Filterless Class-D amplifier with built-in output stage
1.4 W into 8 Ω at 5.0 V supply with less than 1% THD
85% efficiency at 5.0 V, 1.4 W into 8 Ω speaker
Better than 98 dB SNR (signal-to-noise ratio)
Single-supply operation from 2.5 V to 5.0 V
20 nA ultralow shutdown current
Short-circuit and thermal protection
Available in 16-lead, 3 mm × 3 mm LFCSP
Pop-and-click suppression
Built-in resistors reduce board component count
Fixed and user-adjustable gain configurations
APPLICATIONS
Mobile phones
MP3 players
Portable gaming
Portable electronics
Educational toys
GENERAL DESCRIPTION
The SSM2302 is a fully integrated, high efficiency, Class-D stereo
audio amplifier. It is designed to maximize performance for
mobile phone applications. The application circuit requires a
minimum of external components and operates from a single
2.5 V to 5.0 V supply. It is capable of delivering 1.4 W of continuous output power with less than 1% THD + N driving an
8 Ω load from a 5.0 V supply.
The SSM2302 features a high efficiency, low noise modulation
cheme. It operates with 85% efficiency at 1.4 W into 8 Ω from a
s
FUNCTIONAL BLOCK DIAGRAM
Class-D Stereo Audio Amplifier
SSM2302
5.0 V supply and has a signal-to-noise ratio (SNR) that is better
than 98 dB. PDM modulation is used to provide lower EMIradiated emissions compared with other Class-D architectures.
The SSM2302 has a micropower shutdown mode with a typical
utdown current of 20 nA. Shutdown is enabled by applying a
sh
pin.
SD
/2.
DD
VBATT
2.5V TO 5. 0V
mmercial temperature range
10µF
logic low to the
The architecture of the device allows it to achieve a very low level
f pop and click. This minimizes voltage glitches at the output
o
during turn-on and turn-off, thus reducing audible noise on
activation and deactivation.
The fully differential input of the SSM2302 provides excellent
r
ejection of common-mode noise on the input. Input coupling
capacitors can be omitted if the dc input common-mode voltage
is approximately V
The SSM2302 also has excellent rejection of power supply noise,
in
cluding noise caused by GSM transmission bursts and RF
rectification. PSRR is typically 63 dB at 217 Hz.
The gain can be set to 6 dB or 12 dB utilizing the gain control
elect pin connected respectively to ground or V
s
also be adjusted externally by using an external resistor.
The SSM2302 is specified over the co
(−40°C to +85°C). It has built-in thermal shutdown and output
short-circuit protection. It is available in a 16-lead, 3 mm × 3 mm
lead-frame chip scale package (LFCSP).
0.1µF
. Gain can
DD
SSM2302
1
0.01µF
0.01µF
0.01µF
0.01µF
INR+
INR–
1
SD
GAIN
1
INL+
INL–
1
GAIN
CONTROL
GAIN
CONTROL
/2.
DD
BIAS
RIGHT IN+
RIGHT IN–
SHUTDOWN
GAIN
LEFT IN+
LEFT IN–
1
INPUT CAPS ARE OPTIONAL IF INPUT DC COMMON-MODE
VOLTAGE IS APPROXIMATELY V
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
Total Harmonic Distortion + Noise THD + N PO = 1 W into 8 Ω each channel, f = 1 kHz, VDD = 5.0 V 0.1 %
P
Input Common-Mode Voltage Range VCM 1.0 VDD − 1 V
Common-Mode Rejection Ratio CMRR
Channel Separation
X
TAL K
Average Switching Frequency fSW 1.8 MHz
Differential Output Offset Voltage V
OOS
POWER SUPPLY
Supply Voltage Range V
DD
Power Supply Rejection Ratio PSRR VDD = 2.5 V to 5.0 V, 50 Hz, input floating/ground 70 85 dB
PSRR
Supply Current I
SY
V
V
Shutdown Current ISD
GAIN CONTROL
Closed-Loop Gain Av0 GAIN pin = 0 V 6 dB
Av1 GAIN pin = VDD 12 dB
Differential Input Impedance Z
IN
SHUTDOWN CONTROL
Input Voltage High V
Input Voltage Low V
Turn-On Time t
Turn-Off Time t
Output Impedance Z
IH
IL
WU
SD
OUT
NOISE PERFORMANCE
Output Voltage Noise en
Signal-to-Noise Ratio SNR P
RL = 8 Ω, THD = 1%, f = 1 kHz, 20 kHz BW, VDD = 5.0 V 1.4 W
= 8 Ω, THD = 1%, f = 1 kHz, 20 kHz BW, VDD = 3.6 V 0.615 W
L
= 8 Ω, THD = 1%, f = 1 kHz, 20 kHz BW, VDD = 2.5 V 0.275 W
L
= 8 Ω, THD = 10%, f = 1 kHz, 20 kHz BW, VDD = 5.0 V 1.53 W
L
= 8 Ω, THD = 10%, f = 1 kHz, 20 kHz BW, VDD = 3.6 V 0.77 W
L
= 8 Ω, THD = 10%, f = 1 kHz, 20 kHz BW, VDD = 2.5 V 0.35 W
L
=1.4 W, 8 Ω, VDD = 5.0 V 85 %
OUT
= 0.5 W into 8 Ω each channel, f = 1 kHz, VDD = 3.6 V 0.04 %
O
GSM VCM
= 2.5 V ± 100 mV at 217 Hz 55 dB
PO = 100 mW , f = 1 kHz 98 dB
G = 6 dB; G = 12 dB 2.0 mV
Guaranteed from PSRR test 2.5 5.0 V
GSM
V
= 100 mV at 217 Hz, inputs ac GND,
RIPPLE
= 0.01 μF, input referred
C
IN
63 dB
VIN = 0 V, no load, VDD = 5.0 V 8.0 mA
= 0 V, no load, VDD = 3.6 V 6.6 mA
IN
= 0 V, no load, VDD = 2.5 V 5.3 mA
IN
SD
= GND
SD
= VDD,
SD
= GND
20 nA
150 KΩ
210 KΩ
ISY ≥ 1 mA 1.2 V
ISY ≤ 300 nA 0.5 V
SD
rising edge from GND to VDD
SD
falling edge from VDD to GND
SD
= GND
= 2.5 V to 5.0 V, f = 20 Hz to 20 kHz, inputs are
V
DD
ac grounded, sine wave, A
= 1.4 W, RL = 8 Ω 98 dB
OUT
= 6 dB, A weighting
V
30 ms
5 μs
>100 KΩ
35 μV
Rev. 0 | Page 3 of 20
SSM2302
www.BDTIC.com/ADI
ABSOLUTE MAXIMUM RATINGS
Absolute maximum ratings apply at 25°C, unless otherwise noted.
Table 2.
Parameter Rating
Supply Voltage 6 V
Input Voltage V
Common-Mode Input Voltage V
Storage Temperature Range −65°C to +150°C
Operating Temperature Range −40°C to +85°C
Junction Temperature Range −65°C to +165°C
Lead Temperature Range
(Soldering, 60 sec)
DD
DD
300°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL RESISTANCE
θJA is specified for the worst-case conditions, that is, a device
soldered in a circuit board for surface-mount packages.
Table 3. Thermal Resistance
Package Type θJA θ
16-lead, 3 mm × 3 mm LFCSP 44 31.5 °C/W
Unit
JC
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
Rev. 0 | Page 4 of 20
SSM2302
www.BDTIC.com/ADI
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
VDD
GND
VDD
GND
14
13
15
16
PIN 1
INDICATOR
1OUTL+
2OUTL–
SSM2302
3SD
TOP VIEW
(Not to Scale)
4INL+
5
6
NC
INL–
NC = NO CO NNECT
Figure 2. SSM2302 LFCSP Pin Configuration
Table 4. Pin Function Descriptions
Pin No. Mnemonic Description
1 OUTL+ Inverting Output for Left Channel.
2 OUTL− Noninverting Output for Left Channel.
3
SD
Shutdown Input. Active low digital input.
4 INL+ Noninverting Input for Left Channel.
5 INL− Inverting Input for Left Channel.
6 NC No Connect.
7 NC No Connect.
8 INR− Inverting Input for Right Channel.
9 INR+ Noninverting Input for Right Channel.
10 GAIN Gain Selection. Digital input.
11 OUTR− Noninverting Output for Right Channel.
12 OUTR+
Inverting Output for Right Channel.
13 GND Ground for Output Amplifiers.
14 VDD Power Supply for Output Amplifiers.
15 VDD Power Supply for Output Amplifiers.
16 GND Ground for Output Amplifiers.
12 OUTR+
11 OUT R–
10 GAIN
9 INR+
8
7
C
N
INR–
06051-002
Rev. 0 | Page 5 of 20
SSM2302
www.BDTIC.com/ADI
TYPICAL PERFORMANCE CHARACTERISTICS
100
RL = 8Ω, 33µH
GAIN = 12dB
10
VDD = 2.5V
100
10
VDD = 3.6V
R
L
1
= 8Ω, 33µH
1
THD + N (%)
0.1
0.01
0.0000010.00010.0000110
OUTPUT PO WER (W)
Figure 3. THD + N vs. Output Power into 8 Ω, A
100
RL = 8Ω, 33µH
GAIN = 6dB
10
1
THD + N (%)
0.1
0.01
0.0000010.0001
0.0000001
0.0000110
OUTPUT PO WER (W)
Figure 4. THD + N vs. Output Power into 8 Ω, A
VDD = 3.6V
0.0010.010.11
= 12 dB
V
VDD = 2.5V
VDD = 3.6V
0.01
0.001
0.1
= 6 dB
V
VDD = 5V
VDD = 5V
1
0.1
THD + N (%)
0.01
250mW
0.001
0.0001
10100k
06051-003
Figure 6. THD + N vs. Frequency, V
100
VDD = 2.5V
= 8Ω, 33µH
R
L
10
1
0.1
THD + N (%)
125mW
0.01
0.001
0.0001
10100k
06051-004
Figure 7. THD + N vs. Frequency, V
500mW
125mW
1001k10k
FREQUENCY (Hz)
= 3.6 V
DD
250mW
75mW
1001k10k
FREQUENCY (Hz)
= 2.5 V
DD
06051-006
06051-007
100
VDD = 5V
R
= 8Ω, 33µH
L
10
1
0.1
THD + N (%)
0.01
0.5W
0.001
0.0001
10100k
Figure 5. THD + N vs. Frequency, V
1W
0.25W
1001k10k
FREQUENCY (Hz)
= 5.0 V
DD
06051-005
Rev. 0 | Page 6 of 20
9
8
7
6
5
4
3
SUPPLY CURRENT (mA)
2
1
0
3.03.54.04.55.0
2.55.5
SUPPLY VOLTAGE (V)
Figure 8. Supply Current vs. Supply Voltage, No Load
06051-008
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