ANALOG DEVICES OP295 Service Manual

Dual/Quad Rail-to-Rail

FEATURES

Rail-to-rail output swing
Single-supply operation: 3 V to 36 V
Low offset voltage: 300 μV
Gain bandwidth product: 75 kHz
High open-loop gain: 1000 V/mV
Unity-gain stable
Low supply current/per amplifier: 150 μA maximum

APPLICATIONS

Battery-operated instrumentation
Servo amplifiers
Actuator drives
Sensor conditioners
Power supply control

GENERAL DESCRIPTION

Rail-to-rail output swing combined with dc accuracy are the
key features of the OP495 quad and OP295 dual CBCMOS
operational amplifiers. By using a bipolar front end, lower noise
and higher accuracy than those of CMOS designs have been
achieved. Both input and output ranges include the negative
supply, providing the user with zero-in/zero-out capability. For
users of 3.3 V systems such as lithium batteries, the OP295/OP495
are specified for 3 V operation.

Maximum offset voltage is specified at 300 µV for 5 V operation,
and the open-loop gain is a minimum of 1000 V/mV. This yields
performance that can be used to implement high accuracy systems,
even in single-supply designs.

The ability to swing rail-to-rail and supply 15 mA to the load
makes the OP295/OP495 ideal drivers for power transistors and
H bridges. This allows designs to achieve higher efficiencies and
to transfer more power to the load than previously possible
without the use of discrete components.

For applications such as transformers that require driving
inductive loads, increases in efficiency are also possible.
Stability while driving capacitive loads is another benefit of this
design over CMOS rail-to-rail amplifiers. This is useful for
driving coax cable or large FET transistors. The OP295/OP495
are stable with loads in excess of 300 pF.

Operational Amplifiers

OP295/OP495

PIN CONFIGURATIONS

OUT A 1

–IN A 2

+IN A

V–

OP295

TOP VIEW

3

(Not to Scale)

4

Figure 1. 8-Lead Narrow-Body SOIC_N

S Suffix (R-8)

1

OUT A

–IN A

+IN A

V–

OP295

2

3

4

Figure 2. 8-Lead PDIP

P Suffix (N-8)

1

OUT A

2

–IN A

+IN A

3

V+

4

OP495

+IN B

5

6

–IN B

7

OUT B

Figure 3. 14-Lead PDIP

P Suffix (N-14)

1

OUT A

–IN A

2

+IN A

3

OP495

4

V+

TOP VIEW

+IN B

–IN B

OUT B

(Not to Scale)

5

6

7

NC

8

NC = NO CONNECT

Figure 4. 16-Lead SOIC_W

S Suffix (RW-16)

The OP295 and OP495 are specified over the extended indus­trial (−40°C to +125°C) temperature range. The OP295 is
available in 8-lead PDIP and 8-lead SOIC_N surface-mount
packages. The OP495 is available in 14-lead PDIP and 16-lead
SOIC_W surface-mount packages.

16

15

14

13

12

11

10

6

5

14

13

12

11

10

9

8

7

6

5

9

8

V+8

OUT B7

–IN B

+IN B

V+

OUT B

–IN B

+IN B

OUT D

–IN D

+IN D

V–

+IN C

–IN C

OUT C

OUT D

–IN D

+IN D

V–

+IN C

–IN C

OUT C

NC

00331-001

0331-002

00331-003

00331-004

Rev. G

Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone] www.analog.com
Fax: [phone] ©2009 Analog Devices, Inc. All rights reserved.

OP295/OP495

TABLE OF CONTENTS

Features .............................................................................................. 1

Applications ....................................................................................... 1

General Description ......................................................................... 1

Pin Configurations ........................................................................... 1

Revision History ............................................................................... 2

Specifications ..................................................................................... 3

Electrical Characteristics ............................................................. 3

Absolute Maximum Ratings ............................................................ 5

Thermal Resistance ...................................................................... 5

ESD Caution .................................................................................. 5

Typical Performance Characteristics ............................................. 6

Applications ....................................................................................... 9

Rail-to-Rail Application Information ........................................ 9

Low Drop-Out Reference ............................................................ 9

Low Noise, Single-Supply Preamplifier ..................................... 9

Driving Heavy Loads ................................................................. 10

Direct Access Arrangement ...................................................... 10

Single-Supply Instrumentation Amplifier .............................. 10

Single-Supply RTD Thermometer Amplifier ......................... 11

Cold Junction Compensated, Battery-Powered

Thermocouple Amplifier .......................................................... 11

5 V Only, 12-Bit DAC That Swings 0 V to 4.095 V .................... 11

4 mA to 20 mA Current-Loop Transmitter ............................ 12

3 V Low Dropout Linear Voltage Regulator ............................. 12

Low Dropout, 500 mA Voltage Regulator with Foldback

Current Limiting ........................................................................ 12

Square Wave Oscillator .............................................................. 13

Single-Supply Differential Speaker Driver .............................. 13

High Accuracy, Single-Supply, Low Power Comparator ...... 13

Outline Dimensions ....................................................................... 14

Ordering Guide .......................................................................... 16

REVISION HISTORY

8/09—Rev. F to Rev. G

Added Figure 18 ................................................................................ 8

Updated Outline Dimensions ....................................................... 17

3/08—Rev. E to Rev. F

Changes to Offset Voltage Unit in Table 1 .................................... 3

Updated Outline Dimensions ....................................................... 14

Changes to Ordering Guide .......................................................... 16

5/06—Rev. D to Rev. E

Updated Format .................................................................. Universal

Changes to Features .......................................................................... 1

Changes to Pin Connections ........................................................... 1

Updated Outline Dimensions ....................................................... 14

Changes to Ordering Guide .......................................................... 15

2/04—Rev. C to Rev. D

Changes to General Description .................................................... 1

Changes to Specifications ................................................................ 2

Changes to Absolute Maximum Ratings ....................................... 4

Changes to Ordering Guide ............................................................ 4

Updated Outline Dimensions ....................................................... 12

3/02—Rev. B to Rev. C

Figure changes to Pin Connections ................................................ 1

Deleted OP295GBC and OP495GBC from Ordering Guide ...... 3

Deleted Wafer Test Limits Table ...................................................... 3

Changes to Absolute Maximum Ratings ........................................ 4

Deleted Dice Characteristics ............................................................ 4

Rev. G | Page 2 of 16

OP295/OP495

SPECIFICATIONS

ELECTRICAL CHARACTERISTICS

VS = 5.0 V, VCM = 2.5 V, TA = 25°C, unless otherwise noted.

Table 1.

Parameter Symbol Conditions Min Typ Max Unit

INPUT CHARACTERISTICS

Offset Voltage VOS 30 300 µV

−40°C ≤ TA ≤ +125°C 800 µV
Input Bias Current IB 8 20 nA

−40°C ≤ TA ≤ +125°C 30 nA
Input Offset Current IOS ±1 ±3 nA

−40°C ≤ TA ≤ +125°C ±5 nA
Input Voltage Range VCM 0 4.0 V
Common-Mode Rejection Ratio CMRR 0 V ≤ VCM ≤ 4.0 V, −40°C ≤ TA ≤ +125°C 90 110 dB
Large Signal Voltage Gain AVO R
R
Offset Voltage Drift ∆VOS/∆T 1 5 µV/°C

OUTPUT CHARACTERISTICS

Output Voltage Swing High VOH R
R
I
Output Voltage Swing Low VOL R
R
I
Output Current I

±11 ±18 mA

OUT

POWER SUPPLY

Power Supply Rejection Ratio PSRR ±1.5 V ≤ VS ≤ ±15 V 90 110 dB
±1.5 V ≤ VS ≤ ±15 V, –40°C ≤ TA ≤ +125°C 85 dB
Supply Current per Amplifier ISY V

DYNAMIC PERFORMANCE

Slew Rate SR RL = 10 kΩ 0.03 V/µs
Gain Bandwidth Product GBP 75 kHz
Phase Margin θO 86 Degrees

NOISE PERFORMANCE

Voltage Noise en p-p 0.1 Hz to 10 Hz 1.5 µV p-p
Voltage Noise Density en f = 1 kHz 51 nV/√Hz
Current Noise Density in f = 1 kHz <0.1 pA/√Hz

V

= 3.0 V, VCM = 1.5 V, TA = 25°C, unless otherwise noted.

S

= 10 kΩ, 0.005 ≤ V

L

= 10 kΩ, −40°C ≤ TA ≤ +125°C 500 V/mV

L

= 100 kΩ to GND 4.98 5.0 V

L

= 10 kΩ to GND 4.90 4.94 V

L

= 1 mA, −40°C ≤ TA ≤ +125°C 4.7 V

OUT

= 100 kΩ to GND 0.7 2 mV

L

= 10 kΩ to GND 0.7 2 mV

L

= 1 mA, −40°C ≤ TA ≤ +125°C 90 mV

OUT

= 2.5 V, RL = ∞, −40°C ≤ TA ≤ +125°C 150 µA

OUT

≤ 4.0 V 1000 10,000 V/mV

OUT

Table 2.

Parameter Symbol Conditions Min Typ Max Unit

INPUT CHARACTERISTICS

Offset Voltage VOS 100 500 µV
Input Bias Current IB 8 20 nA
Input Offset Current IOS ±1 ±3 nA
Input Voltage Range VCM 0 2.0 V
Common-Mode Rejection Ration CMRR 0 V ≤ VCM ≤ 2.0 V, −40°C ≤ TA ≤ +125°C 90 110 dB
Large Signal Voltage Gain AVO R

= 10 kΩ 750 V/mV

L

Offset Voltage Drift VOS/T 1 µV/°C

Rev. G | Page 3 of 16

OP295/OP495

Parameter Symbol Conditions Min Typ Max Unit

OUTPUT CHARACTERISTICS

Output Voltage Swing High VOH R
Output Voltage Swing Low VOL R

POWER SUPPLY

Power Supply Rejection Ratio PSRR ±1.5 V ≤ VS ≤ ±15 V 90 110 dB
±1.5 V ≤ VS ≤ ±15 V, −40°C ≤ TA ≤ +125°C 85 dB
Supply Current per Amplifier ISY V

DYNAMIC PERFORMANCE

Slew Rate SR RL = 10 kΩ 0.03 V/µs
Gain Bandwidth Product GBP 75 kHz
Phase Margin θO 85 Degrees

NOISE PERFORMANCE

Voltage Noise en p-p 0.1 Hz to 10 Hz 1.6 µV p-p
Voltage Noise Density en f = 1 kHz 53 nV/√Hz
Current Noise Density in f = 1 kHz <0.1 pA/√Hz

V

= ±15.0 V, TA = 25°C, unless otherwise noted.

S

Table 3.

Parameter Symbol Conditions Min Typ Max Unit

INPUT CHARACTERISTICS

Offset Voltage VOS 300 500 µV

−40°C ≤ TA ≤ +125°C 800 µV
Input Bias Current IB V
V
Input Offset Current IOS V
V
Input Voltage Range VCM −15 +13.5 V
Common-Mode Rejection Ratio CMRR −15.0 V ≤ VCM ≤ +13.5 V, −40°C ≤ TA ≤ +125°C 90 110 dB
Large Signal Voltage Gain AVO R
Offset Voltage Drift ∆VOS/∆T 1 µV/°C

OUTPUT CHARACTERISTICS

Output Voltage Swing High VOH R
R
Output Voltage Swing Low VOL R
R
Output Current I

±15 ±25 mA

OUT

POWER SUPPLY

Power Supply Rejection Ratio PSRR VS = ±1.5 V to ±15 V 90 110 dB
V
Supply Current per Amplifier ISY V
Supply Voltage Range VS 3 (± 1.5) 36 (± 18) V

DYNAMIC PERFORMANCE

Slew Rate SR RL = 10 kΩ 0.03 V/µs
Gain Bandwidth Product GBP 85 kHz
Phase Margin θO 83 Degrees

NOISE PERFORMANCE

Voltage Noise en p-p 0.1 Hz to 10 Hz 1.25 µV p-p
Voltage Noise Density en f = 1 kHz 45 nV/√Hz
Current Noise Density in f = 1 kHz <0.1 pA/√Hz

= 10 kΩ to GND 2.9 V

L

= 10 kΩ to GND 0.7 2 mV

L

= 1.5 V, RL = ∞, −40°C ≤ TA ≤ +125°C 150 µA

OUT

= 0 V 7 20 nA

CM

= 0 V, −40°C ≤ TA ≤ +125°C 30 nA

CM

= 0 V ±1 ±3 nA

CM

= 0 V, −40°C ≤ TA ≤ +125°C ±5 nA

CM

= 10 kΩ 1000 4000 V/mV

L

= 100 kΩ to GND 14.95 V

L

= 10 kΩ to GND 14.80 V

L

= 100 kΩ to GND −14.95 V

L

= 10 kΩ to GND −14.85 V

L

= ±1.5 V to ±15 V, −40°C ≤ TA ≤ +125°C 85 dB

S

= 0 V, RL = ∞, VS = ±18 V, −40°C ≤ TA ≤ +125°C 175 µA

O

Rev. G | Page 4 of 16

OP295/OP495

ABSOLUTE MAXIMUM RATINGS

Table 4.

Parameter1 Rating

Supply Voltage ±18 V
Input Voltage ±18 V
Differential Input Voltage2 36 V
Output Short-Circuit Duration Indefinite
Storage Temperature Range

P, S Packages −65°C to +150°C

Operating Temperature Range

OP295G, OP495G –40°C to +125°C

Junction Temperature Range

P, S Packages –65°C to +150°C

Lead Temperature (Soldering, 60 sec) 300°C

1

Absolute maximum ratings apply to packaged parts, unless otherwise noted.

2

For supply voltages less than ±18 V, the absolute maximum input voltage is

equal to the supply voltage.

Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.

THERMAL RESISTANCE

θJA is specified for worst case mounting conditions; that is, θJA
is specified for device in socket for PDIP; θ

is specified for

JA

device soldered to printed circuit board for SOIC package.

Table 5. Thermal Resistance

Package Type θJA θ

8-Lead PDIP (N-8) 103 43 °C/W
8-Lead SOIC_N (R-8) 158 43 °C/W
14-Lead PDIP (N-14) 83 39 °C/W
16-Lead SOIC_W (RW-16) 98 30 °C/W

Unit

JC

ESD CAUTION

Rev. G | Page 5 of 16