Pin-compatible 12-, 14-bit digital-to-analog converters
Serial input, voltage output
Maximum output voltage range of ±10 V
Data readback
3-wire serial interface
Clear function to a user-defined voltage
Power-down function
Serial data output for daisy-chaining
16-lead TSSOP
APPLICATIONS
Industrial automation
Automatic test equipment
Process control
General-purpose instrumentation
GENERAL DESCRIPTION
The AD5530/AD5531 are single 12- and 14-bit (respectively)
serial input, voltage output digital-to-analog converters (DAC).
They utilize a versatile 3-wire interface that is compatible with
SPI®, QSPI™, MICROWIRE™, and DSP interface standards. Data
is presented to the part in a 16-bit serial word format. Serial
data is available on the SDO pin for daisy-chaining purposes.
Data readback allows the user to read the contents of the DAC
register via the SDO pin.
AD5530/AD5531
FUNCTIONAL BLOCK DIAGRAM
SS
DAC
CONTROL LOGIC
AD5530/AD5531
POWER-DOWN
LDAC
can be used to
V
OUT
R
R
DUTGND
CLR
PD
REFIN
REFAGND
LDAC
RBEN
SDIN
R
DAC REGIS TER
SHIFT REGISTER
GND
SCLK SYNC SDO
R
12-/14-BIT
Figure 1.
The DAC output is buffered by a gain of two amplifier and
referenced to the potential at DUTGND.
update the output of the DAC asynchronously. A power-down
PD
pin (
a
) allows the DAC to be put into a low power state, and
CLR
pin allows the output to be cleared to a user-defined
voltage, the potential at DUTGND.
The AD5530/AD5531 are available in 16-lead TSSOP.
0938-001
Rev. B
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
Changes to Figure 28...................................................................... 17
3/06—Rev. 0 to Rev. A
Change to Table 3 ............................................................................. 5
Change to Figure 4 ........................................................................... 8
Change to Output Voltage Section ............................................... 14
Change to Ordering Guide............................................................ 18
5/02—Revision 0: Initial Version
Rev. B | Page 2 of 20
AD5530/AD5531
SPECIFICATIONS
VDD = 15 V ± 10%; VSS = −15 V ± 10%; GND = 0 V; RL = 5 kΩ and CL = 220 pF to GND. All specifications T
MIN
to T
, unless otherwise noted.
MAX
Table 1.
Parameter
1
AD5530 AD5531 Unit Test Conditions/Comments
ACCURACY
Resolution 12 14 Bits
Relative Accuracy ±1 ±2 LSB max
Differential Nonlinearity ±1 ±1 LSB max Guaranteed monotonic over temperature
Zero-Scale Error ±2 ±8 LSB max Typically within ±1 LSB
Full-Scale Error ±2 ±8 LSB max Typically within ±1 LSB
Gain Error ±1 ±4 LSB typ
Gain Temperature Coefficient2 0.5 0.5 ppm FSR/°C typ
10 10 ppm FSR/°C max
REFERENCE INPUTS2
Reference Input Range 0 to 5 0 to 5 V min to V max Max output range ±10 V
DC Input Resistance 100 100 MΩ typ
Input Current ±1 ±1 μA max Per input, typically ±20 nA
DUTGND INPUT2
DC Input Impedance 60 60 kΩ typ
Max Input Current ±0.3 ±0.3 mA typ
Input Range −4 to +4 −4 to +4 V min to V max Max output range ±10 V
O/P CHARACTERISTICS2
Output Voltage Swing ±10 ±10 V max
Short-Circuit Current 15 15 mA max
Resistive Load 5 5 kΩ min To 0 V
Capacitive Load 1200 1200 pF max To 0 V
DC Output Impedance 0.5 0.5 Ω max
DIGITAL I/O
V
, Input High Voltage 2.4 2.4 V min
INH
V
, Input Low Voltage 0.8 0.8 V max
INL
I
, Input Current ±10 ±10 μA max Total for all pins
INH
CIN, Input Capacitance
SDO VOL, Output Low Voltage 0.4 0.4 V max I
2
10 10 pF max 3 pF typical
= 1 mA
SINK
POWER REQUIREMENTS
VDD/VSS +15/−15 +15/−15 V nom ±10% for specified performance
Power Supply Sensitivity
ΔFull Scale/ΔVDD 110 110 dB typ
ΔFull Scale/ΔVSS 100 100 dB typ
IDD 2 2 mA max Outputs unloaded
ISS 2 2 mA max Outputs unloaded
IDD in Power-Down 150 150 μA max Typically 50 μA
1
Temperature range for B Version: −40°C to +85°C.
2
Guaranteed by design, not subject to production test.
Rev. B | Page 3 of 20
AD5530/AD5531
VDD = 12 V ± 10%; VSS = −12 V ± 10%; GND = 0 V; RL = 5 kΩ and CL = 220 pF to GND; TA = T
MIN
to T
, unless otherwise noted.
MAX
Table 2.
Parameter
1
AD5530 AD5531 Unit Test Conditions/Comments
ACCURACY
Resolution 12 14 Bits
Relative Accuracy ±1 ±2 LSB max
Differential Nonlinearity ±1 ±1 LSB max Guaranteed monotonic over temperature
Zero-Scale Error ±2 ±8 LSB max Typically within ±1 LSB
Full-Scale Error ±2 ±8 LSB max Typically within ±1 LSB
Gain Error ±1 ±4 LSB typ
Gain Temperature Coefficient2 0.5 0.5 ppm FSR/°C typ 10 10 ppm FSR/°C max
REFERENCE INPUTS2
Reference Input Range 0 to 4.096 0 to 4.096 V min to V max Max output range ±8.192 V
DC Input Resistance 100 100 MΩ typ
Input Current ±1 ±1 μA max Per input, typically ±20 nA
DUTGND INPUT2
DC Input Impedance 60 60 kΩ typ
Max Input Current ±0.3 ±0.3 mA typ
Input Range −3 to +3 −3 to +3 V min to V max Max output range ±8.192 V
O/P CHARACTERISTICS2
Output Voltage Swing ±8.192 ±8.192 V max
Short-Circuit Current 15 15 mA max
Resistive Load 5 5 kΩ min To 0 V
Capacitive Load 1200 1200 pF max To 0 V
DC Output Impedance 0.5 0.5 Ω max
DIGITAL I/O
V
, Input High Voltage 2.4 2.4 V min
INH
V
, Input Low Voltage 0.8 0.8 V max
INL
I
, Input Current ±10 ±10 μA max Total for all pins
INH
CIN, Input Capacitance2 10 10 pF max 3 pF typical
SDO VOL, Output Low Voltage 0.4 0.4 V max I
= 1 mA
SINK
POWER REQUIREMENTS
VDD/VSS +12/−12 +12/−12 V nom ±10% for specified performance
Power Supply Sensitivity
ΔFull Scale/ΔVDD 110 110 dB typ
ΔFull Scale/ΔVSS 100 100 dB typ
IDD 2 2 mA max Outputs unloaded
ISS 2 2 mA max Outputs unloaded
IDD in Power-Down 150 150 μA max Typically 50 μA
1
Temperature range for B Version: −40°C to +85°C.
2
Guaranteed by design, not subject to production test.
Rev. B | Page 4 of 20
AD5530/AD5531
AC PERFORMANCE CHARACTERISTICS
VDD = 10.8 V to 16.5 V, VSS = −10.8 V to −16.5 V; GND = 0 V; RL = 5 kΩ and CL = 220 pF to GND. All specifications T
otherwise noted.
Table 3.
Parameter B Version Unit Test Conditions/Comments
DYNAMIC PERFORMANCE
Output Voltage Settling Time 20 μs typ
Full-scale change to ±½ LSB. DAC latch contents alternately
loaded with all 0s and all 1s.
Slew Rate 1.3 V/μs typ
Digital-to-Analog Glitch Impulse 120 nV-s typ
DAC latch alternately loaded with 0x0FFF and 0x1000. Not
dependent on load conditions.
Digital Feedthrough 0.5 nV-s typ Effect of input bus activity on DAC output under test.
Output Noise Spectral Density @ 1 kHz 100 nV/√Hz typ All 1s loaded to DAC.
STANDALONE TIMING CHARACTERISTICS
VDD = 10.8 V to 16.5 V, VSS = −10.8 V to −16.5 V; GND = 0 V; RL = 5 kΩ and CL = 220 pF to GND. All specifications T
otherwise noted.
MIN
MIN
to T
to T
MAX
MAX
, unless
, unless
Table 4.
ParameterLimit at T
f
MAX
1, 2
MIN
, T
Unit Description
MAX
7 MHz max SCLK frequency
t1 140 ns min SCLK cycle time
t2 60 ns min SCLK low time
t3 60 ns min SCLK high time
t4 50 ns min
t5 40 ns min
t6 50 ns min
SYNC to SCLK falling edge setup time
SCLK falling edge to
SYNC high time
Min
SYNC rising edge
t7 40 ns min Data setup time
t8 15 ns min Data hold time
t9 5 ns min
t10 50 ns min
t11 5 ns min
t12 50 ns min
1
Guaranteed by design, not subject to production test.
2
Sample tested during initial release and after any redesign or process change that can affect this parameter. All input signals are measured with tR = tF = 5 ns (10% to
90% of VDD) and timed from a voltage level of (VIL + VIH)/2.
SYNC high to LDAC low
LDAC pulse width
LDAC high to SYNC low
CLR
pulse width
SCLK
t
4
SYNC
SDIN
1
LDAC
CLR
1
LDAC CAN BE TIED PERMANENTLY LO W, IF REQUIRED.
t
6
MSB
DB15DB14DB11DB0
t
1
t7t
8
Figure 2. Timing Diagram for Standalone Mode
LSB
t
3
t
t
5
2
t
9
t
11
t
10
t
12
0938-002
Rev. B | Page 5 of 20
AD5530/AD5531
DAISY-CHAINING AND READBACK TIMING CHARACTERISTICS
VDD = 10.8 V to 16.5 V, VSS = −10.8 V to −16.5 V; GND = 0 V; RL = 5 kΩ and CL = 220 pF to GND. All specifications T
otherwise noted.
MIN
to T
MAX
, unless
Table 5.
ParameterLimit at T
f
MAX
1, 2, 3
MIN
, T
Unit Description
MAX
2 MHz max SCLK frequency
t1 500 ns min SCLK cycle time
t2 200 ns min SCLK low time
t3 200 ns min SCLK high time
t4 50 ns min
t5 40 ns min
t6 50 ns min
SYNC to SCLK falling edge setup time
SCLK falling edge to
SYNC high time
Min
SYNC rising edge
t7 40 ns min Data setup time
t8 15 ns min Data hold time
t12 50 ns min
CLR pulse width
t13 130 ns min SCLK falling edge to SDO valid
t14 50 ns max SCLK falling edge to SDO invalid
t15 50 ns min
t16 50 ns min
t17 100 ns min
1
Guaranteed by design, not subject to production test.
2
Sample tested during initial release and after any redesign or process change that can affect this parameter. All input signals are measured with tR = tF = 5 ns (10% to
90% of VDD) and timed from a voltage level of (VIL + VIH)/2.
3
SDO; R
= 5 kΩ, CL = 15 pF
PULLUP
RBEN to SCLK falling edge setup time
RBEN hold time
RBEN falling edge to SDO valid
SCLK
SYNC
SDIN
SDO
(DAISY-
CHAINING)
RBEN
t
1
t
4
t
6
MSB
DB15DB14DB11DB0
t7t
8
t
3
t
2
t
MSBLSB
DB15DB11DB0
14
t
15
LSB
t
5
t
13
t
16
SDO
(READBACK)
t
17
Figure 3. Timing Diagram for Daisy-Chaining and Readback Mode
Rev. B | Page 6 of 20
t
13
MSBLSB
t
14
RB0RB1300
00938-003
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