Analog Devices OP281 481 b Datasheet

Ultralow Power, Rail-to-Rail Output

Operational Amplifiers

OP281/OP481

FEATURES
Low Supply Current: 4 ␮A/Amplifier Max
Single-Supply Operation: 2.7 V to 12 V
Wide Input Voltage Range
Rail-to-Rail Output Swing
Low Offset Voltage: 1.5 mV
No Phase Reversal

APPLICATIONS
Comparator
Battery-Powered Instrumentation
Safety Monitoring
Remote Sensors
Low Voltage Strain Gage Amplifiers

GENERAL DESCRIPTION

The OP281 and OP481 are dual and quad ultralow power, single­supply amplifiers featuring rail-to-rail outputs. Each operates
from supplies as low as 2.0 V and are specified at +3 V and +5 V
single supply as well as ±5V dual supplies.

Fabricated on Analog Devices’ CBCMOS process, the
OP281/OP481 features a precision bipolar input and an output
that swings to within millivolts of the supplies and continues to
sink or source current all the way to the supplies.

Applications for these amplifiers include safety monitoring,
portable equipment, battery and power supply control, and
signal conditioning and interfacing for transducers in very low
power systems.

The output’s ability to swing rail-to-rail and not increase supply
current, when the output is driven to a supply voltage, enables
the OP281/OP481 to be used as comparators in very low power
systems. This is enhanced by their fast saturation recovery time.
Propagation delays are 250 ms.

The OP281/OP481 are specified over the extended industrial
temperature range (–40∞C to +85∞C). The OP281 dual amplifier
is available in 8-lead SOIC surface-mount and TSSOP packages.
The OP481 quad amplifier is available in narrow 14-lead SOIC
and TSSOP packages.

PIN CONFIGURATIONS

8-Lead SOIC

(R Suffix)

1

8

OUT A

–IN A
+IN A

OP281

4

V–

V+

OUT B
–IN B
+IN B

5

14-Lead

Narrow-Body SOIC

(R Suffix)

1

OP481

7

14

OUT D
–IN D
+IN D
V–
+IN C
–IN C

8

OUT C

OUT A

–IN A
+IN A

V+
+IN B
–IN B

OUT B

NOTE: PIN ORIENTATION IS EQUIVALENT FOR
EACH PACKAGE VARIATION

8-Lead TSSOP

(RU Suffix)

1

8

OP281

4

5

14-Lead TSSOP

(RU Suffix)

1

14

OP481

8

7

REV. B

Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective companies.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone] www.analog.com
Fax: [phone] © 2003 Analog Devices, Inc. All rights reserved.

OP281/OP481–SPECIFICATIONS

ELECTRICAL SPECIFICATIONS

(@ VS = 3.0 V, VCM = 1.5 V, TA = 25ⴗC, unless otherwise noted.*)

Parameter Symbol Condition Min Typ Max Unit

INPUT CHARACTERISTICS

Offset Voltage V

Input Bias Current I
Input Offset Current I

OS

B

OS

Note 1 1.5 mV
–40∞C £ T

£ +85∞C 2.5 mV

A

–40∞C £ TA £ +85∞C310nA
–40∞C £ TA £ +85∞C 0.1 7 nA

Input Voltage Range 0 2 V
Common-Mode Rejection Ratio CMRR V

Large Signal Voltage Gain A

Offset Voltage Drift ⌬V
Bias Current Drift ⌬I

VO

/DT 10 mV/∞C

OS

/DT 20 pA/∞C

B

= 0 V to 2.0 V,

CM

–40∞C £ T

£ +85∞C6595dB

A

RL = 1 MW, VO = 0.3 V to 2.7 V 5 13 V/mV
–40∞C £ T

£ +85∞C2 V/mV

A

Offset Current Drift ⌬IOS/DT 2 pA/∞C

OUTPUT CHARACTERISTICS

Output Voltage High V

Output Voltage Low V

Short Circuit Limit I

OH

OL

SC

RL = 100 kW to GND,
–40∞C £ T

£ +85∞C 2.925 2.96 V

A

RL = 100 kW to V+,
–40∞C £ T

£ +85∞C2575mV

A

±1.1 mA

POWER SUPPLY

Power Supply Rejection Ratio PSRR V

Supply Current/Amplifier I

SY

= 2.7 V to 12 V,

S

–40∞C £ T

£ +85∞C7695dB

A

VO = 0 V 3 4 mA
–40∞C £ TA £ +85∞C5mA

DYNAMIC PERFORMANCE

Slew Rate SR RL = 100 kW, CL = 50 pF 25 V/ms
Turn On Time A
Turn On Time A

= 1, VO = 1 40 ms

V

= 20, VO = 1 50 ms

V

Saturation Recovery Time 65 ms
Gain Bandwidth Product GBP 95 kHz
Phase Margin ␾o70Degrees

NOISE PERFORMANCE

Voltage Noise en p-p 0.1 Hz to 10 Hz 10 mV p-p
Voltage Noise Density e
Current Noise Density i

*VOS is tested under a no load condition.
Specifications subject to change without notice.

n

n

f = 1 kHz 75 nV/÷Hz

<1 pA/÷Hz

–2–

REV. B

OP281/OP481

ELECTRICAL SPECIFICATIONS

(@ VS = 5.0 V, VCM = 2.5 V, TA = 25ⴗC, unless otherwise noted.*)

Parameter Symbol Condition Min Typ Max Unit

INPUT CHARACTERISTICS

Offset Voltage V

Input Bias Current I
Input Offset Current I

OS

B

OS

Note 1 0.1 1.5 mV
–40°C ≤ T

≤ +85°C 2.5 mV

A

–40°C ≤ TA ≤ +85°C310nA
–40°C ≤ TA ≤ +85°C 0.1 7 nA

Input Voltage Range 0 4 V
Common-Mode Rejection Ratio CMRR V

Large Signal Voltage Gain A

Offset Voltage Drift ⌬V
Bias Current Drift ⌬I

VO

/DT –40°C to +85°C10µV/°C

OS

/DT 20 pA/°C

B

= 0 V to 4.0 V,

CM

–40°C ≤ T

≤ +85°C6590dB

A

RL = 1 MΩ, VO = 0.5 V to 4.5 V 5 15 V/mV
–40°C ≤ T

≤ +85°C2 V/mV

A

Offset Current Drift ⌬IOS/DT 2 pA/°C

OUTPUT CHARACTERISTICS

Output Voltage High V

Output Voltage Low V

Short Circuit Limit I

OH

OL

SC

RL = 100 kΩ to GND,
–40°C ≤ T

≤ +85°C 4.925 4.96 V

A

RL = 100 kΩ to V+,
–40°C ≤ T

≤ +85°C2575mV

A

±3.5 mA

POWER SUPPLY

Power Supply Rejection Ratio PSRR VS = 2.7 V to 12 V,

≤ +85°C7695dB

A

Supply Current/Amplifier I

SY

–40°C ≤ T
VO = 0 V 3.2 4 µA
–40°C ≤ TA ≤ +85°C5µA

DYNAMIC PERFORMANCE

Slew Rate SR RL = 100 kΩ, CL = 50 pF 27 V/ms
Saturation Recovery Time 120 µs
Gain Bandwidth Product GBP 100 kHz
Phase Margin ␾o74Degrees

NOISE PERFORMANCE

Voltage Noise e
Voltage Noise Density e
Current Noise Density i

*VOS is tested under a no load condition.
Specifications subject to change without notice.

p-p 0.1 Hz to 10 Hz 10 µV p-p

n

n

n

f = 1 kHz 75 nV/√Hz

<1 pA/√Hz

REV. B

–3–

OP281/OP481

ELECTRICAL SPECIFICATIONS

(@ VS = ⴞ5.0 V, TA = +25ⴗC, unless otherwise noted.*)

Parameter Symbol Condition Min Typ Max Unit

INPUT CHARACTERISTICS

Offset Voltage V

Input Bias Current I
Input Offset Current I

OS

B

OS

Note 1 0.1 1.5 mV
–40∞C £ T

£ +85∞C 2.5 mV

A

–40∞C £ TA £ +85∞C310nA
–40∞C £ TA £ +85∞C 0.1 7 nA

Input Voltage Range –5+4V
Common-Mode Rejection CMRR V

Large Signal Voltage Gain A

Offset Voltage Drift ⌬V
Bias Current Drift ⌬I

VO

/DT –40∞C to +85∞C10mV/∞C

OS

/DT 20 pA/∞C

B

= –5.0 V to +4.0 V,

CM

–40∞C £ T

£ +85∞C6595dB

A

RL = 1 MW, VO = ±4.0 V, 5 13 V/mV
–40∞C £ T

£ +85∞C2 V/mV

A

Offset Current Drift ⌬IOS/DT 2 pA/∞C

OUTPUT CHARACTERISTICS

Output Voltage Swing V

Short Circuit Limit I

O

SC

RL = 100 kW to GND,
–40∞C £ T

£ +85∞C ±4.925 ±4.98 V

A

12 mA

POWER SUPPLY

Power Supply Rejection Ratio PSRR VS = ±1.35 V to ±6V,

Supply Current/Amplifier I

SY

–40∞C £ T
VO = 0 V 3.3 5 mA

£ +85∞C7695dB

A

–40∞C £ TA £ +85∞C6mA

DYNAMIC PERFORMANCE

Slew Rate ±SR RL = 100 kW, CL = 50 pF 28 V/ms
Gain Bandwidth Product GBP 105 kHz
Phase Margin ␾o75Degrees

NOISE PERFORMANCE

Voltage Noise en p-p 0.1 Hz to 10 Hz 10 mV p-p
Voltage Noise Density e
Voltage Noise Density e
Current Noise Density i

*VOS is tested under a no load condition.
Specifications subject to change without notice.

n

n

n

f = 1 kHz 85 nV/÷Hz
f = 10 kHz 75 nV/÷Hz

<1 pA/÷Hz

REV. B–4–

OP281/OP481

ABSOLUTE MAXIMUM RATINGS*

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 V

Input Voltage . . . . . . . . . . . . . . . . . . . . . . . GND to V

+ 10 V

S

Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . ± 3.5 V

Output Short-Circuit Duration to GND . . . . . . . . . Indefinite

Storage Temperature Range . . . . . . . . . . . . –65∞C to +150∞C

Operating Temperature Range . . . . . . . . . . . –40∞C to +85∞C

Junction Temperature Range . . . . . . . . . . . . –65∞C to +150∞C

Model Range Description Option

OP281GS –40∞C to +85∞C 8-Lead SOIC R-8
OP281GRU –40∞C to +85∞C 8-Lead TSSOP RU-8
OP481GS –40∞C to +85∞C 14-Lead SOIC R-14
OP481GRU –40∞C to +85∞C 14-Lead TSSOP RU-14

ORDERING GUIDE

Temperature Package Package

Lead Temperature Range (Soldering, 60 sec) . . . . . . . . 300∞C

*Stresses above those listed under Absolute Maximum Ratings may cause perma-

nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposures to absolute maximum rating
conditions for extended periods may affect device reliability.

Package Type ␪JA* ␪

JC

Unit

8-Lead SOIC (R)(S) 158 43 ∞C/W
8-Lead TSSOP (RU) 240 43 ∞C/W
14-Lead SOIC (R)(S) 12 0 36 ∞C/W
14-Lead TSSOP (RU) 240 43 ∞C/W

*qJA is specified for the worst-case conditions, i.e., qJA is specified for device

soldered in circuit board for TSSOP and SOIC packages.

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although the
OP281/OP481 features proprietary ESD protection circuitry, permanent damage may occur on
devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are
recommended to avoid performance degradation or loss of functionality.

REV. B

–5–