Analog Devices OP27AZ, OP27FP, OP27GP, OP27EJ, OP27EP Datasheet
...
Low-Noise, Precision
a
FEATURES
√
Low Noise: 80 nV p-p (0.1 Hz to 10 Hz), 3 nV/
Low Drift: 0.2 V/C
High Speed: 2.8 V/s Slew Rate, 8 MHz Gain
Bandwidth
Low V
Excellent CMRR: 126 dB at V
: 10 V
OS
of ±11 V
CM
High Open-Loop Gain: 1.8 Million
Fits 725, OP07, 5534A Sockets
Available in Die Form
GENERAL DESCRIPTION
The OP27 precision operational amplifier combines the low
offset and drift of the OP07 with both high speed and low noise.
Offsets down to 25 µV and drift of 0.6 µV/°C maximum make
the OP27 ideal for precision instrumentation applications.
Exceptionally low noise, e
= 3.5 nV/√Hz, at 10 Hz, a low 1/f
n
noise corner frequency of 2.7 Hz, and high gain (1.8 million),
allow accurate high-gain amplification of low-level signals. A
gain-bandwidth product of 8 MHz and a 2.8 V/µsec slew rate
provides excellent dynamic accuracy in high-speed, dataacquisition systems.
A low input bias current of ±10 nA is achieved by use of a
bias-current-cancellation circuit. Over the military temperature
range, this circuit typically holds I
and IOS to ±20 nA and 15 nA,
B
respectively.
The output stage has good load driving capability. A guaranteed
swing of ±10 V into 600 Ω and low output distortion make the
OP27 an excellent choice for professional audio applications.
Hz
(Continued on page 7)
Operational Amplifier
OP27
PIN CONNECTIONS
TO-99
(J-Suffix)
BAL
BAL 1
–IN 2
+IN 3
OP27
4V– (CASE)
NC = NO CONNECT
8-Pin Hermetic DIP
(Z-Suffix)
Epoxy Mini-DIP
(P-Suffix)
8-Pin SO
(S-Suffix)
TRIM
OS
–IN
+IN
1
OP27
2
3
4
NC = NO CONNECT
V
V+
OUT
NC
8
V
TRIM
OS
7
V+
6
OUT
5
NCV–
NONINVERTING
INPUT (+)
INVERTING
INPUT (–)
R1 AND R2 ARE PERMANENTLY
*
ADJUSTED AT WAFER TEST FOR
MINIMUM OFFSET VOLTAGE.
Q6
Q3
R1*
R3
18
V
ADJ.
OS
Q2B
R4
R2*
Q2AQ1A Q1B
Q11 Q12
Figure 1. Simplified Schematic
REV. A
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices.
V+
C2
Q22
Q21
R23 R24
Q23
Q27 Q28
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700 www.analog.com
Fax: 781/326-8703 © Analog Devices, Inc., 2002
Q24
R5
C1
R9
R12
C3 C4
Q20 Q19
Q26
Q46
OUTPUT
Q45
V–
OP27
–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
(@ VS = ±15 V, TA = 25C, unless otherwise noted.)
OP27A/E OP27F OP27C/G
Parameter Symbol Conditions Min Typ Max Min Typ Max Min Typ Max Unit
INPUT OFFSET
VOLTAGE
LONG-TERM V
STABILITY
1
OS
2, 3
V
OS
10 25 20 60 30 100 µV
VOS/Time 0.2 1.0 0.3 1.5 0.4 2.0 µV/M
INPUT OFFSET
CURRENT I
OS
7 35 9 50 12 75 nA
INPUT BIAS
CURRENT I
INPUT NOISE
VOLTAGE
INPUT NOISE e
Voltage Density
3, 4
3
e
B
n p-p
n
0.1 Hz to 10 Hz 0.08 0.18 0.08 0.18 0.09 0.25 µV p-p
fO = 10 Hz 3.5 5.5 3.5 5.5 3.8 8.0 nV/√Hz
fO = 30 Hz 3.1 4.5 3.1 4.5 3.3 5.6 nV/√Hz
±10 ±40 ±12 ±55 ±15 ±80 nA
fO = 1000 Hz 3.0 3.8 3.0 3.8 3.2 4.5 nV/√Hz
INPUT NOISE i
Current Density
3, 5
n
fO = 10 Hz 1.7 4.0 1.7 4.0 1.7 pA/√Hz
fO = 30 Hz 1.0 2.3 1.0 2.3 1.0 pA/√Hz
fO = 1000 Hz 0.4 0.6 0.4 0.6 0.4 0.6 pA/√Hz
INPUT
RESISTANCE
Differential-Mode
Common-Mode R
6
R
IN
INCM
1.3 6 0.94 5 0.7 4 MΩ
3 2.5 2 GΩ
INPUT VOLTAGE
RANGE IVR ±11.0 ±12.3 ±11.0 ±12.3 ±11.0 ±12.3 V
COMMON-MODE
REJECTION RATIO CMRR VCM = ±11 V 114 126 106 123 100 120 dB
POWER SUPPLY PSRR VS = ±4 V
REJECTION RATIO to ±18 V 1 10 1 10 2 20 µV/V
LARGE-SIGNAL A
VO
VOLTAGE GAIN V
RL ≥ 2 kΩ,
= ±10 V 1000 1800 1000 1800 700 1500 V/mV
O
≥ 600 Ω,
R
L
VO = ±10 V 800 1500 800 1500 600 1500 V/mV
OUTPUT
VOLTAGE SWING V
O
RL ≥ 2 kΩ±12.0 ± 13.8 ± 12.0 ± 13.8 ±11.5 ± 13.5 V
RL ≥ 600 Ω±10.0 ± 11.5 ± 10.0 ± 11.5 ±10.0 ± 11.5 V
SLEW RATE
7
SR RL ≥ 2 kΩ 1.7 2.8 1.7 2.8 1.7 2.8 V/µs
O
GAIN
BANDWIDTH
PRODUCT
7
GBW 5.0 8.0 5.0 8.0 5.0 8.0 MHz
OPEN-LOOP
OUTPUT
RESISTANCE R
O
VO = 0, IO = 07070 70Ω
POWER
CONSUMPTION P
d
V
O
90 140 90 140 100 170 mW
OFFSET
ADJUSTMENT
RANGE RP = 10 kΩ±4.0 ±4.0 ± 4.0 mV
NOTES
1
Input offset voltage measurements are performed ~ 0.5 seconds after application of power. A/E grades guaranteed fully warmed up.
2
Long-term input offset voltage stability refers to the average trend line of VOS versus. Time over extended periods after the first 30 days of operation. Excluding the
initial hour of operation, changes in VOS during the first 30 days are typically 2.5 µV. Refer to typical performance curve.
3
Sample tested.
4
See test circuit and frequency response curve for 0.1 Hz to 10 Hz tester.
5
See test circuit for current noise measurement.
6
Guaranteed by input bias current.
7
Guaranteed by design.
–2–
REV. A
OP27
ELECTRICAL CHARACTERISTICS
(@ VS = ±15 V, –55C ≤ TA ≤ 125C, unless otherwise noted.)
OP27A OP27C
Parameter Symbol Conditions Min Typ Max Min Typ Max Unit
INPUT OFFSET
VOLTAGE
AVERAGE INPUT
OFFSET DRIFT TCV
1
V
OS
TCV
OS
OSn
30 60 70 300 µV
2
3
0.2 0.6 4 1.8 µV/°C
INPUT OFFSET
CURRENT I
OS
15 50 30 135 nA
INPUT BIAS
CURRENT I
B
±20 ±60 ±35 ±150 nA
INPUT VOLTAGE
RANGE IVR ±10.3 ± 11.5 ±10.2 ± 11.5 V
COMMON-MODE
REJECTION RATIO CMRR VCM = ±10 V 108 122 94 118 dB
POWER SUPPLY
REJECTION RATIO PSRR VS = ±4.5 V to ±18 V 2 16 4 51 µV/V
LARGE-SIGNAL
VOLTAGE GAIN A
VO
RL ≥ 2 kΩ, VO = ±10 V 600 1200 300 800 V/mV
OUTPUT
VOLTAGE SWING V
NOTES
1
Input offset voltage measurements are performed by automated test equipment approximately 0.5 seconds after application of power. A/E grades guaranteed fully
warmed up.
2
The TCVOS performance is within the specifications unnulled or when nulled with RP = 8 kΩ to 20 kΩ. TCVOS is 100% tested for A/E grades, sample tested for
C/F/G grades.
3
Guaranteed by design.
O
RL ≥ 2 kΩ±11.5 ± 13.5 ±10.5 ±13.0 V
REV. A
–3–
OP27
(@ VS = ±15 V, –25C¯≤ TA ≤ 85C for OP27J, OP27Z, 0C ≤ TA ≤ 70C for OP27EP,
ELECTRICAL CHARACTERISTICS
Parameter Symbol Conditions Min Typ Max Min Typ Max Min Typ Max Unit
INPUT ONSET
VOLTAGE V
AVERAGE INPUT
OFFSET DRIFT TCV
INPUT OFFSET
CURRENT I
INPUT BIAS
CURRENT I
INPUT VOLTAGE
RANGE IVR ±10.5 ±11.8 ±10.5 ±11.8 ±10.5 ±11.8 V
COMMON-MODE
REJECTION RATIO CMRR VCM = ±10 V 110 124 102 121 96 118 dB
POWER SUPPLY
REJECTION RATIO PSRR VS = ±4.5 V 2 15 2 16 2 32 µV/V
LARGE-SIGNAL
VOLTAGE GAIN A
OUTPUT
VOLTAGE SWING V
NOTES
1
The TCVOS performance is within the specifications unnulled or when nulled with RP = 8 kΩ to 20 kΩ. TCVOS is 100% tested for A/E grades, sample tested for
C/F/G grades.
2
Guaranteed by design.
OS
TCV
OS
B
VO
O
1
OS
2
OSn
to ±18 V
R
≥ 2 kΩ,
L
VO = ±10 V 750 1500 700 1300 450 1000 V/mV
RL ≥ 2 kΩ±11.7 ±13.6 ±11.4 ±13.5 ± 11.0 ± 13.3 V
OP27FP, and –40C ≤ TA ≤ 85C for OP27GP, OP27GS, unless otherwise noted.)
OP27E OP27F OP27G
20 50 40 140 55 220 µV
0.2 0.6 0.3 1.3 0 4 1.8 µV/°C
0.2 0.6 0.3 1.3 0 4 1.8 µV/°C
10 50 14 85 20 135 nA
±14 ±60 ±18 ±95 ±25 ± 150 nA
–4–
REV. A
DICE CHARACTERISTICS
DIE SIZE 0.109 0.055 INCH, 5995 SQ. MILS
(2.77 1.40mm, 3.88 SQ. mm)
1. NULL
2. (–) INPUT
3. (+) INPUT
4. V–
6. OUTPUT
7. V+
8. NULL
OP27
WAFER TEST LIMITS
(@ VS = ±15 V, TA = 25C unless otherwise noted.)
OP27N OP27G OP27GR
Parameter Symbol Conditions Limit Limit Limit Unit
INPUT OFFSET VOLTAGE* V
INPUT OFFSET CURRENT I
OS
OS
35 60 100 µV Max
35 50 75 nA Max
INPUT BIAS CURRENT IB ±40 ±55 ± 80 nA Max
INPUT VOLTAGE RANGE IVR ±11 ±11 ± 11 V Min
COMMON-MODE REJECTION
RATIO CMRR V
= IVR 114 106 100 dB Min
CM
POWER SUPPLY PSRR VS = ±4 V to ±18 V 10 10 20 µV/V Max
LARGE-SIGNAL VOLTAGE
GAIN A
OUTPUT VOLTAGE SWING V
POWER CONSUMPTION P
NOTE
*Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed
for standard product dice. Consult factory to negotiate specifications based on dice lot qualification through sample lot assembly and testing.
VO
A
VO
O
V
O
d
RL ≥ 2 kΩ, VO = ±10 V 1000 1000 700 V/mV Min
RL ≥ 600 Ω, VO = ±10 V 800 800 600 V/mV Min
RL ≥ 2 kΩ±12.0 ± 12.0 +11.5 V Min
RL2600n ±10.0 ±10.0 ± 10.0 V Min
VO = 0 140 140 170 mW Max
REV. A
–5–
Loading...