Analog Devices SSM2211S, SSM2211P, SSM2211CP Datasheet

V

OUT

B

IN –

IN +

SHUTDOWN

BYPASS

V

OUT

A

V– (GND)

BIAS

Low Distortion 1.5 Watt

a

FEATURES

1.5 W Output
Differential (BTL2) Output
Single-Supply Operation: 2.7 V to 5.5 V
Functions Down to 1.75 V
Wide Bandwidth: 4 MHz
Highly Stable, Phase Margin: >80 Degrees
Low Distortion: 0.2% THD @ 1 W Output
Excellent Power Supply Rejection

APPLICATIONS
Portable Computers
Personal Wireless Communicators
Hands-Free Telephones
Speakerphones
Intercoms
Musical Toys and Speaking Games

GENERAL DESCRIPTION

The SSM2211 is a high-performance audio amplifier that delivers
1 W RMS of low distortion audio power into a bridge-connected
8 Ω speaker load, (or 1.5 W RMS into 4 Ω load). It operates
over a wide temperature range and is specified for single-supply
voltages between 2.7 V and 5.5 V. When operating from batteries,
it will continue to operate down to 1.75 V. This makes the
SSM2211 the best choice for unregulated applications such as toys
and games. Featuring a 4 MHz bandwidth and distortion below

0.2 % THD @ 1 W, superior performance is delivered at higher
power or lower speaker load impedance than competitive units.

The low differential dc output voltage results in negligible losses
in the speaker winding, and makes high value dc blocking ca­pacitors unnecessary. Battery life is extended by using the
Shutdown mode, which reduces quiescent current drain to
typically 100 nA.

1

Audio Power Amplifier

SSM2211

FUNCTIONAL BLOCK DIAGRAM

The SSM2211 is designed to operate over the –20°C to +85°C
temperature range. The SSM2211 is available in SO-8 and
LFCSP (Lead Frame Chip Scale Package) surface mount pack­ages. The SO-8 features the patented Thermal Coastline lead
frame (see Figure 12). The advanced mechanical packaging of the
SSM2211 ensures lower chip temperature and enhanced per­formance relative to standard packaging options. DIP samples
are available; you should request a special quotation on produc­tion quantities. An evaluation board is available upon request of
your local Analog Device sales office.

Applications include personal portable computers, hands-free
telephones and transceivers, talking toys, intercom systems and
other low voltage audio systems requiring 1 W output power.

*

*Protected by U.S. Patent No. 5,519,576

NOTES

1

1.5 W @ 4 Ω, 25°C ambient, <1% THD, 5 V supply, 4 layer PCB.

2

Bridge Tied Load

REV. A

Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices.

One Technology Way, P.O. Box 9106, Norwood. MA 02062-9106, U.S.A.
Tel: [phone] www.analog.com
Fax: [phone] © Analog Devices, Inc., 2002

SSM2211–SPECIFICATIONS

ELECTRICAL CHARACTERISTICS

(V

= 5.0 V, TA = 25C, RL = 8 , CB = 0.1 F, VCM = VD/2, unless otherwise noted.)

S

Parameter Symbol Conditions Min Typ Max Unit

GENERAL CHARACTERISTICS

Differential Output Offset Voltage V
Output Impedance Z

OOS

OUT

AVD = 2 4 50 mV

0.1 Ω

SHUTDOWN CONTROL

Input Voltage High V
Input Voltage Low V

IH

IL

ISY = < 100 µA 3.0 V
ISY = Normal 1.3 V

POWER SUPPLY

Power Supply Rejection Ratio PSRR V
Supply Current I
Supply Current, Shutdown Mode I

SY

SD

= 4.75 V to 5.25 V 66 dB

S

VO1 = VO2 = 2.5 V 9.5 mA
Pin 1 = VDD, See TPC 29 100 nA

DYNAMIC PERFORMANCE

Gain Bandwidth GBP 4 MHz
Phase Margin Ø

0

86 Degrees

AUDIO PERFORMANCE

Total Harmonic Distortion THD + N P = 0.5 W into 8 Ω, f = 1 kHz 0.15 %
Total Harmonic Distortion THD + N P = 1.0 W into 8 Ω, f = 1 kHz 0.2 %
Voltage Noise Density e

n

ELECTRICAL CHARACTERISTICS

(V

= 3.3 V, TA = 25C, RL = 8 , CB = 0.1F, VCM = VD/2, unless otherwise noted.)

S

f = 1 kHz 85 nV√Hz

Parameter Symbol Conditions Min Typ Max Unit

GENERAL CHARACTERISTICS

Differential Output Offset Voltage V
Output Impedance Z

OOS

OUT

AVD = 2 5 50 mV

0.1 Ω

SHUTDOWN INPUT

Input Voltage High V
Input Voltage Low V

IH

IL

ISY = < 100 µA 1.7 V

1V

POWER SUPPLY

Supply Current I
Supply Current, Shutdown Mode I

SY

SD

VO1 = VO2 = 1.65 V 5.2 mA
Pin 1 = VDD, See TPC 29 100 nA

AUDIO PERFORMANCE

Total Harmonic Distortion THD + N P = 0.35 W into 8 Ω, f = 1 kHz 0.1 %

(V

ELECTRICAL CHARACTERISTICS

= 2.7 V, TA = 25C, RL = 8 , CB = 0.1 F, VCM = VS/2, unless otherwise noted.)

S

Parameter Symbol Conditions Min Typ Max Unit

GENERAL CHARACTERISTICS

Differential Output Offset Voltage V
Output Impedance Z

OOS

OUT

AVD = 2 5 50 mV

0.1 Ω

SHUTDOWN CONTROL

Input Voltage High V
Input Voltage Low V

IH

IL

ISY = < 100 µA 1.5 V
ISY = Normal 0.8 V

POWER SUPPLY

Supply Current I
Supply Current, Shutdown Mode I

SY

SD

VO1 = VO2 = 1.35 V 4.2 mA
Pin 1 = VDD, See TPC 29 100 nA

AUDIO PERFORMANCE

Total Harmonic Distortion THD + N P = 0.25 W into 8 Ω, f = 1 kHz 0.1 %

Specifications subject to change without notice

–2–

REV. A

SSM2211

WARNING!

ESD SENSITIVE DEVICE

ABSOLUTE MAXIMUM RATINGS

1, 2

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 V

Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Common Mode Input Voltage . . . . . . . . . . . . . . . . . . . . . . V

DD

DD

ESD Susceptibility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2000 V

Storage Temperature Range . . . . . . . . . . . . 65°C to +150°C

Operating Temperature Range . . . . . . . . . . . 20°C to +85°C

Junction Temperature Range . . . . . . . . . . . . 65°C to +165°C

Lead Temperature Range (Soldering, 60 sec) . . . . . . . . 300°C

NOTES

1

Absolute maximum ratings apply at 25°C, unless otherwise noted.

2

Stresses above those listed under Absolute Maximum Ratings may cause perma­nent damage to the device. This is a stress rating only; the functional operation of
the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.

Package Type 

8-Lead LFCSP (CP)
8-Lead SOIC (S) 98 43 °C/W
8-Lead PDIP (P)

NOTES

1

For the SOIC package, θJA is measured with the device soldered to a 4-layer
printed circuit board.

2

For the LFCSP package, θJA is measured with exposed lead frame soldered to
the printed circuit board.

3

Special order only.

2

3

1

JA



JC

Units

50 °C/W

103 43 °C/W

PIN CONFIGURATIONS

8-Lead SOIC

(SO-8)

+IN

–IN

1

2

TOP VIEW

(Not to Scale)

3

4

SHUTDOWN

BYPASS

8-Lead LFCSP

(CP-8)

+IN

–IN

1

2

TOP VIEW

(Not to Scale)

3

4

SHUTDOWN

BYPASS

8-Lead Plastic DIP

(N-8)

+IN

–IN

1

2

TOP VIEW

(Not to Scale)

3

4

SHUTDOWN

BYPASS

8

B

V

OUT

7

–V

6

+V

5

V

A

OUT

8

B

V

OUT

7

–V

6

+V

5

V

A

OUT

8

V

B

OUT

7

–V

6

+V

5

V

A

OUT

ORDERING GUIDE

Temperature Package Package

Model Range Description Options Brand

SSM2211CP-Reel –20°C to +85°C 8-Lead LFCSP CP-8 B5A
SSM2211S –20°C to +85°C 8-Lead SOIC SO-8
SSM2211S-Reel –20°C to +85°C 8-Lead SOIC SO-8
SSM2211S-Reel7 –20°C to +85°C 8-Lead SOIC SO-8
SSM2211P –20°C to +85°C 8-Lead PDIP N-8

*Special order only.

*

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the SSM2211 features proprietary ESD protection circuitry, permanent damage may occur on
devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are
recommended to avoid performance degradation or loss of functionality.

REV. A

–3–

SSM2211–Typical Performance Characteristics

10

TA = 25C

= 5V

V

DD

= 2 (BTL)

A

VD

= 8

R

L

= 500mW

P

L

1

CB = 0.1F

CB = 1F

THD + N – %

0.1



0.01
20 100 20k

C

= 0

B

FREQUENCY – Hz

1k 10k

TPC 1. THD+N vs. Frequency

10

TA = 25C

= 5V

V

DD

= 2 (BTL)

A

VD

= 8

R

L

= 1W

P

L

1

CB = 0.1F

THD + N – %

0.1

CB = 1F



0.01
20 100 20k

CB = 0

1k 10k

FREQUENCY – Hz

TPC 4. THD+N vs. Frequency

10

CB = 0

= 5V

DD

= 10 (BTL)

VD

= 8

L

= 500mW

L

CB = 0.1F

1k 10k

FREQUENCY – Hz

1

CB = 1F

THD + N – %

0.1



TA = 25C
V
A
R
P

0.01
20 100 20k

TPC 2. THD+N vs. Frequency

10

1

CB = 1F

THD + N – %

0.1
TA = 25C

V

DD

A

VD

= 8

R

L

= 1W

P

L

0.01
20 100 20k

CB = 0.1F

= 5V
= 10 (BTL)

FREQUENCY – Hz

CB = 0

1k 10k

TPC 5.THD+N vs. Frequency

10

CB = 0.1F

1

CB = 1F

THD + N – %

0.1
TA = 25C

= 5V

V

DD

= 20 (BTL)

A

VD

= 8

R

L

= 500mW

P

L

0.01
20 100 20k

FREQUENCY – Hz

1k 10k

TPC 3. THD+N vs. Frequency

10

CB = 0.1F

1

CB = 1F

THD + N – %

0.1
TA = 25C

= 5V

V

DD

= 20 (BTL)

A

VD

= 8

R

L

= 1W

P

L

0.01
20 100 20k

FREQUENCY – Hz

1k 10k

TPC 6. THD+N vs. Frequency

10

TA = 25C

= 5V

V

DD

= 2 (BTL)

A

VD

= 8

R

L

FREQUENCY = 20Hz

1

= 0.1F

C

B

THD + N – %

0.1

0.01
20n 0.1 2

TPC 7. THD+N vs. P

P

OUTPUT

– W

OUTPUT

10

TA = 25C

= 5V

V

DD

= 2 (BTL)

A

VD

= 8

R

L

FREQUENCY = 1kHz

= 0.1F

C

1

B

THD + N – %

0.1

1

0.01
20n 0.1 2

TPC 8. THD+N vs. P

P

OUTPUT

– W

OUTPUT

1

10

TA = 25C

= 5V

V

DD

= 2 (BTL)

A

VD

= 8

R

L

FREQUENCY = 20kHz

1

= 0.1F

C

B

THD + N –%

0.1

0.01
20n 0.1 2

TPC 9. THD+N vs. P

P

OUTPUT

– W

OUTPUT

1

–4–

REV. A

SSM2211

10

TA = 25C

= 3.3V

V

DD

= 2 (BTL)

A

VD

= 8

R

L

= 350mW

P

L

1

C

= 0.1F

THD + N – %

0.1



CB = 1F

0.01
20 100 20k

B

FREQUENCY – Hz

CB = 0

1k 10k

TPC 10. THD+N vs. Frequency

10

TA = 25C

= 3.3V

V

DD

= 2 (BTL)

A

VD

= 8

R

L

FREQUENCY = 20Hz

1

= 0.1F

C

B

THD + N – %

0.1

10

1

THD + N – %

0.1



0.01
20 100 20k

CB = 0.1F

CB = 1F

FREQUENCY – Hz

CB = 0

TA = 25C

= 3.3V

V

DD

= 10 (BTL)

A

VD

= 8

R

L

= 350mW

P

L

1k 10k

TPC 11. THD+N vs. Frequency

10

TA = 25C

= 3.3V

V

DD

= 2 (BTL)

A

VD

= 8

R

L

FREQUENCY = 1kHz

= 0.1F

C

1

B

THD + N – %

0.1

10

CB = 1F

= 3.3V

= 20 (BTL)
= 8
= 350mW

CB = 0.1F

1k 10k

FREQUENCY – Hz

1

THD + N – %

0.1
TA = 25C



V

DD

A

VD

R

L

P

L

0.01
20 100 20k

TPC 12. THD+N vs. Frequency

10

TA = 25C

= 3.3V

V

DD

= 2 (BTL)

A

VD

= 8

R

L

FREQUENCY = 20kHz

1

= 0.1F

C

B

THD + N – %

0.1

0.01
20n 0.1 2

TPC 13. THD+N vs. P

10

TA = 25C

= 2.7V

V

DD

= 2 (BTL)

A

VD

= 8

R

L

= 250mW

P

L

1

THD + N – %

0.1



CB = 1F

0.01

20 100 20k

P

OUTPUT

CB = 0.1F

FREQUENCY – Hz

– W

OUTPUT

CB = 0

1k 10k

TPC 16. THD+N vs. Frequency

0.01

1

20n 0.1 2

P

OUTPUT

– W

TPC 14. THD+N vs. P

10

CB = 0

1

THD + N – %

0.1



0.01
20 100 20k

CB = 0.1F

CB = 1F

1k 10k

FREQUENCY – Hz

OUTPUT

TA = 25C

= 2.7V

V

DD

= 10 (BTL)

A

VD

= 8

R

L

= 250mW

P

L

1

TPC 17. THD+N vs. Frequency

0.01
20n 0.1 2

P

OUTPUT

– W

TPC 15. THD+N vs. Frequency

10

CB = 0.1F

1

CB = 1F

THD + N – %

0.1



TA = 25C

= 2.7V

V

DD

= 20 (BTL)

A

VD

= 8

R

L

= 250mW

P

L

0.01
20 100 20k

FREQUENCY – Hz

1k 10k

TPC 18. THD+N vs. Frequency

1

REV. A

–5–