White Electronic Designs EDI8F321024C20MZC, EDI8F321024C20MNC, EDI8F321024C20MMC, EDI8F321024C15MZC, EDI8F321024C15MNC Datasheet

EDI8F321024C

1024Kx32 Static RAM CMOS, High Speed Module

FEATURES

n 1024Kx32 bit CMOS Static RAM

 Access Times: 15, 20, and 25ns

 Individual Byte Selects

 Fully Static, No Clocks

 TTL Compatible I/O

n High Density Package

 72 Pin ZIP, No. 175

 72 lead SIMM, No. 176 (Angle)

 72 lead SIMM, No. 356 (Straight)

 Common Data Inputs and Outputs

n Single +5V (±10%) Supply Operation

FIG. 1

PIN CONFIGURATIONS AND BLOCK DIAGRAM

DESCRIPTION

The EDI8F321024C is a high speed 32 megabit Static RAM
module organized as 1024K words by 32 bits. This module is
constructed from eight 1024Kx4 Static RAMs in SOJ packages
on an epoxy laminate (FR4) board.

Four chip enables (EØ-E3) are used to independently enable
the four bytes. Reading or writing can be executed on individual
bytes or any combination of multiple bytes through proper use of
selects.

The EDI8F321024C is offered in 72 pin ZIP and 72 lead SIMM
packages, which enable 32 megabits of memory to be placed in
less than 1.3 square inches of board space.

All inputs and outputs are TTL compatible and operate from a
single 5V supply. Fully asynchronous circuitry requires no
clocks or refreshing for operation and provides equal access and
cycle times for ease of use.

Pins PD1- PD4, are used to identify module memory density in
applications where alternate modules can be interchanged.

PIN NAMES

AØ-A19 Address Inputs

EØ-E3 Chip Enables

W Write Enable

G Output Enable

DQØ-DQ31 Common Data

Input/Output

VCC Power (+5V±10%)

VSS Ground

NC No Connection

Aug. 2002 Rev. 8A
ECO #15521

8F321024C Pin Config.

0E

1E

2E

3E

8F321024C Blk Dia.

1

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EDI8F321024C

ABSOLUTE MAXIMUM RATINGS*

Voltage on any pin relative to VSS -0.5V to 7.0V
Operating Temperature TA (Ambient)

Commercial 0°C to +70°C

Industrial -40°C to +85°C
Storage Temperature, Plastic -55°C to +125°C
Power Dissipation 7.0 Watts
Output Current 20 mA

*Stress greater than those listed under "Absolute Maximum Ratings" may cause
permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions greater than those indicated
in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.

DC ELECTRICAL CHARACTERISTICS

Parameter Sym Conditions Min Typ Max Units

Operating Power Supply Current ICC1 W, E = VIL, II/O = 0mA, Min Cycle 1280 mA
Standby (TTL) Power Supply Current ICC2 E ³ VIH, VIN £ VIL or VIN ³ VIH 480 mA
Full Standby Power Supply Current ICC3 E ³ VCC-0.2V 80 mA
CMOS VIN ³ VCC-0.2V or VIN £ 0.2V
Input Leakage Current ILI VIN = 0V to VCC -- -- ±80 µA
Output Leakage Current ILO V I/O = 0V to VCC -- -- ±20 µA
Output High Voltage VOH IOH = -4.0mA 2.4 -- -- V
Output Low Voltage VOL IOL = 8.0mA -- -- 0.4 V

*Typical: TA = 25°C, VCC = 5.0V

RECOMMENDED DC OPERATING CONDITIONS

Parameter Sym Min Typ Max Units

Supply Voltage VCC 4.5 5.0 5.5 V
Supply Voltage VSS 0 0 0 V
Input High Voltage VIH 2.2 -- 6.0 V
Input Low Voltage VIL -0.3 -- 0.8 V

AC TEST CONDITIONS

Input Pulse Levels VSS to 3.0V
Input Rise and Fall Times 5ns
Input and Output Timing Levels 1.5V
Output Load 1TTL, CL = 30pF

(note: For TEHQZ,TGHQZ and TWLQZ, CL = 5pF)

TRUTH TABLE

E W G Mode Output Power

H X X Standby HIGH Z ICC2/ICC3
L H L Read DOUT ICC1
L L X Write DIN ICC1

Output

L H H Deselect HIGH Z ICC1

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CAPACITANCE

(f=1.0MHz, VIN=VCC or VSS)

Parameter Sym Max Unit

Address Lines CI 60 pF
Data Lines CD/Q 20 pF
Chip Enable Line CC 20 pF
Write Line CN 60 pF

These parameters are sampled, not 100% tested.

2

Aug. 2002 Rev. 8A

ECO #15521