Datasheet 2SK2225 Datasheet (HIT)

Application

High speed power switching

Features

2SK2225

Silicon N-Channel MOS FET

ADE-208-140

1st. Edition

• High breakdown voltage (V

• High speed switching

• Low drive current

• No Secondary Breakdown

• Suitable for Switching regulator, DC-DC converter

= 1500 V)

DSS

Outline

TO-3PFM

D

G

S

1

2

3

1. Gate

2. Drain

3. Source

2SK2225

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*

DSS

GSS

D

D(pulse)

DR

1

*

2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %

2. Value at Tc = 25 °C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Drain to source breakdown

V

(BR)DSS

voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state

R

GSS

DSS

GS(off)

DS(on)

resistance
Forward transfer admittance |yfs| 0.45 0.75 — S ID = 1 A

Input capacitance Ciss — 990 — pF VDS = 10 V
Output capacitance Coss — 125 — pF VGS = 0
Reverse transfer capacitance Crss — 60 — pF f = 1 MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward

V

d(on)

r

d(off)

f

DF

voltage
Body to drain diode reverse

t

rr

recovery time
Note 1. Pulse Test

1500 — — V ID = 10 mA, VGS = 0

——±1µAVGS = ±20 V, VDS = 0
— — 500 µAVDS =1200 V, VGS = 0

2.0 — 4.0 V ID = 1 mA, VDS = 10 V
—9 12Ω I

— 17 — ns ID = 1 A
— 50 — ns VGS = 10 V
— 150 — ns RL = 30 Ω
—50—ns
— 0.9 — V IF = 2 A, VGS = 0

— 1750 — ns IF = 20 A, VGS = 0,

1500 V
±20 V
2A
7A
2A
50 W

= 1 A

D

V

= 15 V*

GS

V

= 20 V*

DS

di

/ dt = 100 A / µs

F

1

1

2

2SK2225

Power vs. Temperature Derating

80

60

40

20

Channel Dissipation Pch (W)

0

50 100 150 200

Case Temperature Tc (°C)

Typical Output Characteristics

D

5

4

Pulse Test

15 V

3

10 V

7 V

8 V

Maximum Safe Operation Area

10

3

D

1

PW = 10 ms (1shot)

DC Operation (Tc = 25 °C)

10 µs

100 µs

1 ms

0.3

Operation in

0.1

this area is

Drain Current I (A)

limited by R

DS(on)

0.03
Ta = 25 °C

0.01

10 30 100 300 1000 3000 10000

Drain to Source Voltage V (V)

DS

Typical Transfer Characteristics

2.0

V = 25 V

1.6

D

1.2

DS

Pulse Test

2

Drain Current I (A)

1

V = 4 V

0

20 40 60 80 100

Drain to Source Voltage V (V)

GS

6 V

5 V

DS

0.8

Drain Current I (A)

0.4

0

246810

Gate to Source Voltage V (V)

Tc = 75 °C

25 °C

–25 °C

GS

3

2SK2225

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

50

Pulse Test

40

DS(on)

V (V)

I = 3 A

30

20

10

Drain to Source Saturation Voltage

0

4 8 12 16 20

Gate to Source Voltage V (V)

Static Drain to Source on State Resistance

vs. Temperature

20

Ω

I = 2 A

16

DS(on)

R ( )

D

12

D

2 A

1 A

0.5 A

GS

0.5 A, 1 A

Static Drain to Source State Resistance

vs. Drain Current

50

Ω

20

10

DS(on)

R ( )

V = 10 V

GS

5

2

Pulse Test

1

Drain to Source On State Resistance

0.5

0.1

0.2 0.5 1 2 5 10
Drain Current I (A)

D

Forward Transfer Admittance vs.

Drain Current

10

5

V = 25 V

DS

Pulse Test

2

Tc = –25 °C

1

25 °C
75 °C

15 V

8

4

V = 15 V

GS

Pulse Test

0

Static Drain to Source on State Resistance

–40 0 40 80 120 160

Case Temperature Tc (°C)

4

0.5

0.2

Forward Transfer Admittance |yfs| (S)

0.1

0.05 0.1 0.2 0.5 1 2 5
Drain Current I (A)

D

2SK2225

Body to Drain Diode Reverse

5000

2000

1000

500

Recovery Time

di / dt = 100 A / µs, Ta = 25 °C

200

V = 0, Pulse Test

GS

100

Reverse Recovery Time trr (ns)

50

0.05 0.1 0.2 0.5 1 2 5
Reverse Drain Current I (A)

DR

Dynamic Input Characteristics

1000

V = 250 V

800

DS

600

400

200

V

DD

DS

V = 250 V

DD

400 V
600 V

400 V
600 V

I = 2.5 A

D

Drain to Source Voltage V (V)

0

20 40 60 80 100

Gate Charge Qg (nc)

Typical Capacitance vs.
Drain to Source Voltage

10000

V = 0

GS

f = 1 MHz

1000

100

Capacitance C (pF)

Ciss

Coss

Crss

10

0

10 20 30 40 50

Drain to Source Voltage V (V)

DS

Switching Characteristics

GS

1000

500

200

t

d(off)

V = 10 V

GS

PW = 2 µs
duty < 1 %

20

16

V

GS

12

100

8

50

Switching Time t (ns)

4

0

20

Gate to Source Voltage V (V)

10

0.05 0.1 0.2 0.5 1 2 5

t

f

t

r

t

d(on)

Drain Current I (A)

D

5

2SK2225

Reverse Drain Current vs.

Source to Drain Voltage

5

Pulse Test

4

DR

3

2

1

10 V, 15 V

Reverse Drain Current I (A)

0

0.4 0.8 1.2 1.6 2.0

V = 0, –5 V

GS

Source to Drain Voltage V (V)

SD

3

Normalized Transient Thermal Impedance vs. Pulse Width

s (t)

1

γ

D = 1

0.5

0.3

0.2

0.1

0.1

0.05

0.02

0.03

Normalized Transient Thermal Impedance

0.01

1shot pulse

0.01
10 µ

100 µ 1 m 10 m

Pulse Width PW (S)

Tc = 25°C

θ γ θ

ch – c(t) = s (t) • ch – c

θ

ch – c = 2.50 °C/W, Tc = 25 °C

P

DM

PW
T

D =

100 m 1 10

PW

T

6

Switching Time Test Circuit Waveform

2SK2225

Vin Monitor

Vin
10 V

50Ω

D.U.T.

R

L

V
= 30 V

Vout
Monitor

DD

Vin
Vout

td(on)

10%

10%

90%

tr

90%

td(off)

90%

10%

t

f

7

Unit: mm

4.0

2.6

1.4 Max

5.45 ± 0.5

15.6 ± 0.3

+ 0.4

φ3.2

– 0.2

5.0 ± 0.3

2.7

1.6

1.4 Max

1.0 ± 0.2

5.45 ± 0.5

5.0

5.5 ± 0.3

19.9 ± 0.3

3.2

21.0 ± 0.5

0.6 ± 0.2

Hitachi Code
JEDEC
EIAJ
Weight

(reference value)

TO-3PFM
—
—

5.6 g

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