3
UCC3957 -1/-2/-3/-4
PIN DESCRIPTIONS
AN1: Connects to the negative terminal of the top battery
cell and the positive terminal of the second battery cell.
AN2: Connects to the bottom terminal of the second
battery cell and the top terminal of the third battery cell.
AN3: Connects to the bottom terminal of the third battery
cell and the top terminal of the fourth battery cell in a four
cell stack. In a three cell pack it connects to the bottom
terminal of the third battery and to AN4.
AN4: Connects to the bottom terminal of the battery
stack and the top of the current sense resistor.
AVDD: Internal analog supply bypass cap pin. Connect a
0.1µF capacitor between this pin and AN4. This pin is
nominally 7.3V.
BATLO: Connects to the bottom of the current sense
resistor and the negative terminal of the battery pack.
CHGEN: The charge enable input for the protection IC.
This point must be driven high to allow charging of the
battery pack. This pin has a very weak pulldown.
CDLY1: Delay control pin for the short circuit protection
feature. A capacitor connected between this point and
AN4 will determine the time delay from when an
overcurrent situation is detected to when the FET is
turned off. This capacitor also controls the hiccup mode
timeout period.
CDLY2: An external cap can be tied between this pin
and AN4 to extend the blanking time on the second current limit tier.
CLCNT: This pin programs the IC for three or four cell
operation. Tying this pin low (to AN4) sets four cell operation, w`hile tying it high (to VDD or the preferred DSPLY
or ASPLY) sets three cell operation. This pin is internally
pulled low, so open circuit conditions will always result in
four cell mode.
DCHG: This pin is used to prevent overdischarge. If the
state machine indicates that any cell is undervoltage, this
pin will be driven high with respect to chip substrate so
that the external P-channel MOSFET will prevent further
discharge. If all cell voltages are above the minimum
threshold, this pin will be driven low.
CHG: This pin is used to control an external N-channel
MOSFET, which in turn drives a P-channel MOSFET. If at
least one cell voltage is over the OV threshold, this pin
will be driven low with respect to AN4. If all cell voltages
are below this threshold, this pin will be driven high.
DVDD: Internal digital supply bypass capacitor pin. Connect a 0.1µF capacitor between this pin and AN4. This
pin is nominally 7.3V.
VDD: Supply voltage to the IC. Connect this point to the
top of the lithium-ion battery stack.
WU: This pin is used to provide a wake up signal to the
IC during sleep mode. Connect this pin to the drain of the
N-channel level shift MOSFET.
ELECTRICAL CHARACTERISTICS: Unless otherwise specified, VDD = 16V and –20°C < T
A
< 70°C, TA= TJ.
All voltages measured with respect to the AN4 terminal.
PARAMETER TEST CONDITIONS MIN TYP MAX UNITS
State Transitions (continued)
UV to DCHG Delay (Note 1) 10 17 23 ms
Cell Sample Rate (Note 1) 5 8.5 11.5 ms
Smart Discharge Threshold BATLO Voltage 12 15 20 mV
Wakeup Input Threshold With Respect to V
DD 50 mV
Charge Enable Input Threshold 0.8 1.3 2.6 V
Short Circuit Protection
First Tier Threshold Level V
BATLO
120 150 180 mV
Second Tier Threshold Level V
BATLO
300 375 450 mV
First Tier Blanking Time CDLY1 = 0.1µF 305070ms
Restart Time CDLY1 = 0.1µF 300 500 700 ms
Second Tier Blanking Time CDLY2 = 10pF 200 400 550 µs
Note 1: Tested at probe only.
Note 2: Other OV/UV thresholds are available. Please consult the factory.