Texas Instruments TLV2221IDBVR, TLV2221CDBVT, TLV2221CDBVR, TLV2221IDBVT Datasheet

TLV2221, TLV2221Y
Advanced LinCMOS RAIL-TO-RAIL
VERY LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS157A – JUNE1996 – REVISED JANUARY 1997
1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
D
D
Low Noise...19 nV/√Hz Typ at f = 1 kHz
D
Low Input Bias Current...1 pA Typ
D
Fully Specified for Single-Supply 3-V and 5-V Operation
D
Very Low Power...110 µA Typ
D
Common-Mode Input Voltage Range Includes Negative Rail
D
Wide Supply Voltage Range
2.7 V to 10 V
D
Macromodel Included
description
The TL V2221 is a single operational amplifier manufactured using the T exas Instruments Advanced LinCMOS process. This device is optimized and fully specified for single-supply 3-V and 5-V operation. For this low-voltage operation combined with micropower dissipation levels, the input noise voltage performance has been dramatically improved using optimized design techniques for CMOS-type amplifiers. Another added benefit is that this amplifier exhibits rail-to-rail output swing. The output dynamic range can be extended using the TL V2221 with loads referenced midway between the rails. The common-mode input voltage range is wider than typical standard CMOS-type amplifiers. To take advantage of this improvement in performance and to make this device available for a wider range of applications, V
ICR
is specified with a larger maximum input offset voltage test limit of ± 5 mV , allowing a minimum of 0-V to 2-V common-mode input voltage range for a 3-V power supply .
AVAILABLE OPTIONS
°
PACKAGED DEVICES
CHIP
T
A
VIOmax AT 25°C
SOT-23 (DBV)
SYMBOL
FORM
(Y)
0°C to 70°C 3 mV TLV2221CDBV VADC
–40°C to 85°C 3 mV TLV2221IDBV VADI
TLV2221Y
The DBV package available in tape and reel only.
The Advanced LinCMOS process uses a silicon-gate technology to obtain input offset voltage stability with temperature and time that far exceeds that obtainable using metal-gate technology . This technology also makes possible input impedance levels that meet or exceed levels offered by top-gate JFET and expensive dielectric-isolated devices.
The TLV2221, exhibiting high input impedance and low noise, is excellent for small-signal conditioning for high-impedance sources such as piezoelectric transducers. Because of the low power dissipation levels combined with 3-V operation, this device works well in hand-held monitoring and remote-sensing applications. In addition, the rail-to-rail output feature with single or split power supplies makes this device an excellent choice when interfacing directly to analog-to-digital converters (ADCs). All of these features combined with its temperature performance make the TLV2221 ideal for remote pressure sensors, temperature control, active voltage-resistive (VR) sensors, accelerometers, hand-held metering devices, and many other applications.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
DBV PACKAGE
(TOP VIEW)
5
43
1
2
IN–
V
DD–
/GND
IN+ V
DD+
OUT
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
Copyright 1997, Texas Instruments Incorporated
Advanced LinCMOS is a trademark of Texas Instruments Incorporated.
TLV2221, TLV2221Y Advanced LinCMOS RAIL-TO-RAIL VERY LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS157A – JUNE1996 – REVISED JANUARY 1997
2
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
description (continued)
The device inputs and outputs are designed to withstand a 100-mA surge current without sustaining latch-up. In addition, internal ESD-protection circuits prevent functional failures up to 2000 V as tested under MIL-PRF-38535; however, care should be exercised when handling these devices as exposure to ESD may result in degradation of the device parametric performance. Additional care should be exercised to prevent V
DD +
supply-line transients under powered conditions. Transients of greater than 20 V can trigger the
ESD-protection structure, inducing a low-impedance path to V
DD –
/GND. Should this condition occur, the sustained current supplied to the device must be limited to 100 mA or less. Failure to do so could result in a latched condition and device failure.
TLV2221, TLV2221Y
Advanced LinCMOS RAIL-TO-RAIL
VERY LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS157A – JUNE1996 – REVISED JANUARY 1997
3
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
TLV2221Y chip information
This chip, when properly assembled, displays characteristics similar to the TL V2221C. Thermal compression or ultrasonic bonding may be used on the doped-aluminum bonding pads. This chip may be mounted with conductive epoxy or a gold-silicon preform.
BONDING PAD ASSIGNMENTS
CHIP THICKNESS: 10 MILS TYPICAL BONDING PADS: 4 × 4 MILS MINIMUM TJmax = 150°C TOLERANCES ARE ±10%. ALL DIMENSIONS ARE IN MILS. PIN (2) IS INTERNALLY CONNECTED
TO BACKSIDE OF CHIP.
+
OUT
IN+
IN–
V
DD+
(5)
(1)
(3)
(4)
(2)
V
DD–
/GND
40
(3)
(2)
(1)
(5)
(4)
32
TLV2221, TLV2221Y
VERY LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS157A – JUNE 1996 – REVISED JANUARY 1997
Template Release Date: 7–11–94
Advanced LinCMOSRAIL-TO-RAIL
4
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
equivalent schematic
Q3 Q6 Q9 Q12 Q14 Q16
Q2 Q5 Q7 Q8 Q10 Q11
D1
Q17Q15Q13
Q4Q1
R5
C1
V
DD+
IN+
IN–
R3
R7
R1
R2
OUT
V
DD–/ GND
COMPONENT COUNT
Transistors Diodes Resistors Capacitors
23 5 11 2
Includes both amplifiers and all ESD, bias, and trim circuitry
R6
C2
R4
TLV2221, TLV2221Y
Advanced LinCMOS RAIL-TO-RAIL
VERY LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS157A – JUNE 1996 – REVISED JANUARY 1997
5
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Supply voltage, V
DD
(see Note 1) 12 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Differential input voltage, V
ID
(see Note 2) ±V
DD
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input voltage range, V
I
(any input, see Note 1) –0.3 V to V
DD
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input current, I
I
(each input) ±5 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output current, I
O
±50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total current into V
DD+
±50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total current out of V
DD–
±50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Duration of short-circuit current (at or below) 25°C (see Note 3) unlimited. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous total power dissipation See Dissipation Rating Table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating free-air temperature range, T
A
: TLV2221C 0°C to 70°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TLV2221I –40°C to 85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range, T
stg
–65°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds: DBV package 260°C. . . . . . . . . . . . . . . . . .
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. All voltage values, except differential voltages, are with respect to V
DD –
.
2. Differential voltages are at the noninverting input with respect to the inverting input. Excessive current flows when input is brought below V
DD–
– 0.3 V.
3. The output can be shorted to either supply. Temperature and /or supply voltages must be limited to ensure that the maximum dissipation rating is not exceeded.
DISSIPATION RATING TABLE
T
25°C DERATING FACTOR T
= 70°C T
= 85°C
PACKAGE
A
POWER RATING ABOVE TA = 25°CAPOWER RATINGAPOWER RATING
DBV 150 mW 1.2 mW/°C 96 mW 78 mW
recommended operating conditions
TLV2221C TLV2221I
MIN MAX MIN MAX
UNIT
Supply voltage, VDD(see Note 1)
2.7 10 2.7 10 V
Input voltage range, V
I
V
DD–VDD+
–1.3 V
DD–VDD+
–1.3 V
Common-mode input voltage, V
IC
V
DD–VDD+
–1.3 V
DD–VDD+
–1.3 V
Operating free-air temperature, T
A
0 70 –40 85 °C
NOTE 1: All voltage values, except differential voltages, are with respect to V
DD –
.
TLV2221, TLV2221Y Advanced LinCMOS RAIL-TO-RAIL VERY LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS157A – JUNE 1996 – REVISED JANUARY 1997
6
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
electrical characteristics at specified free-air temperature, VDD = 3 V (unless otherwise noted)
TLV2221C TLV2221I
PARAMETER
TEST CONDITIONS
T
A
MIN TYP MAX MIN TYP MAX
UNIT
V
IO
Input offset voltage
0.62 3 0.62 3 mV
Temperature
p
Full range
°
α
VIO
coe
fficient of i
npu
t
offset voltage
1
1µV/°C
Input offset voltage long-term drift (see Note 4)
V
DD±
= ±1.5 V,
VO = 0,
V
IC
= 0,
RS = 50
25°C
0.003 0.003 µV/mo
p
25°C 0.5 0.5
p
IIOInput offset current
Full range 150 150
pA
p
25°C 1 1
p
IIBInput bias current
Full range 150 150
pA
0 –0.3 0 –0.3
25°C
0to0.3to0to0.3
to
Common-mode input
2 2.2 2 2.2
V
ICR
voltage range
R
S
= 50 Ω,
|VIO| ≤5 mV
0 0
V
Full range
0to0
to
g
1.7 1.7
IOH = –100 µA 25°C 2.97 2.97
V
OH
High-level output
25°C 2.88 2.88
V
voltage
I
OH
= –
400 µA
Full range 2.5 2.5
VIC = 1.5 V, IOL = 50 µA 25°C 15 15
V
OL
Low-level output
25°C 150 150
mV
voltage
V
IC
=
1.5 V
,
I
OL
=
500 µA
Full range 500 500
-
25°C 2 3 2 3
A
VD
Large signal
differential voltage
VIC = 1.5 V,
R
L
=
2 k
Full range 1 1
V/mV
VD
amplification
V
O
= 1 V to 2
V
RL = 1 M
25°C 250 250
r
id
Differential input resistance
25°C 10
12
10
12
r
ic
Common-mode input resistance
25°C 10
12
10
12
c
ic
Common-mode input capacitance
f = 10 kHz 25°C 6 6 pF
z
o
Closed-loop output impedance
f = 10 kHz, AV = 10 25°C 90 90
Common-mode V
= 0 to 1.7 V,
25°C 70 82 70 82
CMRR
rejection ratio
IC
,
VO = 1.5 V, RS = 50
Full range 65 65
dB
Supply voltage
V
= 2.7 V to 8 V,
25°C 80 95 80 95
k
SVR
rejection ratio (VDD /VIO)
DD
,
VIC = VDD/2, No load
Full range 80 80
dB
pp
25°C 100 150 100 150
IDDSupply current
V
O
=
1.5 V
,
No load
Full range 200 200
µ
A
Full range for the TLV2221C is 0°C to 70°C. Full range for the TLV2221I is – 40°C to 85°C.
Referenced to 1.5 V
NOTE 4: T ypical values are based on the input offset voltage shift observed through 500 hours of operating life test at TA = 150°C extrapolated
to TA = 25°C using the Arrhenius equation and assuming an activation energy of 0.96 eV .
TLV2221, TLV2221Y
Advanced LinCMOS RAIL-TO-RAIL
VERY LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS157A – JUNE 1996 – REVISED JANUARY 1997
7
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
operating characteristics at specified free-air temperature, VDD = 3 V
TLV2221C TLV2221I
PARAMETER
TEST CONDITIONS
T
A
MIN TYP MAX MIN TYP MAX
UNIT
25°C
0.1 0.18 0.1 0.18
SR
Slew rate at unit
y
gain
V
O
= 1.1 V to 1.9 V,
CL = 100 pF
R
L
= 2
k
,
Full
range
0.05 0.05
V/µs
Equivalent input
f = 10 Hz 25°C 120 120
V
n
q
noise voltage
f = 1 kHz
25°C 20 20
n
V/H
z
Peak-to-peak
p
f = 0.1 Hz to 1 Hz 25°C 680 680
V
N(PP)
equivalent inpu
t
noise voltage
f = 0.1 Hz to 10 Hz
25°C 860 860
mV
I
n
Equivalent input noise current
25°C 0.6 0.6
fA/Hz
VO = 1 V to 2 V,
AV = 1
°
2.52% 2.52%
Total harmonic
f
= 20 kHz,
RL = 2 k
AV = 10
25°C
7.01% 7.01%
THD+N
distortion plus noise
VO = 1 V to 2 V,
AV = 1
°
0.076% 0.076%
f
= 20 kHz,
RL = 2 k
§
AV = 10
25°C
0.147% 0.147%
Gain-bandwidth product
f = 1 kHz, CL = 100 pF
RL = 2 k‡,
25°C 480 480 kHz
B
OM
Maximum output-swing bandwidth
V
O(PP)
= 1 V,
RL = 2 k‡,
AV = 1, CL = 100 pF
25°C 30 30 kHz
AV = –1, Step = 1 V to 2 V,
To 0.1% 25°C 4.5 4.5 µs
tsSettling time
,
RL = 2 k‡, CL = 100 pF
To 0.01% 25°C 6.8 6.8 µs
φ
m
Phase margin at unity gain
RL = 2 k‡,
C
= 100 pF
25°C 51° 51°
Gain margin
L
,
L
25°C 12 12 dB
Full range is –40°C to 85°C.
Referenced to 1.5 V
§
Referenced to 0 V
TLV2221, TLV2221Y Advanced LinCMOS RAIL-TO-RAIL VERY LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS157A – JUNE 1996 – REVISED JANUARY 1997
8
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
electrical characteristics at specified free-air temperature, VDD = 5 V (unless otherwise noted)
TLV2221C TLV2221I
PARAMETER
TEST CONDITIONS
T
A
MIN TYP MAX MIN TYP MAX
UNIT
V
IO
Input offset voltage
0.61 3 0.61 3 mV
Temperature
p
Full range
°
α
VIO
coe
fficient of i
npu
t
offset voltage
1
1µV/°C
Input offset voltage long-term drift (see Note 4)
V
DD±
= ±2.5 V,
VO = 0,
V
IC
= 0,
RS = 50
25°C
0.003 0.003 µV/mo
p
25°C 0.5 0.5
p
IIOInput offset current
Full range 150 150
pA
p
25°C 1 1
p
IIBInput bias current
Full range 150 150
pA
Common-mode input
25°C
0
to
4
–0.3
to
4.2
0
to
4
–0.3
to
4.2
V
ICR
voltage range
R
S
= 50 Ω,
|VIO| ≤5 mV
Full range
0
to
3.5
0
to
3.5
V
High-level output
IOH = –500 µA
°
4.75 4.88 4.75 4.88
V
OH
g
voltage
IOH = –1 mA
25°C
4.5 4.76 4.5 4.76
V
VIC = 2.5 V, IOL = 50 µA 25°C 12 12
V
OL
Low-level output
25°C 120 120
mV
voltage
V
IC
= 2.5 V,
I
OL
=
500 µA
Full range 500 500
-
25°C 3 5 3 5
A
VD
Large signal
differential voltage
VIC = 2.5 V,
R
L
= 2
k
Full range 1 1
V/mV
VD
amplification
V
O
= 1 V to 4
V
RL = 1 M
25°C 800 800
r
id
Differential input resistance
25°C 10
12
10
12
r
ic
Common-mode input resistance
25°C 10
12
10
12
c
ic
Common-mode input capacitance
f = 10 kHz 25°C 6 6 pF
z
o
Closed-loop output impedance
f = 10 kHz, AV = 10 25°C 70 70
Common-mode V
= 0 to 2.7 V,
V
= 1.5 V,
25°C 70 85 70 85
CMRR
rejection ratio
IC
,
RS = 50
O
,
Full range 65 65
dB
Supply voltage
V
= 4.4 V to 8 V,
25°C 80 95 80 95
k
SVR
rejection ratio (VDD /VIO)
DD
,
VIC = VDD/2, No load
Full range 80 80
dB
pp
25°C 110 150 110 150
IDDSupply current
V
O
= 2.5 V,
No load
Full range 200 200
µ
A
Full range for the TLV2221C is 0°C to 70°C. Full range for the TLV2221I is – 40°C to 85°C.
Referenced to 2.5 V
NOTE 5: T ypical values are based on the input offset voltage shift observed through 500 hours of operating life test at TA = 150°C extrapolated
to TA = 25°C using the Arrhenius equation and assuming an activation energy of 0.96 eV .
TLV2221, TLV2221Y
Advanced LinCMOS RAIL-TO-RAIL
VERY LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS157A – JUNE 1996 – REVISED JANUARY 1997
9
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
operating characteristics at specified free-air temperature, VDD = 5 V
TLV2221C TLV2221I
PARAMETER
TEST CONDITIONS
T
A
MIN TYP MAX MIN TYP MAX
UNIT
25°C
0.1 0.18 0.1 0.18
SR
Slew rate at unit
y
gain
V
O
= 1.5 V to 3.5 V,
CL = 100 pF
R
L
= 2
k
,
Full
range
0.05 0.05
V/µs
Equivalent input
f = 10 Hz 25°C 90 90
V
n
q
noise voltage
f = 1 kHz
25°C 19 19
n
V/H
z
Peak-to-peak
p
f = 0.1 Hz to 1 Hz 25°C 800 800
V
N(PP)
equivalent inpu
t
noise voltage
f = 0.1 Hz to 10 Hz
25°C 960 960
mV
I
n
Equivalent input noise current
25°C 0.6 0.6
fA/Hz
VO = 1.5 V to 3.5 V,
AV = 1
°
2.45% 2.45%
Total harmonic
f
= 20 kHz,
RL = 2 k
AV = 10
25°C
5.54% 5.54%
THD+N
distortion plus noise
VO = 1.5 V to 3.5 V,
AV = 1
°
0.142% 0.142%
f
= 20 kHz,
RL = 2 k
§
AV = 10
25°C
0.257% 0.257%
Gain-bandwidth product
f = 1 kHz, CL = 100 pF
RL = 2 k‡,
25°C 510 510 kHz
B
OM
Maximum output­swing bandwidth
V
O(PP)
= 1 V,
RL = 2 k‡,
AV = 1, CL = 100 pF
25°C 40 40 kHz
AV = –1, Step = 1.5 V to 3.5 V ,
To 0.1% 25°C 6.8 6.8
tsSettling time
,
RL = 2 k‡, CL = 100 pF
To 0.01% 25°C 9.2 9.2
µ
s
φ
m
Phase margin at unity gain
R
= 2 k‡, C
= 100 pF
25°C 52° 52°
Gain margin
L,L
25°C 12 12 dB
Full range is –40°C to 85°C.
Referenced to 2.5 V
§
Referenced to 0 V
TLV2221, TLV2221Y Advanced LinCMOS RAIL-TO-RAIL VERY LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS157A – JUNE 1996 – REVISED JANUARY 1997
10
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
electrical characteristics at VDD = 3 V, TA = 25°C (unless otherwise noted)
TLV2221Y
PARAMETER
TEST CONDITIONS
MIN TYP MAX
UNIT
V
IO
Input offset voltage
620 µV
I
IO
Input offset current
VDD± = ±1.5 V,
VIC = 0, VO = 0,
0.5 pA
I
IB
Input bias current
R
S
= 50
1 pA
–0.3
V
ICR
Common-mode input voltage range | VIO| ≤5 mV, RS = 50
to
V
ICR
gg
IO
S
2.2
V
OH
High-level output voltage IOH = –100 µA 2.97 V
p
VIC = 1.5 V, IOL = 50 µA 15
VOLLow-level output voltage
VIC = 1.5 V, IOL = 500 µA 150
mV
Large-signal differential
RL = 2 k
3
A
VD
gg
voltage amplification
V
O
= 1 V to 2
V
RL = 1 M
250
V/mV
r
id
Differential input resistance 10
12
r
ic
Common-mode input resistance 10
12
c
ic
Common-mode input capacitance f = 10 kHz 6 pF
z
o
Closed-loop output impedance f = 10 kHz, AV = 10 90 CMRR Common-mode rejection ratio VIC = 0 to 1.7 V, VO = 0, RS = 50 82 dB k
SVR
Supply voltage rejection ratio (VDD/VIO) VDD = 2.7 V to 8 V, VIC = 0, No load 95 dB I
DD
Supply current VO = 0, No load 100 µA
Referenced to 1.5 V
electrical characteristics at VDD = 5 V, TA = 25°C (unless otherwise noted)
TLV2221Y
PARAMETER
TEST CONDITIONS
MIN TYP MAX
UNIT
V
IO
Input offset voltage
610 µV
I
IO
Input offset current
VDD± = ±1.5 V,
VIC = 0, VO = 0,
0.5 pA
I
IB
Input bias current
R
S
= 50
1 pA
–0.3
V
ICR
Common-mode input voltage range | VIO| ≤5 mV, RS = 50
to
V
ICR
gg
IO
S
4.2
V
OH
High-level output voltage IOH = –500 µA 4.88 V
p
VIC = 2.5 V, IOL = 50 µA 12
VOLLow-level output voltage
VIC = 2.5 V, IOL = 500 µA 120
mV
Large-signal differential
RL = 2 k
5
A
VD
gg
voltage amplification
V
O
= 1 V to 4
V
RL = 1 M
800
V/mV
r
id
Differential input resistance 10
12
r
ic
Common-mode input resistance 10
12
c
ic
Common-mode input capacitance f = 10 kHz 6 pF z
o
Closed-loop output impedance f = 10 kHz, AV = 10 70 CMRR Common-mode rejection ratio VIC = 0 to 1.7 V, VO = 0, RS = 50 85 dB k
SVR
Supply voltage rejection ratio (VDD/VIO) VDD = 2.7 V to 8 V, VIC = 0, No load 95 dB I
DD
Supply current VO = 0, No load 110 µA
Referenced to 2.5 V
TLV2221, TLV2221Y
Advanced LinCMOS RAIL-TO-RAIL
VERY LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS157A – JUNE 1996 – REVISED JANUARY 1997
11
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Table of Graphs
FIGURE
p
Distribution 1, 2
VIOInput offset voltage
vs Common-mode input voltage
,
3, 4
α
VIO
Input offset voltage temperature coefficient Distribution 5, 6
IIB/I
IO
Input bias and input offset currents vs Free-air temperature 7
p
vs Supply voltage 8
VIInput voltage
yg
vs Free-air temperature 9
V
OH
High-level output voltage vs High-level output current 10, 13
V
OL
Low-level output voltage vs Low-level output current 11, 12, 14
V
O(PP)
Maximum peak-to-peak output voltage vs Frequency 15
p
vs Supply voltage 16
IOSShort-circuit output current
yg
vs Free-air temperature 17
V
O
Output voltage vs Differential input voltage 18, 19
A
VD
Differential voltage amplification vs Load resistance 20
p
vs Frequency 21, 22
AVDLarge signal differential voltage amplification
qy
vs Free-air temperature
,
23, 24
z
o
Output impedance vs Frequency 25, 26
vs Frequency 27
CMRR
Common-mode rejection ratio
qy
vs Free-air temperature 28
pp
vs Frequency 29, 30
k
SVR
Suppl
y-v
oltage rejection ratio
qy
vs Free-air temperature
,
31
I
DD
Supply current vs Supply voltage 32
vs Load capacitance 33
SR
Slew rate
vs Free-air temperature 34
V
O
Inverting large-signal pulse response vs Time 35, 36
V
O
Voltage-follower large-signal pulse response vs Time 37, 38
V
O
Inverting small-signal pulse response vs Time 39, 40
V
O
Voltage-follower small-signal pulse response vs Time 41, 42
V
n
Equivalent input noise voltage vs Frequency 43, 44 Input noise voltage (referred to input) Over a 10-second period 45
THD + N Total harmonic distortion plus noise vs Frequency 46
p
vs Free-air temperature 47
Gain-bandwidth product
vs Supply voltage 48 vs Frequency 21, 22
φmPhase margin
qy
vs Load capacitance
,
51, 52
Gain margin vs Load capacitance 49, 50
B
1
Unity-gain bandwidth vs Load capacitance 53, 54
TLV2221, TLV2221Y Advanced LinCMOS RAIL-TO-RAIL VERY LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS157A – JUNE 1996 – REVISED JANUARY 1997
12
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 1
Precentage of Amplifiers – %
DISTRIBUTION OF TLV2211
INPUT OFFSET VOLTAGE
VIO – Input Offset Voltage – mV
15
10
5
0
20
25
–1.5 –1 –0.5 0 0.5 1 1.5
385 Amplifiers From 1 Wafer Lot VDD = ±1.5 V TA = 25°C
Figure 2
Precentage of Amplifiers – %
DISTRIBUTION OF TLV2211
INPUT OFFSET VOLTAGE
VIO – Input Offset Voltage – mV
15
10
5
0
20
25
–1.5 –1 –0.5 0 0.5 1 1.5
VDD = ±2.5 V TA = 25°C
385 Amplifiers From 1 Wafer Lot
Figure 3
– Input Offset Voltage – mV
INPUT OFFSET VOLTAGE
vs
COMMON-MODE INPUT VOLTAGE
V
IO
VIC – Common-Mode Input Voltage – V
1
0.8
0.6
0.4
0.2
0 –0.2 –0.4
–0.6
–0.8
–1
–1 0 1 2
VDD = 3 V RS = 50 TA = 25°C
3
Figure 4
– Input Offset Voltage – mV
INPUT OFFSET VOLTAGE
vs
COMMON-MODE INPUT VOLTAGE
V
IO
VIC – Common-Mode Input Voltage – V
1
0.8
0.6
0.4
0.2
0 –0.2 –0.4
–0.6
–0.8
–1
–1 0 1 2
VDD = 5 V RS = 50 TA = 25°C
3
45
For all curves where VDD = 5 V, all loads are referenced to 2.5 V. For all curves where VDD = 3 V, all loads are referenced to 1.5 V.
TLV2221, TLV2221Y
Advanced LinCMOS RAIL-TO-RAIL
VERY LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS157A – JUNE 1996 – REVISED JANUARY 1997
13
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 5
DISTRIBUTION OF TLV2221 INPUT OFFSET
VOLTAGE TEMPERATURE COEFFICIENT
Percentage of Amplifiers – %
α
VIO
– Input Offset Voltage
Temperature Coefficient – µV/°C
15
10
5
0
20
25
–4 –3 –2 0 1 2 3
VDD = ±1.5 V P Package TA = 25°C to 125°C
–1 4
32 Amplifiers From 1 Wafer Lot
Figure 6
DISTRIBUTION OF TLV2221 INPUT OFFSET
VOLTAGE TEMPERATURE COEFFICIENT
Percentage of Amplifiers – %
α
VIO
– Input Offset Voltage
Temperature Coefficient – µV/°C
15
10
5
0
20
25
–4 –3 –2 0 1 2 3
VDD = ±2.5 V P Package TA = 25°C to 125°C
–1 4
32 Amplifiers From 1 Wafer Lot
Figure 7
IIB and IIO – Input Bias and Input Offset Currents – pA
INPUT BIAS AND INPUT OFFSET CURRENTS
vs
FREE-AIR TEMPERATURE
I
IB
I
IO
TA – Free-Air Temperature – °C
50
40
20 10
0
90
30
25 45 65 85
70
60
80
100
105 125
V
DD±
= ±2.5 V
VIC = 0 VO = 0 RS = 50
I
IB
I
IO
Figure 8
0
4
1 1.5 2 2.5
– Input Voltage – V
2
1
3
INPUT VOLTAGE
vs
SUPPLY VOLTAGE
5
3 3.5 4
–1 –2
–3 –4
–5
RS = 50 TA = 25°C
|VIO| 5 mV
V
I
|V
DD±
| – Supply Voltage – V
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
TLV2221, TLV2221Y Advanced LinCMOS RAIL-TO-RAIL VERY LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS157A – JUNE 1996 – REVISED JANUARY 1997
14
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 9
– Input Voltage – V
INPUT VOLTAGE
†‡
vs
FREE-AIR TEMPERATURE
V
I
TA – Free-Air Temperature – °C
2
1
0
3
4
5
–1
–55 –35 –15 5 25 45 65 85
|VIO| 5 mV
VDD = 5 V
105 125
Figure 10
– High-Level Output Voltage – V
HIGH-LEVEL OUTPUT VOLTAGE
†‡
vs
HIGH-LEVEL OUTPUT CURRENT
V
OH
|IOH| – High-Level Output Current – mA
1.5
1
0.5
0
0 0.5 1 1.5 2 2.5 3
2
2.5
3
3.5 4 4.5 5
VDD = 3 V
TA = –40°C
TA = 25°C
TA = 85°C
TA = 125°C
Figure 11
0.6
0.4
0.2
0
0123
– Low-Level Output Voltage – V
0.8
1
LOW-LEVEL OUTPUT VOLTAGE
vs
LOW-LEVEL OUTPUT CURRENT
1.2
45
V
OL
IOL – Low-Level Output Current – mA
VDD = 3 V TA = 25°C
VIC = 0
VIC = 0.75 V
VIC = 1.5 V
Figure 12
– Low-Level Output Voltage – V
LOW-LEVEL OUTPUT VOLTAGE
†‡
vs
LOW-LEVEL OUTPUT CURRENT
V
OL
IOL – Low-Level Output Current – mA
0.4
0.2
1.2
0
012 3
0.8
0.6
1
1.4
45
T
A
= 85°C
TA = – 40°C
TA = 25°C
TA = 125°C
VDD = 3 V VIC = 1.5 V
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
For all curves where VDD = 5 V, all loads are referenced to 2.5 V. For all curves where VDD = 3 V, all loads are referenced to 1.5 V.
TLV2221, TLV2221Y
Advanced LinCMOS RAIL-TO-RAIL
VERY LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS157A – JUNE 1996 – REVISED JANUARY 1997
15
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 13
– High-Level Output Voltage – V
HIGH-LEVEL OUTPUT VOLTAGE
†‡
vs
HIGH-LEVEL OUTPUT CURRENT
V
OH
|IOH| – High-Level Output Current – mA
2
1
0
0123 4
3
4
5
5678
VDD = 5 V VIC =
2.5 V
TA = –40°C
TA = 25°C
TA = 85°C
TA = 125°C
Figure 14
– Low-Level Output Voltage – V
LOW-LEVEL OUTPUT VOLTAGE
†‡
vs
LOW-LEVEL OUTPUT CURRENT
V
OL
IOL – Low-Level Output Current – mA
0.6
0.4
0.2
0
01 2 3
1
1.2
1.4
456
0.8
VDD = 5 V VIC = 2.5 V
TA = –40°C
TA = 85°C
TA = 25°C
TA = 125°C
Figure 15
– Maximum Peak-to-Peak Output Voltage – V
f – Frequency – Hz
MAXIMUM PEAK-TO-PEAK OUTPUT VOLTAGE
vs
FREQUENCY
V
O(PP)
4
2
1
5
3
0
10
2
10
3
10
4
10
5
RL = 2 k TA = 25°C
VDD = 5 V
VDD = 3 V
Figure 16
– Short-Circuit Output Current – mA
SHORT-CIRCUIT OUTPUT CURRENT
vs
SUPPLY VOLTAGE
I
OS
VDD – Supply Voltage – V
2
–8
–4
0
4
8
12
16
20
345678
V
O
= VDD/2 TA = 25°C VIC = VDD/2
VID = –100 mV
VID = 100 mV
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
For all curves where VDD = 5 V, all loads are referenced to 2.5 V. For all curves where VDD = 3 V, all loads are referenced to 1.5 V.
TLV2221, TLV2221Y Advanced LinCMOS RAIL-TO-RAIL VERY LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS157A – JUNE 1996 – REVISED JANUARY 1997
16
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 17
– Short-Circuit Output Current – mA
SHORT-CIRCUIT OUTPUT CURRENT
†‡
vs
FREE-AIR TEMPERATURE
I
OS
TA – Free-Air Temperature – °C
20
16
12
8
4
0
–4
–8
–75 –50 –25 0 25 50 75 100 125
VDD = 5 V VIC = 2.5 V VO = 2.5 V
VID = –100 mV
VID = 100 mV
Figure 18
543210–1–2–3–4–5
0
0.5
1
1.5
2
2.5
3
VDD = 3 V RI = 2 k VIC = 1.5 V TA = 25°C
OUTPUT VOLTAGE
vs
DIFFERENTIAL INPUT VOLTAGE
VID – Differential Input Voltage – V
– Output Voltage – V V
O
Figure 19
543210–1–2–3–4–5
0
1
2
3
4
5
VDD = 5 V VIC = 2.5 V RL = 2 k TA = 25°C
OUTPUT VOLTAGE
vs
DIFFERENTIAL INPUT VOLTAGE
VID – Differential Input Voltage – V
– Output Voltage – V V
O
Figure 20
DIFFERENTIAL VOLTAGE AMPLIFICATION
vs
LOAD RESISTANCE
RL – Load Resistance – k
– Differential Voltage Amplification – V/mV
A
VD
110
1102
10
3
10
2
10
1
1
10
3
VDD = 5 V
VDD = 3 V
V
O(PP)
= 2 V
TA = 25°C
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
For all curves where VDD = 5 V, all loads are referenced to 2.5 V. For all curves where VDD = 3 V, all loads are referenced to 1.5 V.
TLV2221, TLV2221Y
Advanced LinCMOS RAIL-TO-RAIL
VERY LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS157A – JUNE 1996 – REVISED JANUARY 1997
17
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
om – Phase Margin
φ
m
f – Frequency – Hz
LARGE-SIGNAL DIFFERENTIAL VOLTAGE
AMPLIFICATION AND PHASE MARGIN
vs
FREQUENCY
AVD – Large-Signal Differential
A
VD
Voltage Amplification – dB
10
4
Gain
Phase Margin
20
80
60
40
0
–20
–40
180°
135°
90°
45°
0°
–45°
–90°
10
5
10
6
10
7
VDD = 5 V RL = 2 k CL= 100 pF TA = 25°C
Figure 21
om – Phase Margin
φ
m
f – Frequency – Hz
LARGE-SIGNAL DIFFERENTIAL VOLTAGE
AMPLIFICATION AND PHASE MARGIN
vs
FREQUENCY
AVD – Large-Signal Differential
A
VD
Voltage Amplification – dB
Gain
Phase Margin
VDD = 3 V RL = 2 k CL= 100 pF TA = 25°C
10
4
20
80
60
40
0
–20
–40
180°
135°
90°
45°
0°
–45°
–90°
10
5
10
6
10
7
Figure 22
For all curves where VDD = 5 V, all loads are referenced to 2.5 V. For all curves where VDD = 3 V, all loads are referenced to 1.5 V.
TLV2221, TLV2221Y Advanced LinCMOS RAIL-TO-RAIL VERY LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS157A – JUNE 1996 – REVISED JANUARY 1997
18
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 23
LARGE-SIGNAL DIFFERENTIAL
VOLTAGE AMPLIFICATION
†‡
vs
FREE-AIR TEMPERATURE
TA – Free-Air Temperature – °C
– Large-Signal Differential Voltage A
VD
Amplification – V/mV
–50 –25 0 25 50 75 100
RL = 2 k
RL = 1 M
10
3
10
2
1
VDD = 3 V VIC = 1.5 V VO = 0.5 V to 2.5 V
–75 125
10
1
Figure 24
LARGE-SIGNAL DIFFERENTIAL
VOLTAGE AMPLIFICATION
†‡
vs
FREE-AIR TEMPERATURE
TA – Free-Air Temperature – °C
– Large-Signal Differential Voltage
A
VD
Amplification – V/mV
VDD = 5 V VIC = 2.5 V VO = 1 V to 4 V
RL = 2 k
RL = 1 M
–50 –25 0 25 50 75 100 125
10
4
10
3
10
2
1 –75
10
1
Figure 25
– Output Impedance –
f– Frequency – Hz
OUTPUT IMPEDANCE
vs
FREQUENCY
z
o
1
10
1
10
3
10
4
10
5
10
2
VDD = 3 V TA = 25°C
AV = 100
AV = 10
AV = 1
10
100
1000
Figure 26
– Output Impedance –
f– Frequency – Hz
OUTPUT IMPEDANCE
vs
FREQUENCY
z
o
VDD = 5 V TA = 25°C
AV = 100
AV = 10
AV = 1
10
1
0.1
1000
100
10
1
10
3
10
4
10
5
10
2
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
For all curves where VDD = 5 V, all loads are referenced to 2.5 V. For all curves where VDD = 3 V, all loads are referenced to 1.5 V.
TLV2221, TLV2221Y
Advanced LinCMOS RAIL-TO-RAIL
VERY LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS157A – JUNE 1996 – REVISED JANUARY 1997
19
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 27
CMRR – Common-Mode Rejection Ratio – dB
f – Frequency – Hz
COMMON-MODE REJECTION RATIO
vs
FREQUENCY
80
40
20
0
100
60
10
1
10
2
10
3
10
4
10
5
10
6
VDD = 5 V VIC = 2.5 V
TA = 25°C
VDD = 3 V VIC = 1.5 V
Figure 28
CMMR – Common-Mode Rejection Ratio – dB
COMMON-MODE REJECTION RATIO
†‡
vs
FREE-AIR TEMPERATURE
TA – Free-Air Temperature – °C
88
86
84
82
80
78
–75 – 50 –25 0 25 50 75 100 125
VDD = 5 V
VDD = 3 V
Figure 29
– Supply-Voltage Rejection Ratio – dB
f – Frequency – Hz
SUPPLY-VOLTAGE REJECTION RATIO
vs
FREQUENCY
k
SVR
60
40
20
100
80
0
–20
10
1
10
2
10
3
10
4
10
5
10
6
k
SVR+
k
SVR–
VDD = 3 V TA = 25°C
Figure 30
– Supply-Voltage Rejection Ratio – dB
f – Frequency – Hz
SUPPLY-VOLTAGE REJECTION RATIO
vs
FREQUENCY
k
SVR
VDD = 5 V TA = 25°C
k
SVR–
k
SVR+
100
80
60
40
20
0
–20
10
1
10
2
10
3
10
4
10
5
10
6
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
For all curves where VDD = 5 V, all loads are referenced to 2.5 V. For all curves where VDD = 3 V, all loads are referenced to 1.5 V.
TLV2221, TLV2221Y Advanced LinCMOS RAIL-TO-RAIL VERY LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS157A – JUNE 1996 – REVISED JANUARY 1997
20
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 31
– Supply-Voltage Rejection Ratio – dB
SUPPLY-VOLTAGE REJECTION RATIO
vs
FREE-AIR TEMPERATURE
Á
Á
k
SVR
TA – Free-Air Temperature – °C
–50 –25 0 25 50 75 100 125–75
VDD = 2.7 V to 8 V VIC = VO = VDD /2
100
98
96
94
92
90
Figure 32
– Supply Current –
Aµ
I
DD
VDD – Supply Voltage – V
SUPPLY CURRENT
vs
SUPPLY VOLTAGE
TA = 25°C
TA = 85°C
TA = –40°C
VO = 0 No Load
200
175
150
125
100
75
50
25
0
0246810
Figure 33
SR – Slew Rate –
SLEW RATE
vs
LOAD CAPACITANCE
CL – Load Capacitance – pF
sµ
V/
0.5
10
1
0.4
0.3
0.2
0.1
0
10
2
10
3
10
4
10
5
VDD = 5 V AV = –1 TA = 25°C
SR–
SR+
Figure 34
SR – Slew Rate –
SLEW RATE
†‡
vs
FREE-AIR TEMPERATURE
sµ V/
TA – Free-Air Temperature – °C
0.2
0.1
0
0.3
0.4
0.5
–50 –25 0 25 50 75 100
VDD = 5 V RL = 2 k CL = 100 pF AV = 1
–75 125
SR–
SR+
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
For all curves where VDD = 5 V, all loads are referenced to 2.5 V. For all curves where VDD = 3 V, all loads are referenced to 1.5 V.
TLV2221, TLV2221Y
Advanced LinCMOS RAIL-TO-RAIL
VERY LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS157A – JUNE 1996 – REVISED JANUARY 1997
21
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 35
– Output Voltage – V
INVERTING LARGE-SIGNAL PULSE
RESPONSE
V
O
t – Time – µs
AV = –1 TA = 25°C
VDD = 3 V RL = 2 k CL = 100 pF
1.5
1
0.5
0
2
2.5
3
0 5 10 15 20 25 30 35 40 45 50
Figure 36
INVERTING LARGE-SIGNAL PULSE
RESPONSE
t – Time – µs
– Output Voltage – V
V
O
2
1
0
0 5 10 15 20 25 30
3
4
5
35 40 45 50
VDD = 5 V RL = 2 k CL = 100 pF AV = –1 TA = 25°C
Figure 37
VOLTAGE-FOLLOWER LARGE-SIGNAL
PULSE RESPONSE
– Output Voltage – V
V
O
t – Time – µs
1
0
0 5 10 15 20 25 30
2
3
35 40 45 50
AV = 1 TA = 25°C
VDD = 5 V RL = 2 k CL = 100 pF
4
5
Figure 38
VOLTAGE-FOLLOWER LARGE-SIGNAL
PULSE RESPONSE
– Output Voltage – V
V
O
t – Time – µs
2
1
0
0 5 10 15 20 25 30
3
4
5
35 40 45 50
VDD = 5 V CL = 100 pF AV = 1 TA = 25°C
RL = 100 k
Tied to 2.5 V
RL = 2 k
Tied to 2.5 V
RL = 2 k
Tied to 0 V
For all curves where VDD = 5 V, all loads are referenced to 2.5 V. For all curves where VDD = 3 V, all loads are referenced to 1.5 V.
TLV2221, TLV2221Y Advanced LinCMOS RAIL-TO-RAIL VERY LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS157A – JUNE 1996 – REVISED JANUARY 1997
22
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 39
INVERTING SMALL-SIGNAL
PULSE RESPONSE
– Output Voltage – V
V
O
t – Time – µs
0.82
0
0.8
0.78
0.76
0.74
0.72
0.7
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
VDD = 3 V RL = 2 k CL = 100 pF AV = –1 TA = 25°C
Figure 40
VO – Output Voltage – V
INVERTING SMALL-SIGNAL
PULSE RESPONSE
V
O
t – Time – µs
VDD = 5 V RL = 2 k CL = 100 pF AV = –1 TA = 25°C
2.58
0
2.56
2.54
2.52
2.5
2.48
2.46
2.44
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
Figure 41
VOLTAGE-FOLLOWER SMALL-SIGNAL
PULSE RESPONSE
VO – Output Voltage – V
V
O
t – Time – µs
0.82
0
0.8
0.78
0.76
0.74
0.72
0.7 12345678910
VDD = 3 V RL = 2 k CL = 100 pF AV = 1 TA = 25°C
Figure 42
VOLTAGE-FOLLOWER SMALL-SIGNAL
PULSE RESPONSE
VO – Output Voltage – V
V
O
t – Time – µs
2.58
0
2.56
2.54
2.52
2.5
2.48
2.46
2.44
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
VDD = 5 V RL = 2 k CL = 100 pF AV = 1 TA = 25°C
For all curves where VDD = 5 V, all loads are referenced to 2.5 V. For all curves where VDD = 3 V, all loads are referenced to 1.5 V.
TLV2221, TLV2221Y
Advanced LinCMOS RAIL-TO-RAIL
VERY LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS157A – JUNE 1996 – REVISED JANUARY 1997
23
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 43
– Equivalent Input Noise Voltage –
f – Frequency – Hz
EQUIVALENT INPUT NOISE VOLTAGE
vs
FREQUENCY
V
n
nV/
Hz
10
1
10
2
10
3
10
4
120
VDD = 3 V RS = 20 TA = 25°C
100
80
60
40
20
0
Figure 44
– Equivalent Input Noise Voltage –
f – Frequency – Hz
EQUIVALENT INPUT NOISE VOLTAGE
vs
FREQUENCY
V
n
nV/ Hz
VDD = 5 V RS = 20 TA = 25°C
10
1
10
2
10
3
10
4
120
100
80
60
40
20
0
Figure 45
Input Noise Voltage – nV
t – Time – s
INPUT NOISE VOLTAGE OVER
A 10-SECOND PERIOD
0246
750
1000
810
500
–250
–500
–750
–1000
250
VDD = 5 V f = 0.1 Hz to 10 Hz TA = 25°C
0
Figure 46
THD + N – Total Harmonic Distortion Plus Noise – %
f – Frequency – Hz
TOTAL HARMONIC DISTORTION PLUS NOISE
vs
FREQUENCY
10
1
10
2
10
3
10
4
10
5
0.1
10
0.01
1
AV = 1
AV = 10
AV = 1
AV = 10
VDD = 5 V TA = 25°C
RL = 2 kTied to 2.5 V RL = 2 kTied to 0 V
For all curves where VDD = 5 V, all loads are referenced to 2.5 V. For all curves where VDD = 3 V, all loads are referenced to 1.5 V.
TLV2221, TLV2221Y Advanced LinCMOS RAIL-TO-RAIL VERY LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS157A – JUNE 1996 – REVISED JANUARY 1997
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TYPICAL CHARACTERISTICS
Figure 47
Gain-Bandwidth Product – kHz
GAIN-BANDWIDTH PRODUCT
†‡
vs
FREE-AIR TEMPERATURE
TA – Free-Air Temperature – °C
500
400
300
200
600
700
800
–50 – 25 0 25 50 10075
VDD = 5 V f = 10 kHz RL = 2 kHz CL = 100 pF
125–75
Figure 48
Gain-Bandwidth Product – kHz
GAIN-BANDWIDTH PRODUCT
vs
SUPPLY VOLTAGE
VDD – Supply Voltage – V
500
450
425
400
550
575
600
525
475
0235 78146
R
L
= 2k CL = 100 pF TA = 25°C
Figure 49
Gain Margin – dB
GAIN MARGIN
vs
LOAD CAPACITANCE
CL – Load Capacitance – pF
R
null
= 500
R
null
= 200
R
null
= 0
20
10
5
0
15
10
1
10
2
10
3
10
5
10
4
R
null
= 1 k
TA = 25°C RL =
Figure 50
CL – Load Capacitance – pF
10
1
10
2
10
3
10
5
10
4
R
null
= 1 k
R
null
= 500
R
null
= 100
R
null
= 0
TA = 25°C RL = 2 k
20
15
10
5
0
Gain Margin – dB
GAIN MARGIN
vs
LOAD CAPACITANCE
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
For all curves where VDD = 5 V, all loads are referenced to 2.5 V. For all curves where VDD = 3 V, all loads are referenced to 1.5 V.
TLV2221, TLV2221Y
Advanced LinCMOS RAIL-TO-RAIL
VERY LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS157A – JUNE 1996 – REVISED JANUARY 1997
25
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 51
om – Phase Margin
PHASE MARGIN
vs
LOAD CAPACITANCE
CL – Load Capacitance – pF
m
φ
10
1
10
2
10
3
10
5
75°
60°
45°
30°
15°
0°
R
null
= 200
R
null
= 500
R
null
= 0
R
null
= 1 k
10
4
TA = 25°C RL =
Figure 52
CL – Load Capacitance – pF
10
1
10
2
10
3
10
5
75°
60°
45°
30°
15°
0°
10
4
R
null
= 1 k
R
null
= 500
R
null
= 100
R
null
= 0
TA = 25°C RL = 2 k
om – Phase Margin
PHASE MARGIN
vs
LOAD CAPACITANCE
m
φ
Figure 53
– Unity-Gain Bandwidth – kHz
UNITY-GAIN BANDWIDTH
vs
LOAD CAPACITANCE
CL – Load Capacitance – pF
B
1
600
10
1
10
2
10
3
10
4
10
5
500
400
300
200
100
0
TA = 25°C RL =
Figure 54
CL – Load Capacitance – pF
10
1
10
2
10
3
10
5
10
4
TA = 25°C RL = 2 k
600
500
400
300
200
100
0
– Unity-Gain Bandwidth – kHz
UNITY-GAIN BANDWIDTH
vs
LOAD CAPACITANCE
B
1
TLV2221, TLV2221Y Advanced LinCMOS RAIL-TO-RAIL VERY LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
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POST OFFICE BOX 655303 DALLAS, TEXAS 75265
APPLICATION INFORMATION
driving large capacitive loads
The TLV2221 is designed to drive larger capacitive loads than most CMOS operational amplifiers. Figure 49 through Figure 54 illustrate its ability to drive loads greater than 100 pF while maintaining good gain and phase margins (R
null
= 0).
A small series resistor (R
null
) at the output of the device (Figure 55) improves the gain and phase margins when driving large capacitive loads. Figure 49 through Figure 52 show the effects of adding series resistances of 100 Ω, 200 , 500 , and 1 k. The addition of this series resistor has two effects: the first effect is that it adds a zero to the transfer function and the second effect is that it reduces the frequency of the pole associated with the output load in the transfer function.
The zero introduced to the transfer function is equal to the series resistance times the load capacitance. To calculate the approximate improvement in phase margin, equation (1) can be used.
∆φ
m1
+
tan
–1
ǒ
2 × π × UGBW × R
null
× C
L
Ǔ
∆φm1+
improvement in phase margin
UGBW+unity-gain bandwidth frequency
R
null
+
output series resistance
C
L
+
load capacitance
(1)
where :
The unity-gain bandwidth (UGBW) frequency decreases as the capacitive load increases (Figure 53 and Figure
54). To use equation (1), UGBW must be approximated from Figure 53 and Figure 54.
V
DD–
/GND
V
DD+
R
null
C
L
V
I
+
R
L
Figure 55. Series-Resistance Circuit
The TL V2221 is designed to provide better sinking and sourcing output currents than earlier CMOS rail-to-rail output devices. This device is specified to sink 500 µA and source 1 mA at V
DD
= 5 V at a maximum quiescent
I
DD
of 200 µA. This provides a greater than 80% power efficiency.
When driving heavy dc loads, such as 2 k, the positive edge under slewing conditions can experience some distortion. This condition can be seen in Figure 37. This condition is affected by three factors:
D
Where the load is referenced. When the load is referenced to either rail, this condition does not occur. The distortion occurs only when the output signal swings through the point where the load is referenced. Figure 38 illustrates two 2-k load conditions. The first load condition shows the distortion seen for a 2-k load tied to 2.5 V. The third load condition in Figure 38 shows no distortion for a 2-k load tied to 0 V.
D
Load resistance. As the load resistance increases, the distortion seen on the output decreases. Figure 38 illustrates the difference seen on the output for a 2-k load and a 100-k load with both tied to 2.5 V.
D
Input signal edge rate. Faster input edge rates for a step input result in more distortion than with slower input edge rates.
TLV2221, TLV2221Y
Advanced LinCMOS RAIL-TO-RAIL
VERY LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
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APPLICATION INFORMATION
macromodel information
Macromodel information provided was derived using Microsim
Parts
, the model generation software used
with Microsim
PSpice
. The Boyle macromodel (see Note 6) and subcircuit in Figure 56 are generated using
the TLV2221 typical electrical and operating characteristics at T
A
= 25°C. Using this information, output
simulations of the following key parameters can be generated to a tolerance of 20% (in most cases):
D
Maximum positive output voltage swing
D
Maximum negative output voltage swing
D
Slew rate
D
Quiescent power dissipation
D
Input bias current
D
Open-loop voltage amplification
D
Unity-gain frequency
D
Common-mode rejection ratio
D
Phase margin
D
DC output resistance
D
AC output resistance
D
Short-circuit output current limit
NOTE 6: G. R. Boyle, B. M. Cohn, D. O. Pederson, and J. E. Solomon, “Macromodeling of Integrated Circuit Operational Amplifiers”,
IEEE Journal
of Solid-State Circuits,
SC-9, 353 (1974).
OUT
+
+
+
+
+ –
+
+
+
+
.SUBCKT TLV2221 1 2 3 4 5
C1 11 12 12.53E–12 C2 6 7 50.00E–12 DC 5 53 DX DE 54 5 DX DLP 90 91 DX DLN 92 90 DX DP 43DX EGND 99 0 POL Y (2) (3,0) (4,0) 0 .5 .5 FB 7 99 POLY (5) VB VC VE VLP + VLN 0 893.6E3 –90E3 90E3 90E3 –90E3 GA 6 0 11 12 94.25E–6 GCM 0 6 10 99 9.300E–9 ISS 3 10 DC 9.000E–6 HLIM 90 0 VLIM 1K J1 11 2 10 JX J2 12 1 10 JX R2 6 9 100.0E3
RD1 60 11 10.61E3 RD2 60 12 10.61E3 R01 8 5 35 R02 7 99 35 RP 3 4 49.50E3 RSS 10 99 22.22E6 VAD 60 4 –.5 VB 9 0 DC 0 VC 3 53 DC .666 VE 54 4 DC .666 VLIM 7 8 DC 0 VLP 91 0 DC 3.4 VLN 0 92 DC 11.4 .MODEL DX D (IS=800.0E–18) .MODEL JX PJF (IS=500.0E–15 BETA=1.527E–3 + VTO=–.001) .ENDS
V
DD+
RP
IN –
2
IN+
1
V
DD–
VAD
RD1
11
J1 J2
10
RSS ISS
3
12
RD2
60
VE
54
DE
DP
VC
DC
4
C1
53
R2
6
9
EGND
VB
FB
C2
GCM
GA
VLIM
8
5
RO1
RO2
HLIM
90
DLP
91
DLN
92
VLNVLP
99
7
Figure 56. Boyle Macromodel and Subcircuit
PSpice
and
Parts
are trademark of MicroSim Corporation.
TLV2221, TLV2221Y Advanced LinCMOS RAIL-TO-RAIL VERY LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
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28
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MECHANICAL INFORMATION
DBV (R-PDSO-G5) PLASTIC SMALL-OUTLINE PACKAGE
0,25
Gage Plane
0,15 NOM
4073253-3/A 09/95
3,00
0,20
0,40
1,80 1,50
2,50
45
3
3,10
1
2,70
1,00
1,30
0,05 MIN
Seating Plane
0,10
0,95
M
0,25
0°–8°
2
NOTES: A. All linear dimensions are in millimeters.
B. This drawing is subject to change without notice.
C. Body dimensions include mold flash or protrusion.
IMPORTANT NOTICE
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Copyright 1998, Texas Instruments Incorporated
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