Filterless Class-D amplifier with built-in output stage
2 W into 4 Ω and 1.4 W into 8 Ω at 5.0 V supply with <10% THD
85% efficiency at 5.0 V, 1.4 W into 8 Ω speaker
Better than 98 dB SNR (signal-to-noise ratio)
Available in 16-lead, 3 mm × 3 mm LFCSP
Single-supply operation from 2.5 V to 5.0 V
20 nA ultralow shutdown current
Short-circuit and thermal protection
Pop-and-click suppression
Built-in resistors reduce board component count
Default fixed 18 dB gain and user-adjustable
APPLICATIONS
Notebooks and PCs
Mobile phones
MP3 players
Portable gaming
Portable electronics
Educational toys
GENERAL DESCRIPTION
The SSM2304 is a fully integrated, high efficiency, Class-D stereo
audio amplifier. It is designed to maximize performance for
portable applications. The application circuit requires a minimum of external components and operates from a single 2.5 V
to 5.0 V supply. It is capable of delivering 2 W of continuous
output power with less than 10% THD + N driving a 4 Ω load
from a 5.0 V supply.
Stereo Audio Amplifier
SSM2304
The SSM2304 features a high efficiency, low noise modulation
scheme. It operates with 85% efficiency at 1.4 W into 8 Ω from a
5.0 V supply and has a signal-to-noise ratio (SNR) that is better
than 98 dB. PDM modulation is used to provide lower EMIradiated emissions compared with other Class-D architectures.
The SSM2304 has a micropower shutdown mode with a typical
shutdown current of 20 nA. Shutdown is enabled by applying a
logic low to the
The architecture of the device allows it to achieve a very low level
of pop and click. This minimizes voltage glitches at the output
during turn-on and turn-off, thus reducing audible noise on
activation and deactivation.
The fully differential input of the SSM2304 provides excellent
rejection of common-mode noise on the input. Input coupling
capacitors can be omitted if the dc input common-mode voltage
is approximately V
The SSM2304 also has excellent rejection of power supply noise,
including noise caused by GSM transmission bursts and RF
rectification.
The SSM2304 has a preset gain of 18 dB, which can be reduced
by using external resistors.
The SSM2304 is specified over the commercial temperature range
(−40°C to +85°C). It has built-in thermal shutdown and output
short-circuit protection. It is available in a 16-lead, 3 mm × 3 mm
lead-frame chip scale package (LFCSP).
SD
pin.
/2.
DD
FUNCTIONAL BLOCK DIAGRAM
Rext
Rext
Rext
Rext
SSM2304
INR+
INR–
SD
INL+
INL–
1
RIGHT IN+
RIGHT IN–
SHUTDOWN
LEFT IN+
LEFT IN–
GAIN = 300kΩ/ (47kΩ + Rext)
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
22nF
1
22nF
1
22nF
1
22nF
1
INPUT CAPS ARE OPTIONAL I F INPUT DC COM MON-MODE
VOLTAGE IS APPRO XIMATELY V
VDD = 5.0 V; TA = 25oC; RL = 4 Ω, 8 Ω; gain = 18 dB; unless otherwise noted.
Table 1.
Parameter Symbol Conditions Min Typ Max Unit
DEVICE CHARACTERISTICS
Output Power P
O
R
R
R
R
R
R
R
R
R
R
R
Efficiency η P
P
Total Harmonic Distortion + Noise THD + N PO = 2 W into 4 Ω each channel, f = 1 kHz, VDD = 5.0 V 0.2 %
P
Input Common-Mode Voltage Range V
CM
Common-Mode Rejection Ratio CMRR
Channel Separation
Average Switching Frequency f
Differential Output Offset Voltage V
X
TAL K
SW
OOS
POWER SUPPLY
Supply Voltage Range V
DD
Power Supply Rejection Ratio PSRR VDD = 2.5 V to 5.0 V, 70 85 dB
PSRR
Supply Current I
SY
V
V
Shutdown Current I
SD
GAIN
Closed-Loop Gain Av Rext = 0 18 dB
Differential Input Impedance Z
IN
SHUTDOWN CONTROL
Input Voltage High V
Input Voltage Low V
Turn-On Time t
Turn-Off Time t
Output Impedance Z
IH
IL
WU
SD
OUT
NOISE PERFORMANCE
Output Voltage Noise e
n
Signal-to-Noise Ratio SNR P
RL = 4 Ω, THD = 1%, f = 1 kHz, 20 kHz BW, VDD = 5.0 V 1.8 W
= 8 Ω, THD = 1%, f = 1 kHz, 20 kHz BW, VDD = 5.0 V 1.4 W
L
= 4 Ω, THD = 1%, f = 1 kHz, 20 kHz BW, VDD = 3.6 V 0.9 W
L
= 8 Ω, THD = 1%, f = 1 kHz, 20 kHz BW, VDD = 3.6 V 0.615 W
L
= 4 Ω, THD = 1%, f = 1 kHz, 20 kHz BW, VDD = 2.5 V 0.35 W
L
= 8 Ω, THD = 1%, f = 1 kHz, 20 kHz BW, VDD = 2.5 V 0.275 W
L
= 4 Ω, THD = 10%, f = 1 kHz, 20 kHz BW, VDD = 5.0 V 2.4 W
L
= 8 Ω, THD = 10%, f = 1 kHz, 20 kHz BW, VDD = 5.0 V 1.53 W
L
= 4 Ω, THD = 10%, f = 1 kHz, 20 kHz BW, VDD = 3.6 V 1.1 W
L
= 8 Ω, THD = 10%, f = 1 kHz, 20 kHz BW, VDD = 3.6 V 0.77 W
L
= 4 Ω, THD = 10%, f = 1 kHz, 20 kHz BW, VDD = 2.5 V 0.45 W
L
= 8 Ω, THD = 10%, f = 1 kHz, 20 kHz BW, VDD = 2.5 V 0.35 W
L
= 2 W, 4 Ω, VDD = 5.0 V 75 %
OUT
= 1.4 W, 8 Ω, VDD = 5.0 V 85 %
OUT
= 1 W into 8 Ω each channel, f = 1 kHz, VDD = 3.6 V 0.25 %
O
1.0 VDD − 1 V
GSMVCM
= 2.5 V ± 100 mV at 217 Hz 60 dB
PO = 100 mW , f = 1 kHz 78 dB
1.8 MHz
2.0 mV
Guaranteed from PSRR test 2.5 5.0 V
GSM
V
= 100 mV rms at 217 Hz, inputs ac GND,
RIPPLE
= 0.01 μF, input referred
C
IN
68 dB
VIN = 0 V, no load, VDD = 5.0 V 7.0 mA
= 0 V, no load, VDD = 3.6 V 6.5 mA
IN
= 0 V, no load, VDD = 2.5 V 5.2 mA
IN
SD
= GND
SD
= VDD
20 nA
47 kΩ
ISY ≥ 1 mA 1.2 V
ISY ≤ 300 nA 0.5 V
SD
rising edge from GND to V
SD
falling edge from VDD to GND
SD
= GND
DD
VDD = 3.6 V, f = 20 Hz to 20 kHz, inputs are ac
grounded, A
= 2.0 W, RL = 4 Ω 102 dB
OUT
= 6 dB, RL = 4 Ω, A weighting
V
30 ms
5 μs
>100 kΩ
22 μV
Rev. 0 | Page 3 of 20
SSM2304
ABSOLUTE MAXIMUM RATINGS
Absolute maximum ratings apply at 25°C, unless otherwise noted.
Table 2.
Parameter Rating
Supply Voltage 6 V
Input Voltage V
Common-Mode Input Voltage V
ESD Susceptibility 4 kV
Storage Temperature Range −65°C to +150°C
Operating Temperature Range −40°C to +85°C
Junction Temperature Range −65°C to +165°C
Lead Temperature Range
(Soldering, 60 sec)
DD
DD
300°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL RESISTANCE
θJA is specified for the worst-case conditions, that is, a device
soldered in a circuit board for surface-mount packages.
Table 3. Thermal Resistance
Package Type θ
16-lead, 3 mm × 3 mm LFCSP 44 31.5 °C/W
θ
JA
Unit
JC
ESD CAUTION
Rev. 0 | Page 4 of 20
SSM2304
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
ND
VDD
GND
G
VDD
14
13
16
15
PIN 1
INDICATOR
1OUTL+
2OUTL–
SSM2304
3SD
TOP VIEW
(Not to Scale)
4INL+
5
6
NC
INL–
NC = NO CONNECT
Figure 2. SSM2304 LFCSP Pin Configuration
Table 4. Pin Function Descriptions
Pin No. Mnemonic Description
1 OUTL+ Inverting Output for Left Channel.
2 OUTL− Noninverting Output for Left Channel.
3
SD
Shutdown Input. Active low digital input.
4 INL+ Noninverting Input for Left Channel.
5 INL− Inverting Input for Left Channel.
6 NC No Connect.
7 NC No Connect.
8 INR− Inverting Input for Right Channel.
9 INR+ Noninverting Input for Right Channel.
10 NC No Connect
11 OUTR− Noninverting Output for Right Channel.
12 OUTR+
Inverting Output for Right Channel.
13 GND Ground for Output Amplifiers.
14 VDD Power Supply for Output Amplifiers.
15 VDD Power Supply for Output Amplifiers.
16 GND Ground for Output Amplifiers.
12 OUTR+
11 OU TR–
10 NC
9INR+
8
7
NC
INR–
6162-002
Rev. 0 | Page 5 of 20
SSM2304
TYPICAL PERFORMANCE CHARACTERISTICS
100
10
RL = 4Ω, 33µH
GAIN = 18dB
VDD = 2.5V
100
10
RL = 8Ω, 33µH
GAIN = 6dB
VDD = 2.5V
1
VDD = 3.6V
THD + N (%)
0.01
0.001
0.1
0.00010.0000110
0.0010. 010.11
OUTPUT PO WER (W)
Figure 3. THD + N vs. Output Power into 4 Ω, A
100
RL = 8Ω, 33µH
GAIN = 18dB
10
1
0.1
THD + N (%)
0.01
VDD = 3.6V
VDD = 2.5V
VDD = 5V
= 18 dB
V
VDD = 5V
1
VDD = 3.6V
0.1
THD + N (%)
0.01
0.001
06162-020
0.000010.000000110
0.0010.1
OUTPUT PO WER (W)
Figure 6. THD + N vs. Output Power into 8 Ω, A
100
VDD = 5V
R
= 8Ω, 33µH
L
GAIN = 6dB
10
1
1W
THD + N (%)
0.01
0.001
0.1
0.25W
0.5W
VDD = 5V
= 6 dB
V
06162-004
0.001
0.0000010.00010.0000110
Figure 4. THD + N vs. Output Power into 8 Ω, A
100
RL = 4Ω, 33µH
GAIN = 6dB
10
1
THD + N (%)
0.1
0.01
0.0000010.0001
0.0000001
0.0000110
Figure 5. THD + N vs. Output Power into 4 Ω, A
0.0010.010.11
OUTPUT PO WER (W)
VDD = 2.5V
VDD = 3.6V
VDD = 5V
0.01
0.001
OUTPUT PO WER (W)
0.1
= 18 dB
V
1
= 6 dB
V
06162-003
06162-021
Rev. 0 | Page 6 of 20
0.0001
2020k
Figure 7. THD + N vs. Frequency, V
100
VDD = 3.6V
R
GAIN = 6dB
10
1
0.1
THD + N (%)
0.01
0.125W
0.001
0.0001
2020k
Figure 8. THD + N vs. Frequency, V
1001k10k
FREQUENCY (Hz)
DD
= 8Ω, 33µH
L
0.5W
0.25W
1001k10k
FREQUENCY (Hz)
= 3.6 V, RL = 8 Ω, AV = 6 dB
DD
= 5 V, RL = 8 Ω, AV = 6 dB
06162-005
06162-006
Loading...
+ 14 hidden pages
You need points to download manuals.
1 point = 1 manual.
You can buy points or you can get point for every manual you upload.