

DD

25 V
10 V

60

V

DS

40

20

V = 50 V

DD

I = 2 A

D

25 V

Drain to Source Voltage V (V)

0

246810

10 V

Gate Charge Qg (nc)

Reverse Drain Current vs.

Souece to Drain Voltage

5

Pulse Test

4

DR

3

10 V

2

1

5 V

V = 0

GS

Reverse Drain Current I (A)

0

0.4 0.8 1.2 1.6 2.0

Source to Drain Voltage V (V)

2SK2315

GS

SD

20

16

GS

12

8

4

Gate to Source Voltage V (V)

0

5

Unit: mm

0.53 Max

0.48 Max

4.5 ± 0.1

1.8 Max

1.5

1.5

3.0

1.5 ± 0.1

0.4

φ

1

0.44 Max

(1.5)

(2.5)

2.5 ± 0.1

4.25 Max

0.44 Max

(0.4)

(0.2)

0.8 Min

Hitachi Code
JEDEC
EIAJ
Weight

(reference value)

UPAK
—
Conforms

0.050 g

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