TEXAS INSTRUMENTS THS4211, THS4215 Technical data
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1
2
3
4
8
7
6
5
NC
ININ+
V
S-
NC
VS+
V
OUT
NC
THS4211
_
+
392 Ω
+5 V
49.9 Ω
V
I
-5 V
50 Ω Source
Low-Distortion, Wideband Application Circuit
NOTE: Power supply decoupling capacitors not shown
V
O
392 Ω
50 Ω
THS4211
-100
-95
-90
-85
-80
-75
-70
-65
-60
-55
-50
1 10 100
Harmonic Distortion - dBc
HARMONIC DISTORTION
vs
FREQUENCY
f - Frequency - MHz
Gain = 2
Rf = 392 Ω
RL = 150 Ω
VO = 2 V
PP
VS = ±5 V
HD2
HD3
查询THS4211DG4供应商
SLOS400D – SEPTEMBER 2002 – REVISED NOVEMBER 2004
LOW-DISTORTION, HIGH-SPEED, VOLTAGE FEEDBACK AMPLIFIER
FEATURES DESCRIPTION
• Unity Gain Stability
• Wide Bandwidth: 1 GHz
• High Slew Rate: 970 V/µs
• Low Distortion
– –90 dBc THD at 30 MHz capability. The combination of high slew rate, wide
– 130 MHz Bandwidth (0.1 dB, G = 2)
– 0.007% Differential Gain
– 0.003 ° Differential Phase
• High Output Drive, IO= 200 mA
• Excellent Video Performance without the stability concerns of decompensated
– 130 MHz Bandwidth (0.1 dB, G = 2)
– 0.007% Differential Gain
– 0.003 ° Differential Phase
• Supply Voltages
– +5 V, ± 5 V, +12 V, +15 V
• Power Down Functionality (THS4215)
• Evaluation Module Available
The THS4211 and THS4215 are high slew rate, unity
gain stable voltage feedback amplifiers designed to
run from supply voltages as low as 5 V and as high
as 15 V. The THS4215 offers the same performance
as the THS4211 with the addition of power-down
bandwidth, low distortion, and unity gain stability
make the THS4211 and THS4215 high performance
devices across multiple ac specifications.
Designers using the THS4211 are rewarded with
higher dynamic range over a wider frequency band
amplifiers. The devices are available in SOIC, MSOP
with PowerPAD™, and leadless MSOP with
PowerPAD packages.
THS4211
THS4215
APPLICATIONS
• High Linearity ADC Preamplifier
• Differential to Single-Ended Conversion
• DAC Output Buffer
• Active Filtering
• Video Applications
PowerPAD is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
RELATED DEVICES
DEVICE DESCRIPTION
THS4271 1.4 GHz voltage feedback amplifier
THS4503 Wideband fully differential amplifier
THS3202 Dual, wideband current feedback amplifier
Copyright © 2002–2004, Texas Instruments Incorporated
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THS4211
THS4215
SLOS400D – SEPTEMBER 2002 – REVISED NOVEMBER 2004
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated
circuits be handled with appropriate precautions. Failure to observe proper handling and installation
procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision
integrated circuits may be more susceptible to damage because very small parametric changes could
cause the device not to meet its published specifications.
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range (unless otherwise noted)
Supply voltage, V
Input voltage, V
Output current, I
Continuous power dissipation See Dissipation Rating Table
Maximum junction temperature, T
Maximum junction temperature, continuous operation, long term reliability T
Storage temperature range, T
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 300 ° C
ESD ratings CDM 1500 V
(1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not implied.
(2) The absolute maximum ratings under any condition is limited by the constraints of the silicon process. Stresses above these ratings may
cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are
stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied.
(3) The maximum junction temperature for continuous operation is limited by package constraints. Operation above this temperature may
result in reduced reliability and/or lifetime of the device.
S
I
O
(2)
J
stg
HBM 4000 V
MM 200 V
(1)
UNIT
16.5 V
± V
S
100 mA
150 ° C
(3)
J
125 ° C
–65 ° C to 150 ° C
PACKAGE DISSIPATION RATINGS
PACKAGE
(1)
θ
JC
( ° C/W) ( ° C/W)
(2)
θ
JA
POWER RATING
(3)
TA≤ 25 ° C TA= 85 ° C
D (8 pin) 38.3 97.5 1.02 W 410 mW
DGN (8 pin)
(1)
4.7 58.4 1.71 W 685 mW
DGK (8 pin) 54.2 260 385 mW 154 mW
DRB (8 pin) 5 45.8 2.18 W 873 mW
(1) The THS4211/5 may incorporate a PowerPAD™ on the underside of the chip. This acts as a heat sink and must be connected to a
thermally dissipative plane for proper power dissipation. Failure to do so may result in exceeding the maximum junction temperature
which could permanently damage the device. See TI technical briefs SLMA002 and SLMA004 for more information about utilizing the
PowerPAD thermally enhanced package.
(2) This data was taken using the JEDEC standard High-K test PCB.
(3) Power rating is determined with a junction temperature of 125 ° C. This is the point where distortion starts to substantially increase.
Thermal management of the final PCB should strive to keep the junction temperature at or below 125 ° C for best performance and long
term reliability.
RECOMMENDED OPERATING CONDITIONS
MIN MAX UNIT
Supply voltage, (V
and VS–) V
S+
Input common-mode voltage range VS–+ 1.2 V
2
Dual supply ± 2.5 ± 7.5
Single supply 5 15
– 1.2 V
S+
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(TOP VIEW)
D, DRB, DGK, DGN
(TOP VIEW)
D, DRB, DGK, DGN
1
NC NC
THS4211
2
3
4
8
7
6
5
IN-
IN+
V
S-
VS+
V
OUT
NC
1
REF PD
THS4215
2
3
4
8
7
6
5
IN-
IN+
V
S-
VS+
V
OUT
NC
NC = No Connetion
NC = No Connection
See Note A.
SLOS400D – SEPTEMBER 2002 – REVISED NOVEMBER 2004
PACKAGING/ORDERING INFORMATION
PACKAGED DEVICES PACKAGE TYPE PACKAGE MARKING TRANSPORT MEDIA, QUANTITY
Non-power-down
THS4211D Rails, 75
THS4211DR Tape and Reel, 2500
THS4211DGK Rails, 100
THS4211DGKR Tape and Reel, 2500
THS4211DRBT Tape and Reel, 250
THS4211DRBR Tape and Reel, 3000
THS4211DGN Rails, 80
THS4211DGNR Tape and Reel, 2500
Power-down
THS4215D Rails, 75
THS4215DR Tape and Reel, 2500
THS4215DGK Rails, 100
THS4215DGKR Tape and Reel, 2500
THS4215DRBT Tape and Reel, 250
THS4215DRBR Tape and Reel, 3000
THS4215DGN Rails, 80
THS4215DGNR Tape and Reel, 2500
(1) The PowerPAD is electrically isolated from all other pins.
SOIC-8 —
MSOP-8 BEJ
QFN-8-PP
MSOP-8-PP
MSOP-8 BEZ
QFN-8-PP
MSOP-8-PP
(1)
(1)
SOIC-8 —
(1)
(1)
BET
BFN
BEU
BFQ
THS4211
THS4215
NOTE A: The devices with the power down option defaults to the ON state if no signal is applied to the PD pin.
PIN ASSIGNMENTS
3
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THS4211
THS4215
SLOS400D – SEPTEMBER 2002 – REVISED NOVEMBER 2004
ELECTRICAL CHARACTERISTICS, V
S
= ± 5 V
RF= 392 Ω , RL= 499 Ω , G = +2, unless otherwise noted
TYP OVER TEMPERATURE
PARAMETER TEST CONDITIONS TYP/
25 ° C 25 ° C UNITS
AC PERFORMANCE
G = 1, P
G = –1, P
Small signal bandwidth G = 2, P
G = 5, P
G = 10, P
0.1 dB flat bandwidth G = 1, P
= –7 dBm 1 GHz Typ
OUT
= –16 dBm 325 MHz Typ
OUT
= –16 dBm 325 MHz Typ
OUT
= –16 dBm 70 MHz Typ
OUT
= –16 dBm 35 MHz Typ
OUT
= –7 dBm 70 MHz Typ
OUT
Gain bandwidth product G > 10 , f = 1 MHz 350 MHz Typ
Full-power bandwidth G = –1, VO= 2 V
Slew rate
Settling time to 0.1% 22 ns Typ
Settling time to 0.01% 55 ns Typ
G = 1, VO= 2 V Step 970 V/µs Typ
G = –1, VO= 2 V Step 850 V/µs Typ
G = –1, VO= 4 V Step
p
77 MHz Typ
Harmonic distortion
2nd-order harmonic distortion
G = 1, VO= 1 VPP,
f = 30 MHz
3rd-order harmonic distortion
RL= 150 Ω –78 dBc Typ
RL= 499 Ω –90 dBc Typ
RL= 150 Ω –100 dBc Typ
RL= 499 Ω –100 dBc Typ
Harmonic distortion
2nd-order harmonic distortion
G = 2, VO= 2 VPP,
f = 30 MHz
3rd-order harmonic distortion
3rd-order intermodulation (IMD
3rd-order output intercept (OIP
Differential gain (NTSC, PAL) 0.007 % Typ
Differential phase (NTSC, PAL) 0.003 ° Typ
) G = 2, VO= 2 VPP, RL= 150 Ω , f = 70 MHz –53 dBc Typ
3
) G = 2, VO= 2 VPP, RL= 150 Ω , f = 70 MHz 32 dBm Typ
3
G = 2, RL= 150 Ω
RL= 150 Ω –68 dBc Typ
RL= 499 Ω –70 dBc Typ
RL= 150 Ω –80 dBc Typ
RL= 499 Ω –82 dBc Typ
Input voltage noise f = 1 MHz 7 nV/ √ Hz Typ
Input current noise f = 10 MHz 4 pA √ Hz Typ
DC PERFORMANCE
Open-loop voltage gain (A
) VO= ± 0.3 V, RL= 499 Ω 70 65 62 60 dB Min
OL
Input offset voltage 3 12 14 14 mV Max
Average offset voltage drift ± 40 ± 40 µV/ ° C Typ
Input bias current 7 15 18 20 µA Max
Average bias current drift ± 10 ± 10 nA/ ° C Typ
V
= 0 V
CM
Input offset current 0.3 6 7 8 µA Max
Average offset current drift ± 10 ± 10 nA/ ° C Typ
0 ° C to –40 ° C
70 ° C to 85 ° C
MIN/
MAX
4
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THS4211
THS4215
SLOS400D – SEPTEMBER 2002 – REVISED NOVEMBER 2004
TYP OVER TEMPERATURE
PARAMETER TEST CONDITIONS TYP/
25 ° C 25 ° C UNITS
INPUT CHARACTERISTICS
Common-mode input range ± 4 ± 3.8 ± 3.7 ± 3.6 V Min
Common-mode rejection ratio V
= ± 1 V 56 52 50 48 dB Min
CM
Input resistance Common-mode 4 M Ω Typ
Input capacitance Common-mode/differential 0.3/0.2 pF Typ
OUTPUT CHARACTERISTICS
Output voltage swing ± 4.0 ± 3.8 ± 3.7 ± 3.6 V Min
Output current (sourcing) 220 200 190 180 mA Min
Output current (sinking) 170 140 130 120 mA Min
RL= 10 Ω
Output impedance f = 1 MHz 0.3 Ω Typ
POWER SUPPLY
Specified operating voltage ± 5 ± 7.5 ± 7.5 ± 7.5 V Max
Maximum quiescent current 19 22 23 24 mA Max
Minimum quiescent current 19 16 15 14 mA Min
Power supply rejection (+PSRR) V
Power supply rejection (–PSRR) V
= 5.5 V to 4.5 V, V
S+
= 5 V, V
S+
= 5 V 64 58 54 54 dB Min
S–
= –5.5 V to –4.5 V 65 60 56 56 dB Min
S–
POWER-DOWN CHARACTERISTICS (THS4215 ONLY)
Enable REF+1.8 V Min
Power-down REF+1 V Max
Enable REF–1 V Min
Power-down REF–1.5 V Max
Power-down voltage level
Power-down quiescent current
Turnon time delay(t
Turnoff time delay (t
REF = 0 V, or V
REF = V
S–
or Floating
S+
PD = Ref +1.0 V, Ref = 0 V 650 850 900 1000 µA Max
PD = Ref –1.5 V, Ref = 5 V 450 650 800 900 µA Max
) 50% of final supply current value 4 µs Typ
(ON)
) 50% of final supply current value 3 µs Typ
(Off)
Input impedance 4 G Ω Typ
Output impedance f = 1 MHz 250 k Ω Typ
0 ° C to –40 ° C
70 ° C to 85 ° C
MIN/
MAX
5
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THS4211
THS4215
SLOS400D – SEPTEMBER 2002 – REVISED NOVEMBER 2004
ELECTRICAL CHARACTERISTICS, V
= 5 V
S
RF= 392 Ω , RL= 499 Ω , G = +2, unless otherwise noted
TYP OVER TEMPERATURE
PARAMETER TEST CONDITIONS TYP/
25 ° C 25 ° C UNITS
AC PERFORMANCE
G = 1, P
G = –1, P
Small signal bandwidth G = 2, P
G = 5, P
G = 10, P
0.1 dB flat bandwidth G = 1, P
= –7 dBm 980 MHz Typ
OUT
= –16 dBm 300 MHz Typ
OUT
= –16 dBm 300 MHz Typ
OUT
= –16 dBm 65 MHz Typ
OUT
= –16 dBm 30 MHz Typ
OUT
= –7 dBm 90 MHz Typ
OUT
Gain bandwidth product G > 10, f = 1 MHz 300 MHz Typ
Full-power bandwidth G = –1, VO= 2 V
Slew rate
Settling time to 0.1% 22 ns Typ
Settling time to 0.01% 84 ns Typ
G = 1, VO= 2 V Step 800 V/µs Typ
G = –1, VO= 2 V Step 750 V/µs Typ
G = –1, VO= 2 V Step
p
64 MHz Typ
Harmonic distortion
2nd-order harmonic distortion
3rd-order harmonic distortion
3rd-order intermodulation (IMD
3rd-order output intercept (OIP
G = 1, VO= 1 VPP,
f = 30 MHz
) –70 dBc Typ
3
G = 1, VO= 1 VPP, RL= 150 Ω , f = 70 MHz
) 34 dBm Typ
3
RL= 150 Ω –60 dBc Typ
RL= 499 Ω –60 dBc Typ
RL= 150 Ω –68 dBc Typ
RL= 499 Ω –68 dBc Typ
Input-voltage noise f = 1 MHz 7 nV/ √ Hz Typ
Input-current noise f = 10 MHz 4 pA/ √ Hz Typ
DC PERFORMANCE
Open-loop voltage gain (A
) VO= ± 0.3 V, RL= 499 Ω 68 63 60 60 dB Min
OL
Input offset voltage 3 12 14 14 mV Max
Average offset voltage drift ± 40 ± 40 µV/ ° C Typ
Input bias current 7 15 17 18 µA Max
Average bias current drift ± 10 ± 10 nA/ ° C Typ
V
= VS/2
CM
Input offset current 0.3 6 7 8 µA Max
Average offset current drift ± 10 ± 10 nA/ ° C Typ
INPUT CHARACTERISTICS
Common-mode input range 1/4 1.2/3.8 1.3/3.7 1.4/3.6 V Min
Common-mode rejection ratio V
= ± 0.5 V, VO= 2.5 V 54 50 48 45 dB Min
CM
Input resistance Common-mode 4 M Ω Typ
Input capacitance Common-mode/differential 0.3/0.2 pF Typ
OUTPUT CHARACTERISTICS
Output voltage swing 1/4 1.2/3.8 1.3/3.7 1.4/3.6 V Min
Output current (sourcing) 230 210 190 180 mA Min
Output current (sinking) 150 120 100 90 mA Min
RL= 10 Ω
Output impedance f = 1 MHz 0.3 Ω Typ
0 ° C to –40 ° C
70 ° C to 85 ° C
MIN/
MAX
6
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THS4211
THS4215
SLOS400D – SEPTEMBER 2002 – REVISED NOVEMBER 2004
TYP OVER TEMPERATURE
PARAMETER TEST CONDITIONS TYP/
25 ° C 25 ° C UNITS
POWER SUPPLY
Specified operating voltage 5 15 15 15 V Max
Maximum quiescent current 19 22 23 24 mA Max
Minimum quiescent current 19 16 15 14 mA Min
Power supply rejection (+PSRR) V
Power supply rejection (–PSRR) V
= 5.5 V to 4.5 V, V
S+
= 5 V, V
S+
= 0 V 63 58 54 54 dB Min
S–
= –0.5 V to 0.5 V 65 60 56 56 dB Min
S–
POWER-DOWN CHARACTERISTICS (THS4215 ONLY)
Enable REF+1.8 V Min
Power down REF+1 V Max
Enable REF–1 V Min
Power down REF–1.5 V Max
Power-down voltage level
REF = 0 V, or V
REF = VS+or floating
S–
Power-down quiescent current PD = Ref +1.0 V, Ref = 0 V 450 650 750 850 µA Max
Power-down quiescent current PD = Ref –1.5 V, Ref = 5 V 400 650 750 850 µA Max
Turnon-time delay(t
Turnoff-time delay (t
) 4 µs Typ
(ON)
) 3 µns Typ
(Off)
50% of final value
Input impedance 6 G Ω Typ
Output impedance f = 1 MHz 75 k Ω Typ
0 ° C to –40 ° C
70 ° C to 85 ° C
MIN/
MAX
7
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THS4211
THS4215
SLOS400D – SEPTEMBER 2002 – REVISED NOVEMBER 2004
TYPICAL CHARACTERISTICS
Table of Graphs ( ± 5 V)
FIGURE
Small-signal unity gain frequency response 1
Small-signal frequency response 2
0.1 dB gain flatness frequency response 3
Large-signal frequency response 4
Slew rate vs Output voltage 5
Harmonic distortion vs Frequency 6, 7, 8, 9
Harmonic distortion vs Output voltage swing 10, 11, 12, 13
3rd-order intermodulation distortion vs Frequency 14, 16
3rd-order output intercept point vs Frequency 15, 17
Voltage and current noise vs Frequency 18
Differential gain vs Number of loads 19
Differential phase vs Number of loads 20
Settling time 21
Quiescent current vs supply voltage 22
Output voltage vs Load resistance 23
Frequency response vs Capacitive load 24
Open-loop gain and phase vs Frequency 25
Open-loop gain vs Case temperature 26
Rejection ratios vs Frequency 27
Rejection ratios vs Case temperature 28
Common-mode rejection ratio vs Input common-mode range 29
Input offset voltage vs Case temperature 30
Input bias and offset current vs Case temperature 31
Small signal transient response 32
Large signal transient response 33
Overdrive recovery 34
Closed-loop output impedance vs Frequency 35
Power-down quiescent current vs Supply voltage 36
Power-down output impedance vs Frequency 37
Turnon and turnoff delay times 38
8
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THS4211
THS4215
SLOS400D – SEPTEMBER 2002 – REVISED NOVEMBER 2004
Table of Graphs (5 V)
FIGURE
Small-signal unity gain frequency response 39
Small-signal frequency response 40
0.1 dB gain flatness frequency response 41
Large signal frequency response 42
Slew rate vs Output voltage 43
Harmonic distortion vs Frequency 44, 45, 46, 47
Harmonic distortion vs Output voltage swing 48, 49, 50, 51
3rd-order intermodulation distortion vs Frequency 52, 54
3rd-order intercept point vs Frequency 53, 55
Voltage and current noise vs Frequency 56
Settling time 57
Quiescent current vs Supply voltage 58
Output voltage vs Load resistance 59
Frequency response vs Capacitive load 60
Open-loop gain and phase vs Frequency 61
Open-loop gain vs Case temperature 62
Rejection ratios vs Frequency 63
Rejection ratios vs Case temperature 64
Common-mode rejection ratio vs Input common-mode range 65
Input offset voltage vs Case temperature 66
Input bias and offset current vs Case temperature 67
Small signal transient response 68
Large signal transient response 69
Overdrive recovery 70
Closed-loop output impedance vs Frequency 71
Power-down quiescent current vs Supply voltage 72
Power-down output impedance vs Frequency 73
Turnon and turnoff delay times 74
9
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-4
-3
-2
-1
0
1
2
3
4
5
100 k 1 M 10 M 100 M 1 G 10 G
f - Frequency - Hz
Small Signal Gain - dB
Gain = 1
RL = 499 Ω
VO = 250 mV
VS = ±5 V
-4
-2
0
2
4
6
8
10
12
14
16
18
20
22
100 k 1 M 10 M 100 M 1 G
f - Frequency - Hz
Small Signal Gain - dB
Gain = 10
Gain = 5
Gain = 2
Gain = -1
RL = 499 Ω
Rf = 392 Ω
VO = 250 mV
VS = ±5 V
-1
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
0
0.1
Gain = 1
RL = 499 Ω
VO = 250 mV
VS = ±5 V
f - Frequency - Hz
Small Signal Gain - dB
1 M
10 M 100 M
1 G
100 k 1 M 10 M 100 M 1 G
f - Frequency - Hz
Large Signal Gain - dB
Gain = 1
RL = 499 Ω
VO = 2 V
PP
VS = ±5 V
-4
-3
-2
-1
0
1
-100
-95
-90
-85
-80
-75
-70
-65
-60
1 10 100
Harmonic Distortion - dBc
f - Frequency - MHz
Gain = 1
VO = 1 V
PP
VS = ±5 V
HD2, RL = 150 Ω
HD3, RL = 150 Ω
and RL = 499 Ω
HD2, RL = 499 Ω
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
V
O
- Output Voltage - V
SR - Slew Rate -
sµ
V/
RL = 499 Ω
Rf = 392 Ω
VS = ±5 V
0
200
400
600
800
1000
1200
1400
Fall, Gain = 1
Rise, Gain = 1
Fall, Gain =- 1
Rise, Gain = -1
-100
-95
-90
-85
-80
-75
-70
-65
-60
-55
-50
1
10
100
Harmonic Distortion - dBc
f - Frequency - MHz
Gain = 1
VO = 2 V
PP
VS = ±5 V
HD3, RL = 150 Ω
and RL = 499 Ω
HD2, RL = 150 Ω
HD2, RL = 499 Ω
HD3, RL = 150Ω,
and RL = 499 Ω
Harmonic Distortion - dBc
f - Frequency - MHz
-100
-95
-90
-85
-80
-75
-70
-65
-60
-55
-50
1 10 100
HD2, RL = 150Ω
HD2, RL = 499Ω
Gain = 2
Rf = 392 Ω
VO = 2 V
PP
VS = ±5 V
-100
-95
-90
-85
-80
-75
-70
-65
-60
-55
1 10 100
Harmonic Distortion - dBc
f - Frequency - MHz
Gain = 2
Rf = 392 Ω
VO = 1 V
PP
VS = ±5 V
HD2, RL = 499Ω
HD2, RL = 150Ω
HD3, RL = 150Ω,
and RL = 499 Ω
THS4211
THS4215
SLOS400D – SEPTEMBER 2002 – REVISED NOVEMBER 2004
TYPICAL CHARACTERISTICS ( ± 5 V Graphs)
SMALL SIGNAL UNITY GAIN SMALL SIGNAL FREQUENCY 0.1 dB GAIN FLATNESS
FREQUENCY RESPONSE RESPONSE FREQUENCY RESPONSE
Figure 1. Figure 2. Figure 3.
LARGE SIGNAL FREQUENCY vs vs
SLEW RATE HARMONIC DISTORTION
RESPONSE OUTPUT VOLTAGE FREQUENCY
Figure 4. Figure 5. Figure 6.
HARMONIC DISTORTION HARMONIC DISTORTION HARMONIC DISTORTION
vs vs vs
FREQUENCY FREQUENCY FREQUENCY
10
Figure 7. Figure 8. Figure 9.
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-100
-95
-90
-85
-80
-75
-70
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
Harmonic Distortion - dBc
VO - Output Voltage Swing - ±V
HD2, RL = 499Ω
HD3, RL = 150Ω
HD2, RL = 150Ω
HD3, RL = 499Ω
Gain = 1
f= 8 MHz
VS = ±5 V
Harmonic Distortion - dBc
VO - Output Voltage Swing - ±V
Gain = 1
f= 32 MHz
VS = ±5 V
HD2, RL = 499Ω
HD2, RL = 150Ω
HD3, RL = 150Ω
HD3, RL = 499Ω
-100
-95
-90
-85
-80
-75
-70
-65
-60
-55
-50
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
-100
-95
-90
-85
-80
-75
-70
-65
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
Harmonic Distortion - dBc
VO - Output Voltage Swing - ±V
Gain = 2
Rf = 249 Ω
f = 8 MHz
VS = ±5 V
HD3, RL = 150Ω
HD2, RL = 499Ω
HD3, RL = 499Ω
HD2, RL = 150Ω
-100
-95
-90
-85
-80
-75
-70
-65
-60
-55
-50
-45
-40
0 1 2 3 4 5
Harmonic Distortion - dBc
VO - Output Voltage Swing - ±V
Gain = 2
Rf = 249 Ω
f = 32 MHz
VS = ±5 V
HD3, RL = 150Ω
HD2, RL = 499Ω
HD2, RL = 150Ω
HD3, RL = 499Ω
0.5 1.5 2.5 3.5 4.5
30
35
40
45
50
55
60
0 20 40 60 80 100
VO = 2 V
PP
VO = 1 V
PP
Gain = 1
RL = 150 Ω
VS =±5 V
200 kHz Tone Spacing
Third-Order Output Intersept Point - dBm
f - Frequency - MHz
-100
-95
-90
-85
-80
-75
-70
-65
-60
-55
-50
-45
10 100
Third-Order Intermodulation Distortion - dBc
f - Frequency - MHz
VO = 2 V
PP
VO = 1 V
PP
Gain = 1
RL = 150 Ω
VS =±5 V
200 kHz Tone Spacing
1
10
100
1 k 10 k 100 k 1 M 10 M 100 M
1
10
100
V
n
I
n
f - Frequency - Hz
- Voltage Noise - nV/ Hz
V
n
- Current Noise - pA/ Hz
I
n
Third-Order Intermodulation Distortion - dBc
f - Frequency - MHz
Gain = 2
RL = 150 Ω
VS =±5 V
200 kHz Tone Spacing
VO = 2 V
PP
VO = 1 V
PP
-100
-95
-90
-85
-80
-75
-70
-65
-60
-55
-50
-45
-40
10 100
20
25
30
35
40
45
50
55
60
0 20 40 60 80 100
Third-Order Output Intersept Point - dBm
f - Frequency - MHz
Gain = 2
RL = 150 Ω
VS = ±5 V
200 kHz Tone Spacing
VO = 1 V
PP
VO = 2 V
PP
TYPICAL CHARACTERISTICS ( ± 5 V Graphs) (continued)
THS4211
THS4215
SLOS400D – SEPTEMBER 2002 – REVISED NOVEMBER 2004
HARMONIC DISTORTION HARMONIC DISTORTION HARMONIC DISTORTION
vs vs vs
OUTPUT VOLTAGE SWING OUTPUT VOLTAGE SWING OUTPUT VOLTAGE SWING
Figure 10. Figure 11. Figure 12.
THIRD ORDER INTERMODULATION THIRD ORDER OUTPUT
HARMONIC DISTORTION DISTORTION INTERCEPT POINT
vs vs vs
OUTPUT VOLTAGE SWING FREQUENCY FREQUENCY
THIRD ORDER INTERMODULATION THIRD ORDER OUTPUT
Figure 13. Figure 14. Figure 15.
DISTORTION INTERCEPT POINT VOLTAGE AND CURRENT NOISE
vs vs vs
FREQUENCY FREQUENCY FREQUENCY
Figure 16. Figure 17. Figure 18.
11
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0
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0.18
0.20
0 1 2 3 4 5 6 7 8
Number of Loads - 150 Ω
Differential Phase -
Gain = 2
Rf = 392 Ω
VS = ±5 V
40 IRE - NTSC and Pal
Worst Case ±100 IRE Ramp
NTSC
PAL
°
Number of Loads - 150 Ω
Differential Gain - %
NTSC
PAL
0
0.005
0.010
0.015
0.020
0.025
0.030
0 1 2 3 4 5 6 7 8
Gain = 2
Rf = 392 Ω
VS = ±5 V
40 IRE - NTSC and Pal
Worst Case ±100 IRE Ramp
-3
-2
-1
0
1
2
3
0 5 10 15 20 25
t - Time - ns
- Output Voltage - VV
O
Rising Edge
Falling Edge
Gain = -1
RL = 499 Ω
Rf = 392 Ω
f= 1 MHz
VS = ±5 V
-5
-4
-3
-2
-1
0
1
2
3
4
5
10 100 1000
R
L
- Load Resistance - Ω
- Output Voltage - VV
O
TA = -40 to 85°C
10
12
14
16
18
20
22
2.5 3 3.5 4 4.5 5
TA = -40°C
V
S
- Supply Voltage - ±V
Quiescent Current - mA
TA = 85°C
TA = 25°C
-3
-2.5
-2
-1.5
-1
-0.5
0
0.5
1
100 k 1 M 10 M 100 M 1 G
Capacitive Load - Hz
Normalized Gain - dB
R
(ISO)
= 15 Ω
CL = 50 pF
VS =±5 V
R
(ISO)
= 10 Ω
CL = 100 pF
R
(ISO)
= 25 Ω
CL = 10 pF
60
65
70
75
80
85
90
2.5 3 3.5 4 4.5 5
Open-Loop Gain - dB
Case Temperature - °C
TA = -40°C
TA = 85°C
TA = 25°C
0
10
20
30
40
50
60
70
100 k 1 M 10 M 100 M 1 G
CMRR
VS = ±5 V
Rejection Ratios - dB
f - Frequency - Hz
PSRR+
PSRR-
80
-10
0
10
20
30
40
50
60
70
10 k 100 k 1 M 10 M 100 M 1 G
0
20
40
60
80
100
120
160
180
Open-Loop Gain - dB
f - Frequency - Hz
VS = ±5 V
Phase - °
140
THS4211
THS4215
SLOS400D – SEPTEMBER 2002 – REVISED NOVEMBER 2004
TYPICAL CHARACTERISTICS ( ± 5 V Graphs) (continued)
DIFFERENTIAL GAIN DIFFERENTIAL PHASE
vs vs
NUMBER OF LOADS NUMBER OF LOADS SETTLING TIME
Figure 19. Figure 20. Figure 21.
QUIESCENT CURRENT OUTPUT VOLTAGE FREQUENCY RESPONSE
vs vs vs
SUPPLY VOLTAGE LOAD RESISTANCE CAPACITIVE LOAD
OPEN-LOOP GAIN AND PHASE OPEN-LOOP GAIN REJECTION RATIOS
12
Figure 22. Figure 23. Figure 24.
vs vs vs
FREQUENCY CASE TEMPERATURE FREQUENCY
Figure 25. Figure 26. Figure 27.
www.ti.com
0
10
20
30
40
50
60
70
80
-40-30-20-10 0 10 20 30 40 50 60 70 80 90
Rejection Ratios - dB
Case Temperature - °C
VS = ±5 V
PSRR-
CMMR
PSRR+
0
5
10
15
20
25
30
35
40
45
50
55
60
-4.5 -3 -1.5 0 1.5 3 4.5
Input Common-Mode Range - V
CMRR - Common-Mode Rejection Ratio - dB
VS = ±5 V
TA = 25°C
0
1
2
3
4
5
6
7
8
9
-40-30-20 -10 0 10 20 30 40 50 60 70 80 90
VS = 5 V
VS = ±5 V
T
C
- Case Temperature - °C
- Input Offset Voltage - mV
V
OS
-0.12
-0.1
-0.08
-0.06
-0.04
-0.02
0.02
0.04
0.06
0.08
0.1
0.12
-1 0 1 2 3 4 5 6 7 8 9 10
t - Time - ns
- Output Voltage - VV
O
Gain = -1
RL = 499 Ω
Rf =392 Ω
tr/tf = 300 ps
VS = ±5 V
0
-1.5
-1
-0.5
0
0.5
1
1.5
-2 0 2 4 6 8 10 12 14 16 18 20
t - Time - ns
- Output Voltage - VV
O
Gain = -1
RL = 499 Ω
Rf = 392 Ω
tr/tf = 300 ps
VS = ±5 V
5.6
5.7
5.8
5.9
6
6.1
6.2
6.3
6.4
6.5
6.6
-40-30-20-10 0 10 20 30 40 50 60 70 80 90
0.2
0.25
0.3
0.35
0.4
0.45
0.5
0.55
0.6
0.65
0.7
- Input Bias Current -
TC - Case Temperature - °C
VS = ±5 V
- Input Offset Current -
I
IB-
I
IB
Aµ
I
OS
Aµ
I
IB+
I
OS
0
-6
-5
-4
-3
-2
-1
0
1
2
3
4
5
6
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
-3
-2.5
-2
-1.5
-1
-0.5
0.5
1
1.5
2
2.5
3
t - Time - µs
Single-Ended Output Voltage - V
- Input Voltage - VV
I
VS = ±5 V
0.01
0.1
1
10
100
1 k
10 k
100 k
100 k 1 M 10 M 100 M 1 G
f - Frequency - Hz
Closed-Loop Output Impedance - Ω
RL = 499 Ω,
RF = 392 Ω,
PIN = -4 dBm
VS = ±5 V
0
100
200
300
400
500
600
700
800
2.5 3 3.5 4 4.5 5
V
S
- Supply Voltage - ±V
Power-Down Quiescent Current -
TA = 85°C
TA = 25°C
Aµ
TA = -40°C
TYPICAL CHARACTERISTICS ( ± 5 V Graphs) (continued)
THS4211
THS4215
SLOS400D – SEPTEMBER 2002 – REVISED NOVEMBER 2004
REJECTION RATIOS COMMON-MODE REJECTION RATIO INPUT OFFSET VOLTAGE
vs vs vs
CASE TEMPERATURE INPUT COMMON-MODE RANGE CASE TEMPERATURE
Figure 28. Figure 29. Figure 30.
INPUT BIAS AND OFFSET
CURRENT
vs SMALL SIGNAL TRANSIENT LARGE SIGNAL TRANSIENT
CASE TEMPERATURE RESPONSE RESPONSE
OVERDRIVE RECOVERY FREQUENCY SUPPLY VOLTAGE
Figure 31. Figure 32. Figure 33.
CLOSED-LOOP OUTPUT POWER-DOWN QUIESCENT
IMPEDANCE CURRENT
vs vs
Figure 34. Figure 35. Figure 36.
13
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