Texas Instruments TLV2211IDBVR, TLV2211IDBVT, TLV2211CDBVT, TLV2211CDBVR Datasheet

TLV2211, TLV2211Y
Advanced LinCMOS RAIL-TO-RAIL
MICROPOWER SINGLE OPERATIONAL AMPLIFIERS
SLOS156B – MAY 1996 – REVISED JANUAR Y 1997
1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
D
D
Low Noise...21 nV/√Hz Typ at f = 1 kHz
D
Low Input Bias Current...1 pA Typ
D
Very Low Power...13 µA Per Channel Typ
D
Common-Mode Input Voltage Range Includes Negative Rail
D
Wide Supply Voltage Range
2.7 V to 10 V
D
Available in the SOT-23 Package
D
Macromodel Included
description
The TL V2211 is a single operational amplifier manufactured using the T exas Instruments Advanced LinCMOS process. These devices are optimized and fully specified for single-supply 3-V and 5-V operation. For this low-voltage operation combined with micropower dissipation levels, the input noise voltage performance has been dramatically improved using optimized design techniques for CMOS-type amplifiers. Another added benefit is that these amplifiers exhibit rail-to-rail output swing. The output dynamic range can be extended using the TL V221 1 with loads referenced midway between the rails. The common-mode input voltage range is wider than typical standard CMOS-type amplifiers. To take advantage of this improvement in performance and to make this device available for a wider range of applications, V
ICR
is specified with a larger maximum input offset voltage test limit of ± 5 mV , allowing a minimum of 0 to 2-V common-mode input voltage range for a 3-V power supply .
AVAILABLE OPTIONS
°
PACKAGED DEVICES
CHIP FORM
T
A
VIOmax AT 25°C
SOT-23 (DBV)
SYMBOL
(Y)
0°C to 70°C 3 mV TLV2211CDBV VACC
–40°C to 85°C 3 mV TLV2211IDBV VACI
TLV2211Y
The DBV package available in tape and reel only.
The Advanced LinCMOS process uses a silicon-gate technology to obtain input offset voltage stability with temperature and time that far exceeds that obtainable using metal-gate technology . This technology also makes possible input-impedance levels that meet or exceed levels offered by top-gate JFET and expensive dielectric-isolated devices.
The TLV2211, exhibiting high input impedance and low noise, is excellent for small-signal conditioning for high-impedance sources such as piezoelectric transducers. Because of the low power dissipation levels combined with 3-V operation, these devices work well in hand-held monitoring and remote-sensing applications. In addition, the rail-to-rail output feature with single or split supplies makes these devices excellent choices when interfacing directly to analog-to-digital converters (ADCs). All of these features combined with its temperature performance make the TLV2211 ideal for remote pressure sensors, temperature control, active voltage-resistive (VR) sensors, accelerometers, hand-held metering, and many other applications.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
DBV PACKAGE
(TOP VIEW)
5
43
1
2
IN–
V
DD–
/GND
IN+ V
DD+
OUT
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
Copyright 1997, Texas Instruments Incorporated
Advanced LinCMOS is a trademark of Texas Instruments Incorporated.
TLV2211, TLV2211Y Advanced LinCMOS RAIL-TO-RAIL MICROPOWER SINGLE OPERATIONAL AMPLIFIERS
SLOS156B – MAY 1996 – REVISED JANUAR Y 1997
2
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
description (continued)
The device inputs and outputs are designed to withstand a 100-mA surge current without sustaining latch-up. In addition, internal ESD-protection circuits prevent functional failures up to 2000 V as tested under MIL-PRF-38535; however, care should be exercised when handling these devices as exposure to ESD may result in degradation of the device parametric performance. Additional care should be exercised to prevent V
DD +
supply-line transients under powered conditions. Transients of greater than 20 V can trigger the
ESD-protection structure, inducing a low-impedance path to V
DD –
/GND. Should this condition occur, the sustained current supplied to the device must be limited to 100 mA or less. Failure to do so could result in a latched condition and device failure.
TLV2211, TLV2211Y
Advanced LinCMOS RAIL-TO-RAIL
MICROPOWER SINGLE OPERATIONAL AMPLIFIERS
SLOS156B – MAY 1996 – REVISED JANUAR Y 1997
3
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
TLV2211Y chip information
This chip, when properly assembled, displays characteristics similar to the TLV2211C. Thermal compression or ultrasonic bonding may be used on the doped-aluminum bonding pads. This chip may be mounted with conductive epoxy or a gold-silicon preform.
BONDING PAD ASSIGNMENTS
CHIP THICKNESS: 10 MILS TYPICAL BONDING PADS: 4 × 4 MILS MINIMUM TJmax = 150°C TOLERANCES ARE ±10%. ALL DIMENSIONS ARE IN MILS. PIN (2) IS INTERNALLY CONNECTED
TO BACKSIDE OF CHIP.
+
OUT
IN+
IN–
V
DD+
(5)
(1)
(3)
(4)
(2)
V
DD–
/GND
40
(3)
(2)
(1)
(5)
(4)
32
TLV2211, TLV2211Y
MICROPOWER SINGLE OPERATIONAL AMPLIFIERS
SLOS156B – MAY 1996 – REVISED JANUAR Y 1997
Template Release Date: 7–11–94
Advanced LinCMOSRAIL-TO-RAIL
4
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
equivalent schematic
Q3 Q6 Q9 Q12 Q14 Q16
Q2 Q5 Q7 Q8 Q10 Q11
D1
Q17Q15Q13
Q4Q1
R5
C1
V
DD+
IN+
IN–
R3
R7
R1
R2
OUT
V
DD–/ GND
COMPONENT COUNT
Transistors Diodes Resistors Capacitors
23 6 11 2
Includes both amplifiers and all ESD, bias, and trim circuitry
R6
C2
D2
R4
TLV2211, TLV2211Y
Advanced LinCMOS RAIL-TO-RAIL
MICROPOWER SINGLE OPERATIONAL AMPLIFIERS
SLOS156B – MAY 1996 – REVISED JANUAR Y 1997
5
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Supply voltage, V
DD
(see Note 1) 12 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Differential input voltage, V
ID
(see Note 2) ±V
DD
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input voltage range, V
I
(any input, see Note 1) –0.3 V to V
DD
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input current, I
I
(each input) ±5 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output current, I
O
±50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total current into V
DD+
±50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total current out of V
DD–
±50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Duration of short-circuit current (at or below) 25°C (see Note 3) unlimited. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous total power dissipation See Dissipation Rating Table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating free-air temperature range, T
A
: TLV2211C 0°C to 70°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TLV2211I –40°C to 85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range, T
stg
–65°C to 150° C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds: DBV package 260°C. . . . . . . . . . . . . . . . . .
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. All voltage values, except differential voltages, are with respect to V
DD –
.
2. Differential voltages are at the noninverting input with respect to the inverting input. Excessive current flows when input is brought below V
DD–
– 0.3 V.
3. The output may be shorted to either supply. Temperature and /or supply voltages must be limited to ensure that the maximum dissipation rating is not exceeded.
DISSIPATION RATING TABLE
T
25°C DERATING FACTOR T
= 70°C T
= 85°C
PACKAGE
A
POWER RATING ABOVE TA = 25°CAPOWER RATINGAPOWER RATING
DBV 150 mW 1.2 mW/°C 96 mW 78 mW
recommended operating conditions
TLV2211C TLV2211I
MIN MAX MIN MAX
UNIT
Supply voltage, VDD(see Note 1)
2.7 10 2.7 10 V
Input voltage range, V
I
V
DD–VDD+
–1.3 V
DD–VDD+
–1.3 V
Common-mode input voltage, V
IC
V
DD–VDD+
–1.3 V
DD–VDD+
–1.3 V
Operating free-air temperature, T
A
0 70 –40 85 °C
NOTE 1: All voltage values, except differential voltages, are with respect to V
DD –
.
TLV2211, TLV2211Y Advanced LinCMOS RAIL-TO-RAIL MICROPOWER SINGLE OPERATIONAL AMPLIFIERS
SLOS156B – MAY 1996 – REVISED JANUAR Y 1997
6
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
electrical characteristics at specified free-air temperature, VDD = 3 V (unless otherwise noted)
TLV2211C TLV2211I
PARAMETER
TEST CONDITIONS
T
A
MIN TYP MAX MIN TYP MAX
UNIT
V
IO
Input offset voltage
0.47 3 0.47 3000 mV
Temperature
p
Full range
°
α
VIO
coe
fficient of i
npu
t
offset voltage
1
1µV/°C
Input offset voltage long-term drift (see Note 4)
V
DD±
= ±1.5 V,
VO = 0,
V
IC
= 0,
RS = 50
25°C 0.003 0.003 µV/mo
I
IO
Input offset current Full range 0.5 150 0.5 150 pA
I
IB
Input bias current Full range 1 150 1 150 pA
0 –0.3 0 –0.3
25°C
0to0.3to0to0.3
to
Common-mode input
2 2.2 2 2.2
V
ICR
voltage range
|V
IO
| ≤5 mV,
R
S
= 50
0 0
V
Full range
0to0
to
g
1.7 1.7
IOH = –100 µA 25°C 2.94 2.94
V
OH
High-level output
25°C 2.85 2.85
V
voltage
I
OH
= –
250 µA
Full range 2.5 2.5
VIC = 1.5 V, IOL = 50 µA 25°C 15 15
V
OL
Low-level output
25°C 150 150
mV
voltage
V
IC
= 1.5 V,
I
OL
=
500 µA
Full range 500 500
-
25°C 3 7 3 7
A
VD
Large signal
differential voltage
VIC = 1.5 V,
R
L
= 10
k
Full range 1 1
V/mV
VD
amplification
V
O
= 1 V to 2
V
RL = 1 M
25°C 600 600
r
i(d)
Differential input resistance
25°C 10
12
10
12
r
i(c)
Common-mode input resistance
25°C 10
12
10
12
c
i(c)
Common-mode input capacitance
f = 10 kHz, 25°C 5 5 pF
z
o
Closed-loop output impedance
f = 7 kHz, AV = 1 25°C 200 200
Common-mode V
= 0 to 1.7 V,
V
= 1.5 V,
25°C 65 83 65 83
CMRR
rejection ratio
IC
,
RS = 50
O
,
Full range 60 60
dB
Supply voltage
V
= 2.7 V to 8 V, V
= V
/2
25°C 80 95 80 95
k
SVR
rejection ratio (VDD /VIO)
DD
,
No load
IC DD
,
Full range
80 80
dB
pp
25°C 11 25 11 25
IDDSupply current
V
O
= 1.5 V,
No load
Full range 30 30
µ
A
Full range for the TLV2211C is 0°C to 70°C. Full range for the TLV221 1I is – 40 °C to 85°C.
Referenced to 1.5 V
NOTE 4: T ypical values are based on the input offset voltage shift observed through 500 hours of operating life test at TA = 150°C extrapolated
to TA = 25°C using the Arrhenius equation and assuming an activation energy of 0.96 eV .
TLV2211, TLV2211Y
Advanced LinCMOS RAIL-TO-RAIL
MICROPOWER SINGLE OPERATIONAL AMPLIFIERS
SLOS156B – MAY 1996 – REVISED JANUAR Y 1997
7
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
operating characteristics at specified free-air temperature, VDD = 3 V (unless otherwise noted)
TLV2211C TLV2211I
PARAMETER
TEST CONDITIONS
T
A
MIN TYP MAX MIN TYP MAX
UNIT
25°C
0.01
0.025
0.01
0.025
SR Slew rate at unity gain
V
O
=
1.1 V to 1.9 V
,
=
p
R
L
=
10 k
,
Full
V/µs
C
L
=
100 F
range
0.005
0.005
Equivalent input noise
f = 10 Hz 25°C 80 80
V
n
q
voltage
f = 1 kHz
25°C 22 22
n
V/H
z
Peak-to-peak equivalent
f = 0.1 Hz to 1 Hz 25°C 660 660
V
N(PP)
q
input noise voltage
f = 0.1 Hz to 10 Hz
25°C 880 880
µ
V
I
n
Equivalent input noise current
25°C 0.6 0.6
fA/Hz
p
f = 10 kHz, R
= 10 k
,
°
Gain-bandwidth product
f 10 kHz,
CL = 100 pF
R
L
10
k,
25°C5656
kH
z
Maximum output-swing V
= 1 V, A
= 1,
°
B
OM
g
bandwidth
O(PP)
,
RL = 10 k‡,
V
,
CL = 100 pF
25°C77
kH
z
φ
m
Phase margin at unity gain
R
= 10 k‡, C
= 100 pF
25°C 56° 56°
Gain margin
L,L
25°C 20 20 dB
Full range is –40°C to 85°C.
Referenced to 1.5 V
TLV2211, TLV2211Y Advanced LinCMOS RAIL-TO-RAIL MICROPOWER SINGLE OPERATIONAL AMPLIFIERS
SLOS156B – MAY 1996 – REVISED JANUAR Y 1997
8
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
electrical characteristics at specified free-air temperature, VDD = 5 V (unless otherwise noted)
TLV2211C TLV2211I
PARAMETER
TEST CONDITIONS
T
A
MIN TYP MAX MIN TYP MAX
UNIT
V
IO
Input offset voltage
0.45 3 0.45 3 mV
Temperature
p
Full range
°
α
VIO
coefficient of in ut
offset voltage
0.5
0.5µV/°C
Input offset voltage long-term drift (see Note 4)
V
DD±
= ±2.5 V,
VO = 0,
V
IC
= 0,
RS = 50
25°C
0.003 0.003 µV/mo
p
25°C 0.5 0.5
p
IIOInput offset current
Full range 150 150
pA
p
25°C 1 1
p
IIBInput bias current
Full range 150 150
pA
0 –0.3 0 –0.3
25°C
to to to to
Common-mode input
4 4.2 4 4.2
V
ICR
voltage range
|V
IO
| ≤5
mV
R
S
= 50
0 0
V
Full range
to to
g
3.5 3.5
IOH = –100 µA 25°C 4.95 4.95
V
OH
High-l
evel outpu
t
25°C 4.875 4.875
V
voltage
I
OH
= –
250 µA
Full range 4.5 4.5
VIC = 2.5 V, IOL = 50 µA 25°C 12 12
V
OL
L
ow-level outpu
t
25°C 120 120
mV
voltage
V
IC
=
2.5 V
,
I
OL
=
500 µA
Full range 500 500
-
25°C 6 12 6 12
A
VD
Large signal
differential
VIC = 2.5 V,
R
L
= 10
k
Full range 3 3
V/mV
voltage amplification
V
O
= 1 V to 4
V
RL = 1 M
25°C 800 800
r
i(d)
Differential input resistance
25°C 10
12
10
12
r
i(c)
Common-mode input resistance
25°C 10
12
10
12
c
i(c)
Common-mode input capacitance
f = 10 kHz, 25°C 5 5 pF
z
o
Closed-loop output impedance
f = 7 kHz, AV = 1 25°C 200 200
Common-mode VIC = 0 to 2.7 V,
V
O
= 2.5 V,
25°C 70 83 70 83
CMRR
rejection ratio
IC
RS = 50
O
Full range 70 70
dB
Supply voltage
VDD = 4.4 V to 8 V, VIC = VDD/2,
25°C 80 95 80 95
k
SVR
rejection ratio
(VDD /VIO)
DD
No load
IC DD
Full range 80 80
dB
pp
25°C 13 25 13 25
IDDSupply current
V
O
= 2.5 V,
No load
Full range 30 30
µ
A
Full range for the TLV2211C is 0°C to 70°C. Full range for the TLV221 1I is – 40 °C to 85°C.
Referenced to 1.5 V
NOTE 5: T ypical values are based on the input offset voltage shift observed through 500 hours of operating life test at TA = 150°C extrapolated
to TA = 25°C using the Arrhenius equation and assuming an activation energy of 0.96 eV .
TLV2211, TLV2211Y
Advanced LinCMOS RAIL-TO-RAIL
MICROPOWER SINGLE OPERATIONAL AMPLIFIERS
SLOS156B – MAY 1996 – REVISED JANUAR Y 1997
9
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
operating characteristics at specified free-air temperature, VDD = 5 V (unless otherwise noted)
TLV2211C TLV2211I
PARAMETER
TEST CONDITIONS
T
A
MIN TYP MAX MIN TYP MAX
UNIT
25°C
0.01
0.025
0.01
0.025
SR Slew rate at unity gain
V
O
=
1.5 V to 3.5 V
,
=
p
R
L
=
10 k
,
Full
V/µs
C
L
=
100 F
range
0.005
0.005
Equivalent input noise
f = 10 Hz 25°C 72 72
V
n
q
voltage
f = 1 kHz
25°C 21 21
n
V/H
z
Peak-to-peak equivalent
f = 0.1 Hz to 1 Hz 25°C 600 600
V
N(PP)
q
input noise voltage
f = 0.1 Hz to 10 Hz
25°C 800 800
µ
V
I
n
Equivalent input noise current
25°C 0.6 0.6
fA/Hz
p
f = 10 kHz, R
= 10 k
,
°
Gain-bandwidth product
f 10 kHz,
CL = 100 pF
R
L
10
k,
25°C6565
kH
z
Maximum output-swing V
= 2 V, A
= 1,
°
B
OM
g
bandwidth
O(PP)
,
RL = 10 k‡,
V
,
CL = 100 pF
25°C77
kH
z
φ
m
Phase margin at unity gain
R
= 10 k‡, C
= 100 pF
25°C 56° 56°
Gain margin
L,L
25°C 22 22 dB
Full range is –40°C to 85°C.
Referenced to 1.5 V
electrical characteristics at VDD = 3 V, TA = 25°C (unless otherwise noted)
TLV2211Y
PARAMETER
TEST CONDITIONS
MIN TYP MAX
UNIT
V
IO
Input offset voltage
0.47 mV
I
IO
Input offset current
V
DD±
= ±1.5 V ,
VO = 0, VIC = 0,
0.5 pA
I
IB
Input bias current
R
S
= 50
1 pA
–0.3
V
ICR
Common-mode input voltage range | VIO | ≤5 mV , RS = 50
to
V
ICR
gg
IO
S
2.2
p
IOH = –100 µA 2.94
VOHHigh-level output voltage
IOH = –200 µA 2.85
V
p
VIC = 0, IOL = 50 µA 15
VOLLow-level output voltage
VIC = 0, IOL = 500 µA 150
mV
Large-signal differential
RL = 10 k
7
A
VD
gg
voltage amplification
V
IC
= 1.5 V,
V
O
= 1 V to 2
V
RL = 1 M
600
V/mV
r
i(d)
Differential input resistance 10
12
r
i(c)
Common-mode input resistance 10
12
c
i(c)
Common-mode input capacitance f = 10 kHz 5 pF
z
o
Closed-loop output impedance f = 7 kHz, AV = 1 200
CMRR Common-mode rejection ratio VIC = 0 to 1.7 V, VO = 1.5 V, RS = 50 83 dB
Supply voltage rejection ratio
k
SVR
ygj
(VDD/VIO)
V
DD
= 2.7 V to 8 V,
V
IC
=
VDD/2
,
No load95dB
I
DD
Supply current VO = 1.5 V, No load 11 µA
Referenced to 1.5 V
TLV2211, TLV2211Y Advanced LinCMOS RAIL-TO-RAIL MICROPOWER SINGLE OPERATIONAL AMPLIFIERS
SLOS156B – MAY 1996 – REVISED JANUAR Y 1997
10
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
electrical characteristics at VDD = 5 V, TA = 25°C (unless otherwise noted)
TLV2211Y
PARAMETER
TEST CONDITIONS
MIN TYP MAX
UNIT
V
IO
Input offset voltage
0.45 mV
I
IO
Input offset current
VDD± = ±2.5 V,
VIC = 0, VO = 0,
0.5 pA
I
IB
Input bias current
R
S
= 50
1 pA
–0.3
V
ICR
Common-mode input voltage range | VIO | ≤5 mV , RS = 50
to
V
ICR
gg
IO
S
4.2
p
IOH = –100 µA 4.95
VOHHigh-level output voltage
IOH = –250 µA 4.875
V
p
VIC = 2.5 V, IOL = 50 µA 12
VOLLow-level output voltage
VIC = 2.5 V, IOL = 500 µA 120
mV
Large-signal differential
RL = 10 k
12
A
VD
gg
voltage amplification
V
IC
= 2.5 V,
V
O
= 1 V to 4
V
RL = 1 M
800
V/mV
r
i(d)
Differential input resistance 10
12
r
i(c)
Common-mode input resistance 10
12
c
i(c)
Common-mode input capacitance f = 10 kHz 5 pF
z
o
Closed-loop output impedance f = 7 kHz, AV = 1 200
CMRR Common-mode rejection ratio VIC = 0 to 2.7 V, VO = 2.5 V, RS = 50 83 dB
Supply voltage rejection ratio
k
SVR
ygj
(VDD/VIO)
V
DD
= 4.4 V to 8 V,
V
IC
=
VDD/2
,
No load95dB
I
DD
Supply current VO = 2.5 V, No load 13 µA
Referenced to 1.5 V
TLV2211, TLV2211Y
Advanced LinCMOS RAIL-TO-RAIL
MICROPOWER SINGLE OPERATIONAL AMPLIFIERS
SLOS156B – MAY 1996 – REVISED JANUAR Y 1997
11
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Table of Graphs
FIGURE
p
Distribution 1, 2
VIOInput offset voltage
vs Common-mode input voltage
,
3, 4
α
VIO
Input offset voltage temperature coefficient Distribution 5, 6
IIB/I
IO
Input bias and input offset currents vs Free-air temperature 7
p
vs Supply voltage 8
VIInput voltage
yg
vs Free-air temperature 9
V
OH
High-level output voltage vs High-level output current 10, 13
V
OL
Low-level output voltage vs Low-level output current 11, 12, 14
V
O(PP)
Maximum peak-to-peak output voltage vs Frequency 15
p
vs Supply voltage 16
IOSShort-circuit output current
yg
vs Free-air temperature 17
V
O
Output voltage vs Differential input voltage 18, 19
vs Load resistance 20
A
VD
Differential voltage amplification
vs Frequency
21, 22
VD
g
vs Free-air temperature 23, 24
z
o
Output impedance vs Frequency 25, 26
vs Frequency 27
CMRR
Common-mode rejection ratio
qy
vs Free-air temperature 28
pp
vs Frequency 29, 30
k
SVR
Suppl
y-v
oltage rejection ratio
qy
vs Free-air temperature
,
31
I
DD
Supply current vs Supply voltage 32
vs Load capacitance 33
SR
Slew rate
vs Free-air temperature 34
V
O
Large-signal pulse response vs Time 35, 36, 37, 38
V
O
Small-signal pulse response vs Time 39, 40, 41, 42
V
n
Equivalent input noise voltage vs Frequency 43, 44 Noise voltage (referred to input) Over a 10-second period 45
THD + N Total harmonic distortion plus noise vs Frequency 46
p
vs Free-air temperature 47
Gain-bandwidth product
vs Supply voltage 48 vs Frequency 21, 22
φmPhase margin
qy
vs Load capacitance
,
49
Gain margin vs Load capacitance 50
B
1
Unity-gain bandwidth vs Load capacitance 51
TLV2211, TLV2211Y Advanced LinCMOS RAIL-TO-RAIL MICROPOWER SINGLE OPERATIONAL AMPLIFIERS
SLOS156B – MAY 1996 – REVISED JANUAR Y 1997
12
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 1
Precentage of Amplifiers – %
DISTRIBUTION OF TLV2211
INPUT OFFSET VOLTAGE
VIO – Input Offset Voltage – mV
15
10
5
0
20
25
30
–1.5 –1 –0.5 0 0.5 1 1.5
376 Amplifiers From 1 Wafer Lot VDD = ±1.5 V TA = 25°C
Figure 2
Precentage of Amplifiers – %
DISTRIBUTION OF TLV2211
INPUT OFFSET VOLTAGE
VIO – Input Offset Voltage – mV
15
10
5
0
20
25
30
–1.5 –1 –0.5 0 0.5 1 1.5
376 Amplifiers From 1 Wafer Lot VDD = ±2.5 V TA = 25°C
Figure 3
– Input Offset Voltage – mV
INPUT OFFSET VOLTAGE
vs
COMMON-MODE INPUT VOLTAGE
V
IO
VIC – Common-Mode Input Voltage – V
1
0.8
0.6
0.4
0.2
0 –0.2 –0.4
–0.6
–0.8
–1
–1 0 1 2
VDD = 3 V RS = 50 TA = 25°C
3
Figure 4
– Input Offset Voltage – mV
INPUT OFFSET VOLTAGE
vs
COMMON-MODE INPUT VOLTAGE
V
IO
VIC – Common-Mode Input Voltage – V
1
0.8
0.6
0.4
0.2
0 –0.2 –0.4
–0.6
–0.8
–1
1012345
VDD = 5 V RS = 50 TA = 25°C
For all curves where VDD = 5 V, all loads are referenced to 2.5 V. For all curves where VDD = 3 V, all loads are referenced to 1.5 V.
TLV2211, TLV2211Y
Advanced LinCMOS RAIL-TO-RAIL
MICROPOWER SINGLE OPERATIONAL AMPLIFIERS
SLOS156B – MAY 1996 – REVISED JANUAR Y 1997
13
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 5
DISTRIBUTION OF TLV2211 INPUT OFFSET
VOLTAGE TEMPERATURE COEFFICIENT
Percentage of Amplifiers – %
α
VIO
– Temperature Coefficient – µV/°C
30
20
10
0
40
50
–3 –2 –1 0 1 2 3
32 Amplifiers From 1 Wafer Lot VDD = ±1.5 V P Package TA = 25°C
Figure 6
DISTRIBUTION OF TLV2211 INPUT OFFSET
VOLTAGE TEMPERATURE COEFFICIENT
Percentage of Amplifiers – %
α
VIO
– Temperature Coefficient – µV/°C
30
20
10
0
40
50
–3 –2 –1 0 1 2 3
32 Amplifiers From 1 Wafer Lot VDD = ±2.5 V P Package TA = 25°C
Figure 7
IIB and IIO – Input Bias and Input Offset Currents – pA
INPUT BIAS AND INPUT OFFSET CURRENTS
vs
FREE-AIR TEMPERATURE
I
IB
I
IO
TA – Free-Air Temperature – °C
50
40
20 10
0
90
30
25 45 65 85
70
60
80
100
105 125
I
IB
I
IO
V
DD±
= ±2.5 V
VIC = 0 VO = 0 RS = 50
Figure 8
0
4
1 1.5 2 2.5
– Input Voltage – V
2
1
3
INPUT VOLTAGE
vs
SUPPLY VOLTAGE
5
3 3.5 4
–1 –2
–3 –4
–5
RS = 50 TA = 25°C
| VIO | 5 mV
V
I
| V
DD±
| – Supply Voltage – V
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
TLV2211, TLV2211Y Advanced LinCMOS RAIL-TO-RAIL MICROPOWER SINGLE OPERATIONAL AMPLIFIERS
SLOS156B – MAY 1996 – REVISED JANUAR Y 1997
14
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 9
– Input Voltage – V
INPUT VOLTAGE
†‡
vs
FREE-AIR TEMPERATURE
V
I
TA – Free-Air Temperature – °C
2
1
0
3
4
5
–1
–55 –35 –15 5 25 45 65 85
| VIO | 5 mV
VDD = 5 V
105 125
Figure 10
– High-Level Output Voltage – V
HIGH-LEVEL OUTPUT VOLTAGE
†‡
vs
HIGH-LEVEL OUTPUT CURRENT
V
OH
| IOH | – High-Level Output Current – µA
2
1.5
1
0
0 200 400
2.5
3
600 800
VDD = 3 V
TA = –40°C
0.5
TA = 25°C
TA = 85°C
TA = 125°C
Figure 11
– Low-Level Output Voltage – V
LOW-LEVEL OUTPUT VOLTAGE
vs
LOW-LEVEL OUTPUT CURRENT
V
OL
IOL – Low-Level Output Current – mA
0.6
0.4
0.2
0
0123
0.8
1
1.2
45
V
DD
= 3 V
TA = 25°C
VIC = 0
VIC = 0.75 V
VIC = 1.5 V
Figure 12
– Low-Level Output Voltage – V
LOW-LEVEL OUTPUT VOLTAGE
†‡
vs
LOW-LEVEL OUTPUT CURRENT
V
OL
IOL – Low-Level Output Current – mA
0.4
0.2
1.2
0
012 3
0.8
0.6
1
1.4
45
T
A
= 85°C
TA = – 40°C
TA = 25°C
TA = 125°C
VDD = 3 V VIC = 1.5 V
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
For all curves where VDD = 5 V, all loads are referenced to 2.5 V. For all curves where VDD = 3 V, all loads are referenced to 1.5 V.
TLV2211, TLV2211Y
Advanced LinCMOS RAIL-TO-RAIL
MICROPOWER SINGLE OPERATIONAL AMPLIFIERS
SLOS156B – MAY 1996 – REVISED JANUAR Y 1997
15
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 13
– High-Level Output Voltage – V
HIGH-LEVEL OUTPUT VOLTAGE
†‡
vs
HIGH-LEVEL OUTPUT CURRENT
V
OH
| IOH | – High-Level Output Current – µA
3
2
1
0
0 200 400 600
4
5
800 1000
TA = –40°C
TA = 25°C
TA = 125°C
TA = 85°C
VDD = 5 V VIC = 2.5 V
Figure 14
– Low-Level Output Voltage – V
LOW-LEVEL OUTPUT VOLTAGE
†‡
vs
LOW-LEVEL OUTPUT CURRENT
V
OL
IOL – Low-Level Output Current – mA
0.6
0.4
0.2
0
01 2 3
1
1.2
1.4
456
0.8
VDD = 5 V VIC = 2.5 V
TA = –40°C
TA = 85°C
TA = 25°C
TA = 125°C
Figure 15
– Maximum Peak-to-Peak Output Voltage – V
f – Frequency – Hz
MAXIMUM PEAK-TO-PEAK OUTPUT VOLTAGE
vs
FREQUENCY
V
O(PP)
4
2
1
5
3
0
RI = 10 k TA = 25°C
VDD = 5 V
VDD = 3 V
10
2
10
3
10
4
Figure 16
– Short-Circuit Output Current – mA
SHORT-CIRCUIT OUTPUT CURRENT
vs
SUPPLY VOLTAGE
I
OS
VDD – Supply Voltage – V
10
6
2
2345
14
16
678
12
8
4
0
–2
VID = –100 mV
VID = 100 mV
VO = VDD/2 VIC = VDD/2 TA = 25°C
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
For all curves where VDD = 5 V, all loads are referenced to 2.5 V. For all curves where VDD = 3 V, all loads are referenced to 1.5 V.
TLV2211, TLV2211Y Advanced LinCMOS RAIL-TO-RAIL MICROPOWER SINGLE OPERATIONAL AMPLIFIERS
SLOS156B – MAY 1996 – REVISED JANUAR Y 1997
16
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 17
– Short-Circuit Output Current – mA
SHORT-CIRCUIT OUTPUT CURRENT
†‡
vs
FREE-AIR TEMPERATURE
I
OS
TA – Free-Air Temperature – °C
14
10
6
4
2
0
–2
–50 –25 0 25 50 75 100–75 125
8
12
VID = –100 mV
VID = 100 mV
VDD = 5 V VIC = 2.5 V VO = 2.5 V
Figure 18
0
0.5
1
1.5
2
2.5
3
–250–500–750–1000 250 500 750 10000
VDD = 3 V RI = 10 k VIC = 1.5 V TA = 25°C
OUTPUT VOLTAGE
vs
DIFFERENTIAL INPUT VOLTAGE
VID – Differential Input Voltage – µV
– Output Voltage – VV
O
Figure 19
VID – Differential Input Voltage – µV
– Output Voltage – V V
O
0
1
3
2
4
5
VDD = 5 V VIC = 2.5 V RL = 10 k TA = 25°C
–250–500–750–1000 250 500 750 10000
OUTPUT VOLTAGE
vs
DIFFERENTIAL INPUT VOLTAGE
Figure 20
DIFFERENTIAL VOLTAGE AMPLIFICATION
vs
LOAD RESISTANCE
RL – Load Resistance – k
– Differential Voltage Amplification – V/mV
A
VD
10
3
10
2
10
1
1
0.1 1 10
1
10
2
10
3
V
O(PP)
= 2 V
TA = 25°C
VDD = 5 V
VDD = 3 V
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
For all curves where VDD = 5 V, all loads are referenced to 2.5 V. For all curves where VDD = 3 V, all loads are referenced to 1.5 V.
TLV2211, TLV2211Y
Advanced LinCMOS RAIL-TO-RAIL
MICROPOWER SINGLE OPERATIONAL AMPLIFIERS
SLOS156B – MAY 1996 – REVISED JANUAR Y 1997
17
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
om – Phase Margin
φ
m
f – Frequency – Hz
LARGE-SIGNAL DIFFERENTIAL VOLTAGE
AMPLIFICATION AND PHASE MARGIN
vs
FREQUENCY
AVD – Large-Signal Differential
A
VD
Voltage Amplification – dB
40
30
20
10
0
–10
–20
–30
–40
10
3
10
4
10
5
10
6
90°
45°
0°
–45°
–90°
VDD = 3 V RL = 10 k CL= 100 pF TA = 25°C
Phase Margin
Gain
Figure 21
om – Phase Margin
φ
m
f – Frequency – Hz
LARGE-SIGNAL DIFFERENTIAL VOLTAGE
AMPLIFICATION AND PHASE MARGIN
vs
FREQUENCY
AVD – Large-Signal Differential
A
VD
Voltage Amplification – dB
40
30
20
10
0
–10
–20
–30
–40
10
3
10
4
10
5
10
6
90°
45°
0°
–45°
–90°
VDD = 5 V RL= 10 k CL= 100 pF TA = 25°C
Phase Margin
Gain
Figure 22
For all curves where VDD = 5 V, all loads are referenced to 2.5 V. For all curves where VDD = 3 V, all loads are referenced to 1.5 V.
TLV2211, TLV2211Y Advanced LinCMOS RAIL-TO-RAIL MICROPOWER SINGLE OPERATIONAL AMPLIFIERS
SLOS156B – MAY 1996 – REVISED JANUAR Y 1997
18
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 23
LARGE-SIGNAL DIFFERENTIAL
VOLTAGE AMPLIFICATION
†‡
vs
FREE-AIR TEMPERATURE
TA – Free-Air Temperature – °C
– Large-Signal Differential Voltage
A
VD
Amplification – V/mV
–50 –25 0 25 50 75 100
RL = 10 k
RL = 1 M
10
3
10
2
10
1
1
VDD = 3 V VIC = 1.5 V VO = 0.5 V to 2.5 V
–75 125
Figure 24
LARGE-SIGNAL DIFFERENTIAL
VOLTAGE AMPLIFICATION
†‡
vs
FREE-AIR TEMPERATURE
TA – Free-Air Temperature – °C
– Large-Signal Differential Voltage A
VD
Amplification – V/mV
10
4
10
3
10
2
10
1
1
–75 –50 –25 0 25 50 75 100 125
VDD = 5 V VIC = 2.5 V VO = 1 V to 4 V
RL = 1 M
RL = 10 k
Figure 25
– Output Impedance –
f– Frequency – Hz
OUTPUT IMPEDANCE
vs
FREQUENCY
z
o
10
1
10
2
10
3
10
4
AV = 100
AV = 10
AV = 1
VDD = 3 V TA = 25°C
10
3
10
2
10
1
1
Figure 26
– Output Impedance –
f– Frequency – Hz
OUTPUT IMPEDANCE
vs
FREQUENCY
z
o
AV = 100
AV = 1
VDD = 5 V TA = 25°C
1
10
1
10
2
10
3
10
4
AV = 10
10
3
10
2
10
1
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
For all curves where VDD = 5 V, all loads are referenced to 2.5 V. For all curves where VDD = 3 V, all loads are referenced to 1.5 V.
TLV2211, TLV2211Y
Advanced LinCMOS RAIL-TO-RAIL
MICROPOWER SINGLE OPERATIONAL AMPLIFIERS
SLOS156B – MAY 1996 – REVISED JANUAR Y 1997
19
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 27
CMRR – Common-Mode Rejection Ratio – dB
f – Frequency – Hz
COMMON-MODE REJECTION RATIO
vs
FREQUENCY
80
40
20
0
100
60
10
1
10
2
10
3
10
4
10
5
VDD = 5 V VO = 2.5 V
VDD = 3 V VO = 1.5 V
TA = 25°C
Figure 28
CMMR – Common-Mode Rejection Ratio – dB
COMMON-MODE REJECTION RATIO
†‡
vs
FREE-AIR TEMPERATURE
TA – Free-Air Temperature – °C
82
80
78
86
84
88
VDD = 5 V
VDD = 3 V
– 50 – 25 0 25 50 75 100
– 75 125
Figure 29
– Supply-Voltage Rejection Ratio – dB
f – Frequency – Hz
SUPPLY-VOLTAGE REJECTION RATIO
vs
FREQUENCY
k
SVR
60
40
20
100
80
0
–20
k
SVR–
k
SVR+
10
1
10
2
10
3
10
4
10
5
10
6
VDD = 3 V TA = 25°C
Figure 30
– Supply-Voltage Rejection Ratio – dB
f – Frequency – Hz
SUPPLY-VOLTAGE REJECTION RATIO
vs
FREQUENCY
k
SVR
100
80
60
40
20
0
–20
10
1
10
2
10
3
10
4
10
5
10
6
VDD = 5 V TA = 25°C
k
SVR–
k
SVR+
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
For all curves where VDD = 5 V, all loads are referenced to 2.5 V. For all curves where VDD = 3 V, all loads are referenced to 1.5 V.
TLV2211, TLV2211Y Advanced LinCMOS RAIL-TO-RAIL MICROPOWER SINGLE OPERATIONAL AMPLIFIERS
SLOS156B – MAY 1996 – REVISED JANUAR Y 1997
20
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 31
– Supply-Voltage Rejection Ratio – dB
SUPPLY-VOLTAGE REJECTION RATIO
vs
FREE-AIR TEMPERATURE
Á
Á
k
SVR
TA – Free-Air Temperature – °C
94
92
90
98
100
–50 –25 0 25 50 75 100
VDD = 2.7 V to 8 V VIC = VO = VDD /2
125–75
96
Figure 32
– Supply Current –
Aµ
I
DD
VDD – Supply Voltage – V
SUPPLY CURRENT
vs
SUPPLY VOLTAGE
VO = V
DD/2
VIC = V
DD/2
No Load
TA = 25°C
TA = 85°C
TA = –40°C
15
10
5
0246
20
25
30
810
0
Figure 33
SR – Slew Rate –
SLEW RATE
vs
LOAD CAPACITANCE
CL – Load Capacitance – pF
0.030
0.05
0.020
0
0.040
0.025
0.035
0.010
0.015
10
1
10
2
10
3
10
4
10
5
VDD = 5 V AV = –1 TA = 25°C
SR–
SR+
sµ
V/
Figure 34
SLEW RATE
†‡
vs
FREE-AIR TEMPERATURE
TA – Free-Air Temperature – °C
SR – Slew Rate –
sµ V/
0.020
0.010
0
0.030
0.040
0.050
–50 –25 0 25 50 75 100
SR–
SR+
VDD = 5 V RL = 10 k CL = 100 pF AV = 1
–75 125
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
For all curves where VDD = 5 V, all loads are referenced to 2.5 V. For all curves where VDD = 3 V, all loads are referenced to 1.5 V.
TLV2211, TLV2211Y
Advanced LinCMOS RAIL-TO-RAIL
MICROPOWER SINGLE OPERATIONAL AMPLIFIERS
SLOS156B – MAY 1996 – REVISED JANUAR Y 1997
21
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 35
– Output Voltage – V
INVERTING LARGE-SIGNAL PULSE
RESPONSE
V
O
t – Time – µs
1.5
1
0.5
0
0 50 100 150 200 250 300
2
2.5
3
350 400 450 500
AV = –1 TA = 25°C
VDD = 3 V RL = 10 k CL = 100 pF
Figure 36
INVERTING LARGE-SIGNAL PULSE
RESPONSE
t – Time – µs
– Output Voltage – V V
O
2
1
0
0 50 100 150 200 250 300
3
4
5
350 400 450 500
VDD = 5 V RL = 10 k CL = 100 pF AV = –1 TA = 25°C
Figure 37
VOLTAGE-FOLLOWER LARGE-SIGNAL
PULSE RESPONSE
– Output Voltage – V V
O
t – Time – µs
2
1
0
0 100 200 300 400 500 600
3
4
5
700 800 900 1000
VDD = 5 V RL = 10 k CL = 100 pF AV = 1 TA = 25°C
Figure 38
VOLTAGE-FOLLOWER LARGE-SIGNAL
PULSE RESPONSE
– Output Voltage – V V
O
t – Time – µs
2
1
0
0 100 200 300 400 500
3
4
5
VDD = 5 V CL = 100 pF AV = 1 TA = 25°C
RL = 10 k
Tied to 2.5 V
RL = 100 k
Tied to 2.5 V
RL = 10 k Tied to 0 V
For all curves where VDD = 5 V, all loads are referenced to 2.5 V. For all curves where VDD = 3 V, all loads are referenced to 1.5 V.
TLV2211, TLV2211Y Advanced LinCMOS RAIL-TO-RAIL MICROPOWER SINGLE OPERATIONAL AMPLIFIERS
SLOS156B – MAY 1996 – REVISED JANUAR Y 1997
22
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 39
INVERTING SMALL-SIGNAL
PULSE RESPONSE
– Output Voltage – V
V
O
t – Time – µs
0.68
0.66
074
0.64 0102030
0.7
0.72
0.76
40 50
VDD = 3 V RL = 10 k CL = 100 pF AV = –1 TA = 25°C
Figure 40
VO – Output Voltage – V
INVERTING SMALL-SIGNAL
PULSE RESPONSE
V
O
t – Time – µs
2.5
2.46
2.44 0102030
2.52
2.56
2.58
40 50
VDD = 5 V RL = 10 k CL = 100 pF AV = –1 TA = 25°C
2.48
2.54
Figure 41
VOLTAGE-FOLLOWER SMALL-SIGNAL
PULSE RESPONSE
VO – Output Voltage – V
V
O
t – Time – µs
VDD = 3 V RL = 10 k CL = 100 pF AV = 1 TA = 25°C
0.7
0.68
0.66
0.64 01020304050
0.72
0.74
0.76
Figure 42
VOLTAGE-FOLLOWER SMALL-SIGNAL
PULSE RESPONSE
VO – Output Voltage – V
V
O
t – Time – µs
2.5
2.48
2.46
2.44 01020304050
2.54
2.56
2.58
2.52
VDD = 5 V RL = 10 k CL = 100 pF AV = 1 TA = 25°C
For all curves where VDD = 5 V, all loads are referenced to 2.5 V. For all curves where VDD = 3 V, all loads are referenced to 1.5 V.
TLV2211, TLV2211Y
Advanced LinCMOS RAIL-TO-RAIL
MICROPOWER SINGLE OPERATIONAL AMPLIFIERS
SLOS156B – MAY 1996 – REVISED JANUAR Y 1997
23
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 43
– Equivalent Input Noise Voltage –
f – Frequency – Hz
EQUIVALENT INPUT NOISE VOLTAGE
vs
FREQUENCY
V
n
nV/
Hz
40
30
20
0
60
50
10
VDD = 3 V RS = 20 TA = 25°C
70
80
10
1
10
2
10
3
10
4
Figure 44
– Equivalent Input Noise Voltage –
f – Frequency – Hz
EQUIVALENT INPUT NOISE VOLTAGE
vs
FREQUENCY
V
n
nV/ Hz
40
20
10
0
60
30
50
VDD = 5 V RS = 20 TA = 25°C
70
80
10
1
10
2
10
3
10
4
Figure 45
Noise Voltage – nV
t – Time – s
INPUT NOISE VOLTAGE OVER
A 10-SECOND PERIOD
0246
0
750
1000
810
500
–250
–500
–750
–1000
250
VDD = 5 V f = 0.1 Hz to 10 Hz TA = 25°C
Figure 46
f – Frequency – Hz
THD + N – Total Harmonic Distortion Plus Noise – %
TOTAL HARMONIC DISTORTION PLUS NOISE
vs
FREQUENCY
10
2
10
3
10
4
AV = 10
AV = 1
10
1
0.1
0.01 10
1
AV = 100
VDD = 10 V VIC = 2.5 V RL = 10 k TA = 25°C
For all curves where VDD = 5 V, all loads are referenced to 2.5 V. For all curves where VDD = 3 V, all loads are referenced to 1.5 V.
TLV2211, TLV2211Y Advanced LinCMOS RAIL-TO-RAIL MICROPOWER SINGLE OPERATIONAL AMPLIFIERS
SLOS156B – MAY 1996 – REVISED JANUAR Y 1997
24
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 47
Gain-Bandwidth Product – kHz
GAIN-BANDWIDTH PRODUCT
†‡
vs
FREE-AIR TEMPERATURE
TA – Free-Air Temperature – °C
70
55
50
75
80
–50 – 25 0 25 50 10075
65
VDD = 5 V f = 10 kHz RL = 10 k CL = 100 pF
125–75
60
Figure 48
GAIN-BANDWIDTH PRODUCT
vs
SUPPLY VOLTAGE
VDD – Supply Voltage – V
Gain-Bandwidth Product – kHz
65
55
50
75
80
123 4 5 76
60
RL = 10 k CL = 100 pF TA 25°C
80
70
Figure 49
om – Phase Margin
PHASE MARGIN
vs
LOAD CAPACITANCE
CL – Load Capacitance – pF
m
φ
75°
60°
45°
30°
15°
0
10
1
10
2
10
3
10
4
10
5
10 k
10 k
V
DD–
V
DD+
R
null
C
L
V
I
+
R
null
= 0
R
null
= 1000
R
null
= 500
TA = 25°C
Figure 50
Gain Margin – dB
GAIN MARGIN
vs
LOAD CAPACITANCE
CL – Load Capacitance – pF
25
20
15
10
5
0 10
1
10
2
10
3
10
4
10
5
R
null
= 0
R
null
= 1000
R
null
= 500
TA = 25°C
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
For all curves where VDD = 5 V, all loads are referenced to 2.5 V. For all curves where VDD = 3 V, all loads are referenced to 1.5 V.
TLV2211, TLV2211Y
Advanced LinCMOS RAIL-TO-RAIL
MICROPOWER SINGLE OPERATIONAL AMPLIFIERS
SLOS156B – MAY 1996 – REVISED JANUAR Y 1997
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POST OFFICE BOX 655303 DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
– Unity-Gain Bandwidth – kHz
UNITY-GAIN BANDWIDTH
vs
LOAD CAPACITANCE
CL – Load Capacitance – pF
B
1
60
10
40
0
80
50
70
20
30
10
1
10
2
10
3
10
4
10
5
TA = 25°C
10
6
Figure 51
APPLICATION INFORMATION
driving large capacitive loads
The TLV2211 is designed to drive larger capacitive loads than most CMOS operational amplifiers. Figure 49 and Figure 50 illustrate its ability to drive loads up to 600 pF while maintaining good gain and phase margins (R
null
= 0).
A smaller series resistor (R
null
) at the output of the device (see Figure 52) improves the gain and phase margins when driving large capacitive loads. Figure 49 and Figure 50 show the effects of adding series resistances of 500 Ω and 1000 . The addition of this series resistor has two effects: the first is that it adds a zero to the transfer function and the second is that it reduces the frequency of the pole associated with the output load in the transfer function.
The zero introduced to the transfer function is equal to the series resistance times the load capacitance. To calculate the improvement in phase margin, equation (1) can be used.
∆φ
m1
+
tan
–1
ǒ
2 × π × UGBW × R
null
× C
L
Ǔ
∆φm1+
improvement in phase margin
UGBW
+
unity-gain bandwidth frequency
R
null
+
output series resistance
C
L
+
load capacitance
(1)
where :
TLV2211, TLV2211Y Advanced LinCMOS RAIL-TO-RAIL MICROPOWER SINGLE OPERATIONAL AMPLIFIERS
SLOS156B – MAY 1996 – REVISED JANUAR Y 1997
26
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
APPLICATION INFORMATION
driving large capacitive loads (continued)
The unity-gain bandwidth (UGBW) frequency decreases as the capacitive load increases (see Figure 51). To use equation (1), UGBW must be approximated from Figure 51.
10 k
10 k
V
DD–
/GND
V
DD+
R
null
C
L
V
I
+
Figure 52. Series-Resistance Circuit
driving heavy dc loads
The TL V2211 is designed to provide better sinking and sourcing output currents than earlier CMOS rail-to-rail output devices. This device is specified to sink 500 µA and source 250 µA at V
DD
= 3 V and VDD = 5 V at a
maximum quiescent I
DD
of 25 µA. This provides a greater than 90% power efficiency.
When driving heavy dc loads, such as 10 k, the positive edge under slewing conditions can experience some distortion. This condition can be seen in Figure 37. This condition is affected by three factors.
D
Where the load is referenced. When the load is referenced to either rail, this condition does not occur. The distortion occurs only when the output signal swings through the point where the load is referenced. Figure 38 illustrates two 10-k load conditions. The first load condition shows the distortion seen for a 10-k load tied to 2.5 V. The third load condition shows no distortion for a 10-k load tied to 0 V.
D
Load resistance. As the load resistance increases, the distortion seen on the output decreases. Figure 38 illustrates the difference seen on the output for a 10-k load and a 100-k load with both tied to 2.5 V.
D
Input signal edge rate. Faster input edge rates for a step input result in more distortion than with slower input edge rates.
TLV2211, TLV2211Y
Advanced LinCMOS RAIL-TO-RAIL
MICROPOWER SINGLE OPERATIONAL AMPLIFIERS
SLOS156B – MAY 1996 – REVISED JANUAR Y 1997
27
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
APPLICATION INFORMATION
macromodel information
Macromodel information provided was derived using Microsim
Parts
, the model generation software used
with Microsim
PSpice
. The Boyle macromodel (see Note 6) and subcircuit in Figure 53 are generated using
the TLV2211 typical electrical and operating characteristics at T
A
= 25°C. Using this information, output
simulations of the following key parameters can be generated to a tolerance of 20% (in most cases):
D
Maximum positive output voltage swing
D
Maximum negative output voltage swing
D
Slew rate
D
Quiescent power dissipation
D
Input bias current
D
Open-loop voltage amplification
D
Unity-gain frequency
D
Common-mode rejection ratio
D
Phase margin
D
DC output resistance
D
AC output resistance
D
Short-circuit output current limit
NOTE 6: G. R. Boyle, B. M. Cohn, D. O. Pederson, and J. E. Solomon, “Macromodeling of Integrated Circuit Operational Amplifiers”,
IEEE Journal
of Solid-State Circuits,
SC-9, 353 (1974).
OUT
+
+
+
+
+ –
+
+
+
+
.SUBCKT TLV2211 1 2 3 4 5
C1 11 12 8.86E–12 C2 6 7 50.00E–12 DC 5 53 DX DE 54 5 DX DLP 90 91 DX DLN 92 90 DX DP 43DX EGND 99 0 POLY (2) (3,0) (4,0) 0 .5 .5 FB 7 99 POLY (5) VB VC VE VLP + VLN 0 4.29E6 –6E6 6E6 6E6 –6E6 GA 6 0 11 12 9.425E–6 GCM 0 6 10 99 1320.2E–12 ISS 3 10 DC 1.250E–6 HLIM 90 0 VLIM 1K J1 11 2 10 JX J2 12 1 10 JX R2 6 9 100.0E3
RD1 60 11 106.1E3 RD2 60 12 106.1E3 R01 8 5 50 R02 7 99 150 RP 3 4 419.2E3 RSS 10 99 160.0E6 VAD 60 4 –.5 VB 9 0 DC 0 VC 3 53 DC .55 VE 54 4 DC .55 VLIM 7 8 DC 0 VLP 91 0 DC 0.1 VLN 0 92 DC 2.6 .MODEL DX D (IS=800.0E–18) .MODEL JX PJF (IS=500.0E–15 BETA=166E–6 + VTO=–.004) .ENDS
V
DD+
RP
IN –
2
IN+
1
V
DD–
VAD
RD1
11
J1 J2
10
RSS ISS
3
12
RD2
60
VE
54
DE
DP
VC
DC
4
C1
53
R2
6
9
EGND
VB
FB
C2
GCM
GA
VLIM
8
5
RO1
RO2
HLIM
90
DLP
91
DLN
92
VLNVLP
99
7
Figure 53. Boyle Macromodel and Subcircuit
PSpice
and
Parts
are trademark of MicroSim Corporation.
TLV2211, TLV2211Y Advanced LinCMOS RAIL-TO-RAIL MICROPOWER SINGLE OPERATIONAL AMPLIFIERS
SLOS156B – MAY 1996 – REVISED JANUAR Y 1997
28
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
MECHANICAL INFORMATION
DBV (R-PDSO-G5) PLASTIC SMALL-OUTLINE PACKAGE
0,25
Gage Plane
0,15 NOM
4073253-3/A 09/95
3,00
0,20
0,40
1,80 1,50
2,50
45
3
3,10
1
2,70
1,00
1,30
0,05 MIN
Seating Plane
0,10
0,95
M
0,25
0°–8°
2
NOTES: A. All linear dimensions are in millimeters.
B. This drawing is subject to change without notice.
C. Body dimensions include mold flash or protrusion.
IMPORTANT NOTICE
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