Toshiba RN1421, RN1422, RN1423, RN1424, RN1425 Schematic [ru]

RN1421 RN1427

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)

RN1421,RN1422,RN1423,RN1424

RN1425,RN1426,RN1427

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

zHigh current type (IC (max) = 800mA)

zWith built-in bias resistors

zSimplify circuit design

zReduce a quantity of parts and manufacturing process

zLow VCE (sat)

zComplementary to RN2421 to RN2427

Equivalent Circuit and Bias Resister Values

Type No.	R1 (kΩ)	R2 (kΩ)
RN1421	1	1
RN1422	2.2	2.2
RN1423	4.7	4.7
RN1424	10	10
RN1425	0.47	10
RN1426	1	10
RN1427	2.2	10

Unit: mm

S-Mini

JEDEC TO-236MOD

JEITA SC-59

TOSHIBA 2-3F1A

Weight: 12 mg (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic			Symbol	Rating	Unit
Collector-base voltage		RN1421 to 1427	VCBO	50	V
Collector-emitter voltage			VCEO	50	V
		RN1421 to 1424		10
Emitter-base voltage			VEBO		V
		RN1425, 1426		5
		RN1427		6
Collector current			IC	800	mA
Collector power dissipation		RN1421 to 1427	PC	200	mW
Junction temperature			Tj	150	°C
Storage temperature range			Tstg	−55 to 150	°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

1	2010-08-20

RN1421 RN1427

Electrical Characteristics (Ta = 25°C)

	Characteristic		Symbol	Test	Test Condition	Min	Typ.	Max	Unit
				Circuit
	Collector cut-off	RN1421 to 1427	ICBO	―	VCB = 50V, IE = 0	―	―	100	nA
	current		ICEO		VCE = 50V, IB = 0	―	―	500
		RN1421				3.85	―	7.14
		RN1422			VEB = 10V, IC = 0	1.75	―	3.25
		RN1423				0.82	―	1.52
	Emitter cut-off current		IEBO	―					mA
		RN1424				0.38	―	0.71
		RN1425			VEB = 5V, IC = 0	0.365	―	0.682
		RN1426				0.35	―	0.65
		RN1427			VEB = 6V, IC = 0	0.378	―	0.703
		RN1421				60	―	―
		RN1422				65	―	―
		RN1423				70	―	―
	DC current gain			―	VCE = 1V, IC = 100mA				―
		RN1424	hFE			90	―	―
		RN1425				90	―	―
		RN1426				90	―	―
		RN1427				90	―	―
	Collector-emitter	RN1421	VCE (sat)	―	IC = 50mA, IB = 2mA	―	―	0.25	V
	saturation voltage	RN1422 to 1427			IC = 50mA, IB = 1mA
		RN1421				1.0	―	3.5
		RN1422				1.4	―	4.5
		RN1423				2.0	―	6.5
	Input voltage (ON)		VI (ON)	―	VCE = 0.2V, IC = 100mA				V
		RN1424				3.0	―	12.0
		RN1425				0.6	―	2.0
		RN1426				0.7	―	2.5
		RN1427				1.0	―	3.0
		RN1421 to 1424				0.8	―	1.3
	Input voltage (OFF)		VI (OFF)	―	VCE = 5V, IC = 0.1mA				V
		RN1425, 1426				0.4	―	0.8
		RN1427				0.5		1.0
	Transition frequency	RN1421 to 1427	fT	―	VCE = 5V, IC = 20mA	―	300	―	MHz
	Collector Output	RN1421 to 1427	Cob	―	VCB = 10V, IE = 0,	―	7	―	pF
	capacitance				f = 1MHz
		RN1421				0.7	1.0	1.3
		RN1422				1.54	2.2	2.86
		RN1423				3.29	4.7	6.11
	Input resistor		R1	―	―				kΩ
		RN1424				7	10	13
		RN1425				0.329	0.47	0.61
		RN1426				0.7	1.0	1.3
		RN1427				1.54	2.2	2.86
		RN1421 to 1424				0.9	1.0	1.1
	Resistor ratio	RN1425	R1/R2	―	―	0.0423	0.047	0.0517	―
		RN1426				0.09	0.1	0.11
		RN1427				0.2	0.22	0.24

2	2010-08-20

RN1421 RN1427

3	2010-08-20