Texas Instruments THS4022IDR, THS4022IDGN, THS4022IDGNR, THS4022ID, THS4022EVM Datasheet

THS4021, THS4022

350-MHz LOW-NOISE HIGH-SPEED AMPLIFIERS

SLOS265B – SEPTEMBER 1999 – REVISED FEBRUARY 2000

1

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

D

Ultra-Low 1.5 nV/√Hz Voltage Noise

D

High Speed
– 350 MHz Bandwidth (G = 10, –3 dB)
– 470 V/µs Slew Rate
– 40 ns Settling Time (0.1%)

D

Stable at a Gain of 10 (–9) or Greater

D

High Output Drive, IO = 100 mA (typ)

D

Excellent Video Performance
– 17 MHz Bandwidth (0.1 dB, G = 10)
– 0.02% Differential Gain
– 0.08° Differential Phase

D

Very Low Distortion
– THD = –68 dBc (f = 1 MHz, RL = 150 Ω)

D

Wide Range of Power Supplies
– VCC = ±5 V to ±15 V

D

Available in Standard SOIC or MSOP
PowerPAD Package

D

Evaluation Module Available

description

The THS4021 and THS4022 are ultra-low voltage
noise, high-speed voltage feedback amplifiers
that are ideal for applications requiring low voltage
noise, including communication and imaging. The
signal-amplifier THS4021 and the dual-amplifier
THS4022 offer very good ac performance with
350-MHz bandwidth, 470-V/µs slew rate, and
40-ns settling time (0.1%). The THS4021 and
THS4022 are stable at gains of 10 (–9) or greater.
These amplifiers have a high drive capability of
100 mA and draw only 7.8-mA supply current per
channel. With total harmonic distortion (THD) of
–68 dBc at f = 1 MHz, the THS4021 and THS4022
are ideally suited for applications requiring low
distortion.

RELATED DEVICES

DEVICE DESCRIPTION

THS4011/2
THS4031/2
THS4061/2

290-MHz Low Distortion High-Speed Amplifiers
100-MHz Low Noise High-Speed Amplifiers
180-MHz High-Speed Amplifiers

PowerPAD is a trademark of Texas Instruments Incorporated.

Copyright  2000, Texas Instruments Incorporated

PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

THS4022

D AND DGN PACKAGE

(TOP VIEW)

1
2
3
4

8
7
6
5

1OUT

1IN–
1IN+

–V

CC

V

CC+

2OUT
2IN–
2IN+

1
2
3
4

8
7
6
5

NULL

IN–
IN+

V

CC–

NULL
V

CC+

OUT
NC

THS4021

D AND DGN PACKAGE

(TOP VIEW)

NC – No internal connection

Cross Section View Showing

PowerPAD Option (DGN)

Figure 1

f – Frequency – Hz

VOLTAGE & CURRENT NOISE

vs

FREQUENCY

VCC = ± 15 V and ± 5 V
TA = 25°C

100

1

10

nV/

Hz

– Voltage Noise –V

n

pA/

Hz

– Current Noise –I

n

10010 1 k 10 k 100 k

V

n

I

n

CAUTION: The THS4021 and THS4022 provide ESD protection circuitry. However , permanent damage can still occur if this device
is subjected to high-energy electrostatic discharges. Proper ESD precautions are recommended to avoid any performance
degradation or loss of functionality.

THS4021, THS4022
350-MHz LOW-NOISE HIGH-SPEED AMPLIFIERS

SLOS265B – SEPTEMBER 1999 – REVISED FEBRUARY 2000

2

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

AVAILABLE OPTIONS

PACKAGED DEVICES

T

A

NUMBER OF

CHANNELS

PLASTIC

SMALL OUTLINE

†

(D)

PLASTIC

MSOP

†

(DGN)

MSOP

SYMBOL

EVALUATION

MODULE

°

°

1 THS4021CD THS4021CDGN ACK THS4021EVM

0°C to 70°C

2 THS4022CD THS4022CDGN ACL THS4022EVM

°

°

1 THS4021ID THS4021IDGN ACA —

–

40°C to 85°C

2 THS4022ID THS4022IDGN ACB —

†

The D and DGN packages are available taped and reeled. Add an R suffix to the device type (i.e., THS4021CDGN).

functional block diagram

OUT

8

6

1

IN–

IN+

2

3

Null

Figure 2. THS4021 – Single Channel

1OUT

1IN–

1IN+

V

CC

2OUT

2IN–

2IN+

–V

CC

Figure 3. THS4022 – Dual Channel

THS4021, THS4022

350-MHz LOW-NOISE HIGH-SPEED AMPLIFIERS

SLOS265B – SEPTEMBER 1999 – REVISED FEBRUARY 2000

3

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

absolute maximum ratings over operating free-air temperature (unless otherwise noted)

†

Supply voltage, VCC ±16.5 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Input voltage, VI ±V

CC

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Output current, IO 150 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Differential input voltage, V

IO

±4 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Continuous total power dissipation See Dissipation Rating Table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Maximum junction temperature, TJ 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating free-air temperature, TA: C-suffix 0°C to 70°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

I-suffix –40°C to 85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage temperature, T

stg

–65°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 300°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

†

Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

DISSIPATION RATING TABLE

θ

θ

T

= 25°C

PACKAGE

JA

(°C/W)

JC

(°C/W)

A

POWER RATING

D 167

‡

38.3 740 mW

DGN

§

58.4 4.7 2.14 W

‡

This data was taken using the JEDEC standard Low-K test PCB. For the JEDEC Proposed
High-K test PCB, the θJA is 95°C/W with a power rating at TA = 25°C of 1.32 W.

§

This data was taken using 2 oz. trace and copper pad that is soldered directly to a 3 in. × 3 in.
PC. For further information, refer to

Application Information

section of this data sheet.

recommended operating conditions

MIN NOM MAX UNIT

pp

Dual supply ±4.5 ±16

Suppl

y v

oltage, V

CC+

and V

CC–

Single supply 9 32

V

p

p

C-suffix 0 70

°

Operating free-air temperature, T

A

I-suffix –40 85

°C

THS4021, THS4022
350-MHz LOW-NOISE HIGH-SPEED AMPLIFIERS

SLOS265B – SEPTEMBER 1999 – REVISED FEBRUARY 2000

4

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

electrical characteristics at TA = 25°C, VCC = ±15 V, RL = 150 Ω (unless otherwise noted)

dynamic performance

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

VCC = ±15 V

350

VCC = ±5 V

Gain

=

10

280

MH

z

Small-signal bandwidth (–3 dB)

VCC = ±15 V

80

VCC = ±5 V

Gain

=

20

70

MHzBW

VCC = ±15 V

17

Bandwidth for 0.1 dB flatness

VCC = ±5 V

Gain

=

10

17

MH

z

p

V

O(pp)

= 20 V, VCC = ±15 V 3.7

Full power bandwidth

†

V

O(pp)

= 5 V, VCC = ±5 V 11.8

MHz

VCC = ±15 V , 10-V step,

470

SR

Slew rate

‡

VCC = ±5 V, 5-V step

Gain

=

10

370

V/µs

VCC = ±15 V , 5-V step

40

Settling time to 0.1%

VCC = ±5 V, 2-V step

Gain

= –

10

50

ns

t

s

VCC = ±15 V , 5-V step

145

Settling time to 0.01%

VCC = ±5 V, 2-V step

Gain

= –

10

150

ns

†

Slew rate is measured from an output level range of 25% to 75%.

‡

Full power bandwidth = slew rate / 2π V

O(Peak)

.

noise/distortion performance

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

RL = 150 Ω –68

V

pp

= 2 V,

V

CC

=

±15 V

RL = 1 kΩ –77

THD

Total harmonic distortion

O( )

,

f = 1 MHz, Gain = 2

RL = 150 Ω –69

dBc

V

CC

= ±5

V

RL = 1 kΩ –78

V

n

Input voltage noise VCC = ±5 V or ±15 V, f = 10 kHz 1.5 nV/√Hz

I

n

Input current noise VCC = ±5 V or ±15 V, f = 10 kHz 2 pA/√Hz

Gain = 2, NTSC,

VCC = ±15 V

Differential gain error

,

40 IRE modulation,,±100 IRE ramp

VCC = ±5 V

0.02%

p

Gain = 2, NTSC,

VCC = ±15 V 0.08°

Differential phase error

,

40 IRE modulation,,±100 IRE ramp

VCC = ±5 V

0.06°

X

T

Channel-to-channel crosstalk
(THS4022 only)

VCC = ±5 V or ±15 V, f = 1 MHz –60 dB

THS4021, THS4022

350-MHz LOW-NOISE HIGH-SPEED AMPLIFIERS

SLOS265B – SEPTEMBER 1999 – REVISED FEBRUARY 2000

5

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

electrical characteristics at TA = 25°C, VCC = ±15 V , RL = 150 Ω (unless otherwise noted) (continued)

dc performance

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

V

= ±15 V , V

= ±10 V ,

TA = 25°C 40 60

p

p

CC

,

RL = 1 kΩ

O

,

TA = full range 35

V/mV

Open loop gain

V

= ±5 V, V

= ±2.5 V ,

TA = 25°C 20 35

CC

,

RL = 250 Ω

O

,

TA = full range 15

V/mV

p

TA = 25°C 0.5 2

VOSInput offset voltage

TA = full range 3

mV

Offset voltage drift TA = full range 15 µV/°C

p

VCC = ±5 V or ±15 V

TA = 25°C 3 6

IIBInput bias current

TA = full range 6

µ

A

p

TA = 25°C 30 250

IOSInput offset current

TA = full range 400

nA

Offset current drift TA = full range 0.3 nA/°C

input characteristics

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

p

VCC = ±15 V ±13.8 ±14.3

V

ICR

Common-mode input voltage range

VCC = ±5 V ±3.8 ±4.3

V

CMRR Common mode rejection ratio VCC = ±15 V , V

ICR

= ±12 V , TA = full range 74 95 dB

r

i

Input resistance 1 MΩ

C

i

Input capacitance 1.5 pF

output characteristics

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

VCC = ±15 V RL = 250 Ω ±12 ±12.5

p

VCC = ±5 V RL = 150 Ω ±3 ±3.3

V

VOOutput voltage swing

VCC = ±15 V

±13 ±13.5

VCC = ±5 V

R

L

= 1

kΩ

±3.4 ±3.8

V

VCC = ±15 V

80 100

I

O

Output

curren

t

VCC = ±5 V

R

L

= 20

Ω

50 75

mA

I

SC

Short-circuit current

†

VCC = ±15 V 150 mA

R

O

Output resistance

†

Open loop 13 Ω

†

Observe power dissipation ratings to keep the junction temperature below the absolute maximum rating when the output is heavily loaded or
shorted. See the absolute maximum ratings section of this data sheet for more information.

power supply

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

pp

p

Dual supply ±4.5 ±16.5

VCCSuppl

y v

oltage operating range

Single supply 9 33

V

TA = 25°C 7.8 10

pp

p

p

V

CC

=

±15 V

TA = full range 11

ICCSupply current (per amplifier)

TA = 25°C 6.7 9

mA

V

CC

=

±5 V

TA = full range 10.5

PSRR Power supply rejection ratio VCC = ±5 V or ±15 V TA = full range 80 95 dB

THS4021, THS4022
350-MHz LOW-NOISE HIGH-SPEED AMPLIFIERS

SLOS265B – SEPTEMBER 1999 – REVISED FEBRUARY 2000

6

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS

Figure 4

10

0
–10
–20
–30
–40
–50
–60
–70
–80

1 M 10 M 100 M 1 G

f – Frequency – Hz

CROSSTALK

vs

FREQUENCY

Crosstalk – dB

VCC = ± 15 V
Gain = 10
RF = 220 Ω
RL = 150 Ω

Figure 5

OPEN LOOP GAIN AND

PHASE RESPONSE

vs

FREQUENCY

f – Frequency – Hz

100 M10 M100 k 1 M

–60

–90

0

30

–180

–120

Open Loop Gain – dB

Phase

10 k1 k 1 G

–150

–30

VCC = ± 5 V & ±15 V

Gain

Phase

–20

0

20

40

60

80

100

120

Figure 6

–40

–50

–60

–70

–80

–90

–100

VCC = ± 15 V
Gain = 10
V

O(PP)

= 2 V

100 k 1 M 10 M

TOTAL HARMONIC DISTORTION

vs

FREQUENCY

f – Frequency – Hz

THD – Total Harmonic Distortion – dBc

RL = 150 Ω

RL = 1 kΩ

Figure 7

–10

0

–30

–50

–70

–90

–110

5 101520

DISTORTION

vs

OUTPUT VOLTAGE

VO – Output Voltage – V

Distortion – dBc

VCC = ± 15 V
RL = 1 kΩ
G = 10
f = 1 MHz

2nd Harmonic

3rd Harmonic

Figure 8

–10

–30

–50

–70

–90

–110

0 5 10 15 20

DISTORTION

vs

OUTPUT VOLTAGE

Distortion – dBc

VO – Output Voltage – V

VCC = ± 15 V
RL = 150 Ω
G = 10
f = 1 MHz

2nd Harmonic

3rd Harmonic

Figure 9

–50

–60

–70

–80

–90

–100

100 k 1 M 10 M

DISTORTION

vs

FREQUENCY

f – Frequency – Hz

Distortion – dBc

2nd Harmonic

3rd Harmonic

VCC = ± 15 V
RL = 1 kΩ
G = 10
V

O(PP)

= 2 V

Figure 10

–50

–60

–70

–80

–90

–100

100 k 1 M 10 M

VCC = ± 5 V
RL = 1 kΩ
G = 10
V

O(PP)

= 2 V

2nd Harmonic

3rd Harmonic

DISTORTION

vs

FREQUENCY

f – Frequency – Hz

Distortion – dBc

Figure 11

VCC = ± 15 V
RL = 150 Ω
G = 10
V

O(PP)

= 2 V

2nd Harmonic

3rd Harmonic

–50

–60

–70

–80

–90

–100

100 k 1 M 10 M

DISTORTION

vs

FREQUENCY

f – Frequency – Hz

Distortion – dBc

THS4021, THS4022

350-MHz LOW-NOISE HIGH-SPEED AMPLIFIERS

SLOS265B – SEPTEMBER 1999 – REVISED FEBRUARY 2000

7

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS

Figure 12

100 k 1 M 10 M

DISTORTION

vs

FREQUENCY

f – Frequency – Hz

Distortion – dBc

VCC = ± 5 V
RL = 150 Ω
G = 10
V

O(PP)

= 2 V

2nd Harmonic

3rd Harmonic

–40

–50

–60

–70

–80

–90

–100

Figure 13

25

20

15

10

10 k 100 k 1 M 10 M

100 M

1 G

VCC = ± 15 V
Gain = 10
RL = 150 Ω
V

O(PP)

= 400 mV

RF = 150 Ω

RF = 220 Ω

OUTPUT AMPLITUDE

vs

FREQUENCY

f – Frequency – Hz

Output Amplitude – dB

Figure 14

25

20

15

10

10 k 100 k 1 M 10 M

100 M

1 G

OUTPUT AMPLITUDE

vs

FREQUENCY

f – Frequency – Hz

Output Amplitude – dB

VCC = ± 5 V
Gain = 10
RL = 150 Ω
V

O(PP)

= 400 mV

RF = 220 Ω

RF = 150 Ω

Figure 15

OUTPUT AMPLITUDE

vs

FREQUENCY

Output Amplitude – dB

RF = 6.2 kΩ

RF = 220 Ω

f – Frequency – Hz

10

15

20

25

30

1 10 100 1000 10000

1 G10 M100 k 1 M 100 M

VCC = ±15 V
Gain = 20
RL = 150 Ω
V

O(PP)

= 400 mV

RF = 1 kΩ

OUTPUT AMPLITUDE

vs

FREQUENCY

f – Frequency – Hz

Output Amplitude – dB

Figure 16

10

15

20

25

30

1 10 100 1000 10000

1 G10 M100 k 1 M 100 M

RF = 6.2 kΩ

RF = 220 Ω

VCC = ±5 V
Gain = 20
RL = 150 Ω
V

O(PP)

= 400 mV

RF = 1 kΩ

Figure 17

–0.60

–0.40

–0.20

–0.00

0.20

0.40

0.60

0.80

0 50 100 150 200 250 300 350 400

1-V STEP RESPONSE

t – Time – ns

– Output Voltage – V

V

O

VCC = ± 5 V
Gain = 10
RF = 220 Ω
RL = 150 Ω

0.8

0.6

0.4

0.2

0

–0.2

–0.4

–0.6

Figure 18

–3

–2

–1

0

1

2

3

0 50 100 150 200 250 300 350 400

5-V STEP RESPONSE

t – Time – ns

– Output Voltage – V

V

O

VCC = ± 5 V
Gain = –10
RF = 220 Ω
RL = 150 Ω

Figure 19

–0.6

–0.40

–0.20

–0.00

0.20

0.40

0.60

0.80

0 50 100 150 200 250 300 350 400

1-V STEP RESPONSE

t – Time – ns

– Output Voltage – V
V

O

VCC = ± 15 V
Gain = 10
RF = 220 Ω
RL = 150 Ω

0.8

0.6

0.4

0.2

0

–0.2

–0.4

–0.6

Figure 20

–6

–4

–2

0

2

4

6

0 100 200 300 400 500

10-V STEP RESPONSE

t – Time – ns

– Output Voltage – V

V

O

VCC = ± 15 V
Gain = 10
RF = 220 Ω
RL = 150