•Programmable Power Limiting and Current
Limiting for Complete SOA Protection
•Wide Operating Range: +9 V to +80 V
•Latched Operation (TPS2490) and Automatic
Retry (TPS2491)
•High-side Drive for Low-R
DS(on)
External
N-channel MOSFET
•Programmable Fault Timer to Protect the
MOSFET and Eliminate Nuisance Shutdowns
•Power Good Open-Drain Output for Downstream DC/DC Coordination
•Enable can be used as a Programmable
Undervoltage Lockout or Logic Control
•Small, Space-saving 10-pin MSOP Package
•Server Backplanes
•Storage Area Networks (SAN)
•Medical Systems
•Plug-in Modules
•Base Stations
TPS2490
TPS2491
SLVS503–NOVEMBER 2003
DESCRIPTION
The TPS2490 and TPS2491 are easy-to-use, positive high voltage, 10-pin Hot Swap Power Manager™ devices
that safely drive an external N-channel MOSFET switch. The power limit and current limit (both are adjustable
and independent of each other) ensure that the external MOSFET operates inside a selected safe operating area
(SOA) under the harshest operating conditions. Applications include inrush current limiting, electronic circuit
breaker protection, controlled load turn-on, interfacing to down-stream dc-to-dc converters, and power feed
protection. These devices are available in a small, space-saving 10-pin MSOP package and significantly reduce
the number of external devices, saving precious board space. The TPS2490/91 is supported by application
notes, an evaluation module, and a design tool.
Typical Application and Corresponding SOA
Hot Swap Power Manager is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
ORDERING INFORMATION
TAFUNCTIONPACKAGEPART NUMBER
-40°C to 85°C
(1) Add an R suffix to the device type for tape and reel packaging.
LatchedVSSOP-10TPS2490DGSBIY
Retry(MSOP)TPS2491DGSBIX
(1)
SYMBOL
ABSOLUTE MAXIMUM RATINGS
(1)
over operating free-air temperature range (unless otherwise noted)
UNIT
Input voltage range, VCC, SENSE, EN, OUT-0.3 to 100V
Output voltage range, GATE, PG-0.3 to 100V
Input voltage range, PROG-0.3 to 6V
Output voltage range, TIMER, VREF-0.3 to 6V
Sink current, PG10mA
Source current, VREF0 to 2mA
Sink Current, PROG2mA
ESD - human body model2kV
ESD - charged device model500V
Maximum junction temperature, T
Storage temperature, T
Lead temperature 1.6 mm (1/16 inch) from case for 10 seconds260°C
(1) Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating
conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability
ST
J
150°C
–65 to 150°C
RECOMMENDED OPERATING CONDITIONS
MINNOMMAXUNIT
V
V
I
VREF
T
T
VCC
PROG
J
A
Input voltage range980V
Input voltage range04V
Operating current range (sourcing), V
Operating junction temperature-40125°C
Operating free-air temperature-4085°C
REF
01mA
DISSIPATION RATING TABLE
PACKAGETA<25°CDERATING FACTORTA= 70°CTA= 85°C
POWER RATINGABOVE TA= 25°CPOWER RATINGPOWER RATING
mW(mW/°C)(mW)(mW)
VSSOP-10 (MSOP)3763.76207150
2
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TPS2490
TPS2491
SLVS503–NOVEMBER 2003
ELECTRICAL CHARACTERISTICS
unless otherwise noted, minimum and maximum limits apply across the recommended operating junction temperature and
voltage range, V
all outputs unloaded; positive currents are into pins.
SUPPLY CURRENT (VCC)
EnabledVEN= Hi, V
DisabledVEN= Lo, V
CURRENT SENSE INPUT (SENSE)
I
SENSE
REFERENCE VOLTAGE OUTPUT (VREF)
V
REF
POWER LIMITING INPUT (PROG)
I
PROG
R
PROG
POWER LIMITING AND CURRENT LIMITING (SENSE)
V
CL
V
SENSE
t
F_TRIP
TIMER OPERATION (TIMER)
D
RETRY
GATE DRIVE OUTPUT (GATE)
I
GATE
t
D_ON
t
D_OFF
POWER GOOD OUTPUT (PG)
V
PG_L
V
PGTL
Input bias currentV
Reference voltage0 < I
Input bias current, device enabled, sourcing or
sinking
Propagation delay: EN going true to GATEVEN= 0 → 2.5 V, 50% of VENto 50% of
output high
Propagation delay: EN going false (0 V) to
GATE output low
Propagation delay: TIMER expires to GATE
output low
Low voltage (sinking)
PG threshold voltage, V
open drain
= 0 V, and all outputs unloaded; typical specifications are at TJ= 25°C, V
TIMER
VCC
= 48 V, V
TIMER
= 0 V, and
PARAMETERTEST CONDITIONSMINTYPMAX UNIT
= V
SENSE
SENSE
= V
SENSE
VREF
0 < V
PROG
= 200 µA, VEN= 0 V375600Ω
PROG
(VCC-SENSE)
(VCC-sense)
withV
withoutV
(1)
PROG
PROG
PROG
V
PROG
V
(VCC-SENSE)
C
(GATE-OUT)
V
TIMER
V
TIMER
V
TIMER
V
TIMER
V
SENSE
VEN= Hi
VEN= Lo, V
VEN= Hi, V
V
(VCC-SENSE)
(GATE-OUT)
(1)
V
GATE
, V
, V
VCC
< 1 mA3.944.1V
< 4 V, VEN= 48 V5µA
= 2.4 V, V
= 0.9 V, V
= 4 V, V
SENSE
= 4 V, V
OUT
: 0 → 200 mV,1.2µS
= 2 nF, V
= 0 V15.025.034.0µA
= 0 V, TJ= 25°C20.025.030.0µA
= 5 V1.502.53.70µA
= 5 V, TJ= 25°C2.102.53.10µA
= V
, V
VCC
= V
GATE
= V
GATE
≥ 200 mV
= V
OUT
VCC
= V
OUT
VCC
= V
= V
VCC
= V
OUT
= 0 V or
OUT
= 30 V, V
OUT
= V
= V
SENSE
(GATE-OUT)
(GATE-OUT)
VCC
,75125250mA
VCC
, R
(GATE-OUT)
= 090250µA
OUT
VCC
= 48 V
VCC
OUT
,
= 1 V
= 7 V,
= 1 MΩ
4501000µA
7.520µA
172533mV
455055mV
1.82.42.8mA
1216V
2540µS
VEN= 2.5 V → 0, 50% of VENto 50% of
V
, V
= V
(1)
(1)
GATE
R
(GATE-OUT)
V
TIMER
V
TIMER
R
(GATE-OUT)
OUT
= 1 MΩ, t
: 0 → 5 V, t
to 50% of V
,0.51µS
VCC
= 1 MΩ,
< 0.1 µS
FALL
< 0.1 µS, 50% of
RISE
, V
GATE
OUT
= V
,0.81µS
VCC
IPG= 2 mA0.10.25V
IPG= 4 mA0.250.5V
rising, PG goes
OUT
V
SENSE
= V
, measure V
VCC
(VCC-OUT)
0.81.251.7V
(1) Not tested in production.
3
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TPS2490
TPS2491
SLVS503–NOVEMBER 2003
ELECTRICAL CHARACTERISTICS (continued)
unless otherwise noted, minimum and maximum limits apply across the recommended operating junction temperature and
voltage range, V
all outputs unloaded; positive currents are into pins.
VPGTHV
∆V
PGT
t
DPG
OUTPUT VOLTAGE FEEDBACK INPUT (OUT)
I
OUT
ENABLE INPUT (EN)
V
EN_H
V
EN_L
INPUT SUPPLY UVLO (VCC)
PG threshold voltage, V
low
PG threshold hysteresis voltage, V
PG deglitch delay, detection to output, rising
and falling edges
Leakage current, PG false, open drain10µA
Bias current
Threshold, VENgoing high1.321.351.38V
Threshold, VENgoing low1.221.251.28V
VENhysteresis
Leakage currentVEN= 48 V1µA
V
VCC
V
VCC
Hysteresis
= 0 V, and all outputs unloaded; typical specifications are at TJ= 25°C, V