Zetex (Now Diodes) BCW67A, BCW67AR, BCW67B, BCW67BR, BCW67C Schematic [ru]
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SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 4 - JUNE 1996
PARTMARKING DETAILS
BCW67A DA BCW67AR 4W
BCW67B DB BCW67BR 5W
BCW67C DC BCW67CR 6W
BCW68F DF BCW68FR 7T
BCW68G DG BCW68GR 5T
BCW68H DH BCW68HR 7N
BCW67
BCW68
C
E
B
COMPLEMENTARY TYPES
BCW67 BCW65
BCW68 BCW66
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL BCW67 BCW68 UNIT
Collector-Emitter Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current(10ms) I
Continuous Collector Current I
Base Current I
Power Dissipation at T
Operating and Storage Temperature Range T
=25°C P
amb
CES
CEO
EBO
CM
C
B
tot
j:Tstg
-45 -60 V
-32 -45 V
-5 V
-1000 mA
-800 mA
-100 mA
330 mW
-55 to +150 °C
3 - 293 - 30
BCW67
BCW68
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Emitter
Breakdown Voltage
BCW67
BCW68
BCW67
BCW68
Emitter-Base Breakdown Voltage V
Collector-Emitter
BCW67
Cut-off Current
BCW68
Emitter-Base Cut-Off Current I
Collector-Emitter Saturation Voltage V
Base-Emitter Saturation Voltage V
Static
Forward
BCW67A
BCW68F
Current
Transfer
BCW67B
BCW68G
BCW67C
BCW68H
Transition Frequency f
V
(BR)CEO
V
(BR)CES
(BR)EBO
I
CES
EBO
CE(sat)
BE(sat)
h
FE
h
FE
h
FE
T
-32
-45
-45
-60
-5 V
-0.7
75
10035170 250
120
16060250 400
180
250
350 630
100
100 MHz IC =-20mA, VCE =-10V
VI
nA
-20
-10
µA
-20
nA
-10
µA
-20 nA V
-0.3 VVI
=-10mA
CEO
=-10mA
I
CEO
=-10µA
I
C
I
=-10µA
C
=-10µA
I
EBO
V
=-32V
CES
=-32V ,T
V
CES
=-45V
V
CES
V
=-45V , T
CES
=-4V
EBO
=-100mA, IB = - 10mA
C
I
= -500mA, IB =-50mA*
C
-2 V IC=-500mA, IB=-50mA*
IC=-10mA, VCE =-1V
I
=-100mA, VCE =-1V*
C
=-500mA, VCE =-2V*
I
C
IC=-10mA, VCE =-1V
I
=-100mA, VCE =-1V*
C
I
=-500mA, VCE =-2V*
C
IC=-10mA, VCE =-1V
=-100mA, VCE =-1V*
I
C
I
=-500mA, VCE =-2V*
C
f = 100MHz
amb
amb
=150°C
=150°C
Collector-Base Capacitance C
Emitter-Base Capacitance C
cbo
ebo
12 18 pF V
80 pF V
Noise Figure N 2 10 dB I
Switching times:
Turn-On Time
Turn-Off Time
t
on
t
off
100
400nsns
Spice parameter data is available upon request for this device
*Measured under pulsed conditions. Pulse width=300
µs. Duty cycle ≤2%
=-10V, f =1MHz
CBO
=-0.5V, f =1MHz
EBO
= -0.2mA, VCE =- 5V
C
=1KΩ, f=1KH
R
G
∆f=200Hz
IC=-150mA
=- IB2 =-15mA
I
B1
=150Ω
R
L
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