Datasheet 2SK2221, 2SK2220 Datasheet (HIT)

2SK2220, 2SK2221

Silicon N-Channel MOS FET

Application

Low frequency power amplifier
Complementary pair with 2SJ351, 2SJ352

Features

• High power gain

• Excellent frequency response

• High speed switching

• Wide area of safe operation

• Enhancement-mode

• Good complementary characteristics

• Equipped with gate protection diodes

Outline

TO-3P

G

D

1

2

3

1. Gate

2. Source

S

(Flange)

3. Drain

2SK2220, 2SK2221

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage 2SK2220 V

DSX

2SK2221 200
Gate to source voltage V
Drain current I
Body to drain diode reverse drain current I
Channel dissipation Pch*

GSS

D

DR

1

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Note 1. Value at Tc = 25 °C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions
Drain to source 2SK2220 V
breakdown

2SK2221 200 — —

(BR)DSX

voltage
Gate to source breakdown

V

(BR)GSS

voltage
Gate to source cutoff voltage V

Drain to source saturation

V

GS(off)

DS(sat)

voltage
Forward transfer admittance |yfs| 0.7 1.0 1.4 S ID = 3 A

Input capacitance Ciss — 600 — pF VGS = –5 V
Output capacitance Coss — 800 — pF VDS = 10 V
Reverse transfer capacitance Crss — 8 — pF f = 1 MHz
Turn-on time t
Turn-off time t

on

off

Note 1. Pulse Test

180 — — V ID = 10 mA, VGS = –10 V

±20 — — V IG = ±100 µA, VDS = 0

0.15 — 1.45 V ID = 100 mA

——12V I

— 250 — ns VDD = 30 V
— 90 — ns ID = 4 A

180 V

±20 V
8A
8A
100 W

V

= 10 V

DS

= 8 A, VGD = 0 V*

D

V

DS

= 10 V*

1

1

2

2SK2220, 2SK2221

150

Power vs. Temperature Derating

100

50

Channel Dissipation Pch (W)

0

50 100 150

Case Temperature Tc (°C)

10

(A)

D

Typical Output Characteristics

GS

=

9
8

7

V
10 V

8

6

6

5

Pch = 125 W

T

= 25°C

C

Maximum Safe Operation Area

20

PW = 10 ms (1 Shot)

PW = 100 ms (1 Shot)

(A)

D

10

5

DC Operation (T

2

C

= 25°C)

1.0

Drain Current I

0.5
2SK2220 2SK2221

0.2

5 10 50 200

20 100 500

Drain to Source Voltage V

Typical Output Characteristics

10

TC = 25°C

8

(A)

D

6

Ta = 25°C

DS

V

GS

9

(V)

= 10 V

8

7
6

5

4

Drain Current I

2

10 30 400

Drain to Source Voltage V

4

3

2

01

20 50

(V)

DS

4

Drain Current I

2

2680

Drain to Source Voltage VDS (V)

4
3

2
1

0

410

3

2SK2220, 2SK2221

Typical Transfer Characteristics

10

V

= 10 V

DS

8

(A)

D

6

4

Drain Current I

2

2680

Gate to Source Voltage V

5

1.0

TC = 25°C

0.1
V

I

D

25

= –25°C

C

T

75

410

(V)

GS

Forward Transfer Admittance

vs. Frequency

= 10 V

DS

= 2 A

1.0

Typical Transfer Characteristics

V

DS

(A)

D

0.8

0.6

0.4

Drain Current I

0.2

0.4 1.2 1.60

Gate to Source Voltage V

Switching Time vs. Drain Current

500

200

(ns)

off

t

100

on,

50

= 10 V

T

0.8 2.0

t

on

t

off

= –25°C

C

GS

25

(V)

75

0.01

0.001

Forward Transfer Admittance yfs (S)

0.0005
10 k 20 M

2 k 1 M

100 k 10 M

Frequency f (Hz)

20

Switching Time t

10

5

0.1

0.2 1.0 5

0.5 10

Drain Current I

2

D

(A)

4

2SK2220, 2SK2221

PW = 50 µs
duty ratio
= 1%

Switching Time Test Circuit

Output

R

L

Input

50 Ω

30 V

Input

10%
t

on

Output

90%

Waveforms

90%

t

off

10%

5

1.6

0.5

15.6 ± 0.3

φ3.2 ± 0.2

1.0

2.0

Unit: mm

4.8 ± 0.2

1.5

5.0 ± 0.3

19.9 ± 0.2

14.9 ± 0.2

0.3

1.4 Max

3.6

2.0

0.9

1.0

1.0 ± 0.2

5.45 ± 0.55.45 ± 0.5

18.0 ± 0.5

2.8

0.6 ± 0.2

Hitachi Code
JEDEC
EIAJ
Weight

(reference value)

TO-3P
—
Conforms

5.0 g

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail­safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.

Hitachi, Ltd.

Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo [phone] Fax: [phone]

URL NorthAmerica : http:semiconductor.hitachi.com/

For further information write to:

Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> [phone]
Fax: <1>[phone]

Europe : http://www.hitachi-eu.com/hel/ecg
Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan : http://www.hitachi.co.jp/Sicd/indx.htm

Hitachi Europe GmbH
Electronic components Group
Dornacher Stra§e 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00

Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322

Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: [phone]
Fax: [phone]

Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180

Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.

Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Telex: 40815 HITEC HX