ANALOG DEVICES OP27 Service Manual

Low Noise, Precision
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FEATURES

Low noise: 80 nV p-p (0.1 Hz to 10 Hz), 3 nV/√Hz Low drift: 0.2 μV/°C High speed: 2.8 V/μs slew rate, 8 MHz gain bandwidth Low V Excellent CMRR: 126 dB at VCM of ±11 V High open-loop gain: 1.8 million Fits OP07, 5534A sockets Available in die form

GENERAL DESCRIPTION

The OP27 precision operational amplifier combines the low offset and drift of the OP07 with both high speed and low noise. Of the OP27 ideal for precision instrumentation applications. Exceptionally low noise, e noise corner frequency of 2.7 Hz, and high gain (1.8 million), allow accurate high-gain amplification of low-level signals. A gain-bandwidth product of 8 MHz and a 2.8 V/μs slew rate provide excellent dynamic accuracy in high speed, data­acquisition systems.
A low input bias current of ±10 nA is achieved by use of a bias current cancellation circuit. Over the military temperature range, this circuit typically holds I and 15 nA, respectively.
The output stage has good load driving capability. A guaranteed swin OP27 an excellent choice for professional audio applications.
: 10 μV
OS
fsets down to 25 μV and maximum drift of 0.6 μV/°C make
= 3.5 nV/√Hz, at 10 Hz, a low 1/f
n
and IOS to ±20 nA
B
g of ±10 V into 600 Ω and low output distortion make the
(Continued on Page 3)
Operational Amplifier
OP27

PIN CONFIGURATIONS

BAL
BAL 1
IN 2
+IN 3
OP27
4V– (CASE)
NC = NO CONNECT
Figure 1. 8-Lead TO-99 (J-Suffix)
OS
TRIM
–IN
+IN
1
OP27
2
3
4
NC = NO CONNECT
V
Figure 2. 8-Lead CERDIP – Glass Hermetic Seal (Z-Suffix),
8-Lead
PDIP (P-Suffix),
8-Lead SO (S-Suffix)
V+
OUT
NC
00317-001
8
V
TRIM
OS
7
V+
6
OUT
5
NCV–
00317-002

FUNCTIONAL BLOCK DIAGRAM

.
Q2B
R4
1
R2
Q2AQ1A Q1B
Q11 Q12
R3
Q6
NONINVERTING
INPUT (+)
INVERTING
INPUT (–)
1
R1 AND R2 ARE PERMANENTLY ADJUSTED AT WAFER TEST FOR MINIMUM OFFSET VOLTAGE
Rev. F
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.
Q3
18
VOS ADJ.
1
R1
V+
C2
Q21
Q23
Q27 Q28
R23 R24
R5
Q24
Q22
C1
R9
R12
C3 C4
Q20 Q19
Q26
Q46
OUTPUT
Q45
V–
Figure 3.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 www.analog.com Fax: 781.461.3113 ©2006 Analog Devices, Inc. All rights reserved.
00317-003
OP27
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TABLE OF CONTENTS

Features.............................................................................................. 1
Typical Performance Characteristics..............................................8
General Description......................................................................... 1
Pin Configurations........................................................................... 1
Functional Block Diagram ..............................................................1
Revision History ...............................................................................2
Specifications..................................................................................... 4
Electrical Characteristics............................................................. 4
Typical Electrical Characteristics ...............................................6
Absolute Maximum Ratings............................................................ 7
Thermal Resistance...................................................................... 7
ESD Caution.................................................................................. 7

REVISION HISTORY

5/06—Rev. E to Rev. F
Removed References to 745 ..............................................Universal
Updated 741 to AD741......................................................Universal
Changes to Ordering Guide.......................................................... 20
12/05—Rev. D to Rev. E
E
dits to Figure 2................................................................................ 1
9/05—Rev. C to Rev. D
pdated Format..................................................................Universal
U
Changes to Table 1............................................................................ 4
Removed Die Characteristics Figure ............................................ 5
Removed Wafer Test Limits Table .................................................. 5
Changes to Table 5............................................................................ 7
Changes to Comments on Noise Section ....................................15
Changes to Ordering Guide.......................................................... 24
Application Information................................................................ 14
Offset Voltage Adjustment........................................................ 14
Noise Measurements.................................................................. 14
Unity-Gain Buffer Applications ............................................... 14
Comments On Noise................................................................. 15
Audio Applications .................................................................... 16
References.................................................................................... 18
Outline Dimensions....................................................................... 19
Ordering Guide............................................................................... 20
9/01—Rev. 0 to Rev. A
dits to Ordering Information ........................................................1
E
Edits to Pin Connections..................................................................1
Edits to Absolute Maximum Ratings ..............................................2
Edits to Package Type .......................................................................2
Edits to Electrical Characteristics .............................................. 2, 3
Edits to Wafer Test Limits ................................................................4
Deleted Typical Electrical Characteristics......................................4
Edits to Burn-In Circuit Figure.......................................................7
Edits to Application Information ....................................................8
1/03—Rev. B to Rev. C
E
dits to Pin Connections................................................................. 1
Edits to General Description........................................................... 1
Edits to Die Characteristics............................................................. 5
Edits to Absolute Maximum Ratings ............................................. 7
Updated Outline Dimensions....................................................... 16
Edits to Figure 8.............................................................................. 14
Edits to Outline Dimensions......................................................... 16
Rev. F | Page 2 of 20
OP27
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GENERAL DESCRIPTION
(Continued from Page 1)
PSRR and CMRR exceed 120 dB. These characteristics, coupled
th long-term drift of 0.2 μV/month, allow the circuit designer
wi to achieve performance levels previously attained only by discrete designs.
Low cost, high volume production of OP27 is achieved by usin
g an on-chip Zener zap-trimming network. This reliable and stable offset trimming scheme has proven its effectiveness over many years of production history.
The OP27 provides excellent performance in low noise,
h accuracy amplification of low level signals. Applications
hig include stable integrators, precision summing amplifiers, precision voltage threshold detectors, comparators, and professional audio circuits such as tape heads and micro­phone preamplifiers.
The OP27 is a direct replacement for OP06, OP07, and OP45 a
mplifiers; AD741 types can be directly replaced by removing
he nulling potentiometer of the AD741.
t
Rev. F | Page 3 of 20
OP27
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SPECIFICATIONS

ELECTRICAL CHARACTERISTICS

VS = ±15 V, TA = 25°C, unless otherwise noted.
Table 1.
OP27A/E OP27/G Parameter Symbol Conditions Min Typ Max Min Typ Max Unit
INPUT OFFSET VOLTAGE LONG-TE RM VOS STABILITY2, INPUT OFFSET CURRENT IOS 7 35 12 75 nA INPUT BIAS CURRENT IB ±10 ±40 ±15 ±80 nA INPUT NOISE VOLTAGE INPUT NOISE en fO = 10 Hz 3.5 5.5 3.8 8.0 nV/√Hz
Voltage Density f INPUT NOISE in fO = 10 Hz 1.7 4.0 1.7 pA/√Hz
Current Density
INPUT RESISTANCE
Differential Mode
Common Mode R INPUT VOLTAGE RANGE IVR ±11.0 ±12.3 COMMON-MODE REJECTION RATIO CMRR VCM = ±11 V 114 126 POWER SUPPLY REJECTION RATIO PSRR VS = ±4 V to ±18 V LARGE SIGNAL VOLTAGE GAIN AVO RL ≥ 2 k Ω, VO = ±10 V 1000 1800
OUTPUT VOLTAGE SWING VO RL ≥ 2 k Ω ±12.0 ±13.8
SLEW RATE
6
GAIN BANDWIDTH PRODUCT OPEN-LOOP OUTPUT RESISTANCE RO VO = 0, IO = 0 70 70 Ω POWER CONSUMPTION Pd VO 90 140 100 170 mW OFFSET ADJUSTMENT RANGE RP = 10 kΩ ±4.0
1
Input offset voltage measurements are performed approximately 0.5 seconds after application of power. A/E grades guaranteed fully warmed up.
2
Long-term input offset voltage stability refers to the average trend line of VOS vs. time over extended periods after the first 30 days of operation. Excluding the initial
hour of operation, changes in V
3
Sample tested.
4
See voltage noise test circuit (Figure 31).
5
Guaranteed by input bias current.
6
Guaranteed by design.
1
3
3, 4
3
3
5
6
during the first 30 days are typically 2.5 μV. Refer to the Typical Performance Characteristics section.
OS
VOS 10 25 30 100 μV VOS/Time 0.2 1.0 0.4 2.0 μV/MO
e
0.1 Hz to 10 Hz 0.08 0.18 0.09 0.25 μV p-p
n p-p
f
RIN 1.3 6
INCM
SR RL ≥ 2 kΩ 1.7 2.8 GBW 5.0 8.0
= 30 Hz 3.1 4.5 3.3 5.6 nV/√Hz
O
= 1000 Hz 3.0 3.8 3.2 4.5 nV/√Hz
O
= 30 Hz
f
O
fO = 1000 Hz
≥ 600 Ω, VO = ±10 V 800 1500
R
L
≥ 600 Ω ±10.0 ±11.5
R
L
1.0 2.3
0.4 0.6
3
0.7 4
±11.0 ±12.3 100 120
1.0
pA/√Hz
0.4 0.6 pA/√Hz
2
GΩ V dB
1 10 2 20 μV/V
700 1500 600 1500 ±11.5 ±13.5 ±10.0 ±11.5
1.7 2.8
5.0 8.0
±4.0
V/mV V/mV V V V/μs MHz
mV
Rev. F | Page 4 of 20
OP27
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VS = ±15 V, −55°C ≤ TA ≤ 125°C, unless otherwise noted.
Table 2.
OP27A Parameter Symbol Conditions Min Typ Max Unit
INPUT OFFSET VOLTAGE AVERAGE INPUT OFFSET DRIFT TCV
INPUT OFFSET CURRENT IOS 15 50 nA INPUT BIAS CURRENT IB ±20 ±60 nA INPUT VOLTAGE RANGE IVR ±10.3 ±11.5 V COMMON-MODE REJECTION RATIO CMRR VCM = ±10 V 108 122 POWER SUPPLY REJECTION RATIO PSRR VS = ±4.5 V to ±18 V 2 16 μV/V LARGE SIGNAL VOLTAGE GAIN AVO RL ≥ 2 kΩ, VO = ±10 V 600 1200 OUTPUT VOLTAGE SWING VO RL ≥ 2 kΩ ±11.5 ±13.5
1
Input offset voltage measurements are performed by automated test equipment approximately 0.5 seconds after application of power. A/E grades guaranteed fully
warmed up.
2
The TCVOS performance is within the specifications unnulled or when nulled with RP = 8 kΩ to 20 kΩ. TCVOS is 100% tested for A/E grades, sample tested for G grades.
3
Guaranteed by design.
VS = ±15 V, −25°C ≤ TA ≤ 85°C for OP27J, OP27Z, 0°C ≤ TA ≤ 70°C for OP27EP, and –40°C ≤ TA ≤ 85°C for OP27GP, OP27GS, unless otherwise noted.
Table 3.
OP27E OP27G Parameter Symbol Conditions Min Typ Max Min Typ Max Unit
INPUT ONSET VOLTAGE VOS AVERAGE INPUT OFFSET DRIFT TCV
INPUT OFFSET CURRENT IOS INPUT BIAS CURRENT IB INPUT VOLTAGE RANGE IVR ±10.5 ±11.8 COMMON-MODE REJECTION RATIO CMRR VCM = ±10 V 110 124 POWER SUPPLY REJECTION RATIO PSRR VS = ±4.5 V to ±18 V 2 15 2 32 μV/V LARGE SIGNAL VOLTAGE GAIN AVO RL ≥ 2 kΩ, VO = ±10 V 750 1500 OUTPUT VOLTAGE SWING VO RL ≥ 2 kΩ ±11.7 ±13.6
1
The TCVOS performance is within the specifications unnulled or when nulled with RP = 8 kΩ to 20 kΩ. TCVOS is 100% tested for A/E grades, sample tested for C/G grades.
2
Guaranteed by design.
1
TCV
VOS 30 60 μV
OS
OSn
1
2
TCV
2
OS
3
OSn
0.2 0.6 μV/°C
20 50
0.2 0.6
0.2 0.6 10 50 ±14 ±60
±10.5 ±11.8 96 118
450 1000 ±11.0 ±13.3
55 220 μV 0 4 1.8 μV/°C 0 4 1.8 μV/°C 20 135 nA ±25 ±150 nA
dB
V/mV V
V dB
V/mV V
Rev. F | Page 5 of 20
OP27
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TYPICAL ELECTRICAL CHARACTERISTICS

VS = ±15 V, TA = 25°C unless otherwise noted.
Table 4.
Parameter Symbol Conditions OP27N Typical Unit
AVERAGE INPUT OFFSET VOLTAGE DRIFT TCV AVERAGE INPUT OFFSET CURRENT DRIFT TCIOS 80 pA/°C AVERAGE INPUT BIAS CURRENT DRIFT TCIB 100 pA/°C INPUT NOISE VOLTAGE DENSITY en fO = 10 Hz 3.5 nV/√Hz e e
INPUT NOISE CURRENT DENSITY in fO = 10 Hz 1.7 pA/√Hz i i INPUT NOISE VOLTAGE SLEW RATE e
GAIN BANDWIDTH PRODUCT GBW 8 MHz
1
Input offset voltage measurements are performed by automated test equipment approximately 0.5 seconds after application of power.
1
TCVOS or Nulled or unnulled 0.2 μV/°C
RP = 8 kΩ to 20 kΩ
OSn
fO = 30 Hz 3.1 nV/√Hz
n
fO = 1000 Hz 3.0 nV/√Hz
n
fO = 30 Hz 1.0 pA/√Hz
n
fO = 1000 Hz 0.4 pA/√Hz
n
0.1 Hz to 10 Hz 0.08 μV p-p
np-p
SR R
≥ 2 kΩ 2.8 V/μs
L
Rev. F | Page 6 of 20
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