Analog Devices SSM2211 c Datasheet

Low Distortion 1.5 Watt

FEATURES

1.5 W output
Differential (BTL2) output
Single-supply operation: 2.7 V to 5.5 V
Functions down to 1.75 V
Wide bandwidth: 4 MHz
Highly stable, phase margin: >80 degrees
Low distortion: 0.2% THD @ 1 W output
Excellent power-supply rejection

APPLICATIONS

Portable computers
Personal wireless communicators
Hands-free telephones
Speaker phones
Intercoms
Musical toys and talking games

GENERAL DESCRIPTION

The SSM22113 is a high performance audio amplifier that
delivers 1 W rms of low distortion audio power into a bridge­connected 8 Ω speaker load (or 1.5 W rms into 4 Ω load). It
operates over a wide temperature range and is specified for
single-supply voltages between 2.7 V and 5.5 V. When oper­ating from batteries, it continues to operate down to 1.75 V.
This makes the SSM2211 the best choice for unregulated
applications, such as toys and games. Featuring a 4 MHz
bandwidth and distortion below 0.2% THD @ 1 W, superior
performance is delivered at higher power or lower speaker
load impedance than competitive units.

The low differential dc output voltage results in negligible
losses in the speaker winding, and makes high value dc
blocking capacitors unnecessary. Battery life is extended by
using shutdown mode, which typically reduces quiescent
current drain to 100 nA.

1

Audio Power Amplifier

SSM2211

FUNCTIONAL BLOCK DIAGRAM

IN–

IN+

BYPASS

SHUTDOWN

BIAS

SSM2211

V– (GND)

Figure 1.

The SSM2211 is designed to operate over the −20°C to +85°C
temperature range. The SSM2211 is available in SOIC-8 and
LFCSP (lead frame chip scale) surface mount packages. The
advanced mechanical packaging of the SSM2211CP ensures
lower chip temperature and enhanced performance relative to
standard packaging options.

Applications include personal portable computers, hands-free
telephones and transceivers, talking toys, intercom systems, and
other low voltage audio systems requiring 1 W output power.

1

1.5 W @ 4 Ω 25°C ambient, < 1% THD, 5 V supply, 4-layer PCB.

2

Bridge-tied load.

3

Protected by U.S. Patent No. 5,519,576.

V

A

OUT

V

B

OUT

00358-001

Rev. C

Information furnished by Analog Devices is believed to be accurate and reliable.
However, no responsibility is assumed by Analog Devices for its use, nor for any
infringements of patents or other rights of third parties that may result from its use.
Specifications subject to change without notice. No license is granted by implication
or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone]
Fax: [phone] © 2004 Analog Devices, Inc. All rights reserved.

www.analog.com

SSM2211

TABLE OF CONTENTS

Electrical Characteristics................................................................. 3

Absolute Maximum Ratings............................................................ 4

Pin Configurations ...........................................................................5

Typical Performance Characteristics............................................. 6

Product Overview........................................................................... 13

Thermal Performance—LFCSP................................................ 13

Typical Application......................................................................... 14

Bridged Output vs. Single-Ended Output Configurations ... 14

Speaker Efficiency and Loudness .............................................14

Power Dissipation....................................................................... 15

Output Voltage Headroom........................................................ 16

REVISION HISTORY

10/04—Data Sheet Changed from Rev. B to Rev. C

Updated Format..................................................................Universal

Changes to General Description .................................................... 1

Changes to Table 5............................................................................ 4

Deleted Thermal Performance—SOIC Section ........................... 8

Changes to Figure 31...................................................................... 10

Changes to Figure 40...................................................................... 12

Changes to Thermal Performance—LFCSP Section .................13

Deleted Figure 52, Renumbered Successive Figures.................. 14

Deleted Printed Circuit Board Layout —SOIC Section............ 14

Changes to Output Voltage Headroom Section .........................16

Changes to Start-Up Popping Noise Section .............................. 17

Changes to Ordering Guide.......................................................... 20

Automatic Shutdown-Sensing Circuit..................................... 16

Shutdown-Circuit Design Example......................................... 17

Start-Up Popping Noise............................................................. 17

SSM2211 Amplifier Design Example.................................. 17

Single-Ended Applications........................................................ 18

Driving Two Speakers Single Endedly..................................... 18

Evaluation Board ........................................................................ 19

LFCSP Printed Circuit Board Layout Considerations .......... 19

Outline Dimensions .......................................................................20

Ordering Guide .......................................................................... 20

10/02–Data Sheet Changed from Rev. A to Rev. B

Deleted 8-Lead PDIP .........................................................Universal

Updated OUTLINE DIMENSIONS ............................................ 15

5/02–Data Sheet Changed from Rev. 0 to Rev. A

Edits to GENERAL DESCRIPTION...............................................1

Edits to PACKAGE TYPE ................................................................3

Edits to ORDERING GUIDE ..........................................................3

Edits to PRODUCT OVERVIEW ...................................................8

Edits to PRINTED CIRCUIT BOARD LAYOUT

CONSIDERATION........................................................................ 13

Added section PRINTED CIRCUIT BOARD LAYOUT

CONSIDERATION—LFCSP........................................................ 14

Rev. C | Page 2 of 20

SSM2211

ELECTRICAL CHARACTERISTICS

Table 1. V

Parameter Symbol Conditions Min Typ Max Unit

GENERAL CHARACTERISTICS

Differential Output Offset Voltage V
Output Impedance Z

SHUTDOWN CONTROL

Input Voltage High VIH ISY = < 100 mA 3.0 V
Input Voltage Low VIL ISY = normal 1.3 V

POWER SUPPLY

Power-Supply Rejection Ratio PSRR VS = 4.75 V to 5.25 V 66 dB
Supply Current ISY VO1 = VO2 = 2.5 V 9.5 mA
Supply Current, Shutdown Mode ISD Pin 1 = VDD; see Figure 32 100 nA

DYNAMIC PERFORMANCE

Gain Bandwidth GBP 4 MHz
Phase Margin Ø0 86 Degrees

AUDIO PERFORMANCE

Total Harmonic Distortion THD + N
Total Harmonic Distortion THD + N

Voltage Noise Density en f = 1 kHz 85

= 5.0 V, TA = 25°C, RL = 8 Ω, CB = 0.1 µF, VCM = VD/2, unless otherwise noted.

S

AVD = 2 4 50 mV

OOS

0.1

OUT

P = 0.5 W into 8 Ω, f = 1 kHz
P = 1.0 W into 8 Ω, f = 1 kHz

Ω

0.15 %

0.2 %

nV√Hz

Table 2. V

= 3.3 V, TA = 25°C, RL = 8 Ω, CB = 0.1 µF, VCM = VD/2, unless otherwise noted.

S

Parameter Symbol Conditions Min Typ Max Unit

GENERAL CHARACTERISTICS
Differential Output Offset Voltage V
Output Impedance Z

AVD = 2 5 50 mV

OOS

0.1

OUT

Ω

SHUTDOWN INPUT
Input Voltage High VIH ISY = < 100 µA 1.7 V
Input Voltage Low VIL 1 V
POWER SUPPLY
Supply Current ISY VO1 = VO2 = 1.65 V 5.2 mA
Supply Current, Shutdown Mode ISD Pin 1 = VDD; see Figure 32 100 nA
AUDIO PERFORMANCE
Total Harmonic Distortion THD + N

P = 0.35 W into 8 Ω, f = 1 kHz

0.1 %

Table 3. V

= 2.7 V, TA = 25°C, RL = 8 Ω, CB = 0.1 µF, VCM = VS/2, unless otherwise noted.

S

Parameter Symbol Conditions Min Typ Max Unit

GENERAL CHARACTERISTICS

Differential Output Offset Voltage V
Output Impedance Z

AVD = 2 5 50 mV

OOS

0.1

OUT

Ω

SHUTDOWN CONTROL

Input Voltage High VIH ISY = < 100 mA 1.5 V
Input Voltage Low VIL ISY = normal 0.8 V

POWER SUPPLY

Supply Current ISY VO1 = VO2 = 1.35 V 4.2 mA
Supply Current, Shutdown Mode ISD Pin 1 = VDD; see Figure 32 100 nA

AUDIO PERFORMANCE

Total Harmonic Distortion THD + N

P = 0.25 W into 8 Ω, f = 1 kHz

0.1 %

Rev. C | Page 3 of 20

SSM2211

ABSOLUTE MAXIMUM RATINGS

Absolute maximum ratings apply at 25°C, unless otherwise
noted.

Table 4.

Parameter Value

Supply Voltage 6 V
Input Voltage V
Common-Mode Input Voltage V

DD

DD

ESD Susceptibility 2000 V
Storage Temperature Range −65°C to +150°C
Operating Temperature Range −20°C to +85°C
Junction Temperature Range −65°C to +165°C
Lead Temperature Range (Soldering, 60 sec) 300°C

Table 5.

Package Type

8-Lead LFCSP (CP)
8-Lead SOIC (S)

2

θ

JA

1

50 °C/W
121 °C/W

Units

1

For the LFCSP, θJA is measured with exposed lead frame soldered to the

printed circuit board.

2

For the SOIC, θJA is measured with the device soldered to a 4-layer printed

circuit board.

Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; the functional operation of the device at these or
any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods may
affect device reliability.

ESD CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.

Rev. C | Page 4 of 20

SSM2211

PIN CONFIGURATIONS

SHUTDOWN

BYPASS

IN+
IN–

1
2

TOP VIEW

(Not to Scale)

3
4

Figure 2. 8-Lead SOIC (SO-8)

IN+
IN–

1
2

TOP VIEW

(Not to Scale)

3
4

B

A

00358-002

SHUTDOWN

BYPASS

8

V

OUT

7

V–
V+

6

V

5

OUT

Figure 3. 8-Lead LFCSP (CP-8)

8

V

B

OUT

7

V–

6

V+

5

V

A

OUT

00358-003

Rev. C | Page 5 of 20

SSM2211

TYPICAL PERFORMANCE CHARACTERISTICS

10

TA = 25°C

= 5V

V

DD

A

= 2 (BTL)

VD

= 8Ω

R

L

P

= 500mW

L

1

CB = 0

10

1

TA = 25°C

= 5V

V

DD

A

= 2 (BTL)

VD

R

= 8Ω

L

= 1W

P

L

CB = 0

CB = 0.1µF

THD + N (%)

CB = 1µF

0.1

0.01
20 100 20k

FREQUENCY (Hz)

1k 10k

Figure 4. THD + N vs. Fre quency

10

CB = 0

1

CB = 1µF

THD + N (%)

0.1
TA = 25°C

V

= 5V

DD

= 10 (BTL)

A

VD

R

= 8Ω

L

P

= 500mW

L

0.01
20 100 20k

CB = 0.1µF

1k 10k

FREQUENCY (Hz)

Figure 5. THD + N vs. Fre quency

10

00358-004

00358-005

CB = 0.1µF

THD + N (%)

0.1

CB = 1µF

0.01
20 100 20k

FREQUENCY (Hz)

1k 10k

Figure 7. THD + N vs. Fre quency

10

CB = 0

1

THD + N (%)

CB = 1µF

0.1
TA = 25°C

= 5V

V

DD

AVD = 10 (BTL)
R

= 8Ω

L

= 1W

P

L

0.01
20 100 20k

CB = 0.1µF

1k 10k

FREQUENCY (Hz)

Figure 8. THD + N vs. Fre quency

10

00358-007

00358-008

CB = 0.1µF

1

CB = 1µF

THD + N (%)

0.1
TA = 25°C

V

= 5V

DD

= 20 (BTL)

A

VD

= 8Ω

R

L

P

= 500mW

L

0.01
20 100 20k

FREQUENCY (Hz)

1k 10k

Figure 6. THD + N vs. Fre quency

00358-006

Rev. C | Page 6 of 20

CB = 0.1µF

1

CB = 1µF

THD + N (%)

0.1
TA = 25°C

= 5V

V

DD

= 20 (BTL)

A

VD

R

= 8Ω

L

= 1W

P

L

0.01
20 100 20k

FREQUENCY (Hz)

1k 10k

Figure 9. THD + N vs. Fre quency

00358-009