TEXAS INSTRUMENTS TPS793xx Technical data

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324

5

DBV PACKAGE

(TOP VIEW)

1IN

GND

EN

OUT

NR

Fixed Option

324

6

DBV PACKAGE

(TOP VIEW)

1

IN

GND

EN

OUT

NR

5

FB

Adjustable Option

TPS79328

RIPPLE REJECTION

vs

FREQUENCY

IN

EN

OUT

NR

GND

YEQ, YZQ

PACKAGE

(TOP VIEW)

10 100 1 k 10 k

10

40

80

100 k 1 M 10 M

Ripple Rejection (dB)

Frequency (Hz)

I

OUT

= 10 mA

50

0

VIN = 3.8 V C

OUT

= 10 µF

C

NR

= 0.01 µF

I

OUT

= 200 mA

20

30

60

70

90

100

A3 A1

C3 C1

B2

0

0.05

0.10

0.15

0.20

0.25

0.30

100 1 k 10 k 100 k

Frequency (Hz)

I

OUT

= 1 mA

VIN = 3.8 V C

OUT

= 2.2 µF

C

NR

= 0.1 µF

I

OUT

= 200 mA

TPS79328

OUTPUT SPECTRAL NOISE DENSITY

vs

FREQUENCY

Output Spectral Noise Density (µV/√Hz)

TPS793xx

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SLVS348K – JULY 2001 – REVISED OCTOBER 2007

ULTRALOW-NOISE, HIGH PSRR, FAST RF 200mA LOW-DROPOUT LINEAR

REGULATORS IN NanoStar™ WAFER CHIP SCALE AND SOT23

1

FEATURES DESCRIPTION

234

• 200mA RF Low-Dropout Regulator

With Enable

• Available in Fixed Voltage Versions from 1.8V

to 4.75V and Adjustable (1.22V to 5.5V)

• High PSRR (70dB at 10kHz)

• Ultralow-Noise (32 μ V

, TPS79328)

RMS

• Fast Start-Up Time (50 μ s)

• Stable With a 2.2 μ F Ceramic Capacitor

• Excellent Load/Line Transient Response

• Very Low Dropout Voltage (112mV at 200mA,

TPS79330)

• 5- and 6-Pin SOT23 (DBV) and NanoStar Wafer

Chip Scale (YEQ, YZQ) Packages

APPLICATIONS

• RF: VCOs, Receivers, ADCs current is reduced to less than 1 μ A. The TPS79328

• Audio

• Cellular and Cordless Telephones

• Bluetooth

• Handheld Organizers, PDAs

®

, Wireless LAN

The TPS793xx family of low-dropout (LDO) low-power linear voltage regulators features high power-supply rejection ratio (PSRR), ultralow-noise, fast start-up, and excellent line and load transient responses in NanoStar wafer chip scale and SOT23 packages. NanoStar packaging gives an ultrasmall footprint as well as an ultralow profile and package weight, making it ideal for portable applications such as handsets and PDAs. Each device in the family is stable, with a small 2.2 μ F ceramic capacitor on the output. The TPS793xx family uses an advanced, proprietary BiCMOS fabrication process to yield extremely low dropout voltages (for example, 112mV at 200mA, TPS79330). Each device achieves fast start-up times (approximately 50 μ s with a 0.001 μ F bypass capacitor) while consuming very low quiescent current (170 μ A typical). Moreover, when the device is placed in standby mode, the supply

exhibits approximately 32 μ V

RMS

noise at 2.8V output with a 0.1 μ F bypass capacitor. Applications with analog components that are noise-sensitive, such as portable RF electronics, benefit from the high PSRR and low-noise features as well as the fast response time.

of output voltage

1

2 NanoStar is a trademark of Texas Instruments. 3 Bluetooth is a registered trademark of Bluetooth SIG, Inc. 4 All other trademarks are the property of their respective owners.

PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

Figure 1.

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TPS793xx

SLVS348K – JULY 2001 – REVISED OCTOBER 2007

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

ORDERING INFORMATION

PRODUCT V

(1)

(2)

OUT

TPS793 xxyyyz XX is nominal output voltage (for example, 28 = 2.8V, 285 = 2.85V, 01 = Adjustable).

YYY is package designator. Z is package quantity.

(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI

website at www.ti.com .

(2) Output voltages from 1.2V to 4.8V in 50mV increments are available; minimum order quantities may apply. Contact factory for details

and availability.

ABSOLUTE MAXIMUM RATINGS

Over operating temperature range (unless otherwise noted)

VINrange – 0.3V to 6V V

range – 0.3V to 6V

EN

V

range – 0.3V to 6V

OUT

Peak output current Internally limited ESD rating, HBM 2kV ESD rating, CDM 500V Continuous total power dissipation See Dissipation Ratings Table Junction temperature range, DBV package – 40 ° C to +150 ° C Junction temperature range, YEQ package – 40 ° C to +125 ° C Storage temperature range, T

(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings

only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

stg

(1)

UNIT

– 65 ° C to +150 ° C

DISSIPATION RATINGS TABLE

BOARD PACKAGE R

(1)

Low-K

(2)

High-K

(1)

Low-K

(2)

High-K

DBV 65 ° C/W 255 ° C/W 3.9mW/ ° C 390mW 215mW 155mW DBV 65 ° C/W 180 ° C/W 5.6mW/ ° C 560mW 310mW 225mW YEQ 27 ° C/W 255 ° C/W 3.9mW/ ° C 390mW 215mW 155mW YEQ 27 ° C/W 190 ° C/W 5.3mW/ ° C 530mW 296mW 216mW

θ JC

R

θ JA

ABOVE TA= +25 ° C RATING RATING RATING

(1) The JEDEC low-K (1s) board design used to derive this data was a 3-inch x 3-inch, two layer board with 2 ounce copper traces on top

of the board.

(2) The JEDEC high-K (2s2p) board design used to derive this data was a 3-inch x 3-inch, multilayer board with 1 ounce internal power and

ground planes and 2 ounce copper traces on top and bottom of the board.

DERATING FACTOR POWER POWER POWER

TA≤ +25 ° C TA= +70 ° C TA= +85 ° C

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TPS793xx

SLVS348K – JULY 2001 – REVISED OCTOBER 2007

ELECTRICAL CHARACTERISTICS

Over recommended operating temperature range TJ= – 40 ° C to +125 ° C, V C

OUT

= 10 μ F, C

= 0.01 μ F (unless otherwise noted). Typical values are at +25 ° C.

NR

EN

= VIN, V

= V

IN

OUT(nom)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

VINInput voltage I

Continuous output current 0 200 mA

OUT

V

Internal reference (TPS79301) 1.201 1.225 1.250 V

FB

Output voltage range (TPS79301) V

Output voltage TPS793285 0 μ A < I

Line regulation ( Δ V Load regulation ( Δ V

Dropout voltage (V

= V

IN

OUT(nom)

Output current limit V GND pin current 0 μ A < I Shutdown current FB pin current V

Power-supply ripple rejection TPS79328 dB

Output noise voltage (TPS79328) μ V

Time, start-up (TPS79328) RL= 14 Ω , C

(1)

TPS79318 0 μ A < I TPS79325 0 μ A < I TPS79328 0 μ A < I

TPS79330 0 μ A < I TPS79333 0 μ A ≤ I TPS793475 0 μ A < I

(1)

%/ Δ VIN)

OUT

%/ Δ I

OUT

) 0 μ A < I

OUT

TPS79328 I

(2)

– 0.1V)

TPS793285 I TPS79330 I TPS79333 I TPS793475 I

(3)

V

OUT

OUT OUT OUT OUT OUT

OUT

V

EN FB

f = 100Hz, TJ= +25 ° C, I f = 100Hz, TJ= +25 ° C, I f = 10kHz, TJ= +25 ° C, I f = 100kHz, TJ= +25 ° C, I

BW = 200Hz to 100kHz, I

OUT

< 200mA, 2.8V < VIN< 5.5V 1.764 1.8 1.836 V

OUT

< 200mA, 3.5V < VIN< 5.5V 2.45 2.5 2.55 V

OUT

< 200mA, 3.8V < VIN< 5.5V 2.744 2.8 2.856 V

OUT

< 200mA, 3.85V < VIN< 5.5V 2.793 2.85 2.907 V

OUT

< 200mA, 4V < VIN< 5.5V 2.94 3 3.06 V

OUT

< 200mA, 4.3V < VIN< 5.5V 3.234 3.3 3.366 V

OUT

< 200mA, 5.25V < VIN< 5.5V 4.655 4.75 4.845 V

OUT

+ 1V < VIN≤ 5.5V 0.05 0.12 %/V

< 200mA, TJ= +25 ° C 5 mV

OUT

= 200mA 120 200 = 200mA 120 200 = 200mA 112 200 mV = 200mA 102 180 = 200mA 77 125

= 0V 285 600 mA

< 200mA 170 220 μ A

OUT

= 0V, 2.7V < VIN< 5.5V 0.07 1 μ A

= 1.8V 1 μ A

= 10mA 70

OUT

= 200mA 68

OUT

= 200mA 70

OUT

= 200mA 43

OUT

C

= 0.001 μ F 55

NR

C

= 0.0047 μ F 36

= 200mA

= 1 μ F C

OUT

NR

C

= 0.01 μ F 33

NR

C

= 0.1 μ F 32

NR

C

= 0.001 μ F 50

NR

= 0.0047 μ F 70 μ s

NR

C

= 0.01 μ F 100

NR

2.7 5.5 V

FB

High level enable input voltage 2.7V < VIN< 5.5V 1.7 V Low level enable input voltage 2.7V < VIN< 5.5V 0 0.7 V EN pin current V UVLO threshold V

= 0V – 1 1 μ A

EN

rising 2.25 2.65 V

CC

UVLO hysteresis 100 mV

(1) Minimum VINis 2.7V or V (2) Dropout is not measured for the TPS79318 and TPS79325 since minimum VIN= 2.7V. (3) For adjustable versions, this parameter applies only after VINis applied; then V

+ VDO, whichever is greater.

OUT

transitions high to low.

EN

(1)

+ 1V

, I

= 1mA,

OUT

5.5 – V

DO

IN

V

RMS

V

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_

+

Thermal

Shutdown

Bandgap

Reference

1.22V

Current

Sense

R2

GND

EN

SHUTDOWN

V

ref

UVLO

ILIM

External to the Device

R1

UVLO

2.45V

250 kΩ

NR

FB

59 k

QuickStart

OUTIN

IN

_

+

Thermal

Shutdown

Current

Sense

R1

R2

GND

EN

SHUTDOWN

V

ref

UVLO

ILIM

250 kΩ

NR

QuickStart

Bandgap

Reference

1.22V

UVLO

2.45V

R2 = 40 kΩ

IN

IN OUT

TPS793xx

SLVS348K – JULY 2001 – REVISED OCTOBER 2007

ADJUSTABLE VERSION

FUNCTIONAL BLOCK DIAGRAMS

FIXED VERSION

Table 1. Terminal Functions

TERMINAL

NAME ADJ FIXED FIXED DESCRIPTION

GND 2 2 A1 Regulator ground

OUT 6 5 C1 Output of the regulator.

SOT23 SOT23 WCSP

NR 4 4 B2

EN 3 3 A3 FB 5 N/A N/A This terminal is the feedback input voltage for the adjustable device.

IN 1 1 C3 Input to the device.

Connecting an external capacitor to this pin bypasses noise generated by the internal bandgap. This improves power-supply rejection and reduces output noise.

Driving the enable pin (EN) high turns on the regulator. Driving this pin low puts the regulator into shutdown mode. EN can be connected to IN if not used.

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2.795

2.796

2.797

2.798

2.799

2.800

2.801

2.802

2.803

2.804

2.805

0 50 100 150 200

I

OUT

(mA)

VIN = 3.8 V C

OUT

= 10 µF

TJ = 25°C

V

OUT

(V)

0

50

100

150

200

250

−40−25−10 5 20 35 50 65 80 95 110 125

TJ (°C)

I

OUT

= 1 mA

VIN = 3.8 V C

OUT

= 10 µF

I

OUT

= 200 mA

I

GND

(µA)

2.775

2.780

2.785

2.790

2.795

2.800

2.805

−40−25−10 5 20 35 50 65 80 95 110 125

T

J

(°C)

I

OUT

= 200 mA

I

OUT

= 1 mA

VIN = 3.8 V C

OUT

= 10 µF

V

OUT

(V)

0

0.05

0.10

0.15

0.20

0.25

0.30

100 1 k 10 k 100 k

Frequency (Hz)

I

OUT

= 1 mA

VIN = 3.8 V C

OUT

= 2.2 µF

C

NR

= 0.1 µF

I

OUT

= 200 mA

Output Spectral Noise Density (µV/√Hz)

0

0.05

0.10

0.15

0.20

0.25

0.30

100 1 k 10 k 100 k

Frequency (Hz)

I

OUT

= 1 mA

I

OUT

= 200 mA

VIN = 3.8 V C

OUT

= 10 µF

C

NR

= 0.1 µF

Output Spectral Noise Density (µV/√Hz)

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

100 1 k 10 k 100 k

Frequency (Hz)

VIN = 3.8 V I

OUT

= 200 mA

C

OUT

= 10 µF

CNR = 0.1 µF

CNR = 0.001 µF

CNR = 0.0047 µF

CNR = 0.01 µF

Output Spectral Noise Density (µV/√Hz)

100 1 M10 1 k

Frequency (Hz)

10 k 100 k

I

OUT

= 1 mA

0

0.5

1.0

1.5

2.0

2.5

0

I

OUT

= 100 mA

10 M

VIN = 3.8 V C

OUT

= 10 µF

TJ = 25° C

ZO (Ω)

0

20

40

60

80

100

120

140

160

180

−40−25−10 5 20 35 50 65 80 95 110 125

I

OUT

= 200 mA

I

OUT

= 10 mA

VIN = 2.7 V C

OUT

= 10 µF

TJ (°C)

V

DO

(mV)

0.001 0.01 0.1

C

NR

(µF)

0

10

20

30

40

50

60

V

OUT

= 2.8 V

I

OUT

= 200 mA

C

OUT

= 10 µF

BW = 100 Hz to 100 kHz

RMS, Output Noise (V

RMS

)

SLVS348K – JULY 2001 – REVISED OCTOBER 2007

TYPICAL CHARACTERISTICS (SOT23 PACKAGE)

TPS79328 TPS79328 TPS79328

OUTPUT VOLTAGE OUTPUT VOLTAGE GROUND CURRENT

vs vs vs

OUTPUT CURRENT JUNCTION TEMPERATURE JUNCTION TEMPERATURE

Figure 2. Figure 3. Figure 4.

TPS79328 OUTPUT SPECTRAL TPS79328 OUTPUT SPECTRAL TPS79328 OUTPUT SPECTRAL

NOISE DENSITY NOISE DENSITY NOISE DENSITY

vs vs vs

FREQUENCY FREQUENCY FREQUENCY

TPS793xx

ROOT MEAN SQUARE OUTPUT TPS79328

Figure 5. Figure 6. Figure 7.

NOISE OUTPUT IMPEDANCE DROPOUT VOLTAGE

vs vs vs

C

NR

FREQUENCY JUNCTION TEMPERATURE

Figure 8. Figure 9. Figure 10.

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10 100 1 k 10 k

10

40

80

100 k 1 M 10 M

Ripple Rejection (dB)

Frequency (Hz)

I

OUT

= 10 mA

50

0

VIN = 3.8 V C

OUT

= 10 µF

CNR = 0.01 µF

I

OUT

= 200 mA

20

30

60

70

90

100

10 100 1 k 10 k

20

60

100

100 k 1 M 10 M

Ripple Rejection (dB)

Frequency (Hz)

VIN = 3.8 V C

OUT

= 2.2 µF

CNR = 0.01 µF

I

OUT

= 10 mA

I

OUT

= 200 mA

40

70

90

30

50

80

10

0

10 100 1 k 10 k

20

60

100

100 k 1 M 10 M

Ripple Rejection (dB)

Frequency (Hz)

VIN = 3.8 V C

OUT

= 2.2 µF

CNR = 0.1 µF

I

OUT

= 10 mA

I

OUT

= 200 mA

40

70

90

30

50

80

10

0

3

Time (µs)

0 604020 80 100 140120 160 180 200

VIN = 3.8 V V

OUT

= 2.8 V

I

OUT

= 200 mA

C

OUT

= 2.2 µF

TJ = 25°C

1

2 0

0

2

CNR = 0.0047 µF

CNR = 0.01 µF

4

CNR = 0.001 µF

V

EN

(V)V

OUT

(V)

Time (µs)

0 302010 40 50 7060 80 90 100

I

OUT

= 200 mA

C

OUT

= 2.2 µF

CNR = 0.01 µF

0

-20

3.8

dv

dt

+

0.4 V

µs

20

4.8

V

IN

(mV) V

OUT

(mV)

Time (µs)

0

0 15010050 200 250 350300 400 450

20

0

−20

100

500

VIN = 3.8 V C

OUT

= 10 µF

−40

200

300

di dt

+

0.02A

µs

1mA

I

OUT

(mA) ∆V

OUT

(mV)

500 mV/div

1s/div

V

IN

V

OUT

V

OUT

= 3 V

RL = 15 Ω

100

50

0 20 40 60 80 100 120

150

200

250

140 160 180 200

0

I

OUT

(mA)

TJ = 125°C

TJ = 25°C

TJ = −55°C

V

DO

(mV)

0

50

100

150

200

2.5 3.0 3.5 4.0 4.5

5.0

V

IN

(V)

I

OUT

= 200 mA

TJ = 25°C

TJ = −40°C

TJ = 125°C

V

DO

(mV)

TPS793xx

SLVS348K – JULY 2001 – REVISED OCTOBER 2007

TYPICAL CHARACTERISTICS (SOT23 PACKAGE) (continued)

TPS79328 TPS79328 TPS79328

RIPPLE REJECTION RIPPLE REJECTION RIPPLE REJECTION

TPS79328 OUTPUT VOLTAGE,

ENABLE VOLTAGE

vs vs vs

FREQUENCY FREQUENCY FREQUENCY

Figure 11. Figure 12. Figure 13.

vs TPS79328 TPS79328

TIME (START-UP) LINE TRANSIENT RESPONSE LOAD TRANSIENT RESPONSE

POWER-UP / POWER-DOWN OUTPUT CURRENT INPUT VOLTAGE

Figure 14. Figure 15. Figure 16.

DROPOUT VOLTAGE DROPOUT VOLTAGE

vs vs

Figure 17. Figure 18. Figure 19.

TPS79301